CN105742375B - A kind of back contacts crystal silicon battery and preparation method thereof - Google Patents
A kind of back contacts crystal silicon battery and preparation method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 98
- 239000010703 silicon Substances 0.000 title claims abstract description 98
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000002161 passivation Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 27
- 238000009413 insulation Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 6
- 229920001169 thermoplastic Polymers 0.000 claims description 6
- 239000004416 thermosoftening plastic Substances 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 3
- 210000004209 hair Anatomy 0.000 claims description 3
- 230000011218 segmentation Effects 0.000 claims 1
- 239000002585 base Substances 0.000 description 97
- 239000010410 layer Substances 0.000 description 45
- 238000010586 diagram Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- -1 poly terephthalic acid Glycol ester Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- DYAHQFWOVKZOOW-UHFFFAOYSA-N Sarin Chemical compound CC(C)OP(C)(F)=O DYAHQFWOVKZOOW-UHFFFAOYSA-N 0.000 description 1
- 229920003182 Surlyn® Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-N benzene-dicarboxylic acid Natural products OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of back contacts crystal silicon battery and preparation method thereof, including silicon wafer substrate and it is arranged at emitter stage, base stage, emitter electrode and the base electrode at the silicon wafer substrate back side, emitter electrode and base electrode are correspondingly formed Ohmic contact with emitter stage and base stage respectively, the back side of silicon wafer substrate is divided into multiple independent repeat units, and emitter stage is in be spaced apart in each repeat unit with base stage；The emitter stage busbar electrically connected with each emitter electrode is provided with one end of each repeat unit, its other end is provided between the base stage busbar electrically connected with each base electrode, adjacent two repeat unit realizes interconnection by base stage busbar, emitter stage busbar；Present invention also offers the preparation method of above-mentioned back contacts crystal silicon battery, by the way that silicon wafer substrate is divided into multiple independent repeat units, then pass through the connection between busbar, realize the interconnection between each repeat unit, the length of electrode is shortened, power loss is reduced, the reliability of battery is improved.
Description
Technical field
The present invention relates to crystal silicon solar batteries technical field, and in particular to a kind of back contacts crystal silicon battery and its preparation side
Method.
Background technology
Traditional crystal silicon battery emitter stage contact electrode and base stage contact electrode is produced in front and the back of the body of cell piece
The metal grid lines of face, wherein emitter stage contact electrode are to be produced on the front exposed to sunlight, therefore the part surface of battery
Covered by metal, can not be participated in absorbing incident sunshine by this plated area, cause a part of optical loss.
And the application of back contacts technology can increase light-receiving area, increase light absorbs, so as to improve battery efficiency.Existing back contacts technology
Mainly there is the metal piercing back of the body around technology (MWT), the emitter stage perforation back of the body is around technology (EWT), emitter stage passivation back contacts technology
(PERC, PERL), staggeredly back contacts technology (IBC).The IBC batteries of wherein Sunpower companies are current volume production efficiency highests
Battery, its volume production battery efficiency can reach 24%.The preparation method of Sunpower companies is the condition protected in etch layer
The method of lower use thermal diffusion doping, is initially formed the emitter stage and base stage of patterning.Due to needing coating, the photoetching of introducing mask
With the removal of mask, thermal diffusion doping needs to remove silicate, and manufacturing process steps are cumbersome, complexity, so that cost is higher.And
With the expansion of wafer size, backplate grid line length needs are elongated, and the gate electrode line in whole face will cause serious power
Loss, declines the efficiency of cell piece.
For general take of encapsulation of back contacts crystal silicon battery patterned gold will be connected or used from the back side of battery
Category backboard realizes the interconnection of battery.Because monocrystalline silicon battery typically has fillet, when forming component, battery can not be covered all
The surface of component, it is impossible to make full use of the smooth surface of component.In addition, the interconnection between battery also makes component without flexibility.
