CN203218312U - 发光二极管 - Google Patents
发光二极管 Download PDFInfo
- Publication number
- CN203218312U CN203218312U CN2012204833792U CN201220483379U CN203218312U CN 203218312 U CN203218312 U CN 203218312U CN 2012204833792 U CN2012204833792 U CN 2012204833792U CN 201220483379 U CN201220483379 U CN 201220483379U CN 203218312 U CN203218312 U CN 203218312U
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- CN
- China
- Prior art keywords
- light
- layer
- emitting diode
- structure portion
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
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- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- ZFSFDELZPURLKD-UHFFFAOYSA-N azanium;hydroxide;hydrate Chemical compound N.O.O ZFSFDELZPURLKD-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
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- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011204618A JP5961359B2 (ja) | 2011-09-20 | 2011-09-20 | 発光ダイオード及びその製造方法 |
| JP204618/2011 | 2011-09-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203218312U true CN203218312U (zh) | 2013-09-25 |
Family
ID=48180540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012204833792U Expired - Fee Related CN203218312U (zh) | 2011-09-20 | 2012-09-20 | 发光二极管 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5961359B2 (enExample) |
| KR (1) | KR101445451B1 (enExample) |
| CN (1) | CN203218312U (enExample) |
| TW (1) | TWI495152B (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106935689A (zh) * | 2015-12-31 | 2017-07-07 | 比亚迪股份有限公司 | 倒装芯片及其制备方法和照明设备 |
| CN109994582A (zh) * | 2018-01-02 | 2019-07-09 | 山东浪潮华光光电子股份有限公司 | 一种降低GaAs基外延片翘曲度的DBR结构 |
| CN110690337A (zh) * | 2019-09-29 | 2020-01-14 | 维沃移动通信有限公司 | 一种闪光灯结构及电子设备 |
| CN115000266A (zh) * | 2019-10-08 | 2022-09-02 | 厦门三安光电有限公司 | 一种发光二极管 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150101783A (ko) | 2014-02-27 | 2015-09-04 | 서울바이오시스 주식회사 | 발광 다이오드 및 그 제조 방법 |
| TWI588985B (zh) | 2016-04-22 | 2017-06-21 | 友達光電股份有限公司 | 微型發光二極體結構及其畫素單元與發光二極體顯示面板 |
| US11658460B2 (en) | 2018-03-26 | 2023-05-23 | Lawrence Livermore National Security, Llc | Engineered current-density profile diode laser |
| TWI661584B (zh) * | 2018-05-18 | 2019-06-01 | 光磊科技股份有限公司 | 發光晶粒、封裝結構及其相關製造方法 |
| US20250267986A1 (en) * | 2024-02-19 | 2025-08-21 | Seoul Viosys Co., Ltd. | Light emitting device and light emitting apparatus including the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2310316A (en) * | 1996-02-15 | 1997-08-20 | Sharp Kk | Semiconductor laser |
| JP2002289920A (ja) * | 2001-03-27 | 2002-10-04 | Kyocera Corp | Ｌｅｄアレイおよびその製造方法 |
| JP2006190854A (ja) | 2005-01-07 | 2006-07-20 | Sony Corp | 発光ダイオード |
| JP2006302919A (ja) * | 2005-04-15 | 2006-11-02 | Sony Corp | 面発光型半導体レーザおよびその製造方法 |
| KR100982988B1 (ko) | 2008-05-14 | 2010-09-17 | 삼성엘이디 주식회사 | 수직구조 반도체 발광소자 및 그 제조방법 |
| KR101497953B1 (ko) * | 2008-10-01 | 2015-03-05 | 삼성전자 주식회사 | 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법 |
| JP2010153581A (ja) * | 2008-12-25 | 2010-07-08 | Showa Denko Kk | 半導体発光素子及び半導体発光素子の製造方法、ランプ |
| JP5526712B2 (ja) * | 2009-11-05 | 2014-06-18 | 豊田合成株式会社 | 半導体発光素子 |
| JP2011124314A (ja) * | 2009-12-09 | 2011-06-23 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
| KR101055766B1 (ko) | 2009-12-14 | 2011-08-11 | 서울옵토디바이스주식회사 | 반사기들을 갖는 발광 다이오드 칩 |
| KR101654340B1 (ko) * | 2009-12-28 | 2016-09-06 | 서울바이오시스 주식회사 | 발광 다이오드 |
-
2011
- 2011-09-20 JP JP2011204618A patent/JP5961359B2/ja not_active Expired - Fee Related
-
2012
- 2012-09-17 TW TW101133919A patent/TWI495152B/zh not_active IP Right Cessation
- 2012-09-17 KR KR1020120102669A patent/KR101445451B1/ko not_active Expired - Fee Related
- 2012-09-20 CN CN2012204833792U patent/CN203218312U/zh not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106935689A (zh) * | 2015-12-31 | 2017-07-07 | 比亚迪股份有限公司 | 倒装芯片及其制备方法和照明设备 |
| CN109994582A (zh) * | 2018-01-02 | 2019-07-09 | 山东浪潮华光光电子股份有限公司 | 一种降低GaAs基外延片翘曲度的DBR结构 |
| CN109994582B (zh) * | 2018-01-02 | 2020-08-25 | 山东华光光电子股份有限公司 | 一种降低GaAs基外延片翘曲度的DBR结构 |
| CN110690337A (zh) * | 2019-09-29 | 2020-01-14 | 维沃移动通信有限公司 | 一种闪光灯结构及电子设备 |
| CN110690337B (zh) * | 2019-09-29 | 2021-07-09 | 维沃移动通信有限公司 | 一种闪光灯结构及电子设备 |
| CN115000266A (zh) * | 2019-10-08 | 2022-09-02 | 厦门三安光电有限公司 | 一种发光二极管 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201318205A (zh) | 2013-05-01 |
| TWI495152B (zh) | 2015-08-01 |
| KR20130031211A (ko) | 2013-03-28 |
| JP2013065785A (ja) | 2013-04-11 |
| JP5961359B2 (ja) | 2016-08-02 |
| KR101445451B1 (ko) | 2014-09-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130925 Termination date: 20200920 |