CN203434160U - Large-area silicon bypass diode for solar cell array - Google Patents
Large-area silicon bypass diode for solar cell array Download PDFInfo
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- CN203434160U CN203434160U CN201320436633.8U CN201320436633U CN203434160U CN 203434160 U CN203434160 U CN 203434160U CN 201320436633 U CN201320436633 U CN 201320436633U CN 203434160 U CN203434160 U CN 203434160U
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Abstract
The utility model relates to a large-area silicon bypass diode for solar cell array, including a triangular P type silicon substrate, a phosphorus diffusion layer and a top electrode distributing in top-down style over the silicon substrate, a boron diffusion layer and a lower electrode distributing in top-down style under the silicon substrate, an oxidation ring distributing in the silicon substrate around the phosphorus diffusion layer. The utility model is characterized in that a P+ boron isolating ring is made between the oxidation ring and the silicon substrate, the top electrode is a Ti-Pd-Ag top electrode system and the lower electrode is a A1-Ti-Pd-Ag lower electrode system. The utility model drastically increases the tension resistance of the electrode and enhances the electrode fastness using the Ti-Pd-Ag top electrode system and the A1-Ti-Pd-Ag lower electrode system and is characterized by non-deforming and non-shedding. An object of isolating reverse leakage current is achieved by the P+ boron isolating ring under the protection of the oxidation ring, and the reverse leakage current is controlled less than 1 microamp, which is characterized by high reliability and good stability.
Description
Technical field
The utility model belongs to diode technologies field, particularly relates to a kind of solar battery array bulk silicon bypass diode.
Background technology
In order to prevent that solar cell is because hot spot effect wrecks, a bypass diode in parallel between the both positive and negative polarity of solar module conventionally, the assembly being masked with the energy of avoiding illumination assembly to be produced consumes.Its application principle is when cell piece occurs that hot spot effect can not generate electricity, play the diode of bypass effect, the electric current that allows other cell piece produce flows out from diode, makes solar power system continue generating, can not go wrong and produce the obstructed situation of electricity-generating circuit because of certain a slice cell piece.When cell piece works, bypass diode oppositely ends, and circuit is not produced to any effect; If while there is the cell piece of a non-normal working in the cell piece group in parallel with bypass diode, whole line current will be determined by minimum current cell piece, and size of current is determined by cell piece dead area, if reverse bias is during higher than cell piece minimum voltage, bypass diode conducting, now, non-normal working cell piece is by short circuit.Therefore, for solar battery array, bypass diode is essential, and its effect is very crucial.Along with continuing to increase of solar cell chip size, the small size bypass diode of conventional 3mm * 3mm size, has been not suitable with the solar cell demand that unfilled corner area size is larger.
Conventionally, the electrode of large area bypass diode adopts aluminium-gold electrode system mostly, and aluminium forms good contacting with diode, then by methods such as spot welding or ball bondings, spun gold or aluminium wire is connected to extraction electrode with solder joint.But chemical reaction easily occurs aluminium electrode in a humid environment, cause aluminium electrode corrosion to cause diode output electric property to decline so that complete failure.
Current known bulk silicon bypass diode, the argent that its upper and lower surface has electric conductivity and good weldability by welding is as electrode material, the diode fails of having avoided electrode corrosion to cause.But because argent and silicon do not have good tack, cause the stretching resistance poor performance of diode electrode, firmness is low; And reverse leakage current is relatively large, for reducing reverse leakage current, between the upper/lower electrode of diode, fixedly one deck oxidation encircles, although reverse leakage current reduces to some extent, but be still greater than 1 μ A, reduced the reliability and stability that diode is applied in solar battery array.
Summary of the invention
A kind of electrode Tensile strength is good, firmness is high for the technical problem existing in solution known technology provides for the utility model, and reverse leakage current is less than 1 μ A, and reliability is high, the solar battery array of good stability bulk silicon bypass diode.
The utility model, for solving the technical problem existing in known technology, adopts following technical scheme:
Solar battery array bulk silicon bypass diode, comprise triangle P type silicon substrate, above substrate, there are from bottom to top phosphorus-diffused layer and top electrode, below substrate, there are from top to bottom diffused layer of boron and bottom electrode, phosphorus-diffused layer substrate around has oxidation ring, is characterized in: between described oxidation ring and substrate, be shaped with P+ boron shading ring; The described very Ti-Pd-Ag upper electrode system that powers on; Described bottom electrode is Al-Ti-Pd-Ag bottom electrode system.