The content of the invention
Therefore, the present invention is solved because wafer size expands, the cell piece effect caused by backplate grid line length
Rate degradation problem, simplifies cell making process step, the invention provides a kind of back contacts crystal silicon battery and its preparation side
Method.
Used technical scheme is as described below：
On the one hand, the invention provides a kind of back contacts crystal silicon battery, including silicon wafer substrate and it is arranged at the silicon chip base
Emitter stage, base stage, emitter electrode and the base electrode of back, the emitter electrode and base electrode respectively with the hair
Emitter-base bandgap grading and the base stage are correspondingly formed Ohmic contact, and the back side of the silicon wafer substrate is divided into multiple independent repeat units, institute
It is in be spaced apart in each repeat unit that emitter stage, which is stated, with the base stage；It is provided with one end of each repeat unit
The emitter stage busbar electrically connected with emitter electrode each described, its other end is provided with and electrically connected with base electrode each described
Base stage busbar, pass through described base stage busbar, emitter stage busbar between repeat unit described in adjacent two and realize interconnection.
It is equipped with described emitter stage and the outer surface of base stage on passivation layer or oxide layer, the passivation layer or oxide layer
The opening being connected with described emitter stage and base stage is formed, described emitter electrode and base electrode may be contained within described
Be open interior and connection corresponding with described emitter stage and base stage respectively.
Described base electrode and the separated of emitter electrode and the structure of formation interdigitated, the grid line of emitter electrode
Width is more than or equal to the grid line width of the base electrode.
A width of 100~200 μm of the grid line of described emitter electrode, a width of 50~100 μm of the grid line of base electrode, transmitting
The width of pole busbar and base stage busbar is 0.5~1mm.
The flexible interconnection device that the silicon wafer substrate is used to electrically connect the repeat unit provided with least one, adjacent two
The repeat unit realizes the connection in series-parallel between repeat unit described in two by the flexible interconnection device.
Described flexible interconnection device includes flexible support substrate, conductive connecting strap and flexible insulation band, and the conduction is even
Tape splicing is arranged on the flexible support substrate, and the flexible insulation band is arranged at described be conductively connected and taken, described flexible exhausted
Marginal zone is arranged between the emitter stage busbar of repeat unit described in two and/or base stage busbar, and the conductive connecting strap point
Do not electrically connected with the emitter stage busbar and/or base stage busbar of repeat unit described in two.
Described support substrate is the composite construction of thermoplastic layer and fexible film；The thickness of the fexible film be 10~
100 μm, the thickness of the thermoplastic layer is 10~100 μm, and the thickness of the conductive connecting strap and insulating tape is 1~50 μm.
The front of the silicon wafer substrate, which is additionally provided with shallow doped region, the shallow doped region, forms front surface electric field.
On the other hand, present invention also offers a kind of, preparation method of back contacts crystal silicon battery, methods described includes as follows
Step：
Step one, random pyramid structure is formed by the method for making herbs into wool in the front of silicon wafer substrate；
Step 2, in the front of silicon wafer substrate by ion injection method formation front surface electric field, in the back of the body of silicon wafer substrate
Face is divided on multiple independent repeat unit regions, each repeat unit region and forms the emitter stage being spaced apart and base stage；
Step 3, anti-reflection layer, the shape on the emitter stage and base stage at the back side of silicon wafer substrate are formed in the front of silicon wafer substrate
Into passivation layer or oxide layer；
Step 4, makes emitter electrode and base electrode on passivation layer or oxide layer, make its respectively with step 2
Emitter stage and base stage formation Ohmic contact；
Step 5, multiple emitter electrodes in same repeat unit are connected by emitter stage busbar, will be multiple
Base electrode is connected by base stage busbar；
Step 6, multiple independent repetition lists are divided into according to the repeat unit region in step 2 by the silicon chip
Member, the base stage busbar in each repeat unit, emitter stage busbar are interconnected, and back contacts crystal silicon battery is made.
