CN202017070U - Combined crucible for containing silicon material - Google Patents
Combined crucible for containing silicon material Download PDFInfo
- Publication number
- CN202017070U CN202017070U CN2011200319023U CN201120031902U CN202017070U CN 202017070 U CN202017070 U CN 202017070U CN 2011200319023 U CN2011200319023 U CN 2011200319023U CN 201120031902 U CN201120031902 U CN 201120031902U CN 202017070 U CN202017070 U CN 202017070U
- Authority
- CN
- China
- Prior art keywords
- crucible
- silicon material
- silicon
- cover
- splendid attire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model relates to a silicon crystal ingot casting device in the solar photovoltaic field, in particular to a combined crucible for containing silicon material, which effectively solves the technical problem that the utilization rate of conventional quartz crucibles is low. The combined crucible is characterized in that: the combined crucible comprises an upper housing (1) and a lower crucible (2), the upper housing (1) is stacked upon the lower crucible (2), wherein the upper housing (1) is formed by surrounding upper sidewalls (3), the lower crucible (2) consists of lower sidewalls (4) and a bottom plate (5), the lower sidewalls (4) are distributed on the circumference of the bottom plate (5) in a surrounding manner, and a cavity for containing material is defined by the upper sidewalls (3), the lower sidewalls (4) and the bottom plate (5). Consequently, more silicon material can be filled in the combined crucible, the silicon material is melted to become melted silicon, the melted silicon is decreased to the level below the plane of the mouth of the lower crucible, the fill factor of the lower crucible is increased, i.e., the utilization rate of the lower crucible is increased, so that the output of a single furnace per unit time is increased, consequently, a larger and heavier silicon ingot can be produced, and the utilization rate of the silicon material is increased.
Description
Technical field
The utility model relates to a kind of silicon crystal ingot casting device in photovoltaic field, the combined type copple that particularly a kind of splendid attire silicon material is used.
Background technology
In the technology of silicon crystal ingot casting, quartz crucible is used to splendid attire silicon material, and the silicon material is finished fusing, solidified long brilliant whole process in quartz crucible.The silicon material amount of being adorned in the crucible is owing to the shape of silicon material, and reasons such as volume do not reach entity silicon and are full of the due weight of whole crucible.But the ratio of actual institute's loading amount and maximum capacity is called as packing factor.Along with silicon material shape, the difference of volume, this packing factor is reaching 30% to 70% in the production of polysilicon at present, about being 60% under most of situation.With (the GT Solar Technologies of the more U.S. GT Solar Inc. of present use, Inc.) the directed ingot furnace of DSS series polysilicon is an example, when its crucible inside dimension of using is 69cm * 69cm * 42cm, the silicon stockpile is got up to adorn, generally can adorn about 270 kilograms.The ingot casting size 69cm * 69cm * 25cm that grows, packing factor is about 60%.
Because the waste that the higher crystal silicon ingot of size produces when cutting into silico briquette with silicon chip is relative less, its service efficiency is higher.It is very significant making great efforts to obtain size silicon ingot higher, that weight is bigger.Improve the energy consumption that charge amount can reduce the unit silicon chip, crucible consumption, the availability of raising silicon ingot.
In order to reduce silicon crystal ingot casting cost, each crucible need be adorned more silicon material, casts higher silicon ingot, and adopting highly higher crucible is comparatively ideal scheme.But because the restriction of crucible technology of preparing, it is low to make highly higher crucible qualification rate, causes preparing the cost height of high crucible.So it is low to seek a kind of preparation cost, the high crucible that can load more silicon material is very significant for reducing high crucible preparation cost.
At present the polysilicon directional freezing foundry furnace of GT company can obtain polysilicon silicon ingot weight 250-300Kg when using 69cm * 69cm * 42cm crucible, and its physical dimension is at long 69cm * wide 69cm * high 24-27cm.Crucible can utilize insufficient space 60%, and the crucible utilization ratio is low.
