CN202018995U - 一种通过镀镍键合铜丝连接的半导体发光二极管封装件 - Google Patents

一种通过镀镍键合铜丝连接的半导体发光二极管封装件 Download PDF

Info

Publication number
CN202018995U
CN202018995U CN2011200998039U CN201120099803U CN202018995U CN 202018995 U CN202018995 U CN 202018995U CN 2011200998039 U CN2011200998039 U CN 2011200998039U CN 201120099803 U CN201120099803 U CN 201120099803U CN 202018995 U CN202018995 U CN 202018995U
Authority
CN
China
Prior art keywords
nickel plating
wafer
plating bonding
semiconductor light
brass wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2011200998039U
Other languages
English (en)
Inventor
袁毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN2011200998039U priority Critical patent/CN202018995U/zh
Application granted granted Critical
Publication of CN202018995U publication Critical patent/CN202018995U/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本实用新型公开了一种通过镀镍键合铜丝连接的半导体发光二极管封装件，包括有支架，在支架上设有导电粘胶，在导电粘胶上固定有至少一块晶片；在支架与晶片之间连接有镀镍键合铜丝；所述支架和晶片有密封体密封。所述镀镍键合铜丝包括铜芯线或铜合金芯线，在铜芯线或铜合金芯线的表面包覆有镍层。本实用新型目的是克服了现有技术的不足，提供一种镀镍键合铜丝不容易被氧化、提高接口结合强度和稳定的可靠性的半导体发光二极管封装件。

Description

一种通过镀镍键合铜丝连接的半导体发光二极管封装件
[技术领域]
本实用新型涉及半导体发光二极管，特别涉及到半导体晶片与支架或半导体晶片与半导体晶片之间通过镀镍键合铜丝连接的半导体发光二极管。
[背景技术]
半导体发光二极管即是LED，LED的是英文light emitting diode的缩写。发光二极管，是一种固态的半导体器件。它的基本结构是一块电致发光的晶片，晶片置于一个支架上，一端是负极，另一端连接电源的正极，然后用环氧树脂或其它物质密封。是一种能够将电能转化为可见光的半导体器件。
晶片由三部分组成，一部分是P型半导体，另一端是N型半导体，这两种半导体连接起来的时候，它们之间就形成一个“P-N结”。当电流通过导线(键合丝)作用于这个晶片的时候，电子就会被推向量子阱(P区)，在量子阱内电子跟空穴复合，然后就会以光子的形式发出能量，这就是发光二极管发光的原理。而光的波长也就是光的颜色，是由形成P-N结的材料决定的。
发光二极管封装是保护晶片和完成电气互连，并输出可见光。发光二极管封装结构分有全环氧包封、金属底座环氧封装、陶瓷底座环氧封装及玻璃封装等结构。
晶片粘结或烧结在支架上，通过金属丝与支架连接，并通过焊线机完成接点的结合，然后封装。
半导体发光二极管封装件中的引线键合，就是用非常细小的线把芯片上焊盘和支架连接起来。铜引线键合作为一种可行的、经济的解决方案，已应用在半导体封装中。由于铜引线键合是集成到现有的金引线键合工艺(主要是焊层材料)及封装设备上。所以，目前铜引线键合所占的引线键合比例依然很少，主要是因为铜引线键合面临着一些难点：
其一、键合铜丝容易被氧化；
其二、键合接口结合力不够强壮，可靠性不稳定。
本实用新型是在此种情况下作出的。
[实用新型内容]
本实用新型是克服了现有技术的不足而提供了一种镀镍键合铜丝不容易被氧化、提高接口结合强度和稳定的可靠性的半导体发光二极管封装件。
本实用新型采用下述技术方案：
一种通过镀镍键合铜丝连接的半导体发光二极管封装件，包括有支架，在支架上设有导电粘胶，在导电粘胶上固定有至少一块晶片；其特征在于在支架与晶片之间连接有镀镍键合铜丝；所述支架和晶片有密封体密封。
如上所述的一种通过镀镍键合铜丝连接的半导体发光二极管封装件，其特征在于所述镀镍键合铜丝包括铜芯线或铜合金芯线，在铜芯线或铜合金芯线的表面包覆有镍层。
如上所述的一种通过镀镍键合铜丝连接的半导体发光二极管封装件，其特征在于所述晶片为一块。
如上所述的一种通过镀镍键合铜丝连接的半导体发光二极管封装件，其特征在于所述晶片为两块或两块以上，各个晶片之间通过镀镍键合铜丝连接。
如上所述的一种通过镀镍键合铜丝连接的半导体发光二极管封装件，其特征在于所述镀镍键合铜丝直径范围为0.075mm-0.010mm，镍层厚度为0.1-0.4um。
本实用新型的有益效果是：
由于本实用新型的晶片与支架或晶片与晶片之间通过一种表面镀镍层的键合铜丝连接，这样解决键合铜丝被氧化问题，可在保护气芬下进行键合，提高接口结合强度和稳定的可靠性。镀镍键合铜丝能通过不多的成本增加来获得额外的连接能力提升，提高封装性能和实现高密度封装。
采用键合铜丝连接，可以提供最优的成本，并获得性能上的显着提高。因为：
1、铜的导热性、导电性高于金及铝，因而可提高其热转移效率及功率。
2、铜的机械特性也比金优良，在塑型(Molding)封装时能维持极佳的焊球颈强度及线弧的稳定度。
3、金属间化合物在铜焊点的生成较金焊点减缓许多，因此电阻较小、产生的热量较低，也就能够提高焊点的可靠性及器件的效能。由于铜有较低金属间共金化合物生成率、电阻、热量方面的优势，因此长期的电阻增加现象较小，老化现象较慢。
4、铜的成本相对很低，更是成为替代焊接材料的一大优势。
5、铜焊点的金属间共金化合物生成率较慢，也让高功率器件的封装能够提高可靠性。
[附图说明]
图1为本实用新型结构示意图；
图2为图1的局部放大图；
图3为镀镍键合铜丝实施例一的剖示图；
图4为镀镍键合铜丝实施例二的剖示图。
[具体实施方式]
如图所示，一种通过镀镍键合铜丝连接的半导体发光二极管封装件，包括支架1。具体来说，在支架1上设有导电粘胶4，在导电粘胶4上固定有至少一块晶片3。在支架1与晶片3之间连接有镀镍键合铜丝5。所述支架1和晶片3有密封体6密封，比如密封体可以是环氧树脂等。
本实用新型中，镀镍键合铜丝有多种实施方式。
第一种，如图3所示，镀镍键合铜丝5由铜芯线51和包覆于铜芯线51表面的镍层53组成。
第二种，如图4所示，镀镍键合铜丝5由铜合金芯线52和包覆于铜合金芯线52表面的镍层53组成。
作为本实施例的优选方式，所述镀镍键合铜丝5直径范围为0.075mm-0.010mm，镍层52厚度为0.1-0.4um。
作为本实施例的优选方式，所述晶片3为一块。
作为本实施例的优选方式，所述晶片3为两块或两块以上，各个晶片3之间通过镀镍键合铜丝5连接。

