CN208532964U - A kind of single crystal growing furnace and quartzy multiple feeding device - Google Patents
A kind of single crystal growing furnace and quartzy multiple feeding device Download PDFInfo
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- CN208532964U CN208532964U CN201820769928.XU CN201820769928U CN208532964U CN 208532964 U CN208532964 U CN 208532964U CN 201820769928 U CN201820769928 U CN 201820769928U CN 208532964 U CN208532964 U CN 208532964U
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- feeding device
- pressing plate
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- cylinder
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Abstract
A kind of single crystal growing furnace and quartzy multiple feeding device, including upper furnace body, isolating valve, lower furnace body, crucible, quartzy feeding device, the quartz feeding device includes connecting shaft, molybdenum rod, pressing plate one, pressing plate two, cylinder, outer barrel, support ring, conically shaped bottom；The pressing plate one is placed on pressing plate two；The pressing plate two is placed on cylinder；The connecting shaft is connected through a screw thread with molybdenum rod one end, and lower end is tightened in conically shaped bottom by screw thread；The outer barrel wraps up cylinder, and is fixed together with cylinder；The support ring is fixed on outer barrel.The multiple charging of the polycrystalline silicon material in single crystal growing furnace may be implemented in the device, without the phenomenon that gets stuck when can disposably pull out the single-crystal silicon bar materials of required length, while feed, also avoids monocrystal rod quality contaminated production accident when high temperature.
Description
Technical field
The utility model relates to single crystal furnace equipment manufacturing field, repeatedly charging is filled for specifically a kind of single crystal growing furnace and quartz
It sets.
Background technique
In monocrystal silicon straight pull method production process, silicon material is usually added to heating and melting in crucible, is subsequently cooled to
Certain temperature is fitted into seed crystal in silicon seed clamper, by the upper end of clamper by connector and seed crystal axis connection, passes through
It is promoted, seed crystal is made to grow up to form silicon rod.Since polysilicon original state is solid-state before charging, and polysilicon volume contracts after heating
It is small, so the volume of polysilicon is reduced in crucible, so that there are also remaining biggish spaces on crucible top, so that the tune of polysilicon
Material is equivalent to single crystal growing furnace condiment deficiency, causes the barred body length of the monocrystalline silicon once pulled out shorter, cannot utilize production well
The polysilicon barred body of equipment and production appropriate length adds so single crystal growing furnace production now more is arranged secondary or multiple feeding device
Material device can be divided into metal charge device and nonmetallic feeding device according to device materials, quartz charging in nonmetallic feeding device
Device application is wider, and compared with metal charge device, quartzy feeding device pollution is small, but the stone again compared with metal charge device
English has the characteristics that brittle.
Utility model content
For the above structure, the utility model provides a kind of single crystal growing furnace and quartzy multiple feeding device, solves single crystal growing furnace
Since a filler deficiency causes the insufficient defect of silicon single crystal rod body length pulled out, and solves the brittle and bad carrying of quartz
The characteristics of with installation.
The technical solution adopted by the utility model to solve its technical problems is that: a kind of single crystal growing furnace and quartzy repeatedly charging dress
It sets, including upper furnace body, isolating valve, lower furnace body, crucible, quartzy feeding device, the upper furnace body and isolating valve upper end are fixed on one
It rises, isolating valve lower end is fixed together with lower furnace body, and the crucible is fixed in lower furnace body the quartz feeding device across upper
Furnace body and isolating valve are simultaneously deep into lower furnace body, it is characterised in that: the quartz feeding device includes connecting shaft, molybdenum rod, pressing plate
One, pressing plate two, cylinder, outer barrel, support ring, conically shaped bottom；The pressing plate one is placed on pressing plate two；The pressing plate two
It is placed on cylinder；The connecting shaft is connected through a screw thread with molybdenum rod one end, the molybdenum rod pass through pressing plate one, pressing plate two,
Cylinder and conically shaped bottom, lower end are tightened in conically shaped bottom by screw thread；The outer barrel wraps up cylinder, and with cylinder
Body is fixed together；The support ring is fixed on outer barrel.
As optimization, the pressing plate one is made of symmetrical two halves.
As optimization, arc groove is opened in described two one end of pressing plate.
As optimization, the pressing plate one and two material of pressing plate are polytetrafluoroethylene (PTFE).
