CN108258905B - Boost circuit and control method thereof - Google Patents
Boost circuit and control method thereof Download PDFInfo
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- CN108258905B CN108258905B CN201810143883.XA CN201810143883A CN108258905B CN 108258905 B CN108258905 B CN 108258905B CN 201810143883 A CN201810143883 A CN 201810143883A CN 108258905 B CN108258905 B CN 108258905B
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- 238000000034 method Methods 0.000 title claims abstract description 7
- 238000005070 sampling Methods 0.000 claims abstract description 37
- 239000003990 capacitor Substances 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a BOOST circuit and a control method thereof, wherein the BOOST circuit replaces an original single power MOS tube by an N-stage series power circuit in the existing BOOST circuit, and realizes voltage division through multiple tubes in series when the BOOST circuit is turned off in high-voltage input through an N-stage series voltage equalizing circuit, a sampling circuit, a comparison control circuit, a driving circuit and a PWM control circuit, thereby reducing the voltage stress of the MOS tube, solving the problems of high voltage resistance, high cost and difficult shape selection of the power MOS tube in the existing BOOST circuit, along with easy design and high reliability.
Description
Technical Field
The invention relates to a BOOST circuit of a switching power supply, in particular to a BOOST circuit of a BOOST formed by serial connection of two or more than two multi-MOS tubes, which is suitable for application occasions with high voltage and ultra-wide input range.
Background
In recent years, with rapid development of power industries such as photovoltaic power generation and ultra-high voltage power transmission, more and more power sources with ultra-wide input range are required, and it has been difficult for a single-stage power converter to meet such a wide range of input voltage by designing a suitable power device.
In the prior art, for a power supply with an ultra-wide input range, a one-stage BOOST circuit is often added to a front stage of a single-stage power converter, as shown in fig. 1, the existing BOOST circuit is composed of a BOOST inductor L1, a BOOST diode D1, a BOOST capacitor C1 and a switch circuit for controlling charge and discharge of the BOOST capacitor C1, where the switch circuit for controlling charge and discharge of the BOOST capacitor C1 is a MOS transistor Q1. When the input voltage is lower, the input voltage is boosted to an intermediate voltage value of the input voltage range by the front-stage booster circuit, and when the input voltage is higher than the intermediate voltage value, the front-stage BOOST circuit stops working, and the input voltage range of the front-stage converter and the rear-stage converter is reduced by the method, so that the stress of power devices of the front-stage converter and the rear-stage converter is reduced.
The BOOST circuit in the prior art only works when the input voltage is low, but when the input voltage is high, the power MOS tube of the BOOST circuit still bears the high input voltage, so engineers still need to select the MOS tube with very high withstand voltage when designing, the MOS tube is also selected on the market for the power supply with the highest input voltage of only 1KV, and the high withstand voltage MOS tube is not only difficult to select and expensive because of being in a way of being in a beam for the power supply with the highest input voltage of several kilovolts or even higher.
Accordingly, there is a need for improvements over the prior art.
Disclosure of Invention
In view of the above, one of the technical problems to be solved by the present invention is to provide a BOOST circuit, so as to solve the problems of high voltage resistance, high cost and difficult type selection of the power MOS transistor in the existing BOOST circuit; meanwhile, the invention also provides a control method corresponding to the booster circuit, which is a second technical problem to be solved by the invention.
In order to solve the first technical problem, the invention is realized by the following technical measures:
the utility model provides a boost circuit, includes the switch circuit that control boost capacitor C1 charge-discharge, its characterized in that: the switching circuit is a power circuit with N stages connected in series, and N is a natural number more than or equal to 2; the device also comprises an N-level series voltage equalizing circuit, a sampling circuit, a comparison control circuit, a driving circuit and a PWM control circuit; the equalizing circuits of all levels are connected with the switching circuits of all levels in parallel; one end of the sampling circuit is connected with the input positive end of the boost circuit, and the other end of the sampling circuit is connected with the input ground of the boost circuit; the input end of the comparison control circuit is connected with the output end of the sampling circuit; the output end of the comparison control circuit is connected with the PWM control circuit; the input end of the driving circuit is connected with the output end of the comparison control circuit, the output end of the driving circuit is connected with the 2 nd to N th level power circuits, and the PWM control circuit is connected with the first level power circuit; the N-level voltage equalizing circuit is used for equalizing voltage for the N-level power circuit; the sampling circuit is used for sampling input voltage and outputting a sampling signal to the comparison control circuit, the comparison control circuit is used for comparing the sampling signal with a set value and outputting a control signal to the PWM control circuit and the driving circuit, the PWM control circuit generates a first PWM boost control signal according to the control signal, the driving circuit generates a second control signal according to the control signal, the first-stage power circuit executes the action of whether to drive according to the first PWM boost control signal, and the 2 nd-N th-stage power circuits execute the action of whether to drive according to the second control signal.
As a specific implementation mode of the equalizing circuit of each stage, the equalizing circuit consists of a resistor or a resistor and a capacitor which are connected in parallel.
The specific implementation mode of the sampling circuit is formed by connecting a plurality of resistors in series, wherein one series point is the output end of the sampling circuit.
