CN102751854A - Circuit of switching elements - Google Patents
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- CN102751854A CN102751854A CN2011100968165A CN201110096816A CN102751854A CN 102751854 A CN102751854 A CN 102751854A CN 2011100968165 A CN2011100968165 A CN 2011100968165A CN 201110096816 A CN201110096816 A CN 201110096816A CN 102751854 A CN102751854 A CN 102751854A
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Abstract
The invention discloses a circuit of switching elements, which comprises N (number) switch tubes connected in series through source electrodes and drain electrodes, N-1 pieces of diodes and N-1 pieces of voltage stabilizing elements. The grid electrode of the first switch tube is taken as the first input end of the circuit and the source electrode of the first switch tube is taken as the common end of the second input end and the second output end of the circuit; the drain electrode of the N switch tube is taken as the first output end of the circuit; the cathode of the ith diode and the cathode of the ith voltage stabilizing element are coupled to the grid electrode of the i+1th switch tube; the anode of the ith diode is connected to the positive pole of a power source; the source electrode of the i+1th switch tube is connected with the drain electrode of the ith switch tube; and the drain electrode of the i+1th switch tube is connected with the source electrode of the i+2th switch tube. According to the circuit, a plurality of switch tubes with low voltage tolerance are connected in series and when a certain switch tube is conducted, the power source of the circuit directly provides driving voltage to the switch tube, so no extra power loss can be produced. The invention achieves the purposes of reducing the loss and improving the reliability and the efficiency of the entire circuit.
Description
Technical field
The present invention relates to electric and electronic technical field, relate to a kind of switching device circuit in particular.
Background technology
In existing electrical network; For the higher occasion of line voltage need use withstand voltage as the high-voltage transistor more than the 1000V as switching device; But because the above transistor of withstand voltage 1000V belongs to relatively special device, procurement cycle is long, price is high.Therefore, the general alternative high-voltage transistor of the withstand voltage circuit of raising that adopts uses in the prior art, mainly contains following three kinds of circuit in the prior art.
One of which constitutes the circuit that improves device withstand voltage by two metal-oxide-semiconductor Q1 and Q2 series connection.As shown in Figure 1; Manage Q1 down and receive the direct driving of pwm control circuit; When Q1 by becoming from conducting when turn-offing, the drain electrode of Q1 and source electrode voltage increase, when the drain electrode of Q1 and source electrode voltage during near voltage-stabiliser tube ZD1 voltage; Grid and the source voltage of pipe Q2 are lower than the conducting threshold voltage on this moment, and Q2 gets into off state.When Q1, Q2 turn-offed, the voltage that Q1 shares was by the voltage stabilizing value decision of voltage-stabiliser tube ZD1.Wherein, the DS voltage descends when Q1 transfers conducting to by shutoff, at this moment; Resistance R 1 will be for Q2 provides drive current, so that also conducting of Q2, still; In this circuit,, can not when the Q2 conducting, bigger drive current be provided, cause the conducting speed of Q2 slow because R1 receives the restriction of oneself power consumption; And cause bigger Q2 switching loss and conduction loss, so this circuit efficiency is low, only is applicable to the occasion that power is very little usually.
They are two years old; Circuit for the raising device withstand voltage that provides in the patent (application number is 200810028422.4); As shown in Figure 2, mainly based on the prior art of one of which, be employed in voltage-stabiliser tube D4 and go up a parallelly connected capacitor C 2; The discharge of C2 improves the driving of Q1 during through the Q2 conducting, and between switching tube Q1 gate pole and source electrode, adopts resistance and diode series connection to replace the voltage-stabiliser tube ZD1 among Fig. 1; But, though adopt the discharge of this circuit C2 can improve the driving force of Q1, not receiving the restriction of R1 oneself power consumption, itself can produce bigger loss in the C2 charge and discharge process.Though therefore this circuit and Fig. 1 are applicable to the application of more high-power grade, efficient is still lower.
Its three: for solving among Fig. 1, on manage the not enough problem of Q1 driving force, adopts circuit as shown in Figure 3, when last pipe SW2 conducting, required drive current is greatly provided by CB1; When last pipe SW2 and following pipe SW1 shutoff, its voltage distribution is by the voltage decision of CB1, CB2, and the dividing potential drop of CB1 and CB2 is then determined by the no-load voltage ratio of winding NP1 and NP2; But; This circuit is comparatively complicated, though strengthened the driving force of last pipe SW2, in the driving process of SW2; And still can produce bigger loss in the process of the balance of keeping capacitor C B1 and CB2 voltage, cause the efficient of entire circuit to reduce.
