CN203134855U - Power mode LED structure with excellent heat radiation and high color rendering index - Google Patents
Power mode LED structure with excellent heat radiation and high color rendering index Download PDFInfo
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- CN203134855U CN203134855U CN 201320014697 CN201320014697U CN203134855U CN 203134855 U CN203134855 U CN 203134855U CN 201320014697 CN201320014697 CN 201320014697 CN 201320014697 U CN201320014697 U CN 201320014697U CN 203134855 U CN203134855 U CN 203134855U
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Abstract
A power mode LED structure with excellent heat radiation and high color rendering index comprises a high heat conduction substrate, a high heat radiation material block, a large power LED chip and a packaging assembly, wherein the high heat conduction substrate is provided with a blind hole, and the high heat radiation material block is arranged in the blind hole and is bonded with the high heat conduction substrate in one body through high heat conduction binder. The power mode LED structure with excellent heat radiation and high color rendering index employs the high heat conduction substrate and the high heat radiation material block to commonly form the large power LED chip heat radiation base structure, wherein the high heat radiation material block is arranged in the blind hole of the high heat conduction substrate and is tightly cooperated with the high heat conduction substrate, so the heat radiation base is excellent in whole body heat conduction and heat radiation performance; and heat generated by the large power LED chip can be fast and effectively conducted and radiated from a work zone through the heat radiation base, thereby effectively reducing section temperature, greatly improving stability and reliability of the large power LED chip, enabling the large power LED chip to continuously work in a long term under large current, and prolonging service life of the LED.
Description
Technical field
The utility model relates to the high-power LED illumination technical field, specifically relates to a kind of have good heat radiating and high color rendering index (CRI) power-type LED structure.
Background technology
LED is the luminescent device that a class can directly be converted into electric energy visible light and radiant energy, have that operating voltage is low, power consumption is little, luminous efficiency is high, extremely short, photochromic pure, the sound construction of emission response time, shock resistance, vibration resistance, stable and reliable for performance, in light weight, plurality of advantages such as volume is little, cost is low, being applied in the fields such as illumination and decorative lamp more and more widely.
The large power white light LED that generally adopts mainly is the method for packing realization of coating fluorescent powder on blue-light LED chip at present, but the applied thickness of fluorescent material and shape are difficult to control in this encapsulation process, cause LED device colour temperature inhomogeneous, even the angle colour temperature difference of single LEDs can arrive 800K greatly, and the colour temperature difference that human eye can be differentiated is 50-100K.In addition, existing LED product generally adopts led light source directly according to the target location, but because of LED direct projection light inhomogeneous, the intense stimulus human eye, have a strong impact on the illuminating effect of LED light fixture, cause eye fatigue even eyesight to descend the glare problem that Here it is faces at present easily
Equally, the relation of color rendering index and colour temperature is very close in the LED lighting, sunlight and incandescent lamp give off contact spectrum, belong in the visible wavelength range, object is exported the color that really is earlier under the irradiation of light, color rendering index is exactly to wake up with a start quantitative assessment for the color rendering to light source, it is to be as the criterion with standard sources, and basic value fixes on 100, and unit is RA.Light source is big for the influence of color rendering index and requirement at lighting, because white light LEDs technology color rendering technology is immature, so also is why LED is as lighting source, though the main cause that can't obtain promoting with the obvious advantage.Adding lacking of red-green glow composition, congenital just to the color rendering index shortage, restriction LED can't become more senior lighting source.