Emitter electrode and base electrode, its specific method are made on passivation layer or oxide layer in the step 2
It is：It is open using the wet etching after laser or mask on the passivation layer that the silicon wafer substrate back side is formed, emitter stage
Electrode and base electrode are arranged in opening and connection corresponding with emitter stage and base stage.
Multiple repeat unit regions in the step 2 are in strip, square block or the arrangement of hexagon shape.
To the cutting step of repeat unit in the step 6, specific method is：Pair between adjacent two repeat unit
Answer position that flexible interconnection device is set, two repetition unit areas are drawn and separated, repeat unit is formed；The flexible interconnection device bag
Flexible support substrate, conductive connecting strap and flexible insulation band are included, the conductive connecting strap is arranged on the flexible support substrate,
The flexible insulation band is arranged at described be conductively connected and taken, and the flexible insulation band is arranged at the transmitting of repeat unit described in two
Between pole busbar and/or base stage busbar, and emitter stage of the conductive connecting strap respectively with repeat unit described in two confluxes
Bar and/or the electrical connection of base stage busbar.
Preferably, welding manner can be used by the base stage in the conductive connecting strap in flexible interconnection device and two repeat units
Busbar, emitter stage busbar are interconnected, and back contacts crystal silicon battery is made.
Adjacent two repeat unit is drawn using laser scribe method or wire cutting scribing method and separated.
The present invention has the advantages that relative to prior art：
1) present invention by silicon wafer substrate be divided into emitter electrode in multiple independent repeat units, each repeat unit with
Base electrode is set in distance, while the emitter electrode in same repeat unit is connected by emitter stage busbar, passes through
Base electrode in same repeat unit is connected by base stage busbar, and each is realized finally by the connection between each busbar
Interconnection between repeat unit.The distribution mode of emitter electrode and base electrode of the present invention, shortens electrode
Length, reduces power loss, and the photogenerated current of cell piece is collected as early as possible；Reduce metal electrode and silicon materials
Between stress, improve the reliability of battery.
2) front and back of emitter electrode and base electrode uses ion implantation technique, is adulterated with thermal diffusion
Compare, without increase coating etch layer, photoetching removes the processing step of mask, production and cost of investment reduction space are significantly
Reduction；Passivation layer is provided with the back side of silicon wafer substrate simultaneously, there be the front surface electric field of shallow doped region formation in front, can be well
Reduce surface recombination.
3) present invention, can maximized utilization group by way of silicon wafer substrate is divided into repeat unit and then interconnect again
The smooth surface of part, improves the efficiency of component, and the series-parallel system of repeat unit, optimization voltage and electricity can be redesigned according to demand
The output of stream.
4) present invention is interconnected each independent multiple repeat unit using flexible interconnection device, can be resistant to component
Certain degree of crook, the application of enlarged component；The conductive connecting strap of flexible interconnection device and busbar soldering, can be played
The effect of repeat unit is connected, the operation made beneficial to subsequent components.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, specific embodiment and combination below according to the present invention
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation provided by the present invention for setting multiple repeat units in silicon wafer substrate；
Fig. 2 a are a kind of distribution of electrodes schematic diagrames of repeat unit provided by the present invention；
Fig. 2 b are the distribution of electrodes schematic diagrames of another repeat unit provided by the present invention；
Emitter electrode and base electrode distribution schematic diagram in Fig. 3 a repeat units provided by the present invention；
Fig. 3 b are the C-C schematic cross-sections in Fig. 3 a；
Fig. 4 a are the interconnection figures of flexible interconnection device provided by the present invention and back contacts crystal silicon battery；
Fig. 4 b are position profile figures at D-D at Fig. 4 a；
Fig. 5 is making herbs into wool step diagram provided by the present invention；
Fig. 6 is ion implanting step diagram provided by the present invention；
Fig. 7 is reduced passivation resisting step diagram provided by the present invention；
Fig. 8 is passivation penetration step diagram provided by the present invention；
Fig. 9 is that metal electrode provided by the present invention installs diagram；
Figure 10 a are flexible interconnection apparatus structure profiles provided by the present invention；
Figure 10 b are Figure 10 a upward views；
Figure 11 is repeat unit cutting provided by the present invention and interconnection schematic diagram；
Figure 12 is the preparation method block diagram of back contacts crystal silicon battery provided by the present invention.
