CN202308042U - High heat dispersion packaging structure of power-type light-emitting diode (LED) - Google Patents

High heat dispersion packaging structure of power-type light-emitting diode (LED) Download PDF

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CN202308042U
CN202308042U CN2011204048976U CN201120404897U CN202308042U CN 202308042 U CN202308042 U CN 202308042U CN 2011204048976 U CN2011204048976 U CN 2011204048976U CN 201120404897 U CN201120404897 U CN 201120404897U CN 202308042 U CN202308042 U CN 202308042U
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heat dissipation
thermal conductivity
led chip
power
power led
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刘小平
范广涵
郑树文
张涛
姚光锐
张瀚翔
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South China Normal University
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires

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Abstract

一种功率型LED高散热性能封装结构,包括基座、大功率LED芯片和封装组件,所述基座上设置有穿孔,所述穿孔中设置有高导热率绝缘散热材料块,所述大功率LED芯片贴合在高导热率绝缘散热材料块上。本实用新型由于采用将设置在基座的穿孔中的高导热率绝缘散热材料块作为大功率LED芯片的散热基座,并将大功率LED芯片直接装贴在该高导热率绝缘散热材料块上,从而使大功率LED芯片的散热路径极短,热阻减少明显,因此大功率LED芯片产生的热量能够快速有效地从工作区导出并散发,从而有效地降低了节温,使大功率LED芯片的稳定性和可靠性得到极大的增强,使用寿命长,而且本实用新型结构简单可靠、制造方便、外观造型灵活多变。

A package structure of power type LED with high heat dissipation performance, including a base, a high-power LED chip and a package assembly, the base is provided with a perforation, and a block of high thermal conductivity insulating and heat-dissipating material is provided in the perforation, and the high-power The LED chip is pasted on the high thermal conductivity insulation and heat dissipation material block. The utility model adopts the high thermal conductivity insulating and heat dissipation material block arranged in the perforation of the base as the heat dissipation base of the high-power LED chip, and directly attaches the high-power LED chip to the high thermal conductivity insulation and heat dissipation material block. , so that the heat dissipation path of the high-power LED chip is extremely short, and the thermal resistance is significantly reduced, so the heat generated by the high-power LED chip can be quickly and effectively exported from the working area and dissipated, thereby effectively reducing the junction temperature and making the high-power LED chip The stability and reliability of the utility model are greatly enhanced, and the service life is long, and the utility model has a simple and reliable structure, convenient manufacture, and flexible and changeable appearance.

Description

功率型LED高散热性能封装结构Power LED high heat dissipation package structure

技术领域 technical field

本实用新型涉及大功率LED照明技术领域,具体涉及一种功率型LED高散热性能封装结构。 The utility model relates to the technical field of high-power LED lighting, in particular to a packaging structure of a power type LED with high heat dissipation performance.

背景技术 Background technique

LED是一类可直接将电能转化为可见光和辐射能的发光器件,具有工作电压低、耗电量小、发光效率高、发光响应时间极短、光色纯、结构牢固、抗冲击、耐振动、性能稳定可靠、重量轻、体积小、成本低等诸多优点,已经越来越广泛的应用于照明和装饰灯具等领域中。 LED is a kind of light-emitting device that can directly convert electric energy into visible light and radiant energy. , stable and reliable performance, light weight, small size, low cost and many other advantages, it has been more and more widely used in lighting and decorative lamps and other fields.

LED芯片的结温变化影响其出光效率、光衰、颜色、波长以及正向电压等光电色度和电气参数等,影响器件的寿命和可靠性。在努力增加其内外出光效率的同时增大其输入电流无疑是最有效的提高亮度的方法,但伴随着电流的增加会产生大量的热能,LED芯片节温升高其发光效率随之下降,为解决亮度增加和节温升高的矛盾,实现LED的高亮度、高稳定性,大功率LED散热问题的解决成为当务之急。 The junction temperature change of the LED chip affects its photoelectric chromaticity and electrical parameters such as light extraction efficiency, light decay, color, wavelength, and forward voltage, etc., and affects the life and reliability of the device. Increasing its input current while trying to increase its internal and external light output efficiency is undoubtedly the most effective way to improve brightness, but with the increase of current, a large amount of heat energy will be generated, and the luminous efficiency of the LED chip will decrease as the junction temperature increases. To solve the contradiction between brightness increase and temperature rise, realize high brightness and high stability of LED, and solve the heat dissipation problem of high-power LED has become a top priority.

