CN202430328U - Heater used for thermal field of MCZ (magnetic-field-applied Czochralski method) monocrystal furnace - Google Patents
Heater used for thermal field of MCZ (magnetic-field-applied Czochralski method) monocrystal furnace Download PDFInfo
- Publication number
- CN202430328U CN202430328U CN 201120503128 CN201120503128U CN202430328U CN 202430328 U CN202430328 U CN 202430328U CN 201120503128 CN201120503128 CN 201120503128 CN 201120503128 U CN201120503128 U CN 201120503128U CN 202430328 U CN202430328 U CN 202430328U
- Authority
- CN
- China
- Prior art keywords
- heater
- well heater
- field
- magnetic field
- mcz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract description 4
- 239000013078 crystal Substances 0.000 claims description 28
- 230000000694 effects Effects 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract description 2
- 238000005728 strengthening Methods 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001722 carbon compounds Chemical class 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000007770 graphite material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 240000003936 Plumbago auriculata Species 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a heater used for a thermal field of an MCZ (magnetic-field-applied Czochralski method) monocrystal furnace. The heater is an annular heater of a spiral tubular structure. The heater is provided with three connecting columns, wherein two connecting columns are arranged at one end of the heater in the axis direction, and the third connecting column is arranged at the other end of the heater in the axis direction. A strengthening structure is arranged between two adjacent spiral tubes of the heater. The strengthening structure is an insulation support. After the heater is electrified, the joule's law is met and the heating effect is generated, and a magnetic field can be formed inside the cavity of the heater, thus being beneficial to inhibiting convective motion of a silicon melt. By adopting the annular heater, the monocrystal furnace has an MCZ effect, no external magnetic field device is required, and power consumption of an external magnetic field is reduced.
Description
Technical field
The utility model relates to a kind of parts that are used for the direct-pulling single crystal furnace thermal field system, relates in particular to a kind of well heater that is used for direct-pulling single crystal furnace thermal field.
Background technology
Along with developing rapidly of semiconductor silicon material and photovoltaic industry, large diameter silicon single-crystal has become the dominant direction of production.The major diameter single crystal of growing just needs to be equipped with the hot system of large size, is roughly 1/3 to increase the charge and the crystal diameter of maintenance and the ratio of crucible diameter, the high efficiency isoparametric consistence of crystal oxygen level of taking into account simultaneously of crystal production that is obtaining.
The well heater of being made by high purity graphite material or carbon/carbon compound material is the core component of single crystal growing furnace Nei Re system; The profile of existing well heater is cylindric (as shown in Figure 1); Cut into symmetric several lobe and arrive tens of lobes, the current opposite in direction that any adjacent two lobes are passed through with the control current direction.In crystal growing process, apply thousands of amperes electric current; The direct current resistance of 0.010～0.005 ohm of well heater under the ampere effect; With the heat that produces tens to hundreds of kilowatts; With the polycrystalline silicon raw material fusing of 20～200kg in the crucible, and remain on more than the fusing point of 1420 ℃ of silicon, to accomplish the crystalline process of growth.
The polycrystalline silicon raw material weight of the increase of quartz crucible diameter, the fusing of every stove increases, the volume of silicon melt becomes big, and the thermal convection of melt also obviously strengthens.Through increasing the insulation of thermal field system, adopt the closed thermal field structure of band guide shell, can reduce melt temperature inside gradient, improve the thermal convection of melt.Effective measures are that melt is applied intensity hundreds of～several kilogausss magnetic field; In magnetic field, will receive the effect of Lorentz force during the convective motion of silicon melt; Consequently the thermal convection campaign is suppressed; Be equivalent to increase the dynamic viscosity of silicon melt, can have improved the isoparametric consistence of crystal oxygen level.
Increase facility investment but be equipped with the externally-applied magnetic field device, when using magnetic field device, except the electric energy that crystal growth consumes, also will consume the operation that additional electric energy is kept magnetic field.The electric energy of keeping magnetic field consumption is approximately 30～50% of crystal growth consumed power, has increased power consumption.
The utility model content
The purpose of the utility model is to provide a kind of well heater that is used for direct-pulling single crystal furnace thermal field, and energising back forms magnetic field in its inside cavity when satisfying Joule's law heat effect is provided, help suppressing the convective motion of silicon melt.Need not under the external magnetic field device condition, adopt the ring heater single crystal growing furnace to have the effect of magnetic field crystal pulling, reduced the power consumption of external magnetic field.