Except the influence of above-mentioned colour temperature and color rendering index, the variations injunction temperature of led chip influences photoelectricity colourity such as its light extraction efficiency, light decay, color, wavelength and forward voltage and electric parameter etc., influences life-span and the reliability of device.Inside and outside increasing it, effort increases its input current method of the most effective raising brightness beyond doubt in the light extraction efficiency, but the increase that is accompanied by electric current can produce a large amount of heat energy, its luminous efficiency of led chip joint temperature rise descends thereupon, brightness increases and the contradiction of joint temperature rise in order to solve, realize high brightness, the high stability of LED, the solution of great power LED cooling problem becomes the task of top priority.In the existing high-power LED encapsulation structure, led chip generally all is fixed on the metal base, and the heat that chip produces is passed on the pedestal earlier.The thermal conductivity of metal material is good, but heat dispersion is not good, as in order to make the aluminium of metal base, thermal emissivity rate is 0.05, the heat that distributes by thermal radiation seldom can only adopt convection type to distribute most of heat.For this reason, generally need connect heat sink (radiator) to reach the heat radiation purpose at metal base, need to add forced convection device quickening cross-ventilations such as fan sometimes.In the application product overall thermal resistance, the thermal resistance between the heat sink and external environment condition is very important part, has directly influenced the variation of led chip joint temperature.
The patent No. is that the Chinese patent of ZL201020165179.3 discloses " a kind of LED encapsulating structure ", the substrate that this encapsulating structure adopts is the BT plate, and the BT plate also claims the copper-clad plate of BT resin-based, namely cover layer of copper as circuit at resin, resin is used for heat radiation, covering copper is as circuit, and its thermal conductivity is approximately 16.5W/mK, and heat conduction and radiating effect are relatively poor; The highly heat-conductive material that this encapsulating structure adopts is Heat Conduction Materials such as copper or pottery, but the thermal conductivity of copper is approximately 397W/mK, and the thermal conductivity of pottery is approximately 319W/mK, so its heat conduction and radiating effect are relatively poor equally; Fixing and the protective material of the led chip that this encapsulating structure adopts is high-temp glue, this high-temp glue can be simultaneously as the heat sink material of led chip, but this high-temp glue can't be adjusted rising angle, improves light extraction efficiency; This encapsulating structure adopts and embed a highly heat-conductive material in through hole, original BT plate is just very thin, cause the contact area of highly heat-conductive material and BT plate quite little, the heat that led chip passes to highly heat-conductive material is difficult to pass on the BT plate efficiently shed again, the shape that adds through hole and highly heat-conductive material is difficult to fit like a glove, so just reduced the conduction of heat further, so the heat of highly heat-conductive material can only pass in the air that is in contact with it the area maximum, thereby the radiating effect that causes substrate to play is very little, has so just greatly reduced the speed of distributing of heat.
Summary of the invention
The purpose of this utility model is at above-mentioned existing problems and deficiency, provide a kind of heat that can be fast and effeciently high-power LED chip be produced to derive from the service area and distribute and improve the color rendering index of emergent light and the uniformity of colour temperature, stability and the reliability of high-power LED chip are greatly strengthened, can be under big electric current continuous operation have good heat radiating and a high color rendering index (CRI) power-type LED structure.
The technical solution of the utility model is achieved in that
Described in the utility model have good heat radiating and a high color rendering index (CRI) power-type LED structure, be characterized in comprising high thermal conductive substrate, high heat sink material piece, high-power LED chip and package assembling, offer blind hole on the wherein said high thermal conductive substrate, described high heat sink material piece is installed in this blind hole and by high heat conduction binding agent and high thermal conductive substrate and is bonded as one, and described high-power LED chip is fitted on the high heat sink material piece.
Wherein, the blind hole of offering on the above-mentioned high thermal conductive substrate is for trapezoidal, it is smooth that this falls bottom surface and the flat side down of trapezoidal blind hole, being shaped as and falling trapezoidal that trapezoidal blind hole the latter half coincide of above-mentioned high heat sink material piece, and the upper and lower surface of high heat sink material piece is all smooth smooth.
Above-mentioned high heat sink material piece is made by diamond film or diamond-film-like or graphite or graphite film, and the thickness of this high heat sink material piece is 1.0mm～1.5mm, and the thermal conductivity of this high heat sink material piece is 700 W/mK～2000 W/mK.
Above-mentioned high thermal conductive substrate is made by copper or aluminium or pottery.
Above-mentioned high heat conduction binding agent is silver-colored slurry or scolding tin or diamond particle heat-conducting cream.
