CN202308042U - High heat dispersion packaging structure of power-type light-emitting diode (LED) - Google Patents
High heat dispersion packaging structure of power-type light-emitting diode (LED) Download PDFInfo
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- CN202308042U CN202308042U CN2011204048976U CN201120404897U CN202308042U CN 202308042 U CN202308042 U CN 202308042U CN 2011204048976 U CN2011204048976 U CN 2011204048976U CN 201120404897 U CN201120404897 U CN 201120404897U CN 202308042 U CN202308042 U CN 202308042U
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- power
- thermal conductivity
- led chip
- heat dispersion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The utility model relates to a high heat dispersion packaging structure of a power-type light-emitting diode (LED), which comprises a base, a high-power LED chip and a packaging component, wherein the base is provided with a penetrating hole which is internally provided with an insulating heat dispersion material block with high thermal conductivity; and the high-power LED chip is jointed on the insulating heat dispersion material block with high thermal conductivity. The insulating heat dispersion material block arranged in the penetrating hole of the base is adopted as a heat dissipation base of the high-power LED chip, and the high-power LED chip is directly stuck on the insulating heat dispersion material block with high thermal conductivity, so that the heat dissipation path of the high-power LED chip is very short, and the thermal resistance is obviously reduced; therefore, the heat generated by the high-power LED chip can be rapidly and effectively let out and diffused from a working area, so that the section temperature is effectively reduced, the stability and the reliability of the high-power LED chip can be greatly improved, and the service life is long; and furthermore, the high heat dispersion packaging structure is simple and reliable in structure, convenient to manufacture and flexible and changeable in appearance and shape.
Description
Technical field
The utility model relates to the high-power LED illumination technical field, is specifically related to a kind of power-type LED high heat dispersion encapsulating structure.
Background technology
LED is one type of luminescent device that can directly electric energy be converted into visible light and radiant energy; Have that operating voltage is low, power consumption is little, luminous efficiency is high, extremely short, photochromic pure, the sound construction of emission response time, shock resistance, vibration resistance, stable and reliable for performance, in light weight, plurality of advantages such as volume is little, cost is low, being applied in the fields such as illumination and decorative lamp more and more widely.
The variations injunction temperature of led chip influences photoelectricity colourities such as its light extraction efficiency, light decay, color, wavelength and forward voltage and electric parameter etc., influences the life-span and the reliability of device.Inside and outside effort increases it, increase its input current in the light extraction efficiency and the most effectively improve the method for brightness beyond doubt; But the increase that is accompanied by electric current can produce a large amount of heat energy; Its luminous efficiency of led chip joint temperature rise descends thereupon; Brightness increases and the contradiction of joint temperature rise in order to solve, and realizes high brightness, the high stability of LED, and the solution of great power LED cooling problem becomes the task of top priority.
In the existing high-power LED encapsulation structure, led chip generally all is fixed on the metal base, and the heat that chip produces is passed on the pedestal earlier.The thermal conductivity of metal material is good, but heat dispersion is not good, as in order to make the aluminium of metal base, thermal emissivity rate is 0.05, the heat that distributes through thermal radiation seldom can only adopt convection type to distribute most of heat.For this reason, generally need on metal base, connect heat sink (radiator), need add forced convection device quickening cross-ventilations such as fan sometimes to reach the heat radiation purpose.In the application product overall thermal resistance, the thermal resistance between the heat sink and external environment condition is very important part, has directly influenced the variation of led chip joint temperature.
The patent No. is that the Chinese patent of ZL201020165179.3 discloses " a kind of LED encapsulating structure "; This encapsulating structure has proposed pottery, copper highly heat-conductive material are quickened heat radiation as the substitution material at led chip and place, baseplate-laminating district; And relevant structure has been proposed, but the structure of its design is undistinct, and used heat sink material thermal conductivity is not high; The LED encapsulating structure the factor that will consider also consider fully, therefore fail to reach the effect of good heat radiating.
Summary of the invention
The purpose of the utility model is to above-mentioned existing problems and deficiency; Provide a kind of heat that can fast and effeciently led chip be produced to derive from the service area and distribute; The stability and the reliability of led chip are enhanced, power-type LED high heat dispersion encapsulating structure that can continuous operation under big electric current.