In figure：1- silicon wafer substrates, 11- repeat units；2- emitter electrodes；3- base electrodes；4- passivation layers；5- front surfaces
Electric field；6- protective layers；7- emitter stages；8- base stages；9- flexible interconnection devices, 91- flexible support substrates, 92- conductive connecting straps,
93- flexible insulation bands；10- is open；20- emitter stage busbars；30- base stage busbars；40- anti-reflection layers.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
The invention provides a kind of back contacts crystal silicon battery, as shown in Figure 3 a and Figure 3 b shows, including silicon wafer substrate 1 and it is arranged at
Emitter stage 7, base stage 8, emitter electrode 2 and the base electrode 3 at the back side of silicon wafer substrate 1, emitter electrode 2 therein and base stage electricity
The back side that pole 3 is correspondingly formed Ohmic contact silicon wafer substrate 1 with emitter stage 7 and base stage 8 respectively is divided into multiple independent repetition lists
Member, repeat unit here makes in silicon wafer substrate 1 forms independent unit, as shown in figure 1, being set in each repeat unit 11
Have multiple in the emitter stage 7 being spaced apart and base stage 8；As shown in fig. 4 a, it is provided with and each in one end of each repeat unit 11
The emitter stage busbar 20 that emitter electrode 2 is electrically connected, its other end is provided with the base stage electrically connected with each base electrode 3 and confluxed
Realized and interconnected by base stage busbar 30, emitter stage busbar 20 between bar 30, adjacent two repeat unit 11.It is therein to repeat single
Member 11 be in strip, square block or hexagon shape, as shown in Figure 2 b.
Preferably, the emitter stage 7 and base stage 8 in same repeat unit are located in the same horizontal plane, and the two is in interval point
Cloth, is equipped with passivation layer 4 or oxide layer on the outer surface of emitter stage 7 and base stage 8, also is provided with subtracting in the front of silicon wafer substrate 1
Anti- layer 40, as shown in Figure 3 b；The opening 10 being connected with emitter stage 7 and base stage 8 is formed on passivation layer 4 or oxide layer, is seen
Shown in Fig. 8, one end of emitter electrode 2 and one end of base electrode 3 may be contained within opening 10, emitter stage 7 and emitter stage electricity
Pole 2 forms Ohmic contact, base electrode 3 and the formation Ohmic contact of base stage 8.Oxide layer or passivation layer in repeat unit, can
Think AlOx, SiNx, SiOx etc. and their composite bed, thickness is in 50~150nm.In emitter stage and the passivation layer of base region
There is opening 10 on 4, opening 10 can be hole, and diameter is in 10~50 μm, 100~500 μm of pitch of holes.
Each repeat unit 11 in such as Fig. 4 a, silicon wafer substrate 1 therein is in setting is separated, and adjacent two repeat unit 11 is set
Flexible interconnect device 9, and the connection in series-parallel between two repeat units 11 is realized by flexible interconnection device 9.Such as Figure 10 a and Figure 10 b
Shown, flexible interconnection device 9 includes flexible support substrate 91, conductive connecting strap 92 and flexible insulation band 93, conductive connecting strap 92
It is arranged on flexible support substrate 91, flexible insulation band 93 is arranged on conductive connecting strap 92, flexible insulation band 93 is arranged at two
Between the emitter stage busbar 20 and/or base stage busbar 30 of repeat unit 11, and the repeat unit 11 of conductive connecting strap 92 and two
Emitter stage busbar 20 and/or base stage busbar 30 weld.
