CN202852761U - Heat radiation structure for ballast - Google Patents
Heat radiation structure for ballast Download PDFInfo
- Publication number
- CN202852761U CN202852761U CN2012205147422U CN201220514742U CN202852761U CN 202852761 U CN202852761 U CN 202852761U CN 2012205147422 U CN2012205147422 U CN 2012205147422U CN 201220514742 U CN201220514742 U CN 201220514742U CN 202852761 U CN202852761 U CN 202852761U
- Authority
- CN
- China
- Prior art keywords
- insulation spacer
- pcb board
- pcb
- oxide
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a heat radiation structure for a ballast. The heat radiation structure comprises a printed circuit board (PCB), metal oxide semiconductor (MOS) transistors, an insulation spacer and a heat radiation base plate. The PCB is provided with an obverse side and a reverse side. Electronic components are arranged on the obverse side of the PCB. The MOS transistors are arranged on the reverse side of the PCB. The shape of the insulation spacer is the same as that of the PCB. Notches are formed in positions, corresponding to the MOS transistors on the PCB, of the insulation spacer. The PCB, the insulation spacer and the heat radiation base plate abut against one another and are jointly accommodated in a shell body. The reverse side of the PCB is aligned with the insulation spacer and the MOS transistors on the PCB are accommodated in the notches of the insulation spacer. The heat radiation structure is simple in structure and capable of effectively improving radiating effects of the MOS transistors, and prolongs the service life.
Description
Technical field
The utility model relates to a kind of ballast radiator structure.
Background technology
Present used ballast, the metal-oxide-semiconductor on it and electronic devices and components are located on the side of pcb board jointly, then place in the housing, like this, metal-oxide-semiconductor is as main heat dissipation element, and the heat on it can not in time distribute, cause easily to burn out, reduce service life.
Summary of the invention
In order to overcome defects, the utility model provides a kind of ballast radiator structure, and this radiator structure is simple, but the radiating effect of Effective Raise metal-oxide-semiconductor improves service life.
The utility model for the technical scheme that solves its technical problem and adopt is: a kind of ballast radiator structure, comprise pcb board, metal-oxide-semiconductor, insulation spacer and radiating bottom plate, described pcb board has front and back, the front of this pcb board is provided with electronic devices and components, and described metal-oxide-semiconductor is located at the back side of described pcb board; Described insulation spacer is consistent with described pcb board shape, and the metal-oxide-semiconductor place on the corresponding described pcb board of this insulation spacer forms breach; Against also jointly being placed in the housing, the back side of described pcb board is placed in the indentation, there of described insulation spacer over against the metal-oxide-semiconductor on described insulation spacer and this pcb board successively for described pcb board, insulation spacer and radiating bottom plate.
As further improvement of the utility model, described pcb board, insulation spacer and bottom are all rounded, and described metal-oxide-semiconductor is four, and these four metal-oxide-semiconductors are symmetrically distributed in the back side of described pcb board.
As further improvement of the utility model, described radiating bottom plate is aluminium sheet.
The beneficial effects of the utility model are: the back side of metal-oxide-semiconductor being located at pcb board, then add an insulation spacer, and the corresponding metal-oxide-semiconductor of insulation spacer place has breach, directly contact in radiating bottom plate again, like this, its heat of metal-oxide-semiconductor as main heat dissipation element can directly be derived through radiating bottom plate, greatly improves radiating effect, improves service life.
Description of drawings
Fig. 1 is the utility model decomposition texture schematic diagram.
By reference to the accompanying drawings, make the following instructions:
1---pcb board 2---metal-oxide-semiconductor
3---insulation spacer 4---radiating bottom plate
11---electronic devices and components 31---breach
The specific embodiment
By reference to the accompanying drawings; the utility model is elaborated; but protection domain of the present utility model is not limited to following embodiment, and the simple equivalence of namely in every case being done with the utility model claim and description changes and modifies, and all still belongs within the utility model patent covering scope.
As shown in Figure 1, a kind of ballast radiator structure comprises pcb board 1, metal-oxide-semiconductor 2, insulation spacer 3 and radiating bottom plate 4, and described pcb board has front and back, and the front of this pcb board is provided with electronic devices and components 11, and described metal-oxide-semiconductor is located at the back side of described pcb board; Described insulation spacer is consistent with described pcb board shape, and the metal-oxide-semiconductor place on the corresponding described pcb board of this insulation spacer forms breach 21; Against also jointly being placed in the housing, the back side of described pcb board is placed in the indentation, there of described insulation spacer over against the metal-oxide-semiconductor on described insulation spacer and this pcb board successively for described pcb board, insulation spacer and radiating bottom plate.Like this, directly export on the housing by radiating bottom plate as its heat of metal-oxide-semiconductor of main heat dissipation element, thereby can better protect metal-oxide-semiconductor, improve its service life.
Preferably, described pcb board, insulation spacer and bottom are all rounded, and described metal-oxide-semiconductor is four, and these four metal-oxide-semiconductors are symmetrically distributed in the back side of described pcb board.
Preferably, stating radiating bottom plate is aluminium sheet.
Claims (3)
1. ballast radiator structure, comprise pcb board (1), metal-oxide-semiconductor (2), insulation spacer (3) and radiating bottom plate (4), described pcb board has front and back, the front of this pcb board is provided with electronic devices and components (11), it is characterized in that: described metal-oxide-semiconductor is located at the back side of described pcb board; Described insulation spacer is consistent with described pcb board shape, and the metal-oxide-semiconductor place on the corresponding described pcb board of this insulation spacer forms breach (21); Against also jointly being placed in the housing, the back side of described pcb board is placed in the indentation, there of described insulation spacer over against the metal-oxide-semiconductor on described insulation spacer and this pcb board successively for described pcb board, insulation spacer and radiating bottom plate.
2. ballast radiator structure according to claim 1, it is characterized in that: described pcb board, insulation spacer and bottom are all rounded, and described metal-oxide-semiconductor is four, and these four metal-oxide-semiconductors are symmetrically distributed in the back side of described pcb board.
3. ballast radiator structure according to claim 1 and 2, it is characterized in that: described radiating bottom plate is aluminium sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205147422U CN202852761U (en) | 2012-10-09 | 2012-10-09 | Heat radiation structure for ballast |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205147422U CN202852761U (en) | 2012-10-09 | 2012-10-09 | Heat radiation structure for ballast |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202852761U true CN202852761U (en) | 2013-04-03 |
Family
ID=47983954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012205147422U Expired - Fee Related CN202852761U (en) | 2012-10-09 | 2012-10-09 | Heat radiation structure for ballast |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202852761U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103712191A (en) * | 2012-10-09 | 2014-04-09 | 昆山和光照明科技有限公司 | Heat radiation structure for ballast |
-
2012
- 2012-10-09 CN CN2012205147422U patent/CN202852761U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103712191A (en) * | 2012-10-09 | 2014-04-09 | 昆山和光照明科技有限公司 | Heat radiation structure for ballast |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130403 Termination date: 20151009 |
|
| EXPY | Termination of patent right or utility model |