The technical scheme of the utility model is achieved in that
The described power-type LED high heat dispersion of the utility model encapsulating structure; Comprise pedestal, high-power LED chip and package assembling; Be characterized in that said pedestal is provided with perforation; Be provided with high thermal conductivity insulating radiation material block in the said perforation, said high-power LED chip is fitted on the high thermal conductivity insulating radiation material block.
Wherein, above-mentioned high thermal conductivity insulating radiation material block is processed by the CVD diamond film with high heat conduction and heat radiation performance or diamond-film-like or graphite film or other non-metallic film.
The thickness of above-mentioned high thermal conductivity insulating radiation material block is 0.1mm～1mm.
The thermal conductivity of above-mentioned high thermal conductivity insulating radiation material block is 400 W/mK～2000 W/mK.
In order to make the described high thermal conductivity insulating radiation of the utility model material block have better heat transfer and heat dispersion further; One side of above-mentioned high thermal conductivity insulating radiation material block is a burnishing surface; The another side is the aufwuchsplate without polishing, and above-mentioned high-power LED chip is fitted on the burnishing surface.
In order to make the described high thermal conductivity insulating radiation of the utility model material block location convenient, above-mentioned perforation is the slotted eye that is notch cuttype.
The utility model is owing to adopt high thermal conductivity insulating radiation material block in the perforation will be arranged on pedestal as the cooling base of high-power LED chip; And with high-power LED chip directly dress be attached on this high thermal conductivity insulating radiation material block; Thereby make the heat dissipation path of high-power LED chip extremely short, thermal resistance reduces obviously, and the heat that therefore just can fast and effeciently high-power LED chip be produced through this high thermal conductivity insulating radiation material block is derived from the service area and distributed; Good heat dissipation effect; Thereby can either reduce the joint temperature effectively, the stability of high-power LED chip and reliability are strengthened greatly, high-power LED chip is worked under big electric current continuously for a long time; Long service life; And the structural design of pedestal is unique, and the perforation on it helps high thermal conductivity insulating radiation material block the heat that high-power LED chip produces is dispersed in the air apace, and the pedestal material therefor is in extensive range.Simultaneously, because the face that high thermal conductivity insulating radiation material block and high-power LED chip fit is a burnishing surface, help like this that high-power LED chip is combined closely with it and the quick transmission that realizes heat; Again because the face that contacts with extraneous air of high thermal conductivity insulating radiation material block is the aufwuchsplate without polishing, so surface area is big, helps increasing area of dissipation and realizes distributing fast of heat.The utility model also has advantages such as simple and reliable for structure, easily manufactured, that appearance and modeling is flexible and changeable.
Below in conjunction with accompanying drawing the utility model is further described.
Description of drawings
Fig. 1 is the cross-sectional view of the utility model scheme 1.
Fig. 2 is the cross-sectional view of the utility model scheme 2.
