CN203205462U - High-brightness LED chip carrier structure having strong heat radiation function - Google Patents

High-brightness LED chip carrier structure having strong heat radiation function Download PDF

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Publication number
CN203205462U
CN203205462U CN 201320052023 CN201320052023U CN203205462U CN 203205462 U CN203205462 U CN 203205462U CN 201320052023 CN201320052023 CN 201320052023 CN 201320052023 U CN201320052023 U CN 201320052023U CN 203205462 U CN203205462 U CN 203205462U
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CN
China
Prior art keywords
mentioned
led chip
carrier structure
electrode
fin
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Expired - Fee Related
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CN 201320052023
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Chinese (zh)
Inventor
周有旺
王平
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JIANGSU HUAYING GUANGBAO TECHNOLOGY Co Ltd
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JIANGSU HUAYING GUANGBAO TECHNOLOGY Co Ltd
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Priority to CN 201320052023 priority Critical patent/CN203205462U/en
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Publication of CN203205462U publication Critical patent/CN203205462U/en
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Abstract

The utility model discloses a high-brightness LED chip carrier structure having a strong heat radiation function. The high-brightness LED chip carrier structure comprises a radiating fin, electrodes, and a packaging colloid and a silica gel body which are used for packing the heat radiation member and the electrodes into a whole, wherein the center of the radiating fin recesses downwards and a heat radiation area is formed; the LED chips are fixed on the upper surface of the heat radiation area; the packaging colloid is arranged in seams between the radiating fin and the electrodes and seams between the electrodes so that the radiating fin and the electrodes are separated and insulation is thus formed; the lower surface of the heat radiation area of the radiating fin, and one ends, far away from the radiating fin, of the electrodes are exposed outside of the packaging colloid; and a reflection hole with a larger upper portion and a smaller lower portion is formed in the packaging colloid above the LED chips. Since the lower surface of the heat radiation area of the radiating fin is exposed outside the packaging colloid, the LED chip carrier structure has strong heat radiation effect and is not restrained from heat radiation, so that the carrier structure can adopt LED chips with relatively high power so as to achieve higher brightness.

