CN203434165U - Solar battery sheet with electrode blocking-free front surface - Google Patents
Solar battery sheet with electrode blocking-free front surface Download PDFInfo
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- CN203434165U CN203434165U CN201320092227.4U CN201320092227U CN203434165U CN 203434165 U CN203434165 U CN 203434165U CN 201320092227 U CN201320092227 U CN 201320092227U CN 203434165 U CN203434165 U CN 203434165U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a solar battery sheet with an electrode blocking-free front surface and belongs to the solar battery preparation field. The solar battery sheet is structured through the following manners that: the front surface of a N type silicon substrate is provided with sintered P type silicon; the N type silicon substrate and the P type silicon form a PN junction; the surface of the P type silicon is coated with an ITO light-transmitting conductive film; and sides surfaces and the back surface of the N type silicon substrate are provided with lead-out electrodes formed through printing. According to the solar battery sheet of the utility model, the leading out of electrodes of the front-surface of the substrate is transferred to the back surface, such that the front surface of the solar battery sheet is not blocked by metal and connecting points, and therefore, the blocking of incident light caused by the electrodes can be decreased to the greatest extent, and the utilization efficiency of the battery can be improved, and at the same time, with coplanar electrodes at the back of the solar battery sheet adopted, the assembly and installation processes of the solar battery sheet can be simplified; and with high temperature sintering diffusion technology adopted, the light-transmitting conductive film, the PN junction of the solar battery, the front-surface printed electrodes, the side-surface printed electrodes and the back-surface printed electrodes can be formed with one step, and therefore, intermediate processes and unnecessary material consumption can be greatly reduced.
Description
Technical field
The utility model relates to solar battery sheet preparation field, particularly relates to the electrodeless solar battery sheet blocking in a kind of front.
Background technology
Solar cell is a kind of device that solar energy is converted to electric energy.Difference according to using material, is divided into silica-based solar cell, compound semiconductor solar cell and polymeric material battery etc.For silicon and compound semiconductor materials, by difference, adulterate and form PN junction.In general, PN junction can not surpass a μ m apart from semiconductor solar cell sheet surface.When irradiation is during at PN junction solar cell, the photon that is greater than semi-conducting material band gap can be absorbed, and at material internal, inspires free electron (hole), is again photo-generated carrier.If these electronics that are excited (hole) are just in time positioned in one, PN junction district diffusion length, in theory, the electric field of these electronics and inside, Jiang Bei PN junction district, hole separately, drifts to battery positive and negative electrode, and collected and form battery current by them, to external circuit, provide electric energy.
In fact, not all photo-generated carrier all can be collected, and forms effective photoelectric current.When photo-generated carrier is under the effect of PN junction district internal electric field, in the process of positive and negative electrode drift, the trap that the defect of material internal or impurity form can be captured these free carriers and be formed compound.This can, by improving material character, reduce defect and impurity content and reduce compound.Even without defect, cause compoundly, the length that free carrier moves in material or life-span are also limited, generally by average life span and average diffusion length, weigh.The free carrier of being collected knot two ends by PN junction internal electric field is before arriving the passive electrode contacting with semi-conducting material, exist by semi-conducting material and absorb compound probability, in semi-conducting material, the distance of free carrier motion is longer, is absorbed compound probability just larger.In order to improve the collection efficiency of solar cell, reduce electrode impedance, concerning the electrode of common metal material, the strong absorption characteristic of metal pair visible ray makes the PN junction below electrode become the inactive area on solar cell, the area that electrode covers is larger, inactive area is just more, and the whole efficiency of solar cell will reduce.Therefore, the front electrode of PN junction solar cell is all made grid-like.The physical dimensions such as the width of grid, spacing are all passed through strict optimization, electrode block and electrode impedance (carrier loss) between find a best balance point.
The appearance of transparent conductive material ITO and the application on solar cell, be resolved the problem of metal electrode shading light.Utilize ITO material to make front electrode, can be when effectively collecting photoelectric current, sunlight can see through electrode and enter PN junction district below, produce photoelectric current, hardly the photosurface size of solar cell is impacted, solar battery front side almost completely can become effective absorbing surface like this, but for battery is connected or battery is accessed to external circuit, also need to prepare metal electrode at some positions of battery front side, because ITO as a kind of semi-conducting material, is difficult to be connected with common metal wire in the mode of welding.Like this, still old small part photosurface is blocked by metal electrode.