As optimization, the cylinder is the taper barrel structure that upper and lower ends are all open, and upper port is wide end, and lower port is
Narrow end, upper port are equipped with edge outstanding.
As optimization, the cylinder material is high-purity suprasil.
It as optimization, is fixedly connected between the outer barrel and cylinder, fixed support ring on the outside of the outer barrel；It is described
Outer barrel and support ring material be stainless steel.
As optimization, the conically shaped bottom narrow end upward, sets gradually three sections from top to bottom among conically shaped bottom
Ascending hole, molybdenum rod are passed through by narrow end, are gone out deeply from wide end, are tightened in conically shaped bottom by nut, conically shaped bottom and spiral shell
Elastic ring is fixed between mother.
As optimization, the elastic ring and nut material are molybdenum.
As optimization, the least significant end at the conically shaped bottom of the feeding device and crucible liquid level are 110- to small distance
120mm。
The beneficial effects of the utility model are: compared with prior art, a kind of single crystal growing furnace and quartz of the utility model are more
The multiple charging of the polycrystalline silicon material in single crystal growing furnace may be implemented in secondary feeding device, can disposably pull out the monocrystalline silicon of required length
Bar, while monocrystal rod quality contaminated production accident when high temperature is also avoided without the phenomenon that gets stuck when feeding.
Detailed description of the invention
Fig. 1 is the utility model main view；
Fig. 2 is the utility model feeding device cross-sectional view；
Fig. 3 is two schematic diagram of the utility model pressing plate；
Wherein, 1 upper furnace body, 2 isolating valves, 3 lower furnace bodies, 4 silica crucibles, 5 feeding devices, 501 connecting shafts, 502 molybdenum rods,
503 pressing plates one, 504 pressing plates two, 505 cylinders, 506 outer barreies, 507 support rings, 508 conically shaped bottoms, 510 elastic rings, 511 nuts
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment, in the utility model embodiment.Technical solution is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Usually here in attached drawing description and
The component of the utility model embodiment shown can be arranged and be designed with a variety of different configurations.Therefore, below to attached
The detailed description of the embodiments of the present invention provided in figure is not intended to limit the range of claimed invention,
But it is merely representative of the selected embodiment of the utility model.Based on the embodiments of the present invention, ordinary skill people
Member's every other embodiment obtained without creative efforts, belongs to the model of the utility model protection
It encloses.
As shown in Figure 1-3, a kind of single crystal growing furnace and the multiple feeding device of quartz, including upper furnace body 1, isolating valve 2, lower furnace body 3,
Crucible 4, quartzy feeding device 5, the upper furnace body 1 are fixed together with 2 upper end of isolating valve, and 2 lower end of isolating valve and lower furnace body 3 are solid
It is scheduled on together, the crucible 4 is fixed in lower furnace body, and the quartz feeding device 5 passes through upper furnace body 1 and isolating valve 2 and gos deep into
Into lower furnace body, the thawing and cooling of silicon material are carried out in lower furnace body 3, isolating valve 2 is conducive to polycrystalline silicon material in feeding device
Observation and processing slag charge, upper furnace body 1 and the interior vertical pulling for carrying out monocrystalline silicon material of isolating valve 2；The quartz feeding device 5 includes connection
Axis 501, molybdenum rod 502, pressing plate 1, pressing plate 2 504, cylinder 505, outer barrel 506, support ring 507, conically shaped bottom 508；Institute
The pressing plate 1 stated is placed on pressing plate 2 504；The pressing plate 2 504 is placed on cylinder 505；The connecting shaft 501
It is connected through a screw thread with 502 one end of molybdenum rod, the molybdenum rod 502 passes through pressing plate 1, pressing plate 2 504, cylinder 505 and taper
Cylinder bottom 508, lower end are tightened in conically shaped bottom 508 by screw thread, and molybdenum rod 502 is by connecting shaft 501 in external control system
Effect is lower to realize lifting, and the lifting of molybdenum rod 502 can the lifting with dynamic pressure plate 1, pressing plate 2 504 and conically shaped bottom 508；Molybdenum rod
502 surface carries out polishing processing, it is therefore an objective to reduce with the frictional force of polycrystalline silicon material.