现有的大功率LED封装结构中,LED芯片一般都被固定于一金属基座上,芯片产生的热量先被传递至基座上。金属材料的导热性好,但是散热性能不佳、如一般用以制作金属基座的铝,热辐射率为0.05,通过热辐射散发的热量很少,只能采用对流方式散发大部分热量。为此,一般需要在金属基座上连接热沉(散热器)以达到散热目的,有时需要加设风扇等强制对流装置加快空气对流。在应用产品整体热阻中,热沉与外部环境之间的热阻是非常重要的组成部分,直接影响了LED芯片节温的变化。 In the existing high-power LED packaging structure, the LED chip is generally fixed on a metal base, and the heat generated by the chip is first transferred to the base. Metal materials have good thermal conductivity, but poor heat dissipation performance. For example, aluminum, which is generally used to make metal bases, has a thermal radiation rate of 0.05. The heat dissipated by thermal radiation is very little, and most of the heat can only be dissipated by convection. For this reason, it is generally necessary to connect a heat sink (radiator) on the metal base to achieve heat dissipation, and sometimes it is necessary to add a forced convection device such as a fan to speed up air convection. In the overall thermal resistance of the application product, the thermal resistance between the heat sink and the external environment is a very important component, which directly affects the change of the junction temperature of the LED chip.

专利号为ZL201020165179.3的中国专利公开了“一种LED封装结构”,该封装结构提出了将陶瓷、铜高导热材料作为LED芯片与基板贴合区处的替代材料来加速散热,并提出了相关的结构,但其设计的结构并不明晰,所用的散热材料热导率并不高,LED封装结构所要考虑的因素也并未考虑完全,因此未能达到良好散热的效果。 The Chinese patent with the patent number ZL201020165179.3 discloses "an LED packaging structure". Related structures, but the design structure is not clear, the thermal conductivity of the heat dissipation material used is not high, and the factors to be considered in the LED package structure are not fully considered, so the effect of good heat dissipation cannot be achieved.

发明内容 Contents of the invention

本实用新型的目的在于针对上述存在问题和不足,提供一种能快速有效地将LED芯片产生的热量从工作区导出并散发,使LED芯片的稳定性和可靠性得到增强,可在大电流下连续工作的功率型LED高散热性能封装结构。 The purpose of this utility model is to solve the above existing problems and deficiencies, to provide a method that can quickly and effectively export and dissipate the heat generated by the LED chip from the working area, so that the stability and reliability of the LED chip are enhanced, and it can be used under high current. Continuously working power LED packaging structure with high heat dissipation performance.

本实用新型的技术方案是这样实现的: The technical scheme of the utility model is achieved in that:

本实用新型所述的功率型LED高散热性能封装结构,包括基座、大功率LED芯片和封装组件,其特点是所述基座上设置有穿孔,所述穿孔中设置有高导热率绝缘散热材料块,所述大功率LED芯片贴合在高导热率绝缘散热材料块上。 The power type LED high heat dissipation packaging structure described in the utility model includes a base, a high-power LED chip and a package assembly, and is characterized in that the base is provided with a perforation, and the perforation is provided with a high thermal conductivity insulation heat dissipation A material block, the high-power LED chip is pasted on the high thermal conductivity insulation and heat dissipation material block.

其中,上述高导热率绝缘散热材料块由具有高导热散热性能的CVD金刚石膜或类金刚石膜或石墨膜或其它非金属膜制成。 Wherein, the above-mentioned high thermal conductivity insulation and heat dissipation material block is made of CVD diamond film or diamond-like film or graphite film or other non-metal films with high heat conduction and heat dissipation performance.

上述高导热率绝缘散热材料块的厚度为0.1mm~1mm。 The thickness of the high thermal conductivity insulation and heat dissipation material block is 0.1mm-1mm.

上述高导热率绝缘散热材料块的导热率为400 W/m·K~2000 W/m·K。 The thermal conductivity of the above-mentioned high thermal conductivity insulating and heat dissipation material block is 400 W/m·K~2000 W/m·K.

为了进一步地使本实用新型所述的高导热率绝缘散热材料块具有更好的传热及散热性能,上述高导热率绝缘散热材料块的一侧面为抛光面,另一侧面为未经抛光处理的生长面,上述大功率LED芯片贴合在抛光面上。 In order to further make the high thermal conductivity insulation and heat dissipation material block described in the present invention have better heat transfer and heat dissipation performance, one side of the high thermal conductivity insulation and heat dissipation material block is a polished surface, and the other side is an unpolished surface. The above-mentioned high-power LED chip is attached to the polished surface.