Utility model content
The technical problems to be solved in the utility model is the positive electrodeless solar battery sheet blocking, and in solar battery sheet front, can not blocked by electrode, and the problem that affects photoelectric conversion efficiency is blocked in the solar battery sheet front that can solve preparation at present by electrode.
The technical scheme solving the problems of the technologies described above is as follows:
The utility model provides a kind of front the electrodeless solar battery sheet blocking, and this cell piece is:
In N-type silicon substrate front, be provided with the P type silicon of sintering, N-type silicon substrate and P type silicon form PN junction, and P type silicon face is coated with ITO transparency conducting film, and N-type silicon substrate side and the back side are provided with the extraction electrode that prints electrode and form.
The beneficial effects of the utility model are: block without any electrode completely in the front of this cell piece, can all be exposed under sunlight, thereby effectively improve the conversion efficiency of battery, make again syndeton and method between battery and battery or between battery and external circuit become more succinct, electrode fabrication cost reduction approximately 20%, improved production efficiency simultaneously; Adopt the disposable preparation that completes PN junction preparation, ITO transparency conducting film and electrode of technique of High temperature diffusion sintering, avoided a large amount of middle process link and raw-material wastes.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the utility model embodiment, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain other accompanying drawings according to these accompanying drawings.
The structural representation of the solar battery sheet that Fig. 1 provides for the utility model embodiment;
The cell piece stack schematic diagram of the making extraction electrode that Fig. 2 provides for the utility model embodiment.
In figure, each label name is called: 1-ITO transparency conducting film; 2-P type silicon; 3-N type silicon substrate; The copper electrode at the 4-back side or nickel electrode; The aluminium electrode at 5-side and the back side.
Embodiment
Below the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Based on embodiment of the present utility model, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to protection range of the present utility model.
The utility model embodiment provides a kind of front the electrodeless solar battery sheet blocking, as shown in Figure 1, this cell piece is: the P type silicon 2 that is provided with sintering in N-type silicon substrate 3 fronts, N-type silicon substrate and P type silicon form PN junction, P type silicon face is coated with ITO transparency conducting film 1, and N-type silicon substrate side and the back side are provided with the extraction electrode that prints electrode and form.
In above-mentioned solar battery sheet, ITO transparency conducting film, PN junction and extraction electrode are by High temperature diffusion sintering and print electrode mode one time to produce on N-type silicon substrate.
Wherein, ITO transparency conducting film is: indium oxide, tin oxide are mixed to form to mixture according to the part by weight of 9:1, by one of the percentage that accounts for described mixture, the minute quantity boron oxide to millesimal part by weight mixes after said mixture again, make target or evaporation material, adopt sputter or electron beam evaporation on described N-type silicon substrate, to prepare the ito thin film of the boron oxide-doping forming.The thickness of ITO transparency conducting film is: 64～69nm.
In above-mentioned solar battery sheet, extraction electrode comprises: P type silicon contact electrode and N-type silicon contact electrode;
Wherein, P type silicon contact electrode is the aluminium electrode in N-type silicon substrate side and back portion region surface printing formation; N-type silicon contact electrode is copper electrode or the nickel electrode forming at N-type silicon substrate back side remaining area surface printing.P type silicon contact electrode and N-type silicon contact electrode form coplanar electrodes at the N-type silicon substrate back side.
In above-mentioned solar battery sheet, it is n type single crystal silicon substrate or the N-type multicrystalline silicon substrate of 300 Ω cm that N-type silicon substrate can adopt resistivity.
The solar battery sheet of said structure, block without metal and tie point completely in its front, can all be exposed under sunlight, thereby effectively improve the conversion efficiency of battery, make again syndeton and method between battery and battery or between battery and external circuit become more succinct, electrode fabrication cost reduction approximately 20%, improved production efficiency simultaneously; Adopt the disposable preparation that completes PN junction preparation, ITO transparency conducting film and electrode of technique of High temperature diffusion sintering, avoided a large amount of middle process link and raw-material wastes.