As advanced optimizing for the present embodiment, the pressing plate 1 is made of two hemihedrism pressing plates；The pressing plate
Fluting among 2 504, flute profile mouth is inserted into molybdenum rod, when feeding device feeds again to be needed to remove pressing plate, it is only necessary to easily
The two halves of pressing plate 1 are taken away, pressing plate 2 504 is removed from notch opposite direction；And 2 504 material of pressing plate 1 and pressing plate
Matter is polytetrafluoroethylene (PTFE), first is that because polytetrafluoroethylene (PTFE) is corrosion-resistant, second is that because polytetrafluoroethylene (PTFE) has certain hardness and strength,
It is more durable.
As advanced optimizing for the present embodiment, the cylinder 505 is the cylindricality barrel structure that upper and lower ends are all open, on
There is edge outstanding in port, and edge outstanding facilitates fixed and taking and placing, the pressing plate 2 504 to be placed on 505 projecting edge of cylinder
On, enclosure space, which is formed, with cylinder bottom holds polycrystalline silicon material.
As advanced optimizing for the present embodiment, 505 material of cylinder is high-purity suprasil, and quartz material is resistance to
High temperature, corrosion-resistant and transparent, doing casing drum can be placed in single crystal growing furnace, and can see polysilicon in cylinder in charging
Whether raw material is filled；But since quartz has certain brittleness, need to handle with care in application and transportational process, so
In the present embodiment, outer barrel and support ring are added in vitro in quartz tube, outer barrel and support ring are stainless steel material, play reinforcing
And supporting role, while quartzy cylinder is protected when transporting；The length of outer barrel only arrives the isolation valve position of furnace body, is not deep into down
In furnace body, guarantee that the product quality of silicon single crystal rod is unaffected.
As advanced optimizing for the present embodiment, 508 narrow end of conically shaped bottom upward, among conically shaped bottom 508 from
Upper end sets gradually three sections of ascending holes to lower end, and molybdenum rod 502 is passed through by narrow end, goes out deeply from wide end, is twisted by nut 511
Tightly in conically shaped bottom, elastic ring 510, fixation of the elastic ring 510 to nut and molybdenum rod are fixed between conically shaped bottom and nut
Anti-loose effect is played with tightening.Elastic ring and nut material are molybdenum, identical as molybdenum rod material, and the fusing point of molybdenum is high, thermal expansion coefficient
Low, property is more stable, is not likely to produce chemical reaction at high temperature and generates the element for being unfavorable for monocrystalline silicon；Or by elastic ring and spiral shell
Matrix face carries out specially treated, and this processing can be oxidation processes, and the purpose of surface treatment is to guarantee in single crystal growing furnace high temperature
The stabilization of elastic ring and nut property does not go bad under state.
In the present embodiment, the least significant end at the conically shaped bottom of the feeding device is set as at a distance from crucible liquid level
110-120mm, experiment proves that, apart from too long or too short all inconvenient polycrystalline silicon material to the dispensing in crucible.
At work, it is put into single crystal growing furnace after the quartz tube body disposable of feeding device being filled it up with, molybdenum rod 502 is put down,
Conically shaped bottom 508 is opened, and polycrystalline silicon material is added in crucible of single crystal furnace, stops blowing when filling it up with crucible, and molybdenum rod is withdrawn, taper
Cylinder bottom closure；In single crystal growing furnace silicon material height melt after volume-diminished, when in crucible the liquid level of liquid at a distance from casing drum bottom
It when between 110-120mm, needs to feed again, molybdenum rod is put down, is fed again into crucible, be added to requirement and stop charging,
It until the crystal silicon material in casing drum has been launched, fills it up with, places into furnace again after casing drum is taken out, repeatedly, realize
Quartzy casing drum repeatedly repeatedly feeds.
Above-mentioned specific embodiment is only the specific case of the utility model, and the scope of patent protection of the utility model includes
But it is not limited to the product form and style of above-mentioned specific embodiment, it is any to meet the utility model claims book and any institute
Belong to the appropriate changes or modifications that the those of ordinary skill of technical field does it, should all fall into the patent protection of the utility model
Range.