Adjacent repeat unit 11 is connect by the progress connection in series-parallel of flexible interconnection device 9 in fig .4.As shown in Figure 4 b, wherein
Flexible support substrate 91 can be thermoplastic layer and fexible film composite construction.Fexible film can be poly terephthalic acid
Glycol ester, thickness is in 10~100 μ ms, and thermoplastic layer can be the SURLYN sarin resins of Du Pont, and thickness is 10~100
In μ m.The μ m of thickness 1~50 of conductive connecting strap, can be gold, copper, aluminium, titanium, platinum, silver and their alloy etc..It is soft
Property insulating tape 93 can be flexible insulating materials, such as polyethylene terephthalate, its thickness is according to the thickness of backplate
It typically can be 1~50 μm depending on degree.In addition, the width of each film layer of flexible interconnection device 9 according to the size of repeat unit 11 and
Depending on the width of backplate.Wide 5mm~the 10mm of flexible support substrate 91, the wide 4~8mm of conductive connecting strap 92 and flexible insulation band
93 wide 2~6mm.
As shown in Figure 3 b, it is additionally provided with the front of silicon wafer substrate 1 in shallow doped region, shallow doped region and forms front surface electric field 5.
Silicon wafer substrate 1 of the present invention can be n-type or p-type silicon plate base, 160~200 μm of its substrate thickness.With
It is lower to be described by taking n-type silicon chip as an example.
As shown in Figure 2 b, the section of repeat unit 11 from top to bottom, front smooth surface be pyramid suede structure, front by
Smooth surface has anti-reflection layer, and 20~100nm of thickness can be SiNx, SiOx, SiONx etc. and their composite bed.The shallow doping of front surface
The n+ type front surface electric fields that area is formed, dopant material can be phosphorus or arsenic, and 0.1~1 μm of junction depth, sheet resistance is 50~150ohm/
, 160~200 μm of the substrate of n-type silicon plate base, minority carrier life time ＞ 200 μ s, 1~50ohm/cm of resistance.The back side of silicon wafer substrate 1
It is emitter stage 7 and base stage 8 that patterned heavily doped area is formed.0.1~1 μm of emitter electrode junction depth, 20~100ohm/ of sheet resistance
, dopant material can be boron or gallium；0.5~2 μm of base electrode junction depth, sheet resistance 20~100ohm/, dopant material can be with
It is phosphorus or arsenic；Emitter stage 7 and base stage 8 are spaced apart in repeat unit 11, such as Fig. 3 a striped strides distribution, or Fig. 3 b points
Shape is spaced apart.Emitter stage 7 accounts for 10~20 times that area is about base stage 8.Such as the distribution of Fig. 3 a striateds, emitter stage is wide by 0.1~
1mm, base stage is wide 10~100 μm.
Such as Fig. 3 a, metal connection, i.e. emitter electrode 2 and base stage are formed respectively in the region for forming emitter stage and base stage
Electrode 3,1~50 μm of the metal electrode thickness formed in it, conductive material can be gold, copper, aluminium, titanium, platinum, silver and their conjunction
Gold etc..Such as Fig. 2 a, the knot of the base electrode 3 at the back side of silicon wafer substrate 1 and the separated formation interdigitated of emitter electrode 2 is arranged at
Structure, the grid line width of emitter electrode 2 can be wider than the grid line width of base electrode 3, can also be identical.Emitter electrode 2
Grid line is wide 100~200 μm, and the grid line of base electrode 3 is wide 50~100 μm.The width of emitter stage busbar 20 and base stage busbar 30
0.5~1mm of scope is spent, for ease of welding, there can be pad on emitter stage busbar 20 or base stage busbar 30, pad is not
Draw on the diagram, 3~4mm of the pad length of side.
Flexible interconnection device be used for connect emitter electrode and base electrode, can also connect be both emitter electrode or
It is both base electrode, forms series connection respectively and in parallel.As shown in figures 4 a and 4b, flexible insulation band 93 is located at emitter electrode 2
Between base electrode 3, and between conductive connecting strap 92 and backside passivation layer 4, it can prevent from being led by backside passivation layer 4 is penetrated
The conductive connecting strap 92 of cause and the short circuit of semiconductor layer.If Fig. 4 b are the series connection of connection emitter electrode 2 and base electrode 3.Figure
11 be the parallel connection for connecting two base electrodes.The connected mode of repeat unit can be adjusted according to the requirement of the voltage x current of component.
