CN203503651U - 一种新型大功率led光源 - Google Patents

一种新型大功率led光源 Download PDF

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CN203503651U
CN203503651U CN201320416042.4U CN201320416042U CN203503651U CN 203503651 U CN203503651 U CN 203503651U CN 201320416042 U CN201320416042 U CN 201320416042U CN 203503651 U CN203503651 U CN 203503651U
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ceramic substrate
power led
high power
light source
led light
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CN201320416042.4U
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姚志图
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HUIZHOU WEIZHI ELECTRONICS CO Ltd
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HUIZHOU WEIZHI ELECTRONICS CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Abstract

本实用新型涉及一种新型大功率LED光源。现有的LED光源光效低、散热差、成本高。本实用新型由陶瓷基板、电子围坝胶、大功率LED芯片、荧光胶、硅胶、键合金线、高导热银浆和银浆构成。陶瓷基板为片状，其边沿处设置有安装孔，陶瓷基板上均匀分布设置有微细小孔，微细小孔内灌注有银浆，电子围坝胶设置在陶瓷基板上，与陶瓷基板构成整体；多个大功率LED芯片以品字型交错排列方式粘接在陶瓷基板上的电子围坝胶范围内，单颗LED功率为1W；键合金线线径为1.2mil，连接着大功率LED芯片电极以及陶瓷基板；荧光胶设于陶瓷基板上的大功率LED芯片表面，荧光胶的表面设有一层硅胶。装拆简易，安全、防水、节能、寿命长，利于推广。

Description

一种新型大功率LED光源
技术领域
本实用新型涉及电子照明技术领域，具体涉及一种新型大功率LED光源。 
背景技术
基板是LED光源散热的关键，光效是随着温度的增加而降低，基板的散热好坏，直接影响着LED灯的出光效率。目前常用的大功率LED光源集成封装方法一般是采用在铜或铝基板上注塑PPA形成灯杯，然后再在其上进行固晶、帮线、点胶、分光测试、包装等工艺，此封装方式存在光效低、散热差、成本高的缺点，产品的亮度与寿命无法得到保证，尤其在一些较为恶劣的环境更加无法推广使用。 
实用新型内容
本实用新型目的在于针对上述公知的大功率封装支架产生的不足之处及无法克服的缺点，结合 LED灯的特点，提供一种以陶瓷为基板材料、结构简单、光效高、散热效果好、寿命长、轻便的LED大功率光源。 
本实用新型由陶瓷基板、电子围坝胶、大功率LED 芯片、荧光胶、硅胶、键合金线、高导热银浆和银浆构成。陶瓷基板为片状，其边沿处设置有安装孔，陶瓷基板上均匀分布设置有微细小孔，微细小孔内灌注有银浆，电子围坝胶设置在陶瓷基板上，与陶瓷基板构成整体；多个大功率LED芯片以品字型交错排列方式粘接在陶瓷基板上的电子围坝胶范围内，单颗LED功率为1W；键合金线线径为1.2mil，连接着大功率LED 芯片电极以及陶瓷基板；荧光胶设于陶瓷基板上的大功率LED芯片表面，荧光胶的表面设有一层硅胶。 
本实用新型的有益效果是:采用集成COB形式作100W大功率封装，无需经SMT 组装及reflow的高温烘烤，直接可以使用；采用具有微细小孔的陶瓷作散热基板，微细小孔内并灌注银浆，使LED热量得以迅速传导到散热体以保证LED 的出光效率及使用寿命；LED大功率芯片以品字型交错方式排列并以高导热银浆烧结于陶瓷基板上，以达到出光效果佳、散热效果好的目的；采用激发效率较高的YAG系列荧光粉混合折射率为1.54的胶水，可使光源的发光光效达150lm/W。结构简单，散热效果好，光效高，寿命长，轻便、安全、环保，利于推广。 
附图说明
图1是本实用新型的整体结构示意图；
图2是本实用新型的各部件分解状态结构示意图；
图3是本实用新型LED芯片排列方式示意图；
图4是本实用新型的纵向剖面图。
图中1是陶瓷基板，2是电子围坝胶，3是荧光胶，4是硅胶，5是大功率LED 芯片，6是高导热银浆，7是银浆，8是键合金线，9是安装孔。 
具体实施方式
下面结合附图以最佳实施例对本实用新型做进一步详细说明：
本实用新型由陶瓷基板（1）、电子围坝胶（2）、大功率LED 芯片（5）、荧光胶（3）、硅胶（4）、键合金线（8）、高导热银浆（6）和银浆（7）构成，陶瓷基板（1）为片状，其边沿处设置有安装孔（9），陶瓷基板（1）上均匀分布设置有微细小孔，微细小孔内灌注有银浆（7），电子围坝胶（2）设置在陶瓷基板（1）上，与陶瓷基板（1）构成整体；多个大功率LED芯片（5）以品字型交错排列方式粘接在陶瓷基板（1）上的电子围坝胶（2）范围内，单颗LED功率为1W；键合金线（8）线径为1.2mil，连接着大功率LED 芯片（5）电极以及陶瓷基板（1）；荧光胶（3）设于陶瓷基板（1）上的大功率LED芯片（5）表面，荧光胶（3）的表面设有一层硅胶（4）。

Claims (3)

1.一种新型大功率LED光源，其特征在于它由陶瓷基板（1）、电子围坝胶（2）、大功率LED 芯片（5）、荧光胶（3）、硅胶（4）、键合金线（8）、高导热银浆（6）和银浆（7）构成，陶瓷基板（1）为片状，其边沿处设置有安装孔（9），陶瓷基板（1）上均匀分布设置有微细小孔，微细小孔内灌注有银浆（7），电子围坝胶（2）设置在陶瓷基板（1）上，与陶瓷基板（1）构成整体；多个大功率LED芯片（5）粘接在陶瓷基板（1）上的电子围坝胶（2）范围内；键合金线（8）连接着大功率LED 芯片（5）电极以及陶瓷基板（1）；荧光胶（3）设于陶瓷基板（1）上的大功率LED芯片（5）表面，荧光胶（3）的表面设有一层硅胶（4）。
2.根据权利要求1所述的一种新型大功率LED光源，其特征在于所述的大功率LED芯片（5）单颗功率为1W，以品字型交错排列方式排列在陶瓷基板（1）上。
3.根据权利要求1所述的一种新型大功率LED光源，其特征在于所述的键合金线（8）线径为1.2mil。
CN201320416042.4U 2013-07-12 2013-07-12 一种新型大功率led光源 Expired - Lifetime CN203503651U (zh)

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