The utility model can also adopt following technical measures:
Described diffused layer of boron is the heavily doped layer of p+ boron; Described phosphorus-diffused layer is the heavily doped layer of n+ phosphorus.
Described Ti-Pd-Ag upper electrode system consists of top electrode Ti layer, top electrode Pd layer and the top electrode Ag layer of evaporation on diffused layer of boron successively.
Described Al-Ti-Pd-Ag bottom electrode system consists of bottom electrode Al layer, bottom electrode Ti layer, bottom electrode Pd layer and the bottom electrode Ag layer of evaporation in phosphorus-diffused layer successively.
Advantage and the good effect that the utlity model has are:
1, the utility model adopts Ti-Pd-Ag upper electrode system and Al-Ti-Pd-Ag bottom electrode system, has significantly improved the Tensile strength of electrode, has strengthened the firmness of electrode, has indeformable, the adeciduate feature of electrode.
2, the utility model has adopted the P+ boron shading ring under ring protection in oxidation, because the diffusion of P+ boron shading ring makes isolation channel become P
+district, this P
+district forms P/N knot with the n type material of bottom on the one hand, utilizes semi-conductive photovoltaic effect to produce photovoltage; On the other hand, P
+form P/N knot with N-type region around again, reach the object of isolation reverse leakage current, make reverse leakage current be less than 1 μ A.
3, the utlity model has that reliability is high, the feature of good stability, can meet the needs of large-area solar cell battle array.
Accompanying drawing explanation
Fig. 1 is that the master of the utility model diode looks generalized section;
To be the utility model diode analyse and observe schematic top plan view as A-A layer in Fig. 1 to Fig. 2.
In figure, 1-top electrode Ag layer, 2-top electrode Pd layer, 3-top electrode Ti layer, the heavily doped layer of 4-n+ phosphorus, 5-substrate, the heavily doped layer of 6-p+ boron, 7-bottom electrode Al layer, 8-bottom electrode Ti layer, 9-bottom electrode Pd layer, 10-bottom electrode Ag layer, 11-is oxidized ring, 12-P+ boron shading ring.
Embodiment
For further understanding summary of the invention of the present utility model, Characteristic, hereby exemplify following examples, and coordinate accompanying drawing to be described in detail as follows:
Solar battery array bulk silicon bypass diode, comprises triangle P type silicon substrate, has from bottom to top phosphorus-diffused layer and top electrode above substrate, has from top to bottom diffused layer of boron and bottom electrode below substrate, and phosphorus-diffused layer substrate around has oxidation ring;
Innovative point of the present utility model is:
Between described oxidation ring and substrate, be shaped with P+ boron shading ring; The described very Ti-Pd-Ag upper electrode system that powers on; Described bottom electrode is Al-Ti-Pd-Ag bottom electrode system; Described diffused layer of boron is the heavily doped layer of p+ boron; Described phosphorus-diffused layer is the heavily doped layer of n+ phosphorus; Described Ti-Pd-Ag upper electrode system consists of top electrode Ti layer, top electrode Pd layer and the top electrode Ag layer of evaporation on diffused layer of boron successively; Described Al-Ti-Pd-Ag bottom electrode system consists of bottom electrode Al layer, bottom electrode Ti layer, bottom electrode Pd layer and the bottom electrode Ag layer of evaporation in phosphorus-diffused layer successively.