为了使本实用新型所述的高导热率绝缘散热材料块定位方便,上述穿孔为呈阶梯型的槽孔。 In order to facilitate the positioning of the insulating and heat-dissipating material block with high thermal conductivity described in the utility model, the above-mentioned perforations are stepped slots.

本实用新型由于采用将设置在基座的穿孔中的高导热率绝缘散热材料块作为大功率LED芯片的散热基座,并将大功率LED芯片直接装贴在该高导热率绝缘散热材料块上,从而使大功率LED芯片的散热路径极短,热阻减少明显,因此通过该高导热率绝缘散热材料块就能够快速有效地将大功率LED芯片产生的热量从工作区导出并散发,散热效果好,从而既能够有效地降低节温,使大功率LED芯片的稳定性和可靠性得到极大的增强,又能够使大功率LED芯片在大电流下连续长时间地工作,使用寿命长,并且基座的结构设计独特,其上的穿孔有利于高导热率绝缘散热材料块将大功率LED芯片产生的热量快速地散发到空气中,而且基座所用材料范围广泛。同时,由于高导热率绝缘散热材料块与大功率LED芯片相贴合的面为抛光面,这样有利于大功率LED芯片与其紧密结合而实现热量的快速传递;又由于高导热率绝缘散热材料块与外部空气接触的面为未经抛光处理的生长面,因此表面积大,有利于增大散热面积而实现热量的快速散发。本实用新型还具有结构简单可靠、制造方便、外观造型灵活多变等优点。 The utility model adopts the high thermal conductivity insulating and heat dissipation material block arranged in the perforation of the base as the heat dissipation base of the high-power LED chip, and directly attaches the high-power LED chip to the high thermal conductivity insulation and heat dissipation material block. , so that the heat dissipation path of the high-power LED chip is extremely short, and the thermal resistance is significantly reduced. Therefore, the heat generated by the high-power LED chip can be quickly and effectively exported from the working area through the high thermal conductivity insulating heat dissipation material block, and the heat dissipation effect is excellent. Good, so that it can not only effectively reduce the junction temperature, greatly enhance the stability and reliability of the high-power LED chip, but also enable the high-power LED chip to work continuously for a long time under high current, with a long service life, and The structure design of the base is unique, and the perforation on it is conducive to the block of high thermal conductivity insulating heat dissipation material to quickly dissipate the heat generated by the high-power LED chip into the air, and the material used for the base is in a wide range. At the same time, because the surface of the insulating heat dissipation material block with high thermal conductivity and the high-power LED chip is a polished surface, it is beneficial to the high-power LED chip to be closely combined with it to achieve rapid heat transfer; and because the high thermal conductivity insulating heat dissipation material block The surface in contact with the external air is an unpolished growth surface, so the surface area is large, which is conducive to increasing the heat dissipation area and realizing rapid heat dissipation. The utility model also has the advantages of simple and reliable structure, convenient manufacture, flexible and changeable appearance, and the like.

下面结合附图对本实用新型作进一步的说明。 Below in conjunction with accompanying drawing, the utility model is further described.

附图说明 Description of drawings

图1为本实用新型方案1的剖面结构示意图。 Fig. 1 is a schematic cross-sectional structure diagram of the utility model scheme 1.

图2为本实用新型方案2的剖面结构示意图。 Fig. 2 is a schematic cross-sectional structure diagram of the utility model scheme 2.