For realizing above-mentioned purpose, the utility model adopts following technical scheme:
A kind of well heater that is used for direct-pulling single crystal furnace thermal field; This well heater is the ring heater of helix structure; This well heater is provided with three joint pins, and wherein two joint pins are positioned at the end of this well heater along axis direction, and the 3rd joint pin is positioned at the other end of this well heater along axis direction.
Be provided with reinforced structure between the adjacent two circle spiral tubes of said well heater.
Said reinforced structure is an insulating support.
The advantage of the utility model is:
The utility model adopts the ring heater of helix structure; After the energising of this well heater, when satisfying Joule's law heat effect is provided, can form magnetic field in its inside cavity; Help suppressing the convective motion of silicon melt, improve the isoparametric consistence of crystal oxygen level.Adopt the single crystal growing furnace of ring heater, the magnetic Czochralski silicon single crystal (MCZ silicon) of in the single crystal growing furnace that does not dispose magnetic field, can growing has reduced the power consumption of external magnetic field.
Description of drawings
Fig. 1 is the structural representation of existing well heater.
Fig. 2 is the structural representation of the utility model.
Fig. 3 is the structural representation of the well heater that is filled with reinforced structure of the utility model.
Embodiment
As shown in Figure 2, a kind of well heater that is used for direct-pulling single crystal furnace thermal field of the utility model, this well heater is the ring heater of helix structure, is made by high purity graphite material or carbon/carbon compound material.This well heater is provided with three joint pins 1,2,3, and wherein joint pin 2,3 is positioned at the end of this well heater along axis direction, plays the effect of supporting well heater; Joint pin 1 is positioned at the other end of this well heater along axis direction.
This well heater in use, joint pin 1,3 is connected with the single crystal growing furnace power supply, forms current return.After the energising, the ring heater of this helix structure meets the following conditions:
(1) heat effect according to the Joule's law electric current satisfies: P=I V=I
2R, wherein the ring heater heating power is P, and voltage is V, and electric current is I, the direct current resistance R of well heater.
(2) according to the direct current resistance R and the power supply coupling of Ohm's law well heater, satisfy: R=V
Max/ I
Max, V wherein
MaxMaximum output voltage, I for the single crystal growing furnace power supply
MaxMaximum output current for the single crystal growing furnace power supply.
(3) when satisfying Joule's law heat effect be provided, be that the quartz crucible inside that plumbago crucible supports provides magnetic field in the inside cavity of the ring heater of helix structure, the magnetic induction density B in this magnetic field is:
B＝μ
0nI
Wherein n is the spiral number of turn of spiral tube; I is the electric current that passes through in the ring heater.
In the magnetic field that the ring heater of helix structure forms after energising; Receive the effect of magnetic field force; This magnetic field force possibly make ring heater fracture occur; For the material that addresses this problem well heater is preferentially selected carbon/carbon compound material, and the filling reinforced structure strengthens ring heater intensity between adjacent two circle spiral tubes.As shown in Figure 3, this reinforced structure can be the insulating support 4 that is filled between the adjacent two circle spiral tubes, and the material of this insulating support 4 can be high temperature insulating material, preferred high temperature sintering corundum (Al
2O
3) material.
Claims (3)
1. well heater that is used for direct-pulling single crystal furnace thermal field; It is characterized in that: this well heater is the ring heater of helix structure; This well heater is provided with three joint pins; Wherein two joint pins are positioned at the end of this well heater along axis direction, and the 3rd joint pin is positioned at the other end of this well heater along axis direction.
2. the well heater that is used for direct-pulling single crystal furnace thermal field according to claim 1 is characterized in that: be provided with reinforced structure between the adjacent two circle spiral tubes of said well heater.
