CN203351589U - 金属-氧化物-金属电容器 - Google Patents
金属-氧化物-金属电容器 Download PDFInfo
- Publication number
- CN203351589U CN203351589U CN2012207474274U CN201220747427U CN203351589U CN 203351589 U CN203351589 U CN 203351589U CN 2012207474274 U CN2012207474274 U CN 2012207474274U CN 201220747427 U CN201220747427 U CN 201220747427U CN 203351589 U CN203351589 U CN 203351589U
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- CN
- China
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 title claims abstract description 57
- 239000003990 capacitor Substances 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000001465 metallisation Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 31
- 230000008859 change Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/533,280 | 2012-06-26 | ||
US13/533,280 US9123719B2 (en) | 2012-06-26 | 2012-06-26 | Metal-oxide-metal capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203351589U true CN203351589U (zh) | 2013-12-18 |
Family
ID=47562943
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210587585.2A Active CN103515453B (zh) | 2012-06-26 | 2012-12-28 | 金属‑氧化物‑金属电容器 |
CN2012207474274U Expired - Lifetime CN203351589U (zh) | 2012-06-26 | 2012-12-28 | 金属-氧化物-金属电容器 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210587585.2A Active CN103515453B (zh) | 2012-06-26 | 2012-12-28 | 金属‑氧化物‑金属电容器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9123719B2 (zh) |
EP (1) | EP2680308B1 (zh) |
CN (2) | CN103515453B (zh) |
TW (1) | TWI487123B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9887257B2 (en) * | 2015-12-01 | 2018-02-06 | Altera Corporation | Scalable fixed-footprint capacitor structure |
WO2019127489A1 (zh) * | 2017-12-29 | 2019-07-04 | 华为技术有限公司 | 电容器 |
EP3514828B1 (en) * | 2018-01-19 | 2021-08-25 | Socionext Inc. | Semiconductor integrated circuitry |
US10453791B2 (en) | 2018-02-06 | 2019-10-22 | Apple Inc. | Metal-on-metal capacitors |
EP3742482B1 (en) | 2019-05-24 | 2023-02-22 | Socionext Inc. | Integrated-circuit devices and circuitry comprising the same |
CN111146181B (zh) * | 2019-11-26 | 2022-03-04 | 上海集成电路研发中心有限公司 | 一种半导体结构和制作方法 |
CN111900251B (zh) * | 2020-08-26 | 2024-02-27 | 上海华虹宏力半导体制造有限公司 | Mom电容器及半导体元件 |
US11532546B2 (en) * | 2021-04-26 | 2022-12-20 | Nxp B.V. | Fringe capacitor arranged based on metal layers with a selected orientation of a preferred direction |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
US6690570B2 (en) * | 2000-09-14 | 2004-02-10 | California Institute Of Technology | Highly efficient capacitor structures with enhanced matching properties |
CA2395900A1 (en) * | 2002-08-12 | 2004-02-12 | Christopher Andrew Devries | Matched vertical capacitors |
JP2006261455A (ja) * | 2005-03-17 | 2006-09-28 | Fujitsu Ltd | 半導体装置およびmimキャパシタ |
US7485912B2 (en) | 2006-03-28 | 2009-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flexible metal-oxide-metal capacitor design |
TWI321842B (en) * | 2006-12-05 | 2010-03-11 | Via Tech Inc | Capacitor structure for integrated circuit |
US7698678B2 (en) * | 2007-05-30 | 2010-04-13 | International Business Machines Corporation | Methodology for automated design of vertical parallel plate capacitors |
US7718546B2 (en) | 2007-06-27 | 2010-05-18 | Sandisk 3D Llc | Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon |
US8379365B2 (en) | 2009-04-28 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal oxide metal capacitor with slot vias |
US8536016B2 (en) * | 2009-05-22 | 2013-09-17 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit system with hierarchical capacitor and method of manufacture thereof |
-
2012
- 2012-06-26 US US13/533,280 patent/US9123719B2/en active Active
- 2012-12-17 TW TW101147835A patent/TWI487123B/zh not_active IP Right Cessation
- 2012-12-27 EP EP12008625.1A patent/EP2680308B1/en active Active
- 2012-12-28 CN CN201210587585.2A patent/CN103515453B/zh active Active
- 2012-12-28 CN CN2012207474274U patent/CN203351589U/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TW201401526A (zh) | 2014-01-01 |
TWI487123B (zh) | 2015-06-01 |
US9123719B2 (en) | 2015-09-01 |
EP2680308A3 (en) | 2017-07-12 |
CN103515453B (zh) | 2018-03-27 |
US20130342955A1 (en) | 2013-12-26 |
EP2680308B1 (en) | 2020-03-18 |
EP2680308A2 (en) | 2014-01-01 |
CN103515453A (zh) | 2014-01-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170302 Address after: Singapore Singapore Patentee after: Avago Technologies General IP (Singapore) Pte. Ltd. Address before: California, USA Patentee before: BROADCOM Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181018 Address after: Singapore Singapore Patentee after: Avago Technologies General IP (Singapore) Pte. Ltd. Address before: Singapore Singapore Patentee before: Avago Technologies General IP (Singapore) Pte. Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20131218 |