Embodiment
Like Fig. 1-shown in Figure 2; The described power-type LED high heat dispersion of the utility model encapsulating structure; Comprise pedestal 1, high-power LED chip 2 and package assembling 3; Pedestal 1 is provided with perforation 11, in this perforation 11, be provided with high thermal conductivity insulating radiation material block 4, and high-power LED chip 2 is fitted on the high thermal conductivity insulating radiation material block 4.Wherein, Perforation 11 can be arranged to circle square or square or pentagon or hexagon or other geometry; Big I sets up on their own; The size of high thermal conductivity insulating radiation material block 4 can be made according to the shape and the size of perforation 11; And high thermal conductivity insulating radiation material block 4 processed by the CVD diamond film with high heat conduction and heat radiation performance or diamond-film-like or graphite film, and the thickness of high thermal conductivity insulating radiation material block 4 is 0.1mm～1mm, and the thermal conductivity of high thermal conductivity insulating radiation material block 4 is 400 W/mK～2000 W/mK.As shown in the figure; In order to make the described high thermal conductivity insulating radiation of the utility model material block 4 location convenient; Perforation 11 is for being the slotted eye of notch cuttype; And high thermal conductivity insulating radiation material block 4 is fixed in the last ladder mouth of this notch cuttype slotted eye, and itself and last ladder mouth be for being connected, and mode that high thermal conductivity insulating radiation material block 4 can be through welding simultaneously or heat-conducting glue or alternate manner are fixed in the perforation 11.In order to make the described high thermal conductivity insulating radiation of the utility model material block 4 have better heat transfer and heat dispersion further; One side of high thermal conductivity insulating radiation material block 4 is a burnishing surface; The another side is the aufwuchsplate without polishing; As shown in the figure; High-power LED chip 2 is fitted on the burnishing surface, and high thermal conductivity insulating radiation material block 4 directly contacts with extraneous air without the aufwuchsplate of polishing, and the mode that high-power LED chip 2 can be through welding or heat conduction elargol or alternate manner are fixed on the high thermal conductivity insulating radiation material block 4.And pedestal 1 is processed by metal material or alloy material or ceramic material or other material.In addition; The described package assembling 3 of the utility model can be arranged to multiple different structural forms; As wherein a kind of be that package assembling 3 comprises reflector 31, fluorescent material 32 and flexible lens embedding colloid 33; And high-power LED chip 2 is positioned at the cavity of reflector 31, and 32 of fluorescent materials cover on the high-power LED chip 2, and flexible lens embedding colloid 33 covers the outside of reflector 31 and closely is connected with pedestal 1.As shown in the figure, flexible lens embedding colloid 33 is that high-power LED chip 2, fluorescent material 32 and reflector 31 are encapsulated in the inside, thereby has guaranteed the stability of encapsulating structure.And the shape of reflector 31, size and selected materials can be provided with voluntarily, and the position that reflector 31 is provided with is varied, as shown in Figure 1, and reflector 31 is fixed on the pedestal 1; As shown in Figure 2, reflector 31 is fixed on the high thermal conductivity insulating radiation material block 4.High-power LED chip 2 is electrically connected with external power source for ease; On pedestal 1, also be provided with printed circuit board (PCB) 5; And the position of perforation 11 has hole equally on these printed circuit board (PCB) 5 corresponding pedestals 1, and at this moment, reflector 31 is to be fixed on this printed circuit board (PCB) 5; Printed circuit board (PCB) 5 is provided with binding post 6 simultaneously, and high-power LED chip 2 is electrically connected with binding post 6 through lead 7.
The utility model is described through embodiment; But the utility model is not constituted restriction; Description with reference to the utility model; Other of the disclosed embodiments change, and expect easily that like the professional person for this area such variation should belong within the utility model scope thereof.
Claims (10)
1. power-type LED high heat dispersion encapsulating structure; Comprise pedestal (1), high-power LED chip (2) and package assembling (3); It is characterized in that said pedestal (1) is provided with perforation (11); Be provided with high thermal conductivity insulating radiation material block (4) in the said perforation (11), said high-power LED chip (2) is fitted on the high thermal conductivity insulating radiation material block (4).
2. according to the said power-type LED high heat dispersion of claim 1 encapsulating structure, it is characterized in that above-mentioned high thermal conductivity insulating radiation material block (4) processed by the CVD diamond film with high heat conduction and heat radiation performance or diamond-film-like or graphite film.
3. according to the said power-type LED high heat dispersion of claim 1 encapsulating structure; A side that it is characterized in that above-mentioned high thermal conductivity insulating radiation material block (4) is a burnishing surface; The another side is the aufwuchsplate without polishing, and above-mentioned high-power LED chip (2) is fitted on the burnishing surface.
4. according to the said power-type LED high heat dispersion of claim 1 encapsulating structure, the thickness that it is characterized in that above-mentioned high thermal conductivity insulating radiation material block (4) is 0.1mm～1mm.
5. according to the said power-type LED high heat dispersion of claim 1 encapsulating structure, the thermal conductivity that it is characterized in that above-mentioned high thermal conductivity insulating radiation material block (4) is 400 W/mK～2000 W/mK.
