CN211734528U

CN211734528U - Semiconductor silicon material growth furnace with annular crucible

Info

Publication number: CN211734528U
Application number: CN201922375846.4U
Authority: CN
Inventors: 李辉; 秦英谡; 郑锴; 张熠; 穆童
Original assignee: Nanjing Crystal Growth & Energy Equipment Co ltd
Current assignee: Nanjing Jingsheng Equipment Co.,Ltd.
Priority date: 2019-12-26
Filing date: 2019-12-26
Publication date: 2020-10-23
Anticipated expiration: 2029-12-26

Abstract

The utility model discloses a semiconductor silicon material growth furnace with an annular crucible, which comprises a furnace body, a heat insulation layer, a heating element and a crucible, wherein the heat insulation layer, the heating element and the crucible are positioned in the furnace body; so as to increase the size of the product, improve the productivity and reduce the energy consumption; meanwhile, the size of a thermal field is increased, the heating inside the crucible is more uniform, and the quality of the silicon ingot around the crucible is improved, so that the generation of corner ingots is avoided, and the integral yield and quality of the silicon ingot are improved. In addition, the charging amount of the annular crucible is reduced, and the phenomenon that the crucible wall is torn and silicon leaks due to uneven stress at the corner is avoided.

Description

Semiconductor silicon material growth furnace with annular crucible

Technical Field

The utility model belongs to the technical field of silicon crystal material growing furnace.

Background

The quartz ceramic crucible is called as high-purity fused quartz ceramic crucible (the content of silicon dioxide is greater than or equal to 99.9%). The ceramic crucible is made of high-purity fused quartz. Generally, the shape thereof is mainly square and cylindrical. The square high-purity quartz crucible is used in a polycrystalline silicon ingot casting link and serves as a container for melting and growing polycrystalline silicon; the round high-purity quartz crucible is used in the link of pulling single crystal in monocrystalline silicon. The high-purity fused quartz has the characteristics of fine structure, low thermal conductivity, small thermal expansion coefficient, high dimensional precision of a finished product, no deformation at high temperature, good thermal shock stability, good electrical property, good chemical erosion resistance and the like, so the high-purity fused quartz is widely applied to the fields of glass deep processing industry, metallurgical industry, electronic industry, chemical industry, aerospace and the like.

In the prior art, a square crucible is mainly used for growing a whole polycrystalline silicon material, and then the product is made into annular polycrystalline silicon through processing. However, in the scheme, the feeding amount of the raw materials entering the square crucible is large, the production period is long, and the energy consumption is high.

SUMMERY OF THE UTILITY MODEL

The purpose of the invention is as follows: the utility model provides a semiconductor silicon material consumptive material growth stove solves the problem that how to reduce the input, shorten production cycle and energy consumption, reduction in production cost.

The technical scheme is as follows: in order to achieve the above purpose, the utility model can adopt the following technical proposal:

a semiconductor silicon material growth furnace with an annular crucible comprises a furnace body, a heat insulation layer, a heating body and a crucible, wherein the heat insulation layer is positioned in the furnace body; the cross section of the heating body is also circular and surrounds the crucible.

Furthermore, the heating body comprises three sections, namely a lower heating body, a middle heating body and an upper heating body which are arranged from bottom to top.

Furthermore, a crucible shaft for supporting the crucible is arranged below the crucible, and the crucible shaft drives the crucible to rotate.

Further, the crucible shaft is a graphite crucible shaft.

Further, the graphite crucible axially passes through the heat insulation layer downwards.

Has the advantages that: compared with the prior art, the utility model discloses technical scheme's advantage does:

in the technical scheme, the square crucible is changed into the annular crucible, the annular crucible is used for casting the monocrystalline silicon ingot by adopting a casting method, and compared with a quadrilateral crucible, the annular crucible has the advantages that the diagonal length is reduced, and a crucible with a larger size can be put down by a furnace body with the same specification, so that the product size can be increased, the productivity is improved, and the energy consumption is reduced; meanwhile, the size of a thermal field is increased, the heating inside the crucible is more uniform, and the quality of the silicon ingot around the crucible is improved, so that the generation of corner ingots is avoided, and the integral yield and quality of the silicon ingot are improved. In addition, compared with a square crucible, the annular crucible has the advantages that the charging amount is greatly reduced, and the phenomenon that the crucible wall is torn and silicon leaks due to uneven stress at the corner is avoided.

Drawings

FIG. 1 is a schematic structural view of a semiconductor silicon material growth furnace according to the present invention.

Fig. 2 is a perspective view of an annular crucible used in the present invention.

Detailed Description

Referring to fig. 1, the present embodiment discloses a semiconductor silicon material growth furnace with a ring-shaped crucible, which includes a furnace body, a heat insulation layer 2 located in the furnace body, a heating element 3, a crucible 4, and a crucible shaft 1 for supporting the crucible. The heating element 3 surrounds the crucible 4, and the heat insulating layer 2 surrounds the crucible 4 and the heating element 3. As shown in fig. 2, the crucible 4 is cylindrical and the crucible 4 has a ring-shaped cross section. The cross section of the heating body 3 is also circular and surrounds the crucible 4. Crucible axle 1 is the graphite crucible axle, and crucible axle 1 drives crucible 4 and rotates, makes crucible 4 can rotate in the use, makes silicon material 5 be heated more evenly in the crucible, improves the ingot quality, reduces charge and procedure, reduction in production cost, reduction overflow risk. The graphite crucible shaft 1 passes downward through the insulating layer.

The heating body 3 comprises three sections, namely a lower heating body, a middle heating body and an upper heating body which are arranged from bottom to top.

In the embodiment, the annular crucible is used for casting the monocrystalline silicon ingot by adopting a casting method, compared with a quadrilateral crucible, the annular crucible has the advantages that the diagonal length is reduced, and a crucible with a larger size can be put down in a furnace body with the same specification, so that the product size can be increased, the productivity is improved, and the energy consumption is reduced; meanwhile, the size of a thermal field is increased, the heating inside the crucible is more uniform, and the quality of the silicon ingot around the crucible is improved, so that the generation of corner ingots is avoided, and the integral yield and quality of the silicon ingot are improved. In addition, compared with a square crucible, the annular crucible has the advantages that the charging amount is greatly reduced, and the phenomenon that the crucible wall is torn and silicon leaks due to uneven stress at the corner is avoided.

The utility model discloses the method and the way of realizing this technical scheme are many specifically, above only the preferred embodiment of the utility model. It should be noted that, for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be considered as the protection scope of the present invention. All the components not specified in the present embodiment can be realized by the prior art.

Claims

1. A semiconductor silicon material growth furnace with an annular crucible comprises a furnace body, a heat insulation layer positioned in the furnace body, a heating body and a crucible, wherein the heating body surrounds the crucible, the heat insulation layer surrounds the crucible and the periphery of the heating body,

the crucible is characterized in that the crucible is cylindrical and the cross section of the crucible is annular; the cross section of the heating body is also circular and surrounds the crucible.

2. The furnace for growing semiconductor silicon material according to claim 1, wherein: the heating body comprises three sections, namely a lower heating body, a middle heating body and an upper heating body which are arranged from bottom to top.

3. A semiconductor silicon material growth furnace according to claim 1 or 2, characterized in that: and a crucible shaft for supporting the crucible is arranged below the crucible, and the crucible shaft drives the crucible to rotate.

4. The furnace for growing semiconductor silicon material according to claim 2, wherein: the crucible shaft is a graphite crucible shaft.

5. The furnace for growing semiconductor silicon material according to claim 4, wherein: the graphite crucible axially passes through the heat insulation layer downwards.