Be coated with one deck on the surface of above-mentioned blind hole the first half and can play the silver layer of reflector effect.
Above-mentioned high-power LED chip is fitted on the high heat sink material piece by the silver slurry.
Above-mentioned package assembling comprises and is fixed on being used on the high thermal conductive substrate lens of the opening sealing of blind hole and can are used for silica gel fixing and protection high-power LED chip and raising light sending efficiency of high power LED chip between lens and high heat sink material piece; be provided with a transparent optical transition material in the described silica gel; described transparent optical transition material comprises the yellow fluorescent material layer; transparent material layer and red fluorescence material layer; wherein said transparent material layer is transparent material layers such as glass or pottery or resin or quartz or film or zinc oxide or sapphire or diamond or the transparent material layer that is compounded to form by above one or more materials or the high heat conductive transparent material layer that is compounded to form by above material and Nano diamond particle; and described transparent material layer is flat or crooked; the surface of described transparent material layer is shiny surface or matsurface or is etched various geometric or be forced out various geometric that the wherein one side of the upper and lower surface of described transparent material layer scribbles the yellow fluorescent material layer; another side scribbles the red fluorescence material layer.
The utility model is owing to adopted high thermal conductive substrate and be arranged in the blind hole of high thermal conductive substrate and form the structure of high-power LED chip cooling base jointly with the close-fitting high heat sink material piece of high thermal conductive substrate, make whole heat conduction and the heat dispersion of this cooling base superior, and the contact area of high heat sink material piece and high thermal conductive substrate is big, therefore the heat that can fast and effeciently high-power LED chip be produced by this cooling base is derived from the service area and is distributed, reach the purpose of good heat dissipation effect, thereby can either reduce the joint temperature effectively, stability and the reliability of high-power LED chip are strengthened greatly, can make high-power LED chip under big electric current, work long service life continuously for a long time again.Simultaneously, because high heat sink material piece is made by diamond film or diamond-film-like or graphite or graphite film, its thermal conductivity is far above Heat Conduction Materials such as copper used in the prior art or potteries, therefore its heat that can fast high-power LED chip be produced is derived, reduce junction temperature, improve the luminous efficiency of high-power LED chip.And because high thermal conductive substrate is made by copper or aluminium or pottery, its thermal conductivity is higher than BT plate used in the prior art far away, so its heat dispersion can be increased dramatically.And, because being used for the high heat conduction binding agent of connection high thermal conductive substrate and high heat sink material piece is silver-colored slurry or scolding tin or diamond particle heat-conducting cream, fix and fill gap between high thermal conductive substrate and the high heat sink material piece by this high heat conduction binding agent, thereby promoted the heat dispersion of cooling base further.Owing to be coated with the silver layer that one deck can play the reflector effect on the inclined-plane of blind hole the first half, improve the light extraction efficiency of high-power LED chip by this silver layer again.In addition, owing to adopted the transparent optical transition material in the package assembling, this transparent optical transition material is to apply uniform yellow fluorescent material and red fluorescence material respectively in the transparent material upper and lower surface, not only can make the photochromic temperature of outgoing more even by the transparent optical transition material, simultaneously can also improve color rendering index, thereby effectively solve problems such as dazzle and color rendering index are low.And the utility model also has advantages such as simple and reliable for structure, easily manufactured, that appearance and modeling is flexible and changeable.
Below in conjunction with accompanying drawing the utility model is further described.
Description of drawings
Fig. 1 is cross-sectional view of the present utility model.