Manufacturing process of the present utility model:
First, right-angle side is greater than to the right angle trigonometry shape P type silicon chip single-sided polishing of 10.9mm * 10.9mm, make crystal orientation <100>, resistivity 2 Ω cm ± 1 Ω cm, the silicon chip of thickness 0.13m ± 0.03mm type, as the substrate 5 shown in Fig. 1 and Fig. 2, then carries out production according to the following steps successively:
Step 1, making isolation channel
(1) be oxidized substrate burnishing surface:
When heating up in oxidation furnace, with the speed of 1900-2000mL/min, in oxidation furnace, lead to dry oxygen, when temperature rises to 700 ℃, in oxidation furnace, be full of oxygen; The burnishing surface of substrate is put into oxidation quartz boat upward, oxidation quartz boat is placed in to oxidation fire door, preheating 5-10min, again oxidation quartz boat is pushed to the flat-temperature zone of oxidation furnace, oxidation furnace heating, when in quartz boat, substrate temperature reaches 1015-1025 ℃, by oxygen gas flowmeter, control oxygen feeding amount, speed with 1800-1850mL/min, first logical dry oxygen 10min, wet oxygen 58min of the flat-temperature zone of backward oxidation furnace, dry oxygen 10min, lower the temperature to the flat-temperature zone of oxidation furnace, when underlayer temperature is down to 400 ℃, take out substrate, substrate burnishing surface surface forms oxide layer; This oxide layer plays masking film, when postorder carries out boron diffusion, and the heavily doped layer of protection n+ phosphorus diffusingsurface;
(2) photoetching isolation channel:
Substrate is placed on sol evenning machine, in the oxide layer (1) completing, after hand coatings BP218 photoresist, with 3000rpm, carries out even glue 15s-20s, above oxide layer, form the thick photoresist of 3.5 μ m ± 0.5 μ m; Then substrate is placed in to TR baking oven and carries out 90 ℃ of oven dry, by reticle, on photoresist, carve the figure of isolation channel; According to figure, by photoetching machine engraving eating away photoresist and oxide layer, the edge of substrate polishing surface layer forms the wide substrate exposed surface of a circle 0.2mm, and this exposed surface diffuses to form the isolation channel of P+ boron shading ring as boron;
Step 2, boron diffusion
(1) remove the non-light face oxide layer of cuing open of substrate
The non-light face that cuts open of substrate is put into the HF buffer solution 3-4min of 35-45 ℃, erode the non-light face oxide layer of cuing open, take out and dry, then be placed in acetone, take out and rinse well, dry with deionized water, the non-light that cuts open of substrate forms silicon exposed surface;
(2) boron diffusion
Substrate and boron sheet after (1) step 2 is completed are placed in quartz boat, non-silicon exposed surface and the isolation channel that cuts open light formation of substrate is close to boron sheet as expanding boron face, quartz boat is put into diffusion furnace, open diffusion furnace heating power supply, treat that in diffusion furnace, temperature rises to 920 ℃-930 ℃, with 2000-2500mL/min flow, in diffusion furnace, be filled with nitrogen, the expansion boron face of substrate is carried out to the diffusion of 40-45min boron; Close diffusion furnace heating power supply, nitrogen is changed as oxygen, and the flow of controlling oxygen is 1900-2100mL/min, after being down to 500 ℃, temperature in diffusion furnace takes out substrate, and substrate non-cuts open that light face diffuses out the heavily doped layer 6 of p+ boron, substrate isolation groove diffuses out P+ boron shading ring 12;
Step 3, making oxidation ring
(1) the substrate two heavily doped aspect of p+ boron opposites being sticked together is to insert in oxidation quartz boat, oxidation quartz boat is placed in oxidation fire door, preheating 5-10min, oxidation quartz boat is pushed to the flat-temperature zone of oxidation furnace, substrate is carried out to 1015-1025 ℃, the oxidation of 70min, between the heat of oxidation, the dry oxygen flow in oxidation furnace remains on 800-1200mL/min; After oxidation, keep oxidation furnace temperature, the dry oxygen passing into is changed into and passes into the argon gas that flow is 800-1200mL/min; Close heating, continue to pass into argon gas, be naturally cooled to 700 ℃ following after, oxidization boat is moved to fire door, the P+ boron shading ring that substrate diffuses out is oxidized;
(2) the heavily doped aspect of p+ boron of substrate is placed on sol evenning machine, substrate another side hand coatings BP218 photoresist, sol evenning machine speed setting, at 3000rpm, carries out the even glue of 15-20s;
(3) the substrate after even glue is placed in to TR baking oven and carries out 90 ℃ of oven dry;
(4) the P+ boron shading ring inner ring of take is boundary, carves the figure of phosphorus diffusingsurface by reticle on photoresist, and the oxide layer that etches away phosphorus diffusingsurface figure forms silicon exposed surface, and the oxide layer being retained on P+ boron shading ring is oxidation ring 11;