Claims (5)

1.一种通过镀镍键合铜丝连接的半导体发光二极管封装件，包括有支架(1)，在支架(1)上设有导电粘胶(4)，在导电粘胶(4)上固定有至少一块晶片(3)；其特征在于在支架(1)与晶片(3)之间连接有镀镍键合铜丝(5)；所述支架(1)和晶片(3)有密封体(6)密封。
2.根据权利要求1所述的一种通过镀镍键合铜丝连接的半导体发光二极管封装件，其特征在于所述镀镍键合铜丝(5)包括铜芯线(51)或铜合金芯线(52)，在铜芯线(51)或铜合金芯线(52)的表面包覆有镍层(53)。
3.根据权利要求1或2所述的一种通过镀镍键合铜丝连接的半导体发光二极管封装件，其特征在于所述晶片(3)为一块。
4.根据权利要求1或2所述的一种通过镀镍键合铜丝连接的半导体发光二极管封装件，其特征在于所述晶片(3)为两块或两块以上，各个晶片(3)之间通过镀镍键合铜丝(5)连接。
5.根据权利要求1或2所述的一种通过镀镍键合铜丝连接的半导体发光二极管封装件，其特征在于所述镀镍键合铜丝(5)直径范围为0.075mm-0.010mm，镍层(52)厚度为0.1-0.4um。
CN2011200998039U 2011-04-08 2011-04-08 一种通过镀镍键合铜丝连接的半导体发光二极管封装件 Expired - Fee Related CN202018995U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011200998039U CN202018995U (zh) 2011-04-08 2011-04-08 一种通过镀镍键合铜丝连接的半导体发光二极管封装件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011200998039U CN202018995U (zh) 2011-04-08 2011-04-08 一种通过镀镍键合铜丝连接的半导体发光二极管封装件

Publications (1)

Publication Number Publication Date
CN202018995U true CN202018995U (zh) 2011-10-26

Family

ID=44812663

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011200998039U Expired - Fee Related CN202018995U (zh) 2011-04-08 2011-04-08 一种通过镀镍键合铜丝连接的半导体发光二极管封装件

Country Status (1)

Country Link
CN (1) CN202018995U (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465587A (zh) * 2014-12-04 2015-03-25 安徽华晶微电子材料科技有限公司 一种极微细镀镍铜合金丝及其制作方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465587A (zh) * 2014-12-04 2015-03-25 安徽华晶微电子材料科技有限公司 一种极微细镀镍铜合金丝及其制作方法

Similar Documents

Publication Publication Date Title
CN203857313U (zh) 一种高光效的led球泡灯
CN204062952U (zh) 一种led灯具的散热结构
CN203055978U (zh) 倒装基板及基于该倒装基板的led封装结构
TWI513066B (zh) 發光二極體封裝結構
CN202018995U (zh) 一种通过镀镍键合铜丝连接的半导体发光二极管封装件
CN103022332A (zh) 倒装基板及其制造方法及基于该倒装基板的led封装结构
CN103000795B (zh) 半导体发光元件的封装结构
CN202018999U (zh) 一种通过镀钯键合铜丝连接的半导体发光二极管封装件
CN202018994U (zh) 一种通过镀金键合铜丝连接的半导体发光二极管封装件
CN202018996U (zh) 一种通过镀银键合铜丝连接的半导体发光二极管封装件
CN208208785U (zh) 发光二极管
CN102226995B (zh) 一种led封装结构及其制备方法
CN204577455U (zh) 一种倒装led芯片
CN103296173A (zh) 具有侧面电极的led芯片及其封装结构
CN203367346U (zh) 具有侧面电极的led芯片及其封装结构
CN201629348U (zh) 一种半导体发光二极管封装件
CN202172068U (zh) 通过表面包覆钯层的键合银丝连接的发光二极管封装件
CN201629335U (zh) 一种半导体发光二极管二次封装件
CN220209002U (zh) 一种纳米光芯片节能led结构
CN202153537U (zh) 一种半导体发光二极管封装件
CN201555172U (zh) 发光二极管支架
CN201570516U (zh) 一种led封装结构
CN206022425U (zh) 高光效发光二极管倒装芯片封装结构
CN202153539U (zh) 一种通过键合银丝连接的半导体发光二极管二次封装件
CN201262373Y (zh) 绿色3w大功率led的封装结构

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111026

Termination date: 20130408