CN203192848U - 发光二极管装置 - Google Patents

发光二极管装置 Download PDF

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CN203192848U
CN203192848U CN2013201300786U CN201320130078U CN203192848U CN 203192848 U CN203192848 U CN 203192848U CN 2013201300786 U CN2013201300786 U CN 2013201300786U CN 201320130078 U CN201320130078 U CN 201320130078U CN 203192848 U CN203192848 U CN 203192848U
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emitting diode
planar structure
light
substrate
conductive part
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安国顺
张道锋
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Goertek Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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Abstract

一种发光二极管装置,包括:金属基板,所述金属基板包括有与外界电路正负极电连接的第一导电部、第二导电部以及将第一第二导电部绝缘隔开的绝缘部;发光二极管芯片,所述发光二极管芯片设置在所述基板上,所述发光二极管芯片通过金属引线与所述导电部电连接;并且:所述金属基板包括第一平面结构和第二平面结构,所述第二平面结构的基板厚度小于所述第一平面结构的基板厚度,所述第一平面结构与所述第二平面结构之间设置有侧壁,所述绝缘部设置于所述第一平面结构与所述侧壁之间,所述发光二极管芯片设置于所述基板第二平面结构本实用新型发光二极管装置具有可靠性高的优点。

Description

发光二极管装置
技术领域
本实用新型涉及发光二极管,尤其是涉及一种可靠性高的发光二极管装置。
背景技术
发光二极管(Light Emitting Diode,LED)作为一种绿色光源,具有发光效率高、耗电量少、使用寿命长、安全可靠和有利于环保的优点,被广泛应用于照明和背光领域。随着科技的发展,人们对发光二极管装置的要求也越来越高,LED装置的可靠性也越来越受到人们的关注。
现有技术的LED,如图1所示,包括基板,支架2,LED芯片3及荧光胶4,支架2和基板构成LED碗杯结构,基板上设置有与外部电路电连接的金属导电部。产品为提升亮度基本都采用二阶碗杯结构,即在基板包括第一平面结构11以及第二平面结构12,第二平面结构12的基板厚度小于第一平面结构11,形成二阶碗杯,第一平面结构11与第二平面结构12之间设置有侧壁13。传统技术的LED,绝缘部5设置于第一平面结构11上,将金属基板分为两部分导电部,如图1所示,绝缘部5与侧壁13之间还包括一部分第一平面结构11的金属基板,设置于金属基板二阶碗杯内的LED芯片3通过金属引线与基板上金属导电部电连接,如图1中Ⅰ部分所示,由于金属引线本身线径较细硬度不强和线弧过长的特点,使得在实际生产中容易出现因灌胶或震动导致金属引线受力凹陷的现象,后期用户使用也存在由于外力或温度变化产生应力致使金属引线变形塌线,从而金属引线接触LED两部分导电部,形成短路,对发光二极管可靠性造成影响。
因此,有必要提供一种改进,以克服现有技术发光二极管装置的缺陷。
实用新型内容
本实用新型所要解决的技术问题是提供一种可靠性高的发光二极管装置。
为了实现上述目的,本实用新型采用以下技术方案:
一种发光二极管装置,包括:金属基板,所述金属基板包括有与外界电路正负极电连接的第一导电部、第二导电部以及将第一第二导电部绝缘隔开的绝缘部;支架,所述支架形成内凹开口并与所述基板配合形成所述发光二极管装置碗杯结构; 发光二极管芯片,所述发光二极管芯片设置在所述基板上,所述发光二极管芯片通过金属引线与所述导电部电连接;荧光胶,所述荧光胶包覆所述发光二极管芯片,并填充所述发光二极管碗杯结构;并且:所述金属基板包括第一平面结构和第二平面结构,所述第二平面结构的基板厚度小于所述第一平面结构的基板厚度,所述第一平面结构与所述第二平面结构之间设置有侧壁,所述绝缘部设置于所述第一平面结构与所述侧壁之间,所述发光二极管芯片设置于所述基板第二平面结构。
作为一种优选的技术方案,所述金属引线在所述绝缘部上方打线,跨越所述绝缘部与所述导电部电结合。
作为一种优选的技术方案,所述发光二极管芯片为平行电极芯片或垂直电极芯片。
本实用新型发光二极管装置,金属基板上设置第一平面结构和第二平面结构,第二平面结构的基板厚度小于第一平面结构,形成二阶碗杯,第二平面结构与第一平面结构之间设置有侧壁,绝缘部设置于第一平面结构与侧壁之间。当发光二极管装置使用时金属引线发生塌陷时,金属引线与第一平面结构以及绝缘部接触,避免传统结构金属引线塌陷时连通两部分基板导电部而引起短路,提高发光二极管装置可靠性。
附图说明
图1为传统结构发光二极管装置剖视图。
图2为本实用新型发光二极管装置剖视图。
具体实施方式
下面结合附图,详细说明本实用新型发光二极管结构。
如图2所示,本实用新型发光二极管装置,包括:金属基板、支架2、发光二极管芯片3以及荧光胶4;支架2形成内凹开口并与金属基板形成发光二极管装置的碗杯结构,发光二极管芯片3设置于碗杯结构内,荧光胶4涂覆发光二极管芯片3并填充碗杯结构。金属基板包括第一平面结构11和第二平面结构12,第二平面结构12的基板厚度小于第一平面结构11的基板厚度,第一平面结构11和第二平面结构12之间设置有侧壁13,第二平面结构12和侧壁13形成二阶碗杯,发光二极管芯片3设置于二阶碗杯内,基板上绝缘部5设置于基板第一平面结构11和侧壁13之间,绝缘部5将金属基板绝缘分割成第一导电部和第二导电部,设置于二阶碗杯内的发光二极管芯片3通过金属引线分别与设置于第一平面结构11上的第一导电部和设置于第二平面结构12上的第二导电部电结合,其中,电结合发光二极管芯片3与第一导电部的金属引线引出二阶碗杯并跨越绝缘部5。
本实用新型发光二极管装置,绝缘部5设置于基板第一平面结构11与基板侧壁13之间,金属引线跨越绝缘部5,即使金属引线发生塌陷,金属引线接触第一导电部与绝缘部5,而不是与将第一导电部与第二导电部连接引起短路,避免了金属引线塌陷引起的短路,提高发光二极管装置的可靠性。
作为可能的技术方案,本实用新型发光二极管芯片3可以为平行电极芯片或垂直电极芯片。发光二极管芯片3为平行电极芯片时,通过两条金属引线分别与第一导电部和第二导电部电连接;发光二极管芯片3为垂直电极芯片时,发光二极管芯片3通过直接接触与第二导电部电连接,通过金属引线与第一导电部电连接。
以上仅为本实用新型实施案例而已,并不用于限制本实用新型,但凡本领域普通技术人员根据本实用新型所揭示内容所作的等效修饰或变化,皆应纳入权利要求书中记载的保护范围内。