Step 4, phosphorus diffusion:
Outwardly, the heavily doped laminating of p+ boron of two substrates together, is put into diffusing quartz boat to the silicon exposed surface that step 3 is formed, and quartz boat is put into and is filled with diluent nitrogen N
22 diffusion furnace fire door, when diffusion furnace flat-temperature zone is heated to 820 ℃, by quartz boat be placed with POCl
3the open containers of liquid pushes diffusion furnace flat-temperature zone, keeps 15-20min, to be filled with the source of the taking nitrogen N of 500-600mL/min flow to flat-temperature zone
21 and the reaction oxygen O of 250-mL/min flow
2, POCl
3silicon exposed surface is carried out to the phosphorus diffusion of 22-30min; Stop being filled with N
21 and O
2, transfer the diluent nitrogen N of the 2000-3000mL/min flow that is filled with 5-10min to
22, take out substrate, the heavily doped layer 4 of the exposed upper formation one deck n+ phosphorus of silicon, this layer realized the N-type diffusion in diode PN junction structure;
Step 5, evaporation upper electrode system:
The heavily doped aspect of n+ phosphorus of substrate is blocked towards being placed down on mould; Titanium, palladium, silverskin material that clean is good are put into respectively to crucible, and mould and crucible are all put into the high vacuum coating unit vacuum chamber that has electrode evaporation process, and the initial vacuum degree of vacuum chamber is not less than 3 * 10
-4pa, the speed that top electrode evaporation process is set as Ti is
the speed of Pd is
the speed of Ag is
after vacuumizing, start the top electrode evaporation process in high vacuum coating unit, on the heavily doped layer of n+ phosphorus, evaporation thickness is successively automatically
top electrode Ti layer 3,
top electrode Pd layer 2 He
top electrode Ag layer 1, form Ti-Pd-Ag upper electrode system;
Step 6, evaporation bottom electrode system:
The heavily doped aspect of p+ boron of substrate is blocked towards being placed down on mould; Aluminium, titanium, palladium, silverskin material that clean is good are put into respectively to crucible, and mould and crucible are all put into the high vacuum coating unit vacuum chamber that has electrode evaporation process, and the initial vacuum degree of vacuum chamber is not less than 2 * 10
-4pa, the speed that bottom electrode evaporation process is set as Al is
the speed of Ti is
the speed of Pd is
the speed of Ag is
after vacuumizing, start the bottom electrode evaporation process in high vacuum coating unit, on the heavily doped layer of p+ boron, evaporation thickness is successively automatically
bottom electrode Al layer 7,
bottom electrode Ti layer 8,
bottom electrode Pd layer 9 He
bottom electrode Ag layer 10, form Al-Ti-Pd-Ag bottom electrode system; Make the semi-finished product of bulk silicon bypass diode as shown in Figure 1;
Step 7, scribing:
Finally use automatic sand-wheel slice cutting machine, the semi-finished product of bulk silicon bypass diode are carried out to scribing, complete the manufacturing process of the triangle bulk silicon bypass diode that two right-angle sides are 10.9mm * 10.9mm as shown in Figure 2.
Operation principle:
1, the employing of the utility model diode is N-type doping with the heavily doped layer of n+ phosphorus of top electrode contact-making surface, and because N-type doping can not directly contact with aluminium, so upper electrode system has adopted Ti-Pd-Ag structure; Ti-Pd-Ag structure is to utilize three-layer metal feature separately to realize its high reliability, and Titanium has good tack to the silicon of N-type doping, can form ohmic contact and can high strength be connected with silicon; Metal Palladium chemical property utmost point torpescence, plays passivation, and inner layer metal is shielded; Argent electric conductivity is superior, and has good solderability, can be easy to realize and outside being electrically connected to.And with the heavily doped layer of the p+ boron of bottom electrode contact-making surface be the doping of P type, because aluminium belongs to P-type material, there is good contacting with the heavily doped layer of p+ boron, so bottom electrode has adopted ideal Al-Ti-Pd-Ag electrode system.Through 83N/cm
2, the test of 45 ° of stretching resistances, electrode is indeformable, do not come off; Known solar battery array is carried out to 5N/cm with bulk silicon bypass diode
2, 45 ° of stretching resistance tests, electrode produces distortion and even comes off; Experiment showed, the electrode system that the utility model adopts Ti-Pd-Ag and Al-Ti-Pd-Ag to form, significantly improved Tensile strength and the firmness of electrode, greatly strengthened the reliability and stability that the utility model is made product.