Embodiment
As shown in Figure 1, described in the utility model have good heat radiating and a high color rendering index (CRI) power-type LED structure, comprise high thermal conductive substrate 1, high heat sink material piece 2, high-power LED chip 3 and package assembling 4, offer blind hole 11 on the wherein said high thermal conductive substrate 1, described high heat sink material piece 2 is installed in this blind hole 11 and by high heat conduction binding agent 5 and is bonded as one with high thermal conductive substrate 1, and described high-power LED chip 3 is fitted on the high heat sink material piece 2.Wherein, the blind hole of offering on the above-mentioned high thermal conductive substrate 1 11 is for trapezoidal, it is smooth that this falls bottom surface and the flat side down of trapezoidal blind hole 11, being shaped as and falling trapezoidal that trapezoidal blind hole 11 the latter halfs coincide of above-mentioned high heat sink material piece 2, and the upper and lower surface of high heat sink material piece 2 is all smooth smooth.Above-mentioned high heat sink material piece 2 is made by diamond film or diamond-film-like or graphite or graphite film.When high heat sink material piece 2 was made by diamond-film-like, this diamond-film-like can adopt microwave plasma CVD method or chemical vapour deposition technique or flame combustion process or physical vaporous deposition or chemical gaseous phase conveying method or ion beam depositing method or laser chemical vapor deposition method to make high heat sink material piece 2.And the thickness of above-mentioned high heat sink material piece 2 is 1.0mm～1.5mm.The thermal conductivity of above-mentioned high heat sink material piece 2 is 700 W/mK～2000 W/mK.Above-mentioned high thermal conductive substrate 1 is made by copper or aluminium or pottery.Above-mentioned high heat conduction binding agent 5 is silver-colored slurry or scolding tin or diamond particle heat-conducting cream.Be coated with one deck on the surface of above-mentioned blind hole 11 the first half and can play the silver layer 6 of reflector effect.Above-mentioned high-power LED chip 3 is fitted on the high heat sink material piece 2 by the silver slurry.Above-mentioned package assembling 4 comprises and is fixed on being used on the high thermal conductive substrate 1 lens 41 of the opening sealing of blind hole 11 and can are used for silica gel 42 fixing and protection high-power LED chip 3 and raising high-power LED chip 3 light extraction efficiencies between lens 41 and high heat sink material piece 2; be provided with a transparent optical transition material 43 in the described silica gel 42; described transparent optical transition material 43 comprises the yellow fluorescent material layer; transparent material layer and red fluorescence material layer; wherein said transparent material layer is transparent material layers such as glass or pottery or resin or quartz or film or zinc oxide or sapphire or diamond or the transparent material layer that is compounded to form by above one or more materials or the high heat conductive transparent material layer that is compounded to form by above material and Nano diamond particle; and described transparent material layer is flat or crooked; the surface of described transparent material layer is shiny surface or matsurface or is etched various geometric or be forced out various geometric that the wherein one side of the upper and lower surface of described transparent material layer scribbles the yellow fluorescent material layer; another side scribbles the red fluorescence material layer.Above-mentioned high thermal conductive substrate 1 is provided with insulating barrier A7, described insulating barrier A7 is provided with circuit layer 8, described circuit layer 8 is provided with insulating barrier B9 and binding post 10, above-mentioned high-power LED chip 3 is electrically connected with described binding post 10 by lead 12, described insulating barrier B9 is provided with an annular circle 13, described annular circle 13 is materials such as aluminium or resin, described annular circle 13 is mainly used in surrounding silica gel 42 and places transparent optical transition material 43, and described insulating barrier A7 can be set to the edge of high heat sink material piece 2, thereby makes described circuit layer 8 also can be set to the edge of high heat sink material piece 2.In addition, on above-mentioned high heat sink material piece 2, can place the high-power LED chip 3 of 1～10 1W, thereby make power can arrive 1～10W.