Description

High brightness LED chip carrier structure with strong heat sinking function
Technical field
The utility model relates to a kind of led chip carrier structure, is specifically related to a kind of high brightness LED chip carrier structure with strong heat sinking function.
Background technology
At present, many led chips all are that often there is following defective in existing carrier structure because thereby the structure imperfection of carrier causes itself absolute advantage can't allow market accept: 1, bright dipping cause inadequately led chip itself possess superpower energy-conservation luminous efficiency and do not embody; Do not cause life-span more than 100,000 hours that led chip has often because the too high damage of junction temperature of chip thereby 2, radiating effect is good; Do not cause airborne oxygen and moisture infiltration to make the oxidized and decay of chip thereby 3, air-tightness is good.
Yet-have does not have a kind of led chip carrier structure that can effectively improve brightness, reinforcement heat radiation and have good seal now.
The utility model content
For solving the deficiencies in the prior art, the purpose of this utility model is to provide a kind of led chip carrier structure that can effectively improve brightness, reinforcement heat radiation and have good seal.
In order to realize above-mentioned target, the utility model adopts following technical scheme:
High brightness LED chip carrier structure with strong heat sinking function, comprise: a plurality of led chips, it is characterized in that, also comprise: fin, be arranged at the electrode of the fin left and right sides respectively, be used for heat sink and as a whole packing colloid and the colloidal silica of electrode package; Being formed centrally downward depression in the fin has heat dissipation region, and led chip is fixed on the upper surface of heat dissipation region; Packing colloid is filled in and in the slit between fin and electrode and electrode and the electrode they is separated to constitute insulation, and packing colloid all constitutes air-tightness with fin, electrode, colloidal silica and is combined; The lower surface of the heat dissipation region of fin and electrode expose outside packing colloid away from an end of fin, packing colloid is formed with a up big and down small reflection hole above led chip, the heat dissipation region of fin and electrode all expose outside packing colloid by reflection hole near an end of fin, led chip is electrically connected by the gold thread formation of passing colloidal silica with the end of electrode near fin, and reflection hole is filled sealing by colloidal silica.
Aforesaid high brightness LED chip carrier structure with strong heat sinking function is characterized in that the number of the chip of LED is 3.
Preceding described high brightness LED chip carrier structure with strong heat sinking function is characterized in that the chip of LED is respectively red LED chip, blue-light LED chip and green light LED chip.
Aforesaid high brightness LED chip carrier structure with strong heat sinking function is characterized in that the number of electrode is 6, and correspondence is electrically connected with the led chip formation in twos respectively.
Aforesaid described high brightness LED chip carrier structure with strong heat sinking function is characterized in that reflection hole is the truncated cones body opening.
Aforesaid high brightness LED chip carrier structure with strong heat sinking function is characterized in that, the lower surface that exposes packing colloid of heat dissipation region be shaped as the rectangle that the summit is fillet.
Aforesaid high brightness LED chip carrier structure with strong heat sinking function is characterized in that, the part that colloidal silica exposes outside the packing colloid is the part of spheroid.
Aforesaid high brightness LED chip carrier structure with strong heat sinking function is characterized in that fin and/or electrode are made of the copper alloy of electroplate.
Aforesaid high brightness LED chip carrier structure with strong heat sinking function is characterized in that packing colloid forms by PPA is plastic injection-moulded.
Aforesaid high brightness LED chip carrier structure with strong heat sinking function is characterized in that, colloidal silica adds the mixed powder injection that fluorescent material constitutes by transparent silica gel and forms.
Usefulness of the present utility model is: because the lower surface of the heat dissipation region of fin is exposed to outside the packing colloid, it can be by directly contacting the effect that obtains strong heat radiation with large-scale fin that aluminium base or light fixture have, because the restriction of no longer being dispelled the heat, therefore in carrier structure of the present utility model, can adopt than the high-power LED chip, obtain higher brightness, moreover fin is as a part that constitutes reflector, electroplate makes it possess superior reflective function, has further increased brightness.
Description of drawings
Fig. 1 is the positive perspective view (among the figure because colloidal silica block other structures not shown) of a preferred embodiment of the present utility model;
Fig. 2 is reverse side perspective view embodiment illustrated in fig. 1.
The implication of Reference numeral among the figure:
1, led chip, 2, fin, 201, heat dissipation region, 3, electrode, 4, packing colloid, 5, the hole wall of reflection hole, 6, gold thread.
Embodiment
Below in conjunction with the drawings and specific embodiments the utility model is done concrete introduction.
Shown in seeing figures.1.and.2, the high brightness LED chip carrier structure with strong heat sinking function of the present utility model mainly comprises: led chip, fin, electrode, colloidal silica, colloidal silica.
Wherein, fin is mainly used to form the zone of placing led chip and is used for forming concrete radiator structure.Electrode is mainly used in realizing being electrically connected of extraneous terminal and led chip, therefore the general paired configuration of electrode is separately positioned on the both sides of fin, just the both sides of led chip, two electrodes of both sides correspondence are one group, respectively as positive pole and the negative pole of a led chip.
Introduce the utility model for convenience, we are example with the technical scheme with 3 led chips and 6 electrodes shown in Figure 1.6 electrodes are respectively positive pole and the negative pole of 3 led chips.The chip of these three LED is respectively red LED chip, blue-light LED chip and green light LED chip
In order to realize heat radiation, the center of fin is formed with a downward sunk area (said be as the criterion with orientation shown in Figure 1 up and down, down with) here, and this zone is heat dissipation region, and led chip all is fixed on the upper surface of heat dissipation region.
Packing colloid is used for fin is become as a whole with electrode package with colloidal silica, particularly, according to manufacturing procedure, what at first form is packing colloid, packing colloid forms the main profile of the utility model carrier, it constitutes coating to the part-structure of electrode and fin, make their fixed-site relative to each other, and packing colloid is filled in and in the slit between fin and electrode and electrode and the electrode they is separated to constitute insulation, that is to say when machine-shaping, form in injection before the plastic cement of packing colloid, at first fix the relative position of fin and electrode, when carrying out injection moulding, plastic cement has formed set profile and again between electrode and the fin and the space between electrode and the electrode has been filled and make their position relative fixed and cut off them in the shape chamber.
Certain function in order to realize powering and dispelling the heat, the lower surface of the heat dissipation region of fin and electrode expose outside packing colloid away from an end of fin.
What need explanation a bit is, the material of employed plastic cement and electrode, fin should make them have good binding, making packing colloid and fin, electrode all constitute air-tightness is combined, so-called air-tightness is to have bubble-tightly in conjunction with the combination interface that refers to both, and gas is to spread by interface between the two.
Packing colloid is formed with a reflection hole above the fin heat dissipation region after injection moulding is finished, this reflection hole is mainly used in providing for the colloidal silica injection part of space and then formation reflector.
In case carry out the some glue of silica gel, so whole processing technology just is through with, therefore need be before forming colloidal silica, carry out work such as led chip is fixed, electrode wiring, in order to finish these work, the heat dissipation region of fin and electrode all expose outside packing colloid by reflection hole near an end of fin, so after the injection moulding that finishes packing colloid, both can implement above work, at first led chip is fixed on the upper surface of heat dissipation region, led chip utilizes gold thread to realize being electrically connected with the part of electrode in reflection hole then.After finishing these work, the some glue that can carry out silica gel forms colloidal silica.
The silica gel that forms colloidal silica is filled reflection hole, and then the part that will expose outside packing colloid by reflection hole just now covers and then realize encapsulation.After filling finishes, owing to also constituting air-tightness with packing colloid, colloidal silica is combined, so they are sealed in inside with led chip completely.
As a kind of preferred version, reflection hole is up big and down small, and it is the truncated cones body opening, and the part that colloidal silica exposes outside the packing colloid is the part of spheroid.
The heat that led chip produces pass to fin, and the lower surface of fin heat dissipation region exposes outside packing colloid, so its radiator structure with the external world contacts, and can increase the efficient of heat radiation greatly.As preferably, in order to obtain bigger area of dissipation, the lower surface that exposes packing colloid of heat dissipation region be shaped as the rectangle that the summit is fillet
As a kind of preferred version, fin and electrode are made of the copper alloy of electroplate; Packing colloid forms by PPA is plastic injection-moulded, and colloidal silica adds the mixed powder injection that fluorescent material constitutes by transparent silica gel and forms.Through we carrier structure of the present utility model was boiled 3-5 hour with red ink+alcohol (1:1) and be the discovery seepage can prove that the air-tightness of their combinations is reliable.
Concrete scheme as preferred version, PPA plastics in the utility model can adopt high temperature resistant xanthochromia plastic resin, the PPA plastics that it is PPA114HQ that specific product can adopt the Japanese model of tomb company greatly are as raw material, its characteristics are to be difficult for the state that jaundice still can keep ultrawhite under hot environment, make its reflecting effect better.
In addition, itself can form the ledge structure of bending fin and electrode, is conducive to so more when injection mo(u)lding and the combination of PPA plastics, guarantees air-tightness.
More than show and described basic principle of the present utility model, principal character and advantage.The technical staff of the industry should understand, and above-described embodiment does not limit the utility model in any form, and all employings are equal to replaces or technical scheme that the mode of equivalent transformation obtains, all drops in the protection range of the present utility model.