The preparation method that the present invention also provides such a back contacts crystal silicon solar batteries, as shown in figure 12, is specifically described such as
Under：
【101】Random pyramid structure is formed by the method for alkali making herbs into wool in the front of silicon wafer substrate.
As shown in figure 5, removing damage layer by the method for alkali making herbs into wool in the front of silicon wafer substrate 1, and form random gold
Word tower structure, alkali can be KOH, NaOH, the mixing of the organic solvent such as IPA, and treatment temperature is less than 100 DEG C, and the back side is carried out
Polishing removes thickness and is less than 50 μm, can be wet chemistry or mechanical polishing mode.
【102】In the front of silicon wafer substrate by ion injection method formation front surface electric field, at the back side of silicon wafer substrate
It is divided on multiple independent repeat unit regions, each repeat unit region and forms the emitter stage being spaced apart and base stage.
As shown in fig. 6, forming planless shallow doping by the method for ion implanting in the front of the silicon wafer substrate 1
Area, referred to as front surface electric field 5, if silicon wafer substrate 1 be n-type, front surface electric field 5 be n+ types can be injection phosphorus, arsenic；
The back side of silicon wafer substrate 1 is divided into multiple independent repeat unit regions, and ion implanting is passed through on each repeat unit region
Method form patterned p+ and n+ doped regions respectively, that is, form emitter stage 7 and base stage 8, emitter stage 7 and base stage 8 are in interval
Distribution.Boron or gallium that emitter stage 7 injects, phosphorus, the arsenic of the injection of base stage 8.Optionally, can also be by elder generation in silicon wafer substrate 1
The back side forms planless p+ types doped region, then in follow-up technique by way of wet etching or lbg shape
Into patterned groove area, n+ type doped regions are formed in groove area, so as to form the spaced emitter stage 7 in the back side and base stage
8.Whole silicon wafer substrate 1 is annealed under inert gas atmosphere after ion implanting, such as N2, Ar atmosphere, removal ion implanting
In damage.Preferably, wherein obtained emitter stage 7 and base stage 8 are located in same level.
【103】Anti-reflection layer is formed in the front of silicon wafer substrate, is formed on the emitter stage and base stage at the back side of silicon wafer substrate
Passivation layer or oxide layer.
As shown in fig. 7, forming anti-reflection layer 40, such as SiNx, TIOx or SiONx in the front of silicon chip.In the back of the body of silicon wafer substrate
Face forms passivation layer 4, such as TIOx, AlOx, and preparation method can be including the use of plasma enhanced chemical vapor deposition (PECVD), original
Sublayer deposition (ALD), aumospheric pressure cvd (APCVD) and sputter deposition (PVD).It can also optionally be noted in ion
O is added in annealing process after entering2Atmosphere, the front and back of silicon wafer substrate 1 simultaneously formed surface oxide layer play anti-reflection and
The effect of passivation.
【104】Emitter electrode and base electrode are made on passivation layer or oxide layer, make its respectively with emitter stage and base
Pole is connected.
The wet etching after laser or mask is used as shown in Figure 8 in the emitter electrode and base stage at the silicon wafer substrate back side
Eleven punch 11, or opening 10 are entered in corresponding passivation layer region.
As shown in figure 9, forming patterned metal electrode at the back side of silicon wafer substrate, metal electrode passes through over the passivation layer
Opening respectively with emitter stage and base stage formation Ohmic contact, that is, form emitter electrode 2 and base electrode 3.Silk can be used
The mode such as plating after wire mark brush, inkjet printing, mask.Before shape that emitter electrode 2 and base electrode 3 are formed and distribution
It has been described that, repeated no more here.
