CN103795243A - Double-tube series-connection booster circuit - Google Patents
Double-tube series-connection booster circuit Download PDFInfo
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- CN103795243A CN103795243A CN201410023971.8A CN201410023971A CN103795243A CN 103795243 A CN103795243 A CN 103795243A CN 201410023971 A CN201410023971 A CN 201410023971A CN 103795243 A CN103795243 A CN 103795243A
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Abstract
The invention discloses a double-tube series-connection booster circuit which comprises an MOS tube Q1, a diode D1, a resistor R1, an MOS tube Q2, a voltage-regulator diode D2 and a diode D3. The source electrode of the MOS tube Q1 is connected to one end of the diode D1, the other end of the diode D1 is connected to one end of the resistor R1, the node after the drain electrode of the MOS tube Q1 is connected with the source electrode of the MOS tube Q2 is connected to one end of the voltage-regulator diode D2, the other end of the voltage-regulator diode D2 is connected to the grid electrode of the MOS tube Q1, one end of the diode D3 and the other end of the resistor R1, and the other end of the diode D3 is connected to the drain electrode of the MOS tube Q2. According to the double-tube series-connection booster circuit, the two MOS tubes are connected in series, the voltage withstand value of each MOS tube is lowered, when input voltages are AC90V-AC750V, normal MOS tubes with the voltage withstand value of 800V can be selected and used, cost is lowered greatly, and efficiency is improved.
Description
Technical field
The present invention relates to a kind of booster circuit, relate in particular to a kind of double-tube series booster circuit.
Background technology
Traditional booster circuit as shown in Figure 1, because metal-oxide-semiconductor (mos field effect transistor) withstand voltage outline is higher than output voltage, in the time that the input voltage of mine system is AC90V-AC750V, metal-oxide-semiconductor need to be selected the withstand voltage unconventional metal-oxide-semiconductor of 1500V, not only cost is high, and efficiency is low.
Summary of the invention
The object of the invention is to, by a kind of double-tube series booster circuit, solve the problem that above background technology part is mentioned.
For reaching this object, the present invention by the following technical solutions:
A kind of double-tube series booster circuit, comprises metal-oxide-semiconductor Q1, diode D1, resistance R 1, metal-oxide-semiconductor Q2, voltage stabilizing didoe D2 and diode D3; Wherein, the source electrode of described metal-oxide-semiconductor Q1 connects one end of diode D1, one end of the other end contact resistance R1 of diode D1, node after the drain electrode of metal-oxide-semiconductor Q1 is connected with the source electrode of metal-oxide-semiconductor Q2 connects one end of voltage stabilizing didoe D2, the other end of voltage stabilizing didoe D2 connects the grid of metal-oxide-semiconductor Q1, one end of diode D3, the other end of resistance R 1, and the other end of diode D3 connects the drain electrode of metal-oxide-semiconductor Q2.
Especially, described diode D3 selects TVS pipe.
Double-tube series booster circuit provided by the invention is connected in series two metal-oxide-semiconductors, reduced the withstand voltage of each metal-oxide-semiconductor, in the time that input voltage is AC90V-AC750V, can select withstand voltage is the conventional metal-oxide-semiconductor of 800V, not only greatly reduce cost, and promoted efficiency.
Accompanying drawing explanation
Fig. 1 is traditional boost circuit structure figure;
The double-tube series boost circuit structure figure that Fig. 2 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, in accompanying drawing, only show part related to the present invention but not full content.
Please refer to shown in Fig. 2 the double-tube series boost circuit structure figure that Fig. 2 provides for the embodiment of the present invention.
In the present embodiment, double-tube series booster circuit specifically comprises: metal-oxide-semiconductor Q1, diode D1, resistance R 1, metal-oxide-semiconductor Q2, voltage stabilizing didoe D2, diode D3, capacitor C 1, inductance L 1, capacitor C 2, capacitor C 3 and capacitor C 4.
The source electrode of described metal-oxide-semiconductor Q1 connects one end of diode D1, one end of the other end contact resistance R1 of diode D1, node after the drain electrode of metal-oxide-semiconductor Q1 is connected with the source electrode of metal-oxide-semiconductor Q2 connects one end of voltage stabilizing didoe D2, the other end of voltage stabilizing didoe D2 connects the grid of metal-oxide-semiconductor Q1, one end of diode D3, the other end of resistance R 1, and the other end of diode D3 connects the drain electrode of metal-oxide-semiconductor Q2.After described capacitor C 1 is connected in series with inductance L 1, one end connects the source electrode of metal-oxide-semiconductor Q1, and the other end connects the drain electrode of metal-oxide-semiconductor Q2.After described capacitor C 2, capacitor C 3 and capacitor C 4 are connected in series, one end connects the drain electrode of metal-oxide-semiconductor Q2, and the other end connects the node after diode D1 is connected with resistance R 1.
In the present embodiment, described diode D3 can be both single TVS pipe (Transient Suppression Diode), can be also multiple TVS pipes that are connected in series.Because metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 are connected in series, reduce the withstand voltage of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2, so in the time that input voltage is AC90V-AC750V, it is the conventional metal-oxide-semiconductor of 800V that metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 can select withstand voltage, not only greatly reduce product cost, and promoted efficiency.
Below the operation principle of double-tube series booster circuit in the present embodiment is briefly described.
In the time of metal-oxide-semiconductor Q2 conducting, metal-oxide-semiconductor Q1 produces 15V left and right voltage turn-on by resistance R 1 and diode D2 at GS end; In the time that metal-oxide-semiconductor Q2 ends, when DS voltage reaches diode D3 terminal voltage, the GS voltage of metal-oxide-semiconductor Q1 reduces to 0, metal-oxide-semiconductor Q1 cut-off.When metal-oxide-semiconductor Q2 cut-off, voltage is no more than the voltage of diode D3, metal-oxide-semiconductor Q1 cut-ff voltage equals output voltage and deducts the voltage of diode D3, if the total clamp voltage of diode D3 is 750V, output voltage is not higher than 1500V, and can select withstand voltage is the conventional metal-oxide-semiconductor of 800V.