As a specific implementation mode of the comparison control circuit, the comparator is composed of a comparator, wherein the non-inverting input end of the comparator is connected with a reference voltage, the inverting input end of the comparator is the input end of the comparison control circuit, and the output end of the comparator is the output end of the comparison control circuit.
As a specific embodiment of the driving circuit, the driving circuit is composed of a resistor, a driving transformer or a driving chip.
As a specific embodiment of the PWM control circuit, the PWM control circuit is composed of a control chip.
In order to solve the second technical problem, the invention is realized by the following technical measures:
in the control method of the boost circuit, the comparison control circuit compares the sampling signal with the set value, when the sampling signal is lower than the set value, the comparison control circuit outputs a control signal to the PWM control circuit and the driving circuit, the PWM control circuit generates a first PWM boost control signal, the driving circuit generates a second control signal, the first PWM boost control signal drives the first-stage power circuit to work, the second control signal drives the 2 nd-stage to N-stage power circuit to work, and the boost circuit works normally at the moment; when the sampling signal is higher than the set value, the comparison control circuit outputs a control signal to the PWM control circuit and the driving circuit, the PWM control circuit generates a first PWM boost control signal, the driving circuit generates a second control signal, the first PWM boost control signal stops driving the first-stage power circuit to work, the second control signal stops driving the 2 nd-stage power circuit to the N-stage power circuit to work, and the boost circuit stops working at the moment.
Compared with the prior art, the invention has the following beneficial effects:
the BOOST circuit can also realize the BOOST circuit function;
the power device has low voltage endurance, easy selection and lower cost;
the invention is easy to design and has high reliability.
Drawings
The invention will now be described in further detail with reference to the drawings and to specific examples.
FIG. 1 is a BOOST circuit diagram of a prior art scheme;
FIG. 2 is a schematic circuit diagram of a first embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a second embodiment of the present invention.
Detailed Description
In order that the invention may be more readily understood, a more particular description thereof will be rendered by reference to specific embodiments that are illustrated in the appended drawings. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Detailed description of the preferred embodiments
As shown in fig. 2, which is a schematic circuit diagram of a first embodiment of the present invention, the boost circuit of the present invention is a two-stage power circuit, and the circuit composition thereof is as follows:
the two-stage power circuit is as follows: MOS transistors Q1 and Q2;
the two-stage voltage equalizing circuit is as follows: resistors R1, R2;
the sampling circuit is as follows: resistors R3 and R4;
the comparison control circuit is as follows: a comparator U1, a reference voltage Ref;
the driving circuit is as follows: a resistor R5;
the PWM control circuit is as follows: a control chip;
the complete connection relation of this embodiment is: the boost inductor L1 is connected with the anode of the boost diode D1, and the connected points are connected to the input ground of the boost circuit sequentially through the drain electrode of the MOS tube Q1, the source electrode of the MOS tube Q1, the drain electrode of the MOS tube Q2 and the source electrode of the MOS tube Q2; the connection point of the boost inductor L1 and the boost diode D1 is also connected to the input ground of the boost circuit through resistors R1 and R2 in sequence; the serial connection point of the MOS tubes Q1 and Q2 is connected with the serial connection point of the resistors R1 and R2; one end of the sampling resistor R3 and the sampling resistor R4 which are connected in series is connected with the input positive end of the booster circuit, the other end of the sampling resistor R3 and the sampling resistor R4 is connected with the input ground of the booster circuit, and the serial point is the output end of the sampling circuit; the inverting input end of the comparator U1 is connected with the output end of the sampling circuit, the non-inverting input end of the comparator U1 is connected with the reference voltage Ref, and the output end of the comparator U1 is the output end of the comparison control circuit; the output end of the comparison control circuit is connected with the PWM control circuit; one end of the driving resistor R5 is connected with the output end of the comparison control circuit, the other end of the driving resistor R5 is connected with the driving pin of the MOS tube Q2, and a first PWM boost control signal generated by the PWM control circuit is connected with the driving pin of the MOS tube Q1.
The working principle of the invention is as follows:
the input voltage is compared with the reference voltage in the comparison circuit after being divided by the voltage dividing resistor in the sampling circuit, when the input voltage is detected to be lower than the voltage value set by the voltage boosting circuit, the comparison control circuit outputs a control signal to output a second control signal through the driving resistor R5 of the driving circuit to control the MOS tube Q2 to be opened, meanwhile, the control signal output by the comparison control circuit controls the PWM voltage boosting control circuit and starts the first PWM voltage boosting control signal to start driving the MOS tube Q1, at the moment, the voltage boosting circuit works normally, when the input voltage is detected to be higher than the voltage value set by the voltage boosting circuit, the comparison control circuit outputs a second control signal through the driving resistor R5 of the driving circuit to control and close the MOS tube Q2, meanwhile, the control signal output by the comparison control circuit controls the PWM voltage boosting control circuit and closes the first PWM voltage boosting control signal to stop driving the MOS tube Q1, and the BOOST voltage boosting circuit stops working, at the moment, the input voltage is equally divided by the voltage equalizing resistors of the MOS tube Q1 and Q2 of the voltage equalizing circuit so that the MOS tube is protected from high voltage breakdown.