具体实施方式 Detailed ways

如图1-图2所示,本实用新型所述的功率型LED高散热性能封装结构,包括基座1、大功率LED芯片2和封装组件3,在基座1上设置有穿孔11,在该穿孔11中设置有高导热率绝缘散热材料块4,而大功率LED芯片2贴合在高导热率绝缘散热材料块4上。其中,穿孔11可设置成圆形或正方形或方形或五边形或六边形或其它几何形状,大小可自行设定,高导热率绝缘散热材料块4的尺寸可根据穿孔11的形状及大小来制作,而且高导热率绝缘散热材料块4由具有高导热散热性能的CVD金刚石膜或类金刚石膜或石墨膜制成,并且高导热率绝缘散热材料块4的厚度为0.1mm~1mm,而高导热率绝缘散热材料块4的导热率为400 W/m·K~2000 W/m·K。如图所示,为了使本实用新型所述的高导热率绝缘散热材料块4定位方便,穿孔11为呈阶梯型的槽孔,而高导热率绝缘散热材料块4固定在该阶梯型槽孔的上阶梯口内,而且其与上阶梯口为配合连接,同时高导热率绝缘散热材料块4可通过焊接的方式或导热胶或其它方式固定在穿孔11中。为了进一步地使本实用新型所述的高导热率绝缘散热材料块4具有更好的传热及散热性能,高导热率绝缘散热材料块4的一侧面为抛光面,另一侧面为未经抛光处理的生长面,如图所示,大功率LED芯片2贴合在抛光面上,而高导热率绝缘散热材料块4未经抛光处理的生长面直接与外部空气接触,并且大功率LED芯片2可通过焊接的方式或导热银胶或其它方式固定在高导热率绝缘散热材料块4上。而基座1由金属材料或合金材料或陶瓷材料或其它材料制成。此外,本实用新型所述的封装组件3可设置成多种不同的结构形式,如其中一种是封装组件3包括反光杯31、荧光材料32和柔性透镜灌封胶体33,而大功率LED芯片2位于反光杯31的腔体内,荧光材料32则覆盖在大功率LED芯片2上,柔性透镜灌封胶体33覆盖在反光杯31的外侧且与基座1紧密连接。如图所示,柔性透镜灌封胶体33是将大功率LED芯片2、荧光材料32及反光杯31封装在里面,从而保证了封装结构的稳定性。而反光杯31的形状、大小及所选材料可以自行设置,而且反光杯31设置的位置多种多样,如图1所示,反光杯31固定在基座1上;如图2所示,反光杯31固定在高导热率绝缘散热材料块4上。为了方便大功率LED芯片2与外部电源电连接,在基座1上还设置有印刷电路板5,而该印刷电路板5对应基座1上穿孔11的位置处同样开有孔洞,此时,反光杯31是固定在该印刷电路板5上,同时在印刷电路板5上设置有接线柱6,大功率LED芯片2通过导线7与接线柱6电连接。 As shown in Fig. 1-Fig. 2, the package structure of power type LED with high heat dissipation performance described in the utility model includes a base 1, a high-power LED chip 2 and a package assembly 3, and a perforation 11 is arranged on the base 1. The through hole 11 is provided with a high thermal conductivity insulating and heat dissipation material block 4 , and the high power LED chip 2 is bonded on the high thermal conductivity insulation and heat dissipation material block 4 . Wherein, the perforation 11 can be arranged in a circle, a square, a square, a pentagon, a hexagon or other geometric shapes, and the size can be set by itself. and the high thermal conductivity insulating and heat dissipation material block 4 is made of CVD diamond film or diamond-like film or graphite film with high heat conduction and heat dissipation performance, and the thickness of the high thermal conductivity insulation and heat dissipation material block 4 is 0.1 mm to 1 mm, while The thermal conductivity of the high thermal conductivity insulation and heat dissipation material block 4 is 400 W/m·K~2000 W/m·K. As shown in the figure, in order to facilitate the positioning of the high thermal conductivity insulation and heat dissipation material block 4 described in the utility model, the perforation 11 is a stepped slot, and the high thermal conductivity insulation and heat dissipation material block 4 is fixed in the stepped slot. In the upper stepped opening of the upper stepped opening, and it is connected with the upper stepped opening, while the high thermal conductivity insulating and heat dissipation material block 4 can be fixed in the through hole 11 by welding or thermally conductive glue or other methods. In order to further make the high thermal conductivity insulation and heat dissipation material block 4 described in the utility model have better heat transfer and heat dissipation performance, one side of the high thermal conductivity insulation and heat dissipation material block 4 is a polished surface, and the other side is an unpolished surface. The treated growth surface, as shown in the figure, the high-power LED chip 2 is attached to the polished surface, while the unpolished growth surface of the high thermal conductivity insulating heat dissipation material block 4 is directly in contact with the outside air, and the high-power LED chip 2 It can be fixed on the block 4 of insulating and heat-dissipating material with high thermal conductivity by means of welding or heat-conducting silver glue or other means. And the base 1 is made of metal material or alloy material or ceramic material or other materials. In addition, the packaging assembly 3 described in the present utility model can be arranged in a variety of different structural forms, such as one of which is that the packaging assembly 3 includes a reflective cup 31, a fluorescent material 32 and a flexible lens potting colloid 33, and the high-power LED chip 2 is located in the cavity of the reflective cup 31, the fluorescent material 32 covers the high-power LED chip 2, and the flexible lens potting colloid 33 covers the outside of the reflective cup 31 and is closely connected with the base 1. As shown in the figure, the flexible lens potting compound 33 encapsulates the high-power LED chip 2, the fluorescent material 32 and the reflective cup 31 inside, thereby ensuring the stability of the packaging structure. The shape, size and selected material of the reflective cup 31 can be set voluntarily, and the position of the reflective cup 31 is varied. As shown in Figure 1, the reflective cup 31 is fixed on the base 1; The cup 31 is fixed on the block 4 of insulating and heat-dissipating material with high thermal conductivity. In order to facilitate the electrical connection between the high-power LED chip 2 and the external power supply, a printed circuit board 5 is also provided on the base 1, and the printed circuit board 5 is also provided with a hole at the position corresponding to the perforation 11 on the base 1. At this time, The reflective cup 31 is fixed on the printed circuit board 5 , and the printed circuit board 5 is provided with a binding post 6 , and the high-power LED chip 2 is electrically connected to the binding post 6 through a wire 7 .