The utility model embodiment also provides a kind of preparation method of above-mentioned solar battery sheet, comprises the following steps:
Take N-type silicon as substrate, N-type silicon substrate is cleaned up;
Ito thin film in the positive preparation of described N-type silicon substrate doped with boron oxide;
With mode of printing, at the described N-type silicon substrate back side and side, form extraction electrode;
Described N-type silicon substrate after above-mentioned processing is carried out to High temperature diffusion sintering; controlling temperature is 800 ℃～1000 ℃; in sintering process, pass into inert gas protection; until obtain at positive PN junction and the ITO transparent conductive film of forming of N-type silicon substrate, at the solar battery sheet of N-type silicon substrate side and back side formation extraction electrode.
In said method, at the positive ito thin film of preparing doped with boron oxide of N-type silicon substrate, be:
Indium oxide, tin oxide are mixed to form to mixture according to the part by weight of 9:1, by one of the percentage that accounts for described mixture, the minute quantity boron oxide to millesimal part by weight mixes after said mixture again, make target or evaporation material, adopt sputter or electron beam evaporation in the positive preparation of described N-type silicon substrate, to form the ito thin film of boron oxide-doping, ito thin film thickness is 64～69nm.
In said method, specific as follows at the described N-type silicon substrate back side and side formation extraction electrode with mode of printing:
With mode of printing, at the described N-type silicon substrate back side and side coating aluminium paste, the described N-type silicon substrate after coating aluminium paste is toasted at 80 ℃, aluminium paste is solidified as P type silicon contact electrode;
With mode of printing, at described N-type silicon substrate back side remaining area coating nickel slurry or copper slurry, be then placed in baking oven and carry out 80 ℃ of bakings, slurry is solidified as N-type silicon contact electrode.
P type silicon contact electrode and N-type silicon contact electrode at the N-type silicon substrate back side are coplanar electrodes.
The above-mentioned mode of printing of using, at the described N-type silicon substrate back side and side coating aluminium paste, toasts the described N-type silicon substrate after coating aluminium paste at 80 ℃, aluminium paste is solidified as P type silicon contact electrode and specifically can adopt following manner:
Upwards staggered to superpose along a direction in the N-type silicon substrate back side of a plurality of cell pieces and put together (see figure 2), make N-type silicon substrate be provided with the face down of ITO transparency conducting film, with mode of printing, at the described N-type silicon substrate back side and side, be coated with aluminium paste, again the described N-type silicon substrate after coating aluminium paste is toasted at 80 ℃, make aluminium paste solidify the P type silicon contact electrode as each cell piece.
Below in conjunction with concrete preparation process, said method is described further, step is as follows:
Step 1, selects N-type (resistivity approximately 300 Ω cm) monocrystalline or multicrystalline silicon substrate, carries out routine and cleans rear standby;
Step 2, the adulterated ito thin film of boron oxide of preparation on substrate, THICKNESS CONTROL is at 64～69nm;
Step 3, puts together cell piece stack according to the mode of Fig. 2, and the one side making progress is the back side (N-type silicon substrate), downward one side is ito thin film, with mode of printing, be coated with aluminium paste with side overleaf, be then placed in baking oven and carry out 80 ℃ of bakings, slurry is solidified;
Step 5; N-type silicon chip after above-mentioned processing is put into chain-conveyer furnace and carry out High temperature diffusion sintering; temperature is controlled at 800～1000 ℃; pass into inert gas protection therebetween, because the fusing point of boron oxide is lower, will make indium oxide and tin oxide sintering form transparent conductive film ITO; simultaneously; will there is diffusion and formation PN junction in boron ion, prepared by the electrode that simultaneously completes side, the back side, form cross-section structure solar battery sheet as shown in Figure 2 in N-type silicon.
Solar battery sheet of the present utility model, light absorption face in N-type silicon substrate front, complete electrodeless blocking, front electrode is printed electrode and is directly guided to the back side by side, form coplanar electrodes, PN junction, ITO transparent conducting thin film, front electrode, side electrode and backplate is once sintered completes, improved conversion efficiency of solar cell and reduced again middle process link and raw-material consumption simultaneously, reduced production cost.
