CN203503655U - 四通路隔离型点火电路 - Google Patents
四通路隔离型点火电路 Download PDFInfo
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- CN203503655U CN203503655U CN201320635391.5U CN201320635391U CN203503655U CN 203503655 U CN203503655 U CN 203503655U CN 201320635391 U CN201320635391 U CN 201320635391U CN 203503655 U CN203503655 U CN 203503655U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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Abstract
本实用新型公开了一种四通路隔离型点火电路，通过点火电路由分立元器件到混合集成电路的转化，进一步提高产品的性能与可靠性水平。该四通路隔离型点火电路，包括管壳，在管壳上焊接有陶瓷基片，在陶瓷基片上设有厚膜电阻，在陶瓷基片上焊接有作为功率输出管的功率MOS场效应晶体管芯片，在陶瓷基片上粘接有作为前级控制电路与后级功率输出电路之间电气隔离器件的光电耦合器，在陶瓷基片上粘接有作为前级控制器件的四路运算放大器芯片，各元器件之间、元器件与焊盘之间、焊盘与外引线之间、元器件与外引线之间通过金属丝实现电气连接。
Description
技术领域
本实用新型涉及一种混合集成电路，尤其是涉及一种四通路隔离型点火电路。
背景技术
普通点火电路多为分立元器件连接的方式构成，该种点火电路占用空间较大、装配以及安装调试过程均比较繁琐；中间级一般采用光MOS固体继电器作为输出级与输出级的光电隔离器件，体积较大、不易二次集成；输出级一般采用功率三极管，工作时耗散功率较大，脉冲能力较差；在一些恶劣环境条件下，如高温、低温、强振动等条件下，普通组件无法正常工作；目前，整机单位对武器装备小型化的需求越来越迫切，采用分立元器件连接的方式构成的点火电路已逐渐无法满足整机电路的使用要求。
发明内容
本实用新型要解决的技术问题是提供一种四通路隔离型点火电路，通过点火电路由分立元器件到混合集成电路的转化，进一步提高产品的性能与可靠性水平。
本实用新型涉及的四通路隔离型点火电路，包括管壳1，在管壳1上焊接有陶瓷基片3，其特殊之处是：在陶瓷基片3上设有厚膜电阻7，在陶瓷基片3上焊接有作为功率输出管的功率MOS场效应晶体管芯片4，在陶瓷基片4上粘接有作为前级控制电路与后级功率输出电路之间电气隔离器件的光电耦合器6，在陶瓷基片3上粘接有作为前级控制器件的四路运算放大器芯片9，各元器件之间、元器件与焊盘8之间、焊盘8与外引线10之间、元器件与外引线10之间通过金属丝5实现电气连接。
管壳1的散热基板101为钨铜材质，具有和陶瓷基片相匹配的线性膨胀系数，且散热性能好。
陶瓷基片3为高纯氧化铝陶瓷基片，具有良好的热导率。
光电耦合器6为表贴封装器件。
本实用新型的优点是：管壳与器件之间采用陶瓷基片进行隔离，管壳壳体不作为输出电极。功率MOS场效应晶体管作为功率输出管，具有输入阻抗高、脉冲能力强、导通电阻小以及驱动电路简单等特点。光电耦合器作为前级控制电路与后级功率输出电路之间的电气隔离器件，具有体积小、重量轻等特点。四路运算放大器作为前级控制器件，通过偏置电阻设定为比较器模式，通过同相输入端的TTL高低电平变化驱动后级电路的大电流输出；该点火电路为集成化结构，具有体积小、重量轻、可靠性高等特点；产品的筛选、安装、调试、使用以及维修更为方便快捷；产品的质量与性能指标更加优越。
附图说明
图1是本实用新型的结构示意图；
图2是图1（去掉管帽）的俯视图；
图中：管壳1、钨铜基板101、焊料2、陶瓷基片3、功率MOS场效应晶体管芯片4、金属丝5、光电耦合器6、厚膜电阻7、焊盘（压焊区）8、四路运算放大器芯片9，外引线10。
具体实施方式
如图所示，本实用新型包括由管座和管帽构成的管壳1，在管壳1上设置有陶瓷基片3，在陶瓷基片3上设置有功率MOS场效应晶体管芯片4、光电耦合器6、四路运算放大器芯片9以及厚膜电阻7，其中管壳1的散热基板101为钨铜材质，陶瓷基片3为高纯氧化铝陶瓷，陶瓷基片3与管壳1之间、功率MOS场效应晶体管芯片4与陶瓷基片3之间采用铅锡银合金焊料2烧结而成。光电耦合器6为表贴封装器件，与陶瓷基片3之间采用回流焊焊接，粘接材料为铅锡银焊膏。四路运算放大器芯片9与陶瓷基片3采用高导热绝缘胶粘接，厚膜电阻7通过丝网印刷、激光调阻技术制作在陶瓷基片3上，各元器件之间、元器件与焊盘（压焊区）8之间、焊盘（压焊区）8与外引线10之间、元器件与外引线10之间通过金属丝5来完成电气连接，产品采用金属气密性封装。
Claims (1)
1.四通路隔离型点火电路，包括管壳，在管壳上焊接有陶瓷基片，在陶瓷基片上设有厚膜电阻，其特征是：在陶瓷基片上焊接有作为功率输出管的功率MOS场效应晶体管芯片，在陶瓷基片上粘接有作为前级控制电路与后级功率输出电路之间电气隔离器件的光电耦合器，在陶瓷基片上粘接有作为前级控制器件的四路运算放大器芯片，各元器件之间、元器件与焊盘之间、焊盘与外引线之间、元器件与外引线之间通过金属丝实现电气连接。
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| CN201320635391.5U CN203503655U (zh) | 2013-10-16 | 2013-10-16 | 四通路隔离型点火电路 |
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| CN201320635391.5U CN203503655U (zh) | 2013-10-16 | 2013-10-16 | 四通路隔离型点火电路 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105050329A (zh) * | 2015-06-30 | 2015-11-11 | 成都八九九科技有限公司 | 集总参数微带隔离器、环行器厚膜生产工艺 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105050329A (zh) * | 2015-06-30 | 2015-11-11 | 成都八九九科技有限公司 | 集总参数微带隔离器、环行器厚膜生产工艺 |
| CN105050329B (zh) * | 2015-06-30 | 2017-10-03 | 成都八九九科技有限公司 | 集总参数微带隔离器、环行器厚膜生产工艺 |
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| CB03 | Change of inventor or designer information |
Inventor after: Xu Baolian Inventor after: Zheng Songhai Inventor after: Ding Li Inventor after: Gao Guangliang Inventor after: Liu Shuai Inventor after: Chen Hao Inventor after: Ma Xin Inventor before: Xu Baolian Inventor before: Zheng Songhai Inventor before: Ding Li |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: XU BAOLIAN ZHENG SONGHAI DING LI TO: XU BAOLIAN ZHENG SONGHAI DING LI GAO GUANGLIANG LIU SHUAI CHEN HAO MA XIN |
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Granted publication date: 20140326 |
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