Have and above-mentionedly know, no matter adopt of the prior art which kind of improve the circuit of device withstand voltage, all can exist the device loss in the circuit excessive, thereby reduce the problem of entire circuit efficient, therefore, the circuit of a kind of new raising device withstand voltage of exigence.
Summary of the invention
In view of this, the present invention provides a kind of switching device circuit, and in improving the device withstand voltage process, to produce loss excessive to overcome in the prior art, causes the reliability that reduces entire circuit and the problem of efficient.
For realizing above-mentioned purpose, the present invention provides following technical scheme:
A kind of switching device circuit comprises: N switching tube that is in series through source electrode and drain electrode reaches N-1 diode and voltage-stabilizing device;
The grid of the 1st switching tube is the first input end of this circuit, and source electrode is second input of this circuit and the common port of second output, and source electrode is connected with the power cathode of this circuit; The drain electrode of N switching tube is first output of this circuit;
The negative electrode of i diode and the negative electrode of i voltage-stabilizing device are coupled to the grid place of i+1 switching tube, and the anode of said i diode is connected in positive source;
The source electrode of said i+1 switching tube is connected with the drain electrode of i switching tube, and the drain electrode of said i+1 switching tube is connected with the source electrode of i+2 switching tube;
Wherein, the value of said N is the positive integer more than or equal to 3, and the span of i is 1～(N-1).
Preferably, the anode of said i voltage-stabilizing device is connected in the grid place or the source electrode place of arbitrary switching tube in the 1st switching tube to the i switching tube.
Preferably, also comprise, be parallel to a capacitor C i on the said voltage-stabilizing device at least.
Preferably, also comprise, be parallel to a capacitor C j on the said diode at least.
Preferably, also comprise, be connected in the positive source of said circuit and first capacitor C 1 between the negative pole.
Preferably, also comprise, be parallel to grid and the N between the source electrode clamping protection module of N switching tube respectively;
Said clamping protection module comprises: voltage-stabiliser tube, or transient voltage suppresses diode TVS.
Preferably, a said N-1 voltage-stabilizing device comprises: voltage-stabiliser tube, or transient voltage suppresses diode TVS.
Preferably, a said N switching tube comprises:
N channel-type metal-oxide-semiconductor NMOS, or insulated gate bipolar transistor IGBT, or large power triode;
The corresponding said drain electrode of the collector electrode of said insulated gate bipolar transistor IGBT, the corresponding said source electrode of emitter;
The corresponding said drain electrode of the collector electrode of said large power triode, the corresponding said source electrode of emitter, the corresponding said grid of base stage.
Preferably, said circuit is as the switching tube among the buck translation circuit BUCK, and the drain electrode of said N switching tube is connected in the anode of the diode in the said BUCK circuit.
Preferably, said circuit is as the switching tube in the booster circuit BOOST circuit, and the drain electrode of said N switching tube is connected in the anode of the diode in the said BUCK circuit.
Preferably, said circuit is as the switching tube in the circuit of reversed excitation, and the drain electrode of said N switching tube links to each other with the former limit winding of said circuit of reversed excitation.
Can know that via above-mentioned technical scheme compared with prior art, the present invention openly provides a kind of switching device circuit, mainly through N switching tube that is in series through source electrode and drain electrode, and N-1 diode and voltage-stabilizing device formation; Wherein, the grid of the 1st switching tube is the first input end of this circuit, and source electrode is second input of this circuit and the common port of second output, and this source electrode also is connected with the circuit power negative pole; The drain electrode of N switching tube is first output of this circuit; The negative electrode of i diode and the negative electrode of i voltage-stabilizing device are coupled to the grid place of i+1 switching tube, and the anode of i diode is connected in positive source; The source electrode of i+1 switching tube is connected with the drain electrode of i switching tube, and the drain electrode of i+1 switching tube is connected with the source electrode of i+2 switching tube.Through a plurality of low withstand voltage switching tube series connection of above-mentioned employing; And when a certain switching tube conducting; The driving voltage of this switching tube directly directly is provided by circuit power; Without any need for change-over circuit, therefore can not produce extra loss, can realize reducing the wastage, improving the purpose of entire circuit reliability and high efficiency.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is embodiments of the invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to the accompanying drawing that provides.