Manufacture method with good heat radiating and high color rendering index (CRI) power-type LED structure described in the utility model comprises the steps:
A, offer blind hole 11 at high thermal conductive substrate 1, this blind hole 11 can be straight hole, also can be down the hole of trapezoidal hole or other geometry, normally is arranged to down trapezoidal hole
B, at the high heat conduction binding agent 5 of high heat sink material piece 2 coatings, then high heat sink material piece 2 is put into blind hole 11, and applies certain pressure and make high heat sink material piece 2 be bonded as one by high heat conduction binding agent 5 with high thermal conductive substrate 1
C, at the surface of blind hole 11 the first half plating one deck silver layer 6, and be positioned at high thermal conductive substrate 1 on the surface of blind hole 11 open outer side insulating barrier A7, circuit layer 8, insulating barrier B9 and annular circle 13 are set from lower to upper in regular turn, and at circuit layer 8 binding post 10 is set
D, high-power LED chip 3 is fitted in high heat sink material piece 2 by silver slurry is positioned on the surface of blind hole 11, and between high-power LED chip 3 and binding post 10, lead 12 is set
E, in the blind hole 11 filling gels 42, when the full opening to annular circle 13 of silica gel 42, a transparent optical transition material 43 is placed into the opening part of annular circle 13, and lens 41 lid put on the opening of annular circle 13, can silica gel 42 in the cavity that forms between lens 41 and the transparent optical transition material 43 is then namely made and is had good heat radiating and high color rendering index (CRI) power-type LED structure.
The utility model is described by embodiment, but the utility model is not construed as limiting, with reference to description of the present utility model, other variations of the disclosed embodiments, expect easily that as the professional person for this area such variation should belong within the utility model claim restricted portion.
Claims (9)
1. one kind has good heat radiating and high color rendering index (CRI) power-type LED structure, it is characterized in that comprising high thermal conductive substrate (1), high heat sink material piece (2), high-power LED chip (3) and package assembling (4), offer blind hole (11) on the wherein said high thermal conductive substrate (1), described high heat sink material piece (2) is installed in this blind hole (11) and by high heat conduction binding agent (5) and high thermal conductive substrate (1) and is bonded as one, and described high-power LED chip (3) is fitted on the high heat sink material piece (2).
2. have good heat radiating and a high color rendering index (CRI) power-type LED structure according to claim 1 is described, the blind hole (11) that it is characterized in that offering on the above-mentioned high thermal conductive substrate (1) is for trapezoidal, it is smooth that this falls bottom surface and the flat side down of trapezoidal blind hole (11), being shaped as and falling trapezoidal that trapezoidal blind hole (11) the latter half coincide of above-mentioned high heat sink material piece (2), and the upper and lower surface of high heat sink material piece (2) is all smooth smooth.
3. have good heat radiating and a high color rendering index (CRI) power-type LED structure according to claim 1 is described, it is characterized in that above-mentioned high heat sink material piece (2) made by diamond film or diamond-film-like or graphite or graphite film, the thickness of this high heat sink material piece (2) is 1.0mm～1.5mm, and the thermal conductivity of this high heat sink material piece (2) is 700 W/mK～2000 W/mK.
4. have good heat radiating and a high color rendering index (CRI) power-type LED structure according to claim 1 is described, it is characterized in that above-mentioned high thermal conductive substrate (1) made by copper or aluminium or pottery.
5. have good heat radiating and a high color rendering index (CRI) power-type LED structure according to claim 1 is described, it is characterized in that above-mentioned high heat conduction binding agent (5) is silver-colored slurry or scolding tin or diamond particle heat-conducting cream.
6. have good heat radiating and a high color rendering index (CRI) power-type LED structure according to claim 1 is described, it is characterized in that above-mentioned high-power LED chip (3) is fitted on the high heat sink material piece (2) by the silver slurry.
7. have good heat radiating and a high color rendering index (CRI) power-type LED structure according to claim 1 is described, it is characterized in that being coated with the silver layer (6) that one deck can play the reflector effect on the surface of above-mentioned blind hole (11) the first half.