Claims (10)
1. a kind of single crystal growing furnace and the multiple feeding device of quartz, including upper furnace body, isolating valve, lower furnace body, crucible, quartz charging dress
It sets；The upper furnace body is fixed together with isolating valve upper end, and isolating valve lower end is fixed together with lower furnace body, and the crucible is fixed
In lower furnace body, the quartz feeding device passes through upper furnace body and isolating valve and is deep into lower furnace body, it is characterised in that: described
Quartzy feeding device includes connecting shaft, molybdenum rod, pressing plate one, pressing plate two, cylinder, outer cylinder, support ring, conically shaped bottom；The pressure
Plate one is placed on pressing plate two；The pressing plate two is placed on cylinder；The connecting shaft and molybdenum rod one end is connected by screw thread
It connects；The molybdenum rod passes through pressing plate one, pressing plate two, cylinder and conically shaped bottom, and lower end is tightened to conically shaped bottom by screw thread
It is interior；The outer barrel wraps up cylinder, and is fixed together with cylinder；The support ring is fixed on outer barrel.
2. a kind of single crystal growing furnace according to claim 1 and the multiple feeding device of quartz, it is characterised in that: the pressing plate one
It is made of symmetrical two halves.
3. a kind of single crystal growing furnace according to claim 1 and the multiple feeding device of quartz, it is characterised in that: the pressing plate two
Open arc groove in one end.
4. a kind of single crystal growing furnace according to claim 1 and the multiple feeding device of quartz, it is characterised in that: the pressing plate one
It is polytetrafluoroethylene (PTFE) with two material of pressing plate.
5. a kind of single crystal growing furnace according to claim 1 and the multiple feeding device of quartz, it is characterised in that: the cylinder is
The taper barrel structure that upper and lower ends are all open, upper port are wide end, and lower port is narrow end, and upper port is equipped with edge outstanding.
6. a kind of single crystal growing furnace according to claim 1 and the multiple feeding device of quartz, it is characterised in that: the cylinder material
Matter is high-purity suprasil.
7. a kind of single crystal growing furnace according to claim 1 and the multiple feeding device of quartz, it is characterised in that: the outer barrel
It is fixedly connected between cylinder, fixed support ring on the outside of the outer barrel；The outer barrel and support ring material is stainless steel.
8. a kind of single crystal growing furnace according to claim 1 and the multiple feeding device of quartz, it is characterised in that: the conically shaped
Bottom narrow end sets gradually three sections of ascending holes from top to bottom upward, among conically shaped bottom, and molybdenum rod is passed through by narrow end, from
Wide end goes out deeply, is tightened in conically shaped bottom by nut, is fixed with elastic ring between conically shaped bottom and nut.
9. a kind of single crystal growing furnace according to claim 8 and the multiple feeding device of quartz, it is characterised in that: the elastic ring
It is molybdenum with nut material.
10. a kind of single crystal growing furnace according to claim 1 and the multiple feeding device of quartz, it is characterised in that: the quartz
The least significant end at the conically shaped bottom of feeding device is 110-120mm at a distance from crucible liquid level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820769928.XU CN208532964U (en) | 2018-05-23 | 2018-05-23 | A kind of single crystal growing furnace and quartzy multiple feeding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820769928.XU CN208532964U (en) | 2018-05-23 | 2018-05-23 | A kind of single crystal growing furnace and quartzy multiple feeding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208532964U true CN208532964U (en) | 2019-02-22 |
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ID=65393977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820769928.XU Expired - Fee Related CN208532964U (en) | 2018-05-23 | 2018-05-23 | A kind of single crystal growing furnace and quartzy multiple feeding device |
Country Status (1)
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| CN (1) | CN208532964U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109778306A (en) * | 2019-03-25 | 2019-05-21 | 中国恩菲工程技术有限公司 | Secondary charging device for single crystal furnace |
| CN110201732A (en) * | 2019-06-26 | 2019-09-06 | 东北大学 | Crucible is used in a kind of experiment of high temperature |
-
2018
- 2018-05-23 CN CN201820769928.XU patent/CN208532964U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109778306A (en) * | 2019-03-25 | 2019-05-21 | 中国恩菲工程技术有限公司 | Secondary charging device for single crystal furnace |
| CN110201732A (en) * | 2019-06-26 | 2019-09-06 | 东北大学 | Crucible is used in a kind of experiment of high temperature |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190222 Termination date: 20200523 |
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| CF01 | Termination of patent right due to non-payment of annual fee |