Fig. 1 is a kind of switching device circuit diagram of the prior art;
Fig. 2 is an another kind of switching device circuit diagram of the prior art;
Fig. 3 is an another kind of switching device circuit diagram of the prior art;
Fig. 4 is the embodiment of the invention one disclosed a kind of switching device circuit diagram;
Fig. 5 is the embodiment of the invention one a disclosed another kind of switching device circuit diagram;
Fig. 6 is the embodiment of the invention two disclosed a kind of switching device circuit diagrams;
Fig. 7 is the embodiment of the invention three disclosed a kind of switching device circuit diagrams;
Fig. 8 is the circuit diagram of the embodiment of the invention during as the switching tube in the circuit of reversed excitation;
Fig. 9 is the circuit diagram of the embodiment of the invention during as the switching tube in the BUCK circuit;
Figure 10 is the circuit diagram of the embodiment of the invention during as the switching tube in the BOOST circuit.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
Can know by background technology; The circuit of raising device withstand voltage of the prior art; When switching tube provides driving voltage; The influence that the capital receives resistance in the circuit or electric capacity causes the driving process of switching tube and in keeping the equilibrium process of entire circuit, all can produce bigger loss, thereby influences the reliability and the high efficiency of entire circuit.Therefore, the embodiment of the invention discloses a kind of circuit of new switching device, mainly through N switching tube that is in series through source electrode and drain electrode, and N-1 diode and voltage-stabilizing device formation; Circuit of the present invention comprises input and output, and input comprises two terminals, is respectively the first input end and second input, and output comprises two terminals, is respectively second input and second output; Wherein, with the grid of the 1st switching tube first input end as this circuit, source electrode is as second input of this circuit and the common port of second output, and this source electrode also is connected with the power cathode of this circuit; For the N switching tube, then with first output of its drain electrode as this circuit.
The annexation of an above-mentioned N switching tube and N-1 diode and voltage-stabilizing device is: the negative electrode of i diode and the negative electrode of i voltage-stabilizing device are coupled to the grid place of i+1 switching tube, and the anode of said i diode is connected in positive source; The source electrode of said i+1 switching tube is connected with the drain electrode of i switching tube, and the drain electrode of said i+1 switching tube is connected with the source electrode of i+2 switching tube; Wherein, the value of said N is the positive integer more than or equal to 3, and the span of i is 1～(N-1).
Through a plurality of low withstand voltage switching tube series connection of above-mentioned employing; And when a certain switching tube conducting; The driving voltage of this switching tube directly directly is provided by circuit power; Without any need for change-over circuit, therefore can not produce extra loss, can realize reducing the wastage, improving the purpose of entire circuit reliability and high efficiency.Detailed process describes through following examples.
Embodiment one
As shown in Figure 4, be the disclosed a kind of switching device circuit diagram of the embodiment of the invention, mainly comprise: N switching tube, and N-1 diode and voltage-stabilizing device.
The first terminal of switching tube shown in Fig. 4 is a source class, and second terminal is drain electrode, and the 3rd terminal is a grid.All switching tubes are in series through source class and drain electrode, and the process of connection is specially:
The drain electrode of i switching tube Qi connects the source electrode of i+1 switching tube Q (i+1), and the drain electrode of this i+1 switching tube Q (i+1) connects the source class of i+2 switching tube Q (i+2).
The negative electrode of i voltage-stabilizing device ZDi and i diode Di is connected; And be coupled to the grid of i+1 switching tube Q (i+1); Promptly the negative electrode of i diode Di connects the grid of i+1 switching tube Q (i+1), and at this moment, the anode of i diode Di is the positive pole of connecting circuit power supply then; The grid of i+1 switching tube Q (i+1) connects the source class of the 1st switching tube Q1 through i voltage-stabilizing device ZDi, and the source class of the 1st switching tube Q1 is the negative pole of connecting circuit power supply then.Need to prove that in disclosed this embodiment, the grid of all switching tubes all is connected with the source class of the 1st switching tube Q1 through the voltage-stabilizing device of its connection, promptly the anode of all voltage-stabilizing devices all is connected in the source electrode place of the 1st switching tube.
The grid of the 1st switching tube Q1 and source electrode are as the first input end and second input of this circuit; The source class of N switching tube QN and the source electrode of the 1st switching tube Q1 are as first output and second output of this circuit; Wherein, the source electrode of the 1st switching tube Q1 is as second input of this circuit and the public terminal of second output.