本实用新型是通过实施例来描述的,但并不对本实用新型构成限制,参照本实用新型的描述,所公开的实施例的其他变化,如对于本领域的专业人士是容易想到的,这样的变化应该属于本实用新型权利要求限定的范围之内。 The utility model is described by the embodiment, but it does not constitute a limitation to the utility model. With reference to the description of the utility model, other changes of the disclosed embodiment are as easily conceivable for those skilled in the art, such Changes should fall within the scope defined by the claims of the present invention.

Claims (10)

1.一种功率型LED高散热性能封装结构,包括基座(1)、大功率LED芯片(2)和封装组件(3),其特征在于所述基座(1)上设置有穿孔(11),所述穿孔(11)中设置有高导热率绝缘散热材料块(4),所述大功率LED芯片(2)贴合在高导热率绝缘散热材料块(4)上。 1. A package structure of power type LED with high heat dissipation performance, comprising a base (1), a high-power LED chip (2) and a package assembly (3), characterized in that the base (1) is provided with a through hole (11 ), the through hole (11) is provided with a high thermal conductivity insulating heat dissipation material block (4), and the high-power LED chip (2) is pasted on the high thermal conductivity insulating heat dissipation material block (4). 2.根据权利要求1所述功率型LED高散热性能封装结构,其特征在于上述高导热率绝缘散热材料块(4)由具有高导热散热性能的CVD金刚石膜或类金刚石膜或石墨膜制成。 2. The package structure of power type LED with high heat dissipation performance according to claim 1, characterized in that the above-mentioned high thermal conductivity insulating heat dissipation material block (4) is made of CVD diamond film or diamond-like film or graphite film with high heat conduction and heat dissipation performance . 3.根据权利要求1所述功率型LED高散热性能封装结构,其特征在于上述高导热率绝缘散热材料块(4)的一侧面为抛光面,另一侧面为未经抛光处理的生长面,上述大功率LED芯片(2)贴合在抛光面上。 3. The packaging structure of power type LED with high heat dissipation performance according to claim 1, characterized in that one side of the high thermal conductivity insulating heat dissipation material block (4) is a polished surface, and the other side is an unpolished growth surface, The above-mentioned high-power LED chips (2) are pasted on the polished surface. 4.根据权利要求1所述功率型LED高散热性能封装结构,其特征在于上述高导热率绝缘散热材料块(4)的厚度为0.1mm~1mm。 4. The package structure of power LED with high heat dissipation performance according to claim 1, characterized in that the thickness of the high thermal conductivity insulating heat dissipation material block (4) is 0.1mm-1mm. 5.根据权利要求1所述功率型LED高散热性能封装结构,其特征在于上述高导热率绝缘散热材料块(4)的导热率为400 W/m·K~2000 W/m·K。 5. The packaging structure of power type LED with high heat dissipation performance according to claim 1, characterized in that the thermal conductivity of the high thermal conductivity insulating heat dissipation material block (4) is 400 W/m·K~2000 W/m·K. 6.根据权利要求1所述功率型LED高散热性能封装结构,其特征在于上述高导热率绝缘散热材料块(4)通过焊接的方式或导热胶固定在上述穿孔(11)中。 6. The package structure of power type LED with high heat dissipation performance according to claim 1, characterized in that the above-mentioned high thermal conductivity insulating and heat-dissipating material block (4) is fixed in the above-mentioned through hole (11) by welding or heat-conducting glue. 7.根据权利要求1所述功率型LED高散热性能封装结构,其特征在于上述大功率LED芯片(2)通过焊接的方式或导热银胶固定在上述高导热率绝缘散热材料块(4)上。 7. The packaging structure of power type LED with high heat dissipation performance according to claim 1, characterized in that the above-mentioned high-power LED chip (2) is fixed on the above-mentioned high thermal conductivity insulating and heat-dissipating material block (4) by means of welding or thermally conductive silver glue . 