6. according to the said power-type LED high heat dispersion of claim 1 encapsulating structure, it is characterized in that above-mentioned high thermal conductivity insulating radiation material block (4) is fixed in the above-mentioned perforation (11) through the mode or the heat-conducting glue of welding.
7. according to the said power-type LED high heat dispersion of claim 1 encapsulating structure, it is characterized in that above-mentioned high-power LED chip (2) is fixed on the above-mentioned high thermal conductivity insulating radiation material block (4) through the mode or the heat conduction elargol of welding.
8. according to the said power-type LED high heat dispersion of claim 1 encapsulating structure, it is characterized in that above-mentioned perforation (11) is for being the slotted eye of notch cuttype.
9. according to the said power-type LED high heat dispersion of claim 1 encapsulating structure; It is characterized in that above-mentioned package assembling (3) comprises reflector (31), fluorescent material (32) and flexible lens embedding colloid (33); The said base (1) that is fixed on said reflector (31) go up or above-mentioned high thermal conductivity insulating radiation material block (4) on; Above-mentioned high-power LED chip (2) is positioned at the cavity of said reflector (31); Said fluorescent material (32) covers on the above-mentioned high-power LED chip (2), and said flexible lens embedding colloid (33) covers the outside of reflector (31) and closely is connected with said base (1).
10. according to the said power-type LED high heat dispersion of claim 1 encapsulating structure; It is characterized in that also being provided with on the said base (1) printed circuit board (PCB) (5); Said printed circuit board (PCB) (5) is provided with binding post (6), and above-mentioned high-power LED chip (2) is electrically connected with said binding post (6) through lead (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204048976U CN202308042U (en) | 2011-10-22 | 2011-10-22 | High heat dispersion packaging structure of power-type light-emitting diode (LED) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204048976U CN202308042U (en) | 2011-10-22 | 2011-10-22 | High heat dispersion packaging structure of power-type light-emitting diode (LED) |
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| Publication Number | Publication Date |
|---|---|
| CN202308042U true CN202308042U (en) | 2012-07-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204048976U Expired - Fee Related CN202308042U (en) | 2011-10-22 | 2011-10-22 | High heat dispersion packaging structure of power-type light-emitting diode (LED) |
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| CN (1) | CN202308042U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361060A (en) * | 2011-10-22 | 2012-02-22 | 华南师范大学 | Encapsulating structure for high-power LED (Light-Emitting Diode) radiating base |
| CN106876565A (en) * | 2017-03-01 | 2017-06-20 | 盐城东紫光电科技有限公司 | It is exclusively used in the encapsulating structure of UV LED chip |
| CN106920871A (en) * | 2017-03-01 | 2017-07-04 | 盐城东紫光电科技有限公司 | A kind of encapsulating structure for being exclusively used in UV LED chip |
| CN106992242A (en) * | 2017-03-01 | 2017-07-28 | 盐城东紫光电科技有限公司 | The encapsulating structure of UV LED chip |
| CN106987145A (en) * | 2017-03-01 | 2017-07-28 | 盐城东紫光电科技有限公司 | A kind of encapsulating structure of UV LED chip |
-
2011
- 2011-10-22 CN CN2011204048976U patent/CN202308042U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361060A (en) * | 2011-10-22 | 2012-02-22 | 华南师范大学 | Encapsulating structure for high-power LED (Light-Emitting Diode) radiating base |
| CN106876565A (en) * | 2017-03-01 | 2017-06-20 | 盐城东紫光电科技有限公司 | It is exclusively used in the encapsulating structure of UV LED chip |
| CN106920871A (en) * | 2017-03-01 | 2017-07-04 | 盐城东紫光电科技有限公司 | A kind of encapsulating structure for being exclusively used in UV LED chip |
| CN106992242A (en) * | 2017-03-01 | 2017-07-28 | 盐城东紫光电科技有限公司 | The encapsulating structure of UV LED chip |
| CN106987145A (en) * | 2017-03-01 | 2017-07-28 | 盐城东紫光电科技有限公司 | A kind of encapsulating structure of UV LED chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20191022 |