Technical scheme of the present invention is connected in series two metal-oxide-semiconductors, has reduced the withstand voltage of each metal-oxide-semiconductor, and in the time that input voltage is AC90V-AC750V, can select withstand voltage is the conventional metal-oxide-semiconductor of 800V, not only greatly reduces cost, and has promoted efficiency.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious variations, readjust and substitute and can not depart from protection scope of the present invention.Therefore, although the present invention is described in further detail by above embodiment, the present invention is not limited only to above embodiment, in the situation that not departing from the present invention's design, can also comprise more other equivalent embodiment, and scope of the present invention is determined by appended claim scope.
Claims (2)
1. a double-tube series booster circuit, is characterized in that, comprises metal-oxide-semiconductor Q1, diode D1, resistance R 1, metal-oxide-semiconductor Q2, voltage stabilizing didoe D2 and diode D3; Wherein, the source electrode of described metal-oxide-semiconductor Q1 connects one end of diode D1, one end of the other end contact resistance R1 of diode D1, node after the drain electrode of metal-oxide-semiconductor Q1 is connected with the source electrode of metal-oxide-semiconductor Q2 connects one end of voltage stabilizing didoe D2, the other end of voltage stabilizing didoe D2 connects the grid of metal-oxide-semiconductor Q1, one end of diode D3, the other end of resistance R 1, and the other end of diode D3 connects the drain electrode of metal-oxide-semiconductor Q2.
2. double-tube series booster circuit according to claim 1, is characterized in that, described diode D3 selects TVS pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410023971.8A CN103795243A (en) | 2014-01-17 | 2014-01-17 | Double-tube series-connection booster circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410023971.8A CN103795243A (en) | 2014-01-17 | 2014-01-17 | Double-tube series-connection booster circuit |
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| CN103795243A true CN103795243A (en) | 2014-05-14 |
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| CN201410023971.8A Pending CN103795243A (en) | 2014-01-17 | 2014-01-17 | Double-tube series-connection booster circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258905A (en) * | 2018-02-12 | 2018-07-06 | 广州金升阳科技有限公司 | A kind of booster circuit and its control method |
| CN108364613A (en) * | 2018-02-07 | 2018-08-03 | 青岛海信电器股份有限公司 | LED backlight drive circuit, LED backlight, television terminal |
| CN109639141A (en) * | 2019-01-30 | 2019-04-16 | 上能电气股份有限公司 | A kind of booster circuit of double-tube series |
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| CN201440643U (en) * | 2009-05-12 | 2010-04-21 | 深圳长城开发科技股份有限公司 | Electronic kilowatt-hour meter and serial switch power supply thereof |
| CN201966801U (en) * | 2011-02-23 | 2011-09-07 | 英飞特电子（杭州）有限公司 | Voltage resistance circuit |
| CN202034896U (en) * | 2011-04-18 | 2011-11-09 | 英飞特电子（杭州）有限公司 | Switch device circuit |
| CN102315758A (en) * | 2010-07-07 | 2012-01-11 | 英飞特电子（杭州）有限公司 | Circuit for improving voltage resistance of device |
| CN102761264A (en) * | 2011-04-29 | 2012-10-31 | 京东方科技集团股份有限公司 | Boost circuit, backlight drive device and liquid crystal display |
| CN203734533U (en) * | 2014-01-17 | 2014-07-23 | 无锡市金赛德电子有限公司 | Boost circuit with double MOS transistors in serial connection |
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2014
- 2014-01-17 CN CN201410023971.8A patent/CN103795243A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201440643U (en) * | 2009-05-12 | 2010-04-21 | 深圳长城开发科技股份有限公司 | Electronic kilowatt-hour meter and serial switch power supply thereof |
| CN102315758A (en) * | 2010-07-07 | 2012-01-11 | 英飞特电子（杭州）有限公司 | Circuit for improving voltage resistance of device |
| CN201966801U (en) * | 2011-02-23 | 2011-09-07 | 英飞特电子（杭州）有限公司 | Voltage resistance circuit |
| CN202034896U (en) * | 2011-04-18 | 2011-11-09 | 英飞特电子（杭州）有限公司 | Switch device circuit |
| CN102761264A (en) * | 2011-04-29 | 2012-10-31 | 京东方科技集团股份有限公司 | Boost circuit, backlight drive device and liquid crystal display |
| CN203734533U (en) * | 2014-01-17 | 2014-07-23 | 无锡市金赛德电子有限公司 | Boost circuit with double MOS transistors in serial connection |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108364613A (en) * | 2018-02-07 | 2018-08-03 | 青岛海信电器股份有限公司 | LED backlight drive circuit, LED backlight, television terminal |
| CN108364613B (en) * | 2018-02-07 | 2020-03-06 | 青岛海信电器股份有限公司 | LED backlight drive circuit, LED backlight lamp and television terminal |
| CN108258905A (en) * | 2018-02-12 | 2018-07-06 | 广州金升阳科技有限公司 | A kind of booster circuit and its control method |
| CN108258905B (en) * | 2018-02-12 | 2024-04-12 | 广州金升阳科技有限公司 | Boost circuit and control method thereof |
| CN109639141A (en) * | 2019-01-30 | 2019-04-16 | 上能电气股份有限公司 | A kind of booster circuit of double-tube series |
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Application publication date: 20140514 |