【105】Multiple emitter electrodes in same repeat unit are connected by emitter stage busbar, by multiple bases
Pole electrode is connected by base stage busbar.
【106】According to step【102】The repeat unit region divided is split, and obtains multiple independent repetition lists
Member, the base stage busbar in each repeat unit, emitter stage busbar are interconnected, and back contacts crystal silicon battery is made.
In order that back contacts crystal silicon battery can realize bending, it is preferable that the cutting between repeat unit described in step 6
Step is cut, specific method is：The corresponding position between adjacent two repeat unit for needing scribing is pasted onto using flexible interconnection device
Put；Two repeat unit scribings at flexible interconnection device paste position are opened using laser scribe, then use welding manner will
Conductive connecting strap in flexible interconnection device is interconnected with the base stage busbar in two repeat units, emitter stage busbar, system
Back contacts crystal silicon battery is obtained, flexible interconnection device it has been observed that just repeat no more here.
As shown in figure 11, the relevant position at the silicon wafer substrate back side is first pasted onto using flexible interconnection device, is then reused
Logical O2Laser scribe silicon wafer substrate is scratched into repeat unit, repeat unit can be that strip can also be square block, six sides
Shape.For ease of follow-up interconnection operation, repeat unit still needs to be connected by flexible support substrate 91.So being needed during scribing
At least leave the part of flexible support substrate 91.The cut surface of repeat unit should have insulating protective layer 6, such as SiOx.Optionally
Mechanical system can be used to carry out scribing, such as wire cutting scribing silicon wafer substrate, then by silicon wafer substrate in O2Annealed under atmosphere,
Cut surface formation protective layer.The conductive connecting strap 92 and the contact area of backplate of flexible interconnection device 9 are welded, welded
The mode connect can be laser welding, hot air welding etc..
Eventually form the series parallel structure between multiple repeat units.According to the demand of the voltage and current of component, Ke Yiling
Living carries out the connection of connection in series-parallel again to repeat unit.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in protection scope of the present invention.
Claims (11)
1. a kind of back contacts crystal silicon battery, including silicon wafer substrate and the emitter stage, base stage, the hair that are arranged at the silicon wafer substrate back side
Emitter-base bandgap grading electrode and base electrode, the emitter electrode and base electrode are correspondingly formed with the emitter stage and the base stage respectively
Ohmic contact, it is characterised in that the back side of the silicon wafer substrate is divided into multiple independent repeat units, the emitter stage and institute
It is in be spaced apart in each repeat unit to state base stage；It is provided with one end of each repeat unit with being sent out each described
The emitter stage busbar of emitter-base bandgap grading electrode electrical connection, its other end is provided with the base stage electrically connected with base electrode each described and confluxed
Realized and interconnected by described base stage busbar, emitter stage busbar between bar, repeat unit described in adjacent two；The silicon chip base
The flexible interconnection device that plate is used to electrically connect the repeat unit provided with least one, the two neighboring repeat unit passes through
The flexible interconnection device realizes the connection in series-parallel between repeat unit described in two；Described flexible interconnection device is served as a contrast including flexible support
Bottom, conductive connecting strap and flexible insulation band, the conductive connecting strap are arranged on the flexible support substrate, the flexible insulation
Band is arranged at described be conductively connected and taken, the flexible insulation band be arranged at repeat unit described in two emitter stage busbar and/
Or between base stage busbar, and the emitter stage busbar and/or base stage of the conductive connecting strap respectively with repeat unit described in two
Busbar is electrically connected.
2. back contacts crystal silicon battery according to claim 1, it is characterised in that described emitter stage and the outer surface of base stage
On be equipped with and form what is be connected with described emitter stage and base stage on passivation layer or oxide layer, the passivation layer or oxide layer
Opening, described emitter electrode and base electrode may be contained within the opening and respectively with described emitter stage and base stage pair
It should connect.