8. have good heat radiating and a high color rendering index (CRI) power-type LED structure according to claim 1 is described; it is characterized in that above-mentioned package assembling (4) comprises is fixed on being used on the high thermal conductive substrate (1) lens (41) of the opening sealing of blind hole (11) and can are used for silica gel (42) fixing and protection high-power LED chip (3) and raising high-power LED chip (3) light extraction efficiency between lens (41) and high heat sink material piece (2); be provided with a transparent optical transition material (43) in the described silica gel (42); described transparent optical transition material (43) comprises the yellow fluorescent material layer; transparent material layer and red fluorescence material layer; wherein said transparent material layer is glass or pottery or resin or quartz or film or zinc oxide or sapphire or diamond transparent material layer; and described transparent material layer is flat or crooked; the surface of described transparent material layer is shiny surface or matsurface or is etched various geometric or be forced out various geometric that the wherein one side of the upper and lower surface of described transparent material layer scribbles the yellow fluorescent material layer; another side scribbles the red fluorescence material layer.
9. have good heat radiating and a high color rendering index (CRI) power-type LED structure according to claim 1 is described, it is characterized in that above-mentioned high thermal conductive substrate (1) is provided with insulating barrier A(7), described insulating barrier A(7) is provided with circuit layer (8), described circuit layer (8) is provided with insulating barrier B(9) and binding post (10), above-mentioned high-power LED chip (3) is electrically connected with described binding post (10) by lead (12), described insulating barrier B(9) be provided with an annular circle (13), described annular circle (13) is aluminium or resin material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201320014697 CN203134855U (en) | 2013-01-11 | 2013-01-11 | Power mode LED structure with excellent heat radiation and high color rendering index |
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| CN 201320014697 CN203134855U (en) | 2013-01-11 | 2013-01-11 | Power mode LED structure with excellent heat radiation and high color rendering index |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050606A (en) * | 2013-01-11 | 2013-04-17 | 华南师范大学 | High-color-rendering high-power LED (light emitting diode) encapsulation structure and manufacture method of high-color-rendering high-power LED encapsulation structure |
| CN104425683A (en) * | 2013-08-21 | 2015-03-18 | 无锡来德电子有限公司 | LED packaging support with all-metal structure |
| CN104934516A (en) * | 2014-03-20 | 2015-09-23 | 并日电子科技(深圳)有限公司 | LED package having transparent heat insulation adhesive layer |
| CN105448860A (en) * | 2014-09-19 | 2016-03-30 | 瑞萨电子株式会社 | Semiconductor device |
| CN107785475A (en) * | 2015-07-17 | 2018-03-09 | 开发晶照明（厦门）有限公司 | Light-emitting device composite base plate and the LED module with the light-emitting device composite base plate |
| CN108538981A (en) * | 2018-03-26 | 2018-09-14 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN108715997A (en) * | 2018-06-07 | 2018-10-30 | 太原理工大学 | The preparation method of diamond film-copper heat sink compound |
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2013
- 2013-01-11 CN CN 201320014697 patent/CN203134855U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050606A (en) * | 2013-01-11 | 2013-04-17 | 华南师范大学 | High-color-rendering high-power LED (light emitting diode) encapsulation structure and manufacture method of high-color-rendering high-power LED encapsulation structure |
| CN104425683A (en) * | 2013-08-21 | 2015-03-18 | 无锡来德电子有限公司 | LED packaging support with all-metal structure |
| CN104934516A (en) * | 2014-03-20 | 2015-09-23 | 并日电子科技(深圳)有限公司 | LED package having transparent heat insulation adhesive layer |
| CN105448860A (en) * | 2014-09-19 | 2016-03-30 | 瑞萨电子株式会社 | Semiconductor device |
| CN105448860B (en) * | 2014-09-19 | 2019-06-18 | 瑞萨电子株式会社 | Semiconductor device |
| CN107785475A (en) * | 2015-07-17 | 2018-03-09 | 开发晶照明（厦门）有限公司 | Light-emitting device composite base plate and the LED module with the light-emitting device composite base plate |
| CN107785475B (en) * | 2015-07-17 | 2020-02-07 | 开发晶照明（厦门）有限公司 | Light-emitting device composite substrate and LED module with same |
| CN108538981A (en) * | 2018-03-26 | 2018-09-14 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN108715997A (en) * | 2018-06-07 | 2018-10-30 | 太原理工大学 | The preparation method of diamond film-copper heat sink compound |
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