Need to prove that to foregoing description about the number of the switching tube in this circuit, diode and voltage-stabilizing device, wherein, the value of N is the positive integer more than or equal to 3, the span of i then is 1～(N-1).
Need to prove that on voltage-stabiliser tube ZDi, can also be parallel with capacitor C i, this electric capacity has quickened turning on and off of switching tube.Can be on each voltage-stabiliser tube ZDi shunt capacitances all, also can be at shunt capacitance Ci on or the part voltage-stabiliser tube.In addition, on diode Di, also can be parallel with capacitor C j, the break-make that this electric capacity equally can the acceleration switch pipe, can be on each diode shunt capacitance Cj all, also can be at shunt capacitance Cj on or the part diode.Said capacitor C i and Cj can also be the parasitic capacitances of diode or voltage-stabiliser tube.
The concrete course of work of the disclosed embodiment of the invention described above is:
The 1st switching tube Q1 is through the first input end and first output; The direct driving of received pulse drive signal can be known by circuit structure, when the conducting of switching tube Q (i-1); Be connected in diode D (i-1) conducting at switching tube Qi grid place; At this moment, Vcc is the gate charges of switching tube Qi through this diode D (i-1), until the Qi conducting.Therefore, after switching tube Q1 drove conducting by pulse drive signal, Q2 to QN is conducting successively then.
Under the control of switching tube Q1, turn-off at pulse drive signal, at this moment, because the shutoff of switching tube Q (i-1); The drain electrode of this switching tube and the voltage of source electrode rise; When rising to Vcc, the diode D (i-1) that is connected in switching tube Qi grid place ends, at this moment; The grid voltage of switching tube Qi reduces, and turn-offs until this switching tube Qi.Therefore, because switching tube Q1 is had no progeny by pulse drive signal control ShiShimonoseki, Q2 to QN then turn-offs successively.
By on can know, be in series with a plurality of switching tubes in the circuit provided by the invention, and the driving voltage that offers the i switching tube directly comes from the power supply of circuit with low withstand voltage, therefore do not need any change-over circuit.Wherein, when the conducting of i switching tube, needed driving energy when power supply only need provide i switching tube gate turn-on can not produce other loss; When i+1 to the N switching tube turn-offs; I diode in the circuit separates power supply and i voltage-stabilizing device, and can not produce extra loss this moment yet, therefore; The invention provides a kind of when improving device withstand voltage; Can also reduce circuit loss, and the circuit structure that improves entire circuit reliability and high efficiency, and circuit provided by the present invention can also substitute the circuit occasion of the switching tube that needs a high withstand voltage.
In addition, as shown in Figure 5 on the basis of the disclosed embodiment of the invention described above, also comprise in this circuit: be connected in the positive source of said circuit and first capacitor C 1 between the negative pole.
As shown in Figure 5, also comprise in this circuit: be parallel to grid and the N between the source electrode clamping protection module of N switching tube respectively, this clamping protection module can be voltage-stabiliser tube, also can suppress diode TVS for transient voltage.
Embodiment two
As shown in Figure 6, the invention also discloses a kind of switching device circuit, mainly comprise: N switching tube, and N-1 diode and voltage-stabilizing device.
The first terminal of switching tube shown in Fig. 6 is a source class, and second terminal is drain electrode, and the 3rd terminal is a grid.All switching tubes are in series through source class and drain electrode, and the process of connection is specially:
The drain electrode of i switching tube Qi connects the source electrode of i+1 switching tube Q (i+1), and the drain electrode of this i+1 switching tube Q (i+1) connects the source class of i+2 switching tube Q (i+2).
The negative electrode of i voltage-stabilizing device ZDi and i diode Di is connected; And be coupled to the grid of i+1 switching tube; Promptly the negative electrode of i diode Di connects the grid of i+1 switching tube Q (i+1); At this moment, the anode of i diode Di is the positive pole of connecting circuit power supply then, and the grid of i+1 switching tube Q (i+1) is connected in the grid of i switching tube Qi through i voltage-stabilizing device ZDi.
Embodiment three
As shown in Figure 7, the invention also discloses a kind of switching device circuit, mainly comprise: N switching tube, and N-1 diode and voltage-stabilizing device.