Claims (9)

1. the high brightness LED chip carrier structure that has strong heat sinking function, comprise: a plurality of led chips, it is characterized in that, also comprise: fin, be arranged at the electrode of the above-mentioned fin left and right sides respectively, be used for above-mentioned heat sink and as a whole packing colloid and the colloidal silica of electrode package; Being formed centrally downward depression in the above-mentioned fin has heat dissipation region, and above-mentioned led chip is fixed on the upper surface of above-mentioned heat dissipation region; Above-mentioned packing colloid is filled in and in the slit between above-mentioned fin and electrode and electrode and the electrode they is separated to constitute insulation, and above-mentioned packing colloid all constitutes air-tightness with above-mentioned fin, electrode, colloidal silica and is combined; The lower surface of the heat dissipation region of above-mentioned fin and above-mentioned electrode expose outside above-mentioned packing colloid away from an end of above-mentioned fin, above-mentioned packing colloid is formed with a up big and down small reflection hole above above-mentioned led chip, the heat dissipation region of above-mentioned fin and above-mentioned electrode all expose outside above-mentioned packing colloid by above-mentioned reflection hole near an end of above-mentioned fin, above-mentioned led chip is electrically connected by the gold thread formation of passing above-mentioned colloidal silica with the end of above-mentioned electrode near above-mentioned fin, and above-mentioned reflection hole is filled sealing by above-mentioned colloidal silica.
2. the high brightness LED chip carrier structure with strong heat sinking function according to claim 1 is characterized in that, the number of the chip of above-mentioned LED is 3.
3. the high brightness LED chip carrier structure with strong heat sinking function according to claim 2 is characterized in that, the chip of above-mentioned LED is respectively red LED chip, blue-light LED chip and green light LED chip.
4. the high brightness LED chip carrier structure with strong heat sinking function according to claim 3 is characterized in that, the number of above-mentioned electrode is 6, and corresponding and above-mentioned led chip formation is electrically connected in twos respectively.
5. the high brightness LED chip carrier structure with strong heat sinking function according to claim 1 is characterized in that, above-mentioned reflection hole is the truncated cones body opening.
6. the high brightness LED chip carrier structure with strong heat sinking function according to claim 1 is characterized in that, the lower surface that exposes above-mentioned packing colloid of above-mentioned heat dissipation region be shaped as the rectangle that the summit is fillet.
7. the high brightness LED chip carrier structure with strong heat sinking function according to claim 1 is characterized in that, the part that above-mentioned colloidal silica exposes outside the above-mentioned packing colloid is the part of spheroid.
8. according to any described high brightness LED chip carrier structure with strong heat sinking function of claim 1 to 6, it is characterized in that above-mentioned fin and/or electrode are made of the copper alloy of electroplate.
9. according to any described high brightness LED chip carrier structure with strong heat sinking function of claim 1 to 6, it is characterized in that above-mentioned packing colloid forms by PPA is plastic injection-moulded.
CN 201320052023 2013-01-30 2013-01-30 High-brightness LED chip carrier structure having strong heat radiation function Expired - Fee Related CN203205462U (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103066196A (en) * 2013-01-30 2013-04-24 江苏华英光宝科技股份有限公司 High-brightness light-emitting diode (LED) chip carrier structure with powerful heat dissipation function

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103066196A (en) * 2013-01-30 2013-04-24 江苏华英光宝科技股份有限公司 High-brightness light-emitting diode (LED) chip carrier structure with powerful heat dissipation function
CN103066196B (en) * 2013-01-30 2015-10-28 江苏华英光宝科技股份有限公司 There is the high brightness LED chip carrier structure of strong heat sinking function

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130918

Termination date: 20160130

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