8.根据权利要求1所述功率型LED高散热性能封装结构,其特征在于上述穿孔(11)为呈阶梯型的槽孔。 8. The package structure of power LED with high heat dissipation performance according to claim 1, characterized in that the above-mentioned through hole (11) is a stepped slot. 9.根据权利要求1所述功率型LED高散热性能封装结构,其特征在于上述封装组件(3)包括反光杯(31)、荧光材料(32)和柔性透镜灌封胶体(33),所述反光杯(31)固定在上述基座(1)上或上述高导热率绝缘散热材料块(4)上,上述大功率LED芯片(2)位于所述反光杯(31)的腔体内,所述荧光材料(32)覆盖在上述大功率LED芯片(2)上,所述柔性透镜灌封胶体(33)覆盖在反光杯(31)的外侧且与上述基座(1)紧密连接。 9. The package structure of power type LED with high heat dissipation performance according to claim 1, characterized in that the package component (3) includes a reflective cup (31), a fluorescent material (32) and a flexible lens potting colloid (33), the The reflective cup (31) is fixed on the above-mentioned base (1) or on the above-mentioned high thermal conductivity insulating and heat-dissipating material block (4), and the above-mentioned high-power LED chip (2) is located in the cavity of the reflective cup (31), and the The fluorescent material (32) covers the high-power LED chip (2), and the flexible lens potting colloid (33) covers the outside of the reflective cup (31) and is closely connected with the base (1). 10.根据权利要求1所述功率型LED高散热性能封装结构,其特征在于上述基座(1)上还设置有印刷电路板(5),所述印刷电路板(5)上设置有接线柱(6),上述大功率LED芯片(2)通过导线(7)与所述接线柱(6)电连接。 10. The package structure of power LED with high heat dissipation performance according to claim 1, characterized in that a printed circuit board (5) is also arranged on the base (1), and a terminal post is arranged on the printed circuit board (5) (6), the above-mentioned high-power LED chip (2) is electrically connected to the terminal (6) through a wire (7).
CN2011204048976U 2011-10-22 2011-10-22 High heat dispersion packaging structure of power-type light-emitting diode (LED) Expired - Fee Related CN202308042U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102361060A (en) * 2011-10-22 2012-02-22 华南师范大学 Encapsulating structure for high-power LED (Light-Emitting Diode) radiating base
CN106876565A (en) * 2017-03-01 2017-06-20 盐城东紫光电科技有限公司 It is exclusively used in the encapsulating structure of UV LED chip
CN106920871A (en) * 2017-03-01 2017-07-04 盐城东紫光电科技有限公司 A kind of encapsulating structure for being exclusively used in UV LED chip
CN106987145A (en) * 2017-03-01 2017-07-28 盐城东紫光电科技有限公司 A kind of encapsulating structure of UV LED chip
CN106992242A (en) * 2017-03-01 2017-07-28 盐城东紫光电科技有限公司 The encapsulating structure of UV LED chip

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102361060A (en) * 2011-10-22 2012-02-22 华南师范大学 Encapsulating structure for high-power LED (Light-Emitting Diode) radiating base
CN106876565A (en) * 2017-03-01 2017-06-20 盐城东紫光电科技有限公司 It is exclusively used in the encapsulating structure of UV LED chip
CN106920871A (en) * 2017-03-01 2017-07-04 盐城东紫光电科技有限公司 A kind of encapsulating structure for being exclusively used in UV LED chip
CN106987145A (en) * 2017-03-01 2017-07-28 盐城东紫光电科技有限公司 A kind of encapsulating structure of UV LED chip
CN106992242A (en) * 2017-03-01 2017-07-28 盐城东紫光电科技有限公司 The encapsulating structure of UV LED chip

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