The first terminal of switching tube shown in Fig. 7 is a source class, and second terminal is drain electrode, and the 3rd terminal is a grid.All switching tubes are in series through source class and drain electrode, and the process of connection is specially:
The drain electrode of i switching tube Qi connects the source electrode of i+1 switching tube Q (i+1), and the drain electrode of this i+1 switching tube Q (i+1) connects the source class of i+2 switching tube Q (i+2).
The negative electrode of i voltage-stabilizing device ZDi and i diode Di is connected; And be coupled to the grid of i+1 switching tube; Promptly the negative electrode of i diode Di connects the grid of i+1 switching tube Q (i+1); At this moment, the anode of i diode Di is the positive pole of connecting circuit power supply then, and the grid of i+1 switching tube Q (i+1) is connected in the source electrode of i switching tube Qi through i voltage-stabilizing device ZDi.
In embodiment two and embodiment three; With different among the embodiment one be the connected mode of voltage-stabilizing device; Therefore, for metal-oxide-semiconductor, the grid that the negative electrode of at least one voltage-stabilizing device connects Qi gets final product; The anode of the voltage-stabilizing device that is connected then can connect the grid place of arbitrary switching tube among the 1st switching tube Q1 to the i switching tube Qi, as be connected to the grid of Qi among Fig. 6 for ZDi; Or the source class place of the 1st arbitrary switching tube among switching tube Q1 to the i switching tube Qi, as be connected to the source electrode of Qi among Fig. 7 for ZDi.The value of the just voltage-stabiliser tube that it changed is different, can't influence the course of work of entire circuit.Value like each the voltage-stabilizing device ZDi among Fig. 4 is relevant to all withstand voltages of switching tube Qi with switching tube Q1, and in Fig. 5, the value of voltage-stabilizing device ZDi is relevant as for the withstand voltage of corresponding switch pipe Qi.
Above-mentioned disclosed embodiment, the same employing is in series with a plurality of modes with switching tube of low withstand voltage, and the driving voltage that offers the i switching tube also directly comes from the power supply of circuit, therefore do not need any change-over circuit.Can realize reducing the wastage, improving the purpose of entire circuit reliability and high efficiency.
Need to prove that in the disclosed embodiment of the invention described above, a said N-1 voltage-stabilizing device can be voltage-stabiliser tube, also can suppress diode TVS for transient voltage; A said N switching tube can also can be insulated gate bipolar transistor IGBT for N channel-type metal-oxide-semiconductor NMOS, also can be large power triode.Wherein, when switching tube was IGBT, according to its operation principle, its collector electrode was the drain electrode among the corresponding embodiment, the corresponding source electrode of emitter; When switching tube is large power triode, according to its operation principle, the drain electrode among the corresponding embodiment of its collector electrode, the corresponding source electrode of emitter, the then corresponding grid of base stage.
Need to prove; Fig. 4, Fig. 6 and embodiment shown in Figure 7 can make up use; Be that negative electrode is connected in all voltage-stabiliser tubes of switching tube grid; The anode of part voltage-stabiliser tube ZDi connects the source electrode of the first switching tube Q1, and the anode of a part of voltage-stabiliser tube ZDi connects the grid of switching tube Qi, and the anode of another part voltage-stabiliser tube ZDi connects the source electrode of switching tube Q1 to arbitrary switching tube of Qi.
In addition; Circuit in the invention described above the disclosed embodiments; Can be packaged into an individual semiconductor device that comprises four pins or pin, said four pins or pin are respectively the common port of said first input end, first output, power positive end and second input, second output.
When packaged foregoing circuit during as the switching tube in the circuit of reversed excitation, as shown in Figure 8, the drain electrode of said N switching tube links to each other with the former limit winding of said circuit of reversed excitation.
When packaged foregoing circuit during as the switching tube among the buck translation circuit BUCK, as shown in Figure 9, the drain electrode of said N switching tube is connected in the anode of the diode in the said BUCK circuit.
When packaged foregoing circuit during as the switching tube in the booster circuit BOOST circuit, shown in figure 10, the drain electrode of said N switching tube is connected in the anode of the diode in the said BUCK circuit.
