CN112368831A - 一种集成电路 - Google Patents

一种集成电路 Download PDF

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Publication number
CN112368831A
CN112368831A CN201880095158.8A CN201880095158A CN112368831A CN 112368831 A CN112368831 A CN 112368831A CN 201880095158 A CN201880095158 A CN 201880095158A CN 112368831 A CN112368831 A CN 112368831A
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metal
pole
strips
layers
metal strip
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CN201880095158.8A
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English (en)
Inventor
邹小卫
郑伟
吴春蕾
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN112368831A publication Critical patent/CN112368831A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

本申请公开了一种集成电路，该集成电路包括电容结构，所述电容结构包括设置在多层金属层上的多个金属条阵列，每金属条阵列中包括多个沿相同方向延伸的金属条(P1‑P5，V1‑V5)，每个金属条阵列中的金属条(P1‑P5，V1‑V5)包括第一极金属条和第二极金属条，且第一极金属条和第二极金属条分别电连接不同的电极(E1，E2)，如此，在同层金属层上可以形成横向电容。另外，每层金属层上的金属条阵列中的金属条的延伸方向与相邻金属层上的金属阵列中的金属条的延伸方向不同，因而，位于相邻两层金属层上的、在金属层所在平面上的投影有交叠的第一极金属条和第二极金属条之间也可以形成纵向电容。因而，该电容结构的电容密度较大，电容品质较高。

Description

PCT国内申请，说明书已公开。

Claims (10)

  1. PCT国内申请，权利要求书已公开。
CN201880095158.8A 2018-09-21 2018-09-21 一种集成电路 Pending CN112368831A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/106863 WO2020056705A1 (zh) 2018-09-21 2018-09-21 一种集成电路

Publications (1)

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CN112368831A true CN112368831A (zh) 2021-02-12

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ID=69888171

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CN201880095158.8A Pending CN112368831A (zh) 2018-09-21 2018-09-21 一种集成电路

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CN (1) CN112368831A (zh)
WO (1) WO2020056705A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1527385A (zh) * 2003-03-04 2004-09-08 台湾积体电路制造股份有限公司 多层叉合金属电容结构
CN101409286A (zh) * 2007-10-12 2009-04-15 瑞昱半导体股份有限公司 半导体电容结构
CN101593777A (zh) * 2008-05-29 2009-12-02 联发科技股份有限公司 电容结构及其金属层布局
CN102473710A (zh) * 2009-08-27 2012-05-23 国际商业机器公司 叉指状竖直平行电容器
CN205992528U (zh) * 2016-09-06 2017-03-01 中芯国际集成电路制造(北京)有限公司 一种mom电容器结构

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1527385A (zh) * 2003-03-04 2004-09-08 台湾积体电路制造股份有限公司 多层叉合金属电容结构
CN101409286A (zh) * 2007-10-12 2009-04-15 瑞昱半导体股份有限公司 半导体电容结构
CN101593777A (zh) * 2008-05-29 2009-12-02 联发科技股份有限公司 电容结构及其金属层布局
CN102473710A (zh) * 2009-08-27 2012-05-23 国际商业机器公司 叉指状竖直平行电容器
CN205992528U (zh) * 2016-09-06 2017-03-01 中芯国际集成电路制造(北京)有限公司 一种mom电容器结构

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WO2020056705A1 (zh) 2020-03-26

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