CN203192796U - 发光二极管装置 - Google Patents

发光二极管装置 Download PDF

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Publication number
CN203192796U
CN203192796U CN2013201302546U CN201320130254U CN203192796U CN 203192796 U CN203192796 U CN 203192796U CN 2013201302546 U CN2013201302546 U CN 2013201302546U CN 201320130254 U CN201320130254 U CN 201320130254U CN 203192796 U CN203192796 U CN 203192796U
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emitting diode
light
backlight unit
substrate
heat
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张道锋
安国顺
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Goertek Inc
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Goertek Inc
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED

Abstract

本实用新型公开了一种发光二极管装置,包括:基板,所述基板包括导热导电部及绝缘部;发光二极管芯片,所述发光二极管芯片固定于所述基板导热导电部,并与所述导热导电部电连接;荧光胶,所述荧光胶包括封装胶和荧光粉,所述荧光胶包覆所述发光二极管芯片;并且:所述基板为平板结构,所述发光二极管芯片固定于所述平板结构的基板上。本实用新型发光二极管装置具有发光角度大,集成化好的优点。

Description

发光二极管装置
技术领域
[0001] 本实用新型涉及发光二极管装置,尤其涉及一种出光角度大,集成化好的发光二
极管装置。
背景技术
[0002] 发光二极管(Light Emitting Diode, LED)作为一种绿色光源,具有发光效率高、耗电量少、使用寿命长、安全可靠和有利于环保的优点,被广泛应用于照明和背光领域。随着科技的发展,人们对发光二极管装置的要求也越来越高,小型化、大出光角度以及高亮度成为LED的发展趋势。
[0003] 现有技术的发光二极管装置,包括基板、支架、LED芯片及荧光胶;支架与基板形成碗杯结构,LED芯片设置于碗杯结构内,荧光胶涂覆LED芯片并填充碗杯结构。这种结构的发光二极管装置,碗杯结构对LED芯片发出光线产生了阻挡,使发光二极管装置出光角度受到限制。同时,在实际应用中,常常遇到需多个发光二极管装置组合的情况,以满足发光亮度、功率等方面的要求,传统结构的发光二极管装置,受产品型号的影响,发光二极管装置的易组装性受到限制。
[0004] 因此,有必要提出一种改进,以克服传统结构发光二极管装置的缺陷。
实用新型内容
[0005] 本实用新型所要解决的技术问题是提供一种发光角度大,集成化好的发光二极管
>J-U装直。
[0006] 为了实现上述目的,本实用新型采用以下技术方案:一种发光二极管装置,包括:基板,所述基板包括导热导电部及绝缘部;发光二极管芯片,所述发光二极管芯片固定于所述基板导热导电部,并与所述导热导电部电连接;荧光胶,所述荧光胶由封装胶和荧光粉混合而成,所述荧光胶包覆所述发光二极管芯片;并且:所述基板为平板结构,所述发光二极管芯片固定于所述平板结构的基板上。
[0007] 作为一种优选的技术方案,所述发光二极管芯片为多个,所述基板导热导电部也为多个,所述多个导热导电部之间由所述绝缘部绝缘设置。
[0008] 作为一种进步优选,所述多个发光二极管芯片采用串联、并联或串并混联的方式电连接。
[0009] 作为另一种优选的技术方案,所述发光二极管芯片为平行电极芯片、垂直电极芯片和倒装电极芯片中的一种。
[0010] 作为另一种优选的技术方案,所述导热导电部为金属。
[0011] 本实用新型发光二极管装置,发光二极管芯片设置于平板结构的基板上,可以有效提高发光二极管出光角度,平板结构的基板使发光二极管装置在多个结构配合使用时更易组装,提闻集成化。附图说明
[0012] 图1为本实用新型发光二极管装置整体封装结构俯视图。
[0013] 图2为本实用新型发光二极管装置一个发光二极管结构剖视图。
[0014] 图3为本实用新型发光二极管装置一个实施例俯视图。
[0015] 图4为本实用新型发光二极管装置另一个实施例俯视图。
[0016] 图5A至图为本实用新型发光二极管装置制造方法示意图。
具体实施方式
[0017] 下面结合附图,详细说明本实用新型具体结构。
[0018] 如图1至图4所示,本实用新型发光二极管装置,包括:由导热导电部11和绝缘部12构成的基板,导热导电部11包括两部分,两部分导热导电部11通过绝缘部12绝缘设置;发光二极管芯片2,发光二极管芯片2设置于导热导电部11上,发光二极管芯片2的两个导电电极分别与两部分导热导电部11电连接。如图2所示,本实用新型发光二极管装置还包括荧光胶3,荧光胶3涂覆于基板固定有发光二极管芯片2的一侧,荧光胶3包覆发光二极管芯片2 ;荧光胶3包括荧光粉和封装胶,发光二极管芯片2发出的光经荧光胶3内荧光粉反射,发出需要光色。如图1至图4所示,本实用新型发光二极管装置基板为平面结构,发光二极管芯片直接固定于平面结构的基板上,没有传统结构发光二极管的碗杯结构,可以有效提高发光二极管装置的发光角度。
[0019] 如图3所示,本实用新型发光二极管装置的一个实施例,包括多个发光二极管芯片2,多个发光二极管芯片2通过串联的方式电连接,多个发光二极管芯片2对应设置于多个基板导热导电部11上,多个导热导电部11之间横向排列,多个导热导电部11之间通过绝缘部12绝缘设置。
[0020] 如图4所示,本实用新型发光二极管装置的另一个实施例,包括多个发光二极管芯片2,多个发光二极管芯片2之间通过并联的方式电连接,多个发光二极管芯片2对应设置于多个基板导热导电部11上,多个导热导电部11纵向排列,导热导电部11之间通过绝缘部12绝缘设置。
[0021] 作为另一种实施例,本实用新型发光二极管装置,包括多个发光二极管芯片,多个发光二极管芯片之间采用串并混联的方式电连接。
[0022] 发光二极管装置设置多个发光二极管芯片,可以满足外部电路对发光二极管装置电压、电流或功率的要求,提高发光二极管装置的应用范围,满足实际应用中对发光二极管装置的需要。
[0023] 本实用新型发光二极管装置的制造方法,包括如下步骤:
[0024] I)如图5A所示,提供一种基板,所述基板包括由导热导电部11及绝缘部12组成的底部,以及侧壁4,侧壁4和底部构成碗杯结构;如图1所示,基板上导热导电部11采用格栅的方式排布,导热导电部11之间由绝缘部12绝缘隔开;
[0025] 2)如图5B所示,将发光二极管芯片2固定于导热导电部11上,并将发光二极管芯片2的两个导电电极分别与相邻的两个导热导电部11电连接。本实施例中,发光二极管芯片2为平行电极芯片,发光二极管芯片2与两个导热导电部11之间均采用金属引线5电连接,应当知晓,在实际制造过程中,发光二极管芯片还可能为垂直电极芯片或倒装芯片,发光二极管芯片可以采用其他对应方式与导热导电部电连接,也属于本实用新型发光二极管装置及其制造方法所揭示的范围;
[0026] 3 )如图5C所示,在基板碗杯结构内涂荧光胶3,荧光胶3根据发光二极管装置发光需要,由荧光粉和封胶状混合而成,荧光胶3包覆发光二极管芯片2并填充基板碗杯结构;将涂覆完荧光胶3的发光二极管装置进行烘烤,使荧光胶3凝固;
[0027] 4)如图所示,将固胶完成的基板进行切割,切除基板侧壁,并根据发光二极管生产需要对基板进行切割。
[0028] 本实用新型发光二极管装置的制造方法,采用模块化制造,先将多个发光二极管芯片固定于一个大的基板上,然后进行整体点胶封装、烘烤,之后根据需要进行切割,并切除基板侧壁,避免侧壁对发光二极管发光角度的限制。模块化生产的发光二极管,生产效率高,同时可以根据需要,灵活地对发光二极管模块进行切割,切割形成的发光二极管装置相互进行集成化组合时也更简便,产品集成化好。
[0029] 作为一种优选的技术方案,本实用新型发光二极管装置导热导电部为金属结构,发光二极管芯片固定于金属结构的导热导电部上,有利于热量的散发,提高发光二极管装置的散热效果。
[0030] 以上仅为本实用新型实施案例而已,并不用于限制本实用新型,但凡本领域普通技术人员根据本实用新型所揭示内容所作的等效修饰或变化,皆应纳入权利要求书中记载的保护范围内。