The above; it is only preferably embodiment of the utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; the variation that can expect easily or replacement, within all should being encompassed in protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of claims.
Claims (6)
1. the electrodeless solar battery sheet blocking in front, is characterized in that, this cell piece is:
In N-type silicon substrate front, be provided with the P type silicon of sintering, N-type silicon substrate and P type silicon form PN junction, and P type silicon face is coated with ITO transparency conducting film, and N-type silicon substrate side and the back side are provided with the extraction electrode that prints electrode and form.
2. solar battery sheet according to claim 1, is characterized in that, described ITO transparency conducting film, PN junction and extraction electrode are by High temperature diffusion sintering and print electrode mode one time to produce on described N-type silicon substrate.
3. according to the solar battery sheet described in claim 1～2 any one, it is characterized in that, the thickness of described ITO transparency conducting film is: 64～69nm.
4. solar battery sheet according to claim 1 and 2, is characterized in that, described extraction electrode comprises: P type silicon contact electrode and N-type silicon contact electrode; Wherein,
Described P type silicon contact electrode is the aluminium electrode in N-type silicon substrate side and back portion region surface printing formation; Described N-type silicon contact electrode is copper electrode or the nickel electrode forming at N-type silicon substrate back side remaining area surface printing.
5. solar battery sheet according to claim 4, is characterized in that, described P type silicon contact electrode and N-type silicon contact electrode form coplanar electrodes at the N-type silicon substrate back side.
6. solar battery sheet according to claim 1, is characterized in that, it is n type single crystal silicon substrate or the N-type multicrystalline silicon substrate of 300 Ω cm that described N-type silicon substrate adopts resistivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320092227.4U CN203434165U (en) | 2013-02-28 | 2013-02-28 | Solar battery sheet with electrode blocking-free front surface |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320092227.4U CN203434165U (en) | 2013-02-28 | 2013-02-28 | Solar battery sheet with electrode blocking-free front surface |
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| CN203434165U true CN203434165U (en) | 2014-02-12 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117313A (en) * | 2013-02-28 | 2013-05-22 | 宏大中源太阳能股份有限公司 | Solar cell with front side free of electrode shielding and preparation method thereof |
| CN109362217A (en) * | 2018-09-30 | 2019-02-19 | 联想(北京)有限公司 | Electronic equipment and electronic equipment processing method |
| CN112466965A (en) * | 2020-11-19 | 2021-03-09 | 晶科绿能(上海)管理有限公司 | Back contact solar cell piece with extension electrode and solar cell module |
| CN112820785A (en) * | 2020-12-28 | 2021-05-18 | 中山德华芯片技术有限公司 | Solar cell chip and manufacturing method thereof |
-
2013
- 2013-02-28 CN CN201320092227.4U patent/CN203434165U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117313A (en) * | 2013-02-28 | 2013-05-22 | 宏大中源太阳能股份有限公司 | Solar cell with front side free of electrode shielding and preparation method thereof |
| CN103117313B (en) * | 2013-02-28 | 2015-07-01 | 宏大中源太阳能股份有限公司 | Solar cell with front side free of electrode shielding and preparation method thereof |
| CN109362217A (en) * | 2018-09-30 | 2019-02-19 | 联想(北京)有限公司 | Electronic equipment and electronic equipment processing method |
| CN112466965A (en) * | 2020-11-19 | 2021-03-09 | 晶科绿能(上海)管理有限公司 | Back contact solar cell piece with extension electrode and solar cell module |
| CN112466965B (en) * | 2020-11-19 | 2022-06-03 | 晶科绿能(上海)管理有限公司 | Back contact solar cell piece with extension electrode and solar cell module |
| US11380807B2 (en) | 2020-11-19 | 2022-07-05 | Jinko Green Energy (shanghai) Management Co., Ltd. | Back-contact solar cell and solar cell module including same |
| CN112820785A (en) * | 2020-12-28 | 2021-05-18 | 中山德华芯片技术有限公司 | Solar cell chip and manufacturing method thereof |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140212 Termination date: 20170228 |
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| CF01 | Termination of patent right due to non-payment of annual fee |