3. back contacts crystal silicon battery according to claim 2, it is characterised in that described base electrode and emitter electrode
Structure that is separated and forming interdigitated, the grid line that the grid line width of emitter electrode is more than or equal to the base electrode is wide
Degree.
4. back contacts crystal silicon battery according to claim 3, it is characterised in that the grid line of described emitter electrode is a width of
100~200 μm, a width of 50~100 μm of the grid line of base electrode, the width of emitter stage busbar and base stage busbar for 0.5~
1mm。
5. back contacts crystal silicon battery according to claim 1, it is characterised in that described support substrate be thermoplastic layer and
The composite construction of fexible film；The thickness of the fexible film is 10~100 μm, and the thickness of the thermoplastic layer is 10~100 μ
M, the thickness of the conductive connecting strap and insulating tape is 1~50 μm.
6. back contacts crystal silicon battery according to claim 1, it is characterised in that the front of the silicon wafer substrate is additionally provided with shallow
Front surface electric field is formed in doped region, the shallow doped region.
7. back contacts crystal silicon battery according to claim 1, it is characterised in that described repeat unit is in strip, square
Shape or hexagon shape.
8. a kind of preparation method of back contacts crystal silicon battery, it is characterised in that methods described comprises the following steps：
Step one, random pyramid structure is formed by the method for making herbs into wool in the front of silicon wafer substrate；
Step 2, in the front of silicon wafer substrate by ion injection method formation front surface electric field, draws at the back side of silicon wafer substrate
It is divided on multiple independent repeat unit regions, each repeat unit region and forms the emitter stage being spaced apart and base stage；
Step 3, forms anti-reflection layer in the front of silicon wafer substrate, forms blunt on the emitter stage and base stage at the back side of silicon wafer substrate
Change layer or oxide layer；
Step 4, makes emitter electrode and base electrode on passivation layer or oxide layer, make its respectively with the hair in step 2
Emitter-base bandgap grading and base stage formation Ohmic contact；
Step 5, multiple emitter electrodes in same repeat unit are connected by emitter stage busbar, by multiple base stages
Electrode is connected by base stage busbar；
Step 6, multiple independent repetition lists are divided into according to ready-portioned repeat unit region in step 2 by the silicon chip
Member, the base stage busbar in each repeat unit, emitter stage busbar are interconnected, and back contacts crystal silicon battery, specific side is made
Method is：
The correspondence position between unit area is repeated adjacent two, and flexible interconnection device is set；Unit area segmentation is repeated by two
Open, form repeat unit；
The flexible interconnection device includes flexible support substrate, conductive connecting strap and flexible insulation band, and the conductive connecting strap is set
It is placed on the flexible support substrate, the flexible insulation band is arranged at described be conductively connected and taken, and the flexible insulation band is set
It is placed between the emitter stage busbar of repeat unit described in two and/or base stage busbar, and the conductive connecting strap is respectively with two
Emitter stage busbar and/or base stage the busbar electrical connection of the repeat unit.
9. the preparation method of back contacts crystal silicon battery according to claim 8, it is characterised in that
Emitter electrode and base electrode are made on passivation layer or oxide layer in the step 2, its specific method is：Make
Be open with the wet etching after laser or mask on the passivation layer that the silicon wafer substrate back side is formed, emitter electrode and
Base electrode is arranged in opening and connection corresponding with emitter stage and base stage.
10. the preparation method of back contacts crystal silicon battery according to claim 8, it is characterised in that
Multiple repeat unit regions in the step 2 are in strip, square block or the arrangement of hexagon shape.
11. the preparation method of back contacts crystal silicon battery according to claim 8, it is characterised in that use laser scribe side
Method or wire cutting scribing method separate adjacent two repetition unit areas.
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| CN108555447A (en) * | 2017-08-21 | 2018-09-21 | 潘绍合 | A kind of modified form photovoltaic panel assembly |
| CN115000247B (en) * | 2022-07-29 | 2022-11-04 | 中国华能集团清洁能源技术研究院有限公司 | Manufacturing method of internally passivated back contact PERC cell |
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