Claims (5)

1.一种发光二极管装置,包括: 基板,所述基板包括导热导电部及绝缘部; 发光二极管芯片,所述发光二极管芯片固定于所述基板导热导电部,并与所述导热导电部电连接; 荧光胶,所述荧光胶包括封装胶和荧光粉,所述荧光胶包覆所述发光二极管芯片; 其特征在于:所述基板为平板结构,所述发光二极管芯片固定于所述平板结构的基板上。
2.根据权利要求1所述的发光二极管装置,其特征在于:所述发光二极管芯片为多个,所述基板导热导电部也为多个,所述多个导热导电部之间由所述绝缘部绝缘设置。
3.根据权利要求2所述的发光二极管装置,其特征在于:所述多个发光二极管芯片采用串联、并联或串并混联的方式电连接。
4.根据权利要求1所述的发光二极管装置,其特征在于:所述发光二极管芯片为平行电极芯片、垂直电极芯片和倒装电极芯片中的一种。
5.根据权利要求1所述的`发光二极管装置,其特征在于:所述导热导电部为金属。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219329A (zh) * 2013-03-21 2013-07-24 歌尔声学股份有限公司 发光二极管装置及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219329A (zh) * 2013-03-21 2013-07-24 歌尔声学股份有限公司 发光二极管装置及其制造方法

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Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268

Patentee after: Goertek Inc.

Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268

Patentee before: Goertek Inc.