3. the well heater that is used for direct-pulling single crystal furnace thermal field according to claim 2 is characterized in that: said reinforced structure is an insulating support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120503128 CN202430328U (en) | 2011-12-06 | 2011-12-06 | Heater used for thermal field of MCZ (magnetic-field-applied Czochralski method) monocrystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120503128 CN202430328U (en) | 2011-12-06 | 2011-12-06 | Heater used for thermal field of MCZ (magnetic-field-applied Czochralski method) monocrystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202430328U true CN202430328U (en) | 2012-09-12 |
Family
ID=46779791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120503128 Expired - Lifetime CN202430328U (en) | 2011-12-06 | 2011-12-06 | Heater used for thermal field of MCZ (magnetic-field-applied Czochralski method) monocrystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202430328U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104762655A (en) * | 2013-11-19 | 2015-07-08 | 有研新材料股份有限公司 | Combination heater used for czochralski crystal growing furnace hot zone |
| CN109881252A (en) * | 2019-04-08 | 2019-06-14 | 苏州优晶光电科技有限公司 | A kind of long crystal method of electric-resistivity method silicon carbide |
| CN109989105A (en) * | 2019-04-08 | 2019-07-09 | 苏州优晶光电科技有限公司 | A kind of electric-resistivity method silicon carbide crystal growing equipment |
| CN111172584A (en) * | 2020-03-10 | 2020-05-19 | 浙江海纳半导体有限公司 | Three-phase alternating current heater for thermal field of czochralski crystal growing furnace and use method |
-
2011
- 2011-12-06 CN CN 201120503128 patent/CN202430328U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104762655A (en) * | 2013-11-19 | 2015-07-08 | 有研新材料股份有限公司 | Combination heater used for czochralski crystal growing furnace hot zone |
| CN109881252A (en) * | 2019-04-08 | 2019-06-14 | 苏州优晶光电科技有限公司 | A kind of long crystal method of electric-resistivity method silicon carbide |
| CN109989105A (en) * | 2019-04-08 | 2019-07-09 | 苏州优晶光电科技有限公司 | A kind of electric-resistivity method silicon carbide crystal growing equipment |
| CN111172584A (en) * | 2020-03-10 | 2020-05-19 | 浙江海纳半导体有限公司 | Three-phase alternating current heater for thermal field of czochralski crystal growing furnace and use method |
| CN111172584B (en) * | 2020-03-10 | 2023-10-31 | 浙江海纳半导体股份有限公司 | Three-phase alternating current heater for thermal field of Czochralski crystal growing furnace and use method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110983429A (en) | Single crystal furnace and monocrystalline silicon preparation method | |
| CN202430328U (en) | Heater used for thermal field of MCZ (magnetic-field-applied Czochralski method) monocrystal furnace | |
| CN204570091U (en) | There is the single crystal growing furnace mending warm guide shell | |
| CN106868584B (en) | A kind of monocrystalline furnace resistor heater and the method for preparing silicon single crystal using the resistance heater | |
| CN103469295B (en) | A kind of sapphire crystal growing furnace with three well heaters | |
| CN204779921U (en) | Novel polycrystalline silicon side layering heating device | |
| CN103966657A (en) | Ingotting furnace for polycrystalline silicon and quasi single crystal silicon and application method for ingotting furnace | |
| CN201588005U (en) | Two-stage side heater in vertical gradient freeze crystal growing furnace | |
| CN201933199U (en) | Graphite heater | |
| CN103590109B (en) | Czochralski crystal growing furnace magnetic field device and use the crystal pulling method of this magnetic field device | |
| CN104762655A (en) | Combination heater used for czochralski crystal growing furnace hot zone | |
| CN103628129A (en) | Graphite heater used for Czochralski method preparation of monocrystalline silicon | |
| JP2010030867A (en) | Method for growing silicon single crystal | |
| CN102051686A (en) | Method and device for growing large-size sodium yttrium tungstate crystals by two-stage heating and pulling process | |
| CN201933198U (en) | Compound semiconductor heating device | |
| CN202000023U (en) | Thermal field for czochralski silicon monocrystalline furnace | |
| CN202297861U (en) | Single-crystal furnace thermal field heater | |
| CN210341126U (en) | Magnetic control crystal pulling device for large-diameter efficient N-type monocrystalline silicon | |
| CN201864791U (en) | Graphite guiding cylinder of 800 type silicon single crystal furnace | |
| CN101724889A (en) | System for thermal field of straight pulling silicon single crystal furnace | |
| CN109537050A (en) | A kind of ingot furnace | |
| CN211734528U (en) | Semiconductor silicon material growth furnace with annular crucible | |
| CN107651679B (en) | Graphitizing furnace | |
| CN203960389U (en) | The long brilliant stove of lower open type | |
| CN202390569U (en) | Graphite heater |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: YOUYAN NEW MATERIAL CO., LTD. Patentee after: Guotai Semiconductor Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM Semiconductor Materials Co., Ltd. Patentee before: Guotai Semiconductor Materials Co., Ltd. |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: YOUYAN NEW MATERIAL CO., LTD. Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: YOUYAN NEW MATERIAL CO., LTD. Patentee before: Guotai Semiconductor Materials Co., Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150708 Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20150708 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150708 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: YOUYAN NEW MATERIAL CO., LTD. Patentee before: You Yan Semi Materials Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20120912 |
|
| CX01 | Expiry of patent term |