Detailed description of the preferred embodiments
Fig. 3 is a schematic circuit diagram of a second embodiment of the present invention, which is different from fig. 2 in that the power circuit is composed of N stages, the voltage equalizing circuit is composed of N stages, and the driving circuit is used for driving and controlling the power circuits of the 2 nd to the N th stages simultaneously; the working principle is the same as that of the first embodiment, and is not described in detail herein.
The embodiments of the present invention are not limited thereto, and the implementation circuit of the present invention may be modified, replaced or altered in various other ways by using the general knowledge and conventional means in the art according to the above-mentioned embodiments of the present invention without departing from the basic technical concept of the present invention, and all the modifications and alterations fall within the scope of the claims of the present invention.
Claims (7)
1. The utility model provides a boost circuit, includes the switch circuit that control boost capacitor C1 charge-discharge, its characterized in that: the switching circuit is a power circuit with N stages connected in series, and N is a natural number more than or equal to 2; the device also comprises an N-level series voltage equalizing circuit, a sampling circuit, a comparison control circuit, a driving circuit and a PWM control circuit; the equalizing circuits of all levels are connected with the switching circuits of all levels in parallel; one end of the sampling circuit is connected with the input positive end of the boost circuit, and the other end of the sampling circuit is connected with the input ground of the boost circuit; the input end of the comparison control circuit is connected with the output end of the sampling circuit; the output end of the comparison control circuit is connected with the PWM control circuit; the input end of the driving circuit is connected with the output end of the comparison control circuit, the output end of the driving circuit is connected with the 2 nd to N th level power circuits, and the PWM control circuit is connected with the first level power circuit; the N-level voltage equalizing circuit is used for equalizing voltage for the N-level power circuit; the sampling circuit is used for sampling input voltage and outputting a sampling signal to the comparison control circuit, the comparison control circuit is used for comparing the sampling signal with a set value and outputting a control signal to the PWM control circuit and the driving circuit, the PWM control circuit generates a first PWM boost control signal according to the control signal, the driving circuit generates a second control signal according to the control signal, the first-stage power circuit executes the action of whether to drive according to the first PWM boost control signal, and the 2 nd-N th-stage power circuits execute the action of whether to drive according to the second control signal; when the sampling circuit detects that the input voltage is lower than the voltage value set by the boost circuit, the second control signal controls the 2 nd to N th power circuits to be continuously turned on, and the first PWM boost control signal controls the first stage power circuit so as to control the boost circuit to work normally; when the sampling circuit detects that the input voltage is higher than the voltage value set by the boost circuit, the second control signal controls the 2 nd to N th stage power circuits to be continuously turned off, the first PWM boost control signal is turned off so as to stop driving the first stage power circuit, and the boost circuit stops working.
2. The boost circuit of claim 1, wherein: the voltage equalizing circuit of each stage is composed of a resistor or a resistor and a capacitor which are connected in parallel.
3. The boost circuit of claim 1, wherein: the sampling circuit is formed by connecting a plurality of resistors in series, wherein one series point is the output end of the sampling circuit.
4. The boost circuit of claim 1, wherein: the comparison control circuit consists of a comparator, wherein the non-inverting input end of the comparator is connected with the reference voltage, the inverting input end of the comparator is the input end of the comparison control circuit, and the output end of the comparator is the output end of the comparison control circuit.
5. The boost circuit of claim 1, wherein: the driving circuit is composed of a resistor or a driving transformer or a driving chip.
6. The boost circuit of claim 1, wherein: the PWM control circuit is composed of a control chip.
7. A control method of the booster circuit according to any one of claims 1 to 6, characterized in that: the comparison control circuit compares the sampling signal with a set value, when the sampling signal is lower than the set value, the comparison control circuit outputs a control signal to the PWM control circuit and the driving circuit, the PWM control circuit generates a first PWM boost control signal, the driving circuit generates a second control signal, the first PWM boost control signal drives the first-stage power circuit to work, the second control signal drives the 2 nd-N th-stage power circuit to work, and the boost circuit works normally at the moment; when the sampling signal is higher than the set value, the comparison control circuit outputs a control signal to the PWM control circuit and the driving circuit, the PWM control circuit generates a first PWM boost control signal, the driving circuit generates a second control signal, the first PWM boost control signal stops driving the first-stage power circuit to work, the second control signal stops driving the 2 nd-stage power circuit to the N-stage power circuit to work, and the boost circuit stops working at the moment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810143883.XA CN108258905B (en) | 2018-02-12 | 2018-02-12 | Boost circuit and control method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810143883.XA CN108258905B (en) | 2018-02-12 | 2018-02-12 | Boost circuit and control method thereof |
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| CN108258905A CN108258905A (en) | 2018-07-06 |
| CN108258905B true CN108258905B (en) | 2024-04-12 |
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| CN113162404B (en) * | 2021-05-06 | 2023-06-02 | 上海广为焊接设备有限公司 | Control circuit and method of wide input voltage boost circuit |
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| CN108258905A (en) | 2018-07-06 |
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