CN202558975U - 一种单晶随炉等温退火工装 - Google Patents
一种单晶随炉等温退火工装 Download PDFInfo
- Publication number
- CN202558975U CN202558975U CN2012201347788U CN201220134778U CN202558975U CN 202558975 U CN202558975 U CN 202558975U CN 2012201347788 U CN2012201347788 U CN 2012201347788U CN 201220134778 U CN201220134778 U CN 201220134778U CN 202558975 U CN202558975 U CN 202558975U
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- mono
- crystal
- monocrystalline
- annealing
- crucible
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- 238000000137 annealing Methods 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 title claims abstract description 28
- 230000017525 heat dissipation Effects 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000009413 insulation Methods 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims description 9
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 230000008646 thermal stress Effects 0.000 abstract description 11
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201347788U CN202558975U (zh) | 2012-04-01 | 2012-04-01 | 一种单晶随炉等温退火工装 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201347788U CN202558975U (zh) | 2012-04-01 | 2012-04-01 | 一种单晶随炉等温退火工装 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202558975U true CN202558975U (zh) | 2012-11-28 |
Family
ID=47208651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012201347788U Expired - Lifetime CN202558975U (zh) | 2012-04-01 | 2012-04-01 | 一种单晶随炉等温退火工装 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202558975U (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103952759A (zh) * | 2014-05-09 | 2014-07-30 | 淮安红相光电科技有限公司 | 加热体内置的坩埚下降法制备氟化钙晶体的方法及装置 |
| WO2017181765A1 (zh) * | 2016-04-19 | 2017-10-26 | 北京世纪金光半导体有限公司 | 一种pvt法生长碳化硅单晶时随炉退火的方法 |
-
2012
- 2012-04-01 CN CN2012201347788U patent/CN202558975U/zh not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103952759A (zh) * | 2014-05-09 | 2014-07-30 | 淮安红相光电科技有限公司 | 加热体内置的坩埚下降法制备氟化钙晶体的方法及装置 |
| CN103952759B (zh) * | 2014-05-09 | 2016-05-25 | 淮安红相光电科技有限公司 | 加热体内置的坩埚下降法制备氟化钙晶体的方法及装置 |
| WO2017181765A1 (zh) * | 2016-04-19 | 2017-10-26 | 北京世纪金光半导体有限公司 | 一种pvt法生长碳化硅单晶时随炉退火的方法 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: CENTURY GOLDRAY SEMICONDUCTOR CO., LTD. Assignor: Beijing Huajin Chuangwei Electronics Co., Ltd. Contract record no.: 2015110000045 Denomination of utility model: Furnace isothermal annealing tool for mono-crystal Granted publication date: 20121128 License type: Exclusive License Record date: 20151103 |
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| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Furnace isothermal annealing tool for mono-crystal Effective date of registration: 20151117 Granted publication date: 20121128 Pledgee: Medium range Leasing Co. Ltd. Pledgor: Beijing Huajin Chuangwei Electronics Co., Ltd. Registration number: 2015990001011 |
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| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20161201 Granted publication date: 20121128 Pledgee: Medium range Leasing Co. Ltd. Pledgor: Beijing Huajin Chuangwei Electronics Co., Ltd. Registration number: 2015990001011 |
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| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170106 Address after: Tonghui trunk road 100176 Beijing city Daxing District economic and Technological Development Zone No. 17 hospital Patentee after: CENTURY GOLDRAY SEMICONDUCTOR CO., LTD. Address before: 100176 Beijing economic and Technological Development Zone, Beijing, sea road, No. 17, No. three, No. Patentee before: Beijing Huajin Chuangwei Electronics Co., Ltd. |
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Effective date of registration: 20180814 Granted publication date: 20121128 |
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