Claims (3)

1.一种发光二极管装置,包括:
金属基板,所述金属基板包括有与外界电路正负极电连接的第一导电部、第二导电部以及将第一第二导电部绝缘隔开的绝缘部;
支架,所述支架形成内凹开口并与所述基板配合形成所述发光二极管装置碗杯结构; 
发光二极管芯片,所述发光二极管芯片设置在所述基板上,所述发光二极管芯片通过金属引线与所述导电部电连接;
荧光胶,所述荧光胶包覆所述发光二极管芯片,并填充所述发光二极管碗杯结构;
其特征在于:所述金属基板包括第一平面结构和第二平面结构,所述第二平面结构的基板厚度小于所述第一平面结构的基板厚度,所述第一平面结构与所述第二平面结构之间设置有侧壁,所述第二平面结构形成基板二阶碗杯结构,所述绝缘部设置于所述第一平面结构与所述侧壁之间,所述发光二极管芯片设置于所述基板第二平面结构。
2.根据权利要求1所述的发光二极管装置,其特征在于:所述金属引线在所述绝缘部上方打线,所述金属引线跨越所述绝缘部与所述导电部电结合。
3.根据权利要求1所述的发光二极管装置,其特征在于:所述发光二极管芯片为平行电极芯片或垂直电极芯片。
CN2013201300786U 2013-03-21 2013-03-21 发光二极管装置 Expired - Lifetime CN203192848U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531866A (zh) * 2016-12-19 2017-03-22 东莞中之光电股份有限公司 发光二极管封装结构

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531866A (zh) * 2016-12-19 2017-03-22 东莞中之光电股份有限公司 发光二极管封装结构

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Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268

Patentee after: GOERTEK Inc.

Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268

Patentee before: Goertek Inc.

CX01 Expiry of patent term

Granted publication date: 20130911

CX01 Expiry of patent term