2, the utility model has adopted below oxidation ring increases P
+the mode of boron shading ring, because boron diffusion makes isolation channel become P
+district, this P
+district forms P/N knot with the n type material of bottom on the one hand, utilizes semi-conductive photovoltaic effect to produce photovoltage; On the other hand, P
+form P/N knot with N-type region around again, reach the object of isolation reverse leakage current, after tested, add under the condition that reverse voltage is 4V, the diode reverse leakage current of making is less than 1 μ A, is much better than simple the effective of oxidation ring isolation edge electric leakage of using.
Although by reference to the accompanying drawings preferred embodiment of the present utility model is described above; but the utility model is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present utility model; not departing from the scope situation that the utility model aim and claim protect, can also make a lot of forms, within these all belong to protection range of the present utility model.
Claims (4)
1. solar battery array bulk silicon bypass diode, comprise triangle P type silicon substrate, above substrate, there are from bottom to top phosphorus-diffused layer and top electrode, below substrate, there are from top to bottom diffused layer of boron and bottom electrode, phosphorus-diffused layer substrate around has oxidation ring, it is characterized in that: between described oxidation ring and substrate, be shaped with P+ boron shading ring; The described very Ti-Pd-Ag upper electrode system that powers on; Described bottom electrode is Al-Ti-Pd-Ag bottom electrode system.
2. solar battery array according to claim 1 bulk silicon bypass diode, is characterized in that: described diffused layer of boron is the heavily doped layer of p+ boron; Described phosphorus-diffused layer is the heavily doped layer of n+ phosphorus.
3. solar battery array according to claim 1 and 2 bulk silicon bypass diode, is characterized in that: described Ti-Pd-Ag upper electrode system consists of top electrode Ti layer, top electrode Pd layer and the top electrode Ag layer of evaporation on diffused layer of boron successively.
4. solar battery array according to claim 1 and 2 bulk silicon bypass diode, is characterized in that: described Al-Ti-Pd-Ag bottom electrode system consists of bottom electrode Al layer, bottom electrode Ti layer, bottom electrode Pd layer and the bottom electrode Ag layer of evaporation in phosphorus-diffused layer successively.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320436633.8U CN203434160U (en) | 2013-07-22 | 2013-07-22 | Large-area silicon bypass diode for solar cell array |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320436633.8U CN203434160U (en) | 2013-07-22 | 2013-07-22 | Large-area silicon bypass diode for solar cell array |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742167A (en) * | 2014-12-08 | 2016-07-06 | 天津恒电空间电源有限公司 | Preparation method of multilayer metal electrode capable of being firmly combined with glass |
| CN105741915A (en) * | 2014-12-08 | 2016-07-06 | 天津恒电空间电源有限公司 | Multilayer metal electrode capable of being firmly combined with glass |
| CN105762213A (en) * | 2014-12-19 | 2016-07-13 | 天津恒电空间电源有限公司 | Silicon solar cell integrated with bypass diode and preparation method of silicon solar cell |
| CN105789034A (en) * | 2014-12-19 | 2016-07-20 | 天津恒电空间电源有限公司 | Preparing method of top electrode of bypass diode |
-
2013
- 2013-07-22 CN CN201320436633.8U patent/CN203434160U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742167A (en) * | 2014-12-08 | 2016-07-06 | 天津恒电空间电源有限公司 | Preparation method of multilayer metal electrode capable of being firmly combined with glass |
| CN105741915A (en) * | 2014-12-08 | 2016-07-06 | 天津恒电空间电源有限公司 | Multilayer metal electrode capable of being firmly combined with glass |
| CN105762213A (en) * | 2014-12-19 | 2016-07-13 | 天津恒电空间电源有限公司 | Silicon solar cell integrated with bypass diode and preparation method of silicon solar cell |
| CN105789034A (en) * | 2014-12-19 | 2016-07-20 | 天津恒电空间电源有限公司 | Preparing method of top electrode of bypass diode |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140212 Termination date: 20170722 |