In sum
Circuit through the withstand voltage device of disclosed raising among the invention described above embodiment; Employing is in series with a plurality of switching tubes with low withstand voltage and substitutes high-voltage transistor; And when a certain switching tube conducting, the driving voltage of this switching tube directly directly is provided, by circuit power without any need for change-over circuit; Therefore extra loss can be do not produced, the purpose of entire circuit reliability and high efficiency can be realized reducing the wastage, improving.And circuit provided by the present invention can also substitute the circuit occasion of the switching tube that needs a high withstand voltage.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.For the disclosed device of embodiment, because it is corresponding with the embodiment disclosed method, so description is fairly simple, relevant part is partly explained referring to method and is got final product.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (11)
1. a switching device circuit is characterized in that, comprising: N switching tube that is in series through source electrode and drain electrode reaches N-1 diode and voltage-stabilizing device;
The grid of the 1st switching tube is the first input end of this circuit, and source electrode is second input of this circuit and the common port of second output, and source electrode is connected with the power cathode of this circuit; The drain electrode of N switching tube is first output of this circuit;
The negative electrode of i diode and the negative electrode of i voltage-stabilizing device are coupled to the grid place of i+1 switching tube, and the anode of said i diode is connected in positive source;
The source electrode of said i+1 switching tube is connected with the drain electrode of i switching tube, and the drain electrode of said i+1 switching tube is connected with the source electrode of i+2 switching tube;
Wherein, the value of said N is the positive integer more than or equal to 3, and the span of i is 1～(N-1).
2. circuit according to claim 1 is characterized in that, the anode of said i voltage-stabilizing device is connected in the grid place or the source electrode place of arbitrary switching tube in the 1st switching tube to the i switching tube.
3. circuit according to claim 1 is characterized in that, also comprises, is parallel to a capacitor C i on the said voltage-stabilizing device at least.
4. circuit according to claim 1 is characterized in that, also comprises, is parallel to a capacitor C j on the said diode at least.
5. circuit according to claim 1 is characterized in that, also comprises, is connected in the positive source of said circuit and first capacitor C 1 between the negative pole.
6. circuit according to claim 1 is characterized in that, also comprises, is parallel to grid and the N between the source electrode clamping protection module of N switching tube respectively;
Said clamping protection module comprises: voltage-stabiliser tube, or transient voltage suppresses diode TVS.
7. circuit according to claim 1 is characterized in that, a said N-1 voltage-stabilizing device comprises: voltage-stabiliser tube, or transient voltage suppresses diode TVS.
8. circuit according to claim 1 is characterized in that, a said N switching tube comprises:
N channel-type metal-oxide-semiconductor NMOS, or insulated gate bipolar transistor IGBT, or large power triode;
The corresponding said drain electrode of the collector electrode of said insulated gate bipolar transistor IGBT, the corresponding said source electrode of emitter;
The corresponding said drain electrode of the collector electrode of said large power triode, the corresponding said source electrode of emitter, the corresponding said grid of base stage.
9. circuit according to claim 1 is characterized in that, said circuit is during as the switching tube among the buck translation circuit BUCK, and the drain electrode of said N switching tube is connected in the anode of the diode in the said BUCK circuit.
10. circuit according to claim 1 is characterized in that, said circuit is during as the switching tube in the booster circuit BOOST circuit, and the drain electrode of said N switching tube is connected in the anode of the diode in the said BUCK circuit.
11. circuit according to claim 1 is characterized in that, said circuit is during as the switching tube in the circuit of reversed excitation, and the drain electrode of said N switching tube links to each other with the former limit winding of said circuit of reversed excitation.
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| CN104092383A (en) * | 2014-07-01 | 2014-10-08 | 浙江海得新能源有限公司 | High-voltage input auxiliary power supply circuit and working method thereof |
| CN106444355A (en) * | 2015-08-06 | 2017-02-22 | 安士能有限及两合公司 | Safety switch |
| CN106444355B (en) * | 2015-08-06 | 2021-09-07 | 安士能有限及两合公司 | Safety switch |
| CN105978300A (en) * | 2016-07-13 | 2016-09-28 | 西安交通大学 | Cascading type high-voltage solid-state switch |
| CN108347161A (en) * | 2017-01-25 | 2018-07-31 | 博世力士乐(西安)电子传动与控制有限公司 | Frequency converter soft starting circuit and frequency converter comprising it |
| CN108347161B (en) * | 2017-01-25 | 2021-11-23 | 博世力士乐(西安)电子传动与控制有限公司 | Frequency converter soft start circuit and frequency converter comprising same |
| CN108258905A (en) * | 2018-02-12 | 2018-07-06 | 广州金升阳科技有限公司 | A kind of booster circuit and its control method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102751854B (en) | 2014-07-16 |
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