Chinese patent application 201010117269.X is disclosed to be the silicon leakage prevention device that a kind of graphite material is made.This device is outside quartz crucible, and plumbago crucible supports quartz crucible to utilize the graphite backplate to be made into up and down.Its objective is to prevent that silicon liquid leakage current from solving the problem that the large size graphite material is difficult to disposable machine-shaping simultaneously that the mode of two joints obtains and " crucible that the silicon crystal of large-sized quartz material is used " supporting graphite backplate then adopt up and down.Its use occasion is to support quartz crucible, rather than direct splendid attire silicon material.It adopts up and down, and the purpose of the mode of joint is: it is convenient to get ingot.Since its down crucible adopt black lead wash to spread upon graphite cake slit and bolt place, behind the high temperature ingot casting, the following crucible formula crucible that is sintered into one.Silicon ingot is in quartz crucible at this moment, if crucible is very high down, then ingot is difficult to take out.201010117269.X adopted the scheme that the graphite backplate is divided into two-section, will go up crucible when getting ingot earlier and take out, with crucible device ingot is poured out again, the scheme of two-section helps the taking-up of ingot up and down.Unexposed 201010117269.X " adopting two joint modes up and down, the crucible of the direct splendid attire silicon material that quartz material is made " technology contents.
201010117269.X disclosed is that mode of connection between each graphite cake of crucible of a kind of graphite material is the carbon fiber screw, and each graphite cake junction of plumbago crucible applies black lead wash down, is fired into all-in-one-piece crucible down at last.
Summary of the invention
The utility model proposes the high crucible of a kind of built-up type cheaply, solved the high technical problem of high quartz crucible preparation cost.
Another technical problem that the utility model solves is to have solved the low technical problem of existing quartz crucible utilization ratio well.
The technical solution of the utility model is:
The combined type copple that a kind of splendid attire silicon material is used, wherein: comprise cover, following crucible, last cover overlay down crucible directly over, wherein go up and cover by upper side wall around forming, following crucible comprises lower wall and base plate, lower wall around be distributed in base plate around, upper side wall, lower wall and base plate surround the cavity that can place material jointly.
The combined type copple that a kind of splendid attire silicon material is used, wherein: go up between cover and the following crucible and smear caking agent.
The combined type copple that a kind of splendid attire silicon material is used, wherein: the aspect ratio scope that goes up cover and following crucible is at 0.01:1-1:1.
The combined type copple that a kind of splendid attire silicon material is used, wherein: the aspect ratio scope that goes up cover and following crucible is at 0.1:1-1:1.
The combined type copple that a kind of splendid attire silicon material is used, wherein: following crucible is made by quartz material.
The combined type copple that a kind of splendid attire silicon material is used, wherein: go up cover and make by quartz material, can be with obtaining after the cutting of crucible substandard products.
The combined type copple that a kind of splendid attire silicon material is used, wherein: go up cover and make, can reuse by graphite, silicon nitride, silicon carbide or boron nitride material.
The combined type copple that a kind of splendid attire silicon material is used, wherein: between the lower wall and base plate of following crucible, the connection between the lower wall is the integral type seamless link.
The combined type copple that a kind of splendid attire silicon material is used, wherein: the connection of going up between the upper side wall that covers is the integral type seamless link.
The combined type copple that a kind of splendid attire silicon material is used, wherein: go up and adopt the screw screw fixed form that cooperatively interacts to connect between the upper side wall that covers.
The combined type copple that a kind of splendid attire silicon material is used, wherein: go up and adopt the chase mortise fixed form that cooperatively interacts to connect between the upper side wall that covers.
The combined type copple that a kind of splendid attire silicon material is used, wherein: caking agent can mixing for silicon sol and silicon nitride.
201010117269.X disclosed is that mode of connection between each graphite cake of crucible of a kind of graphite material is the carbon fiber screw, and each graphite cake junction of plumbago crucible applies black lead wash down, is fired into all-in-one-piece crucible down at last.
The key distinction of the two is as follows:
Table 1:
Adopt the mode that directly stacks between last cover and the following crucible, this thinks that silicon liquid flows out to have easily and conflicts with traditional from the slit between last cover and the following crucible, the utility model is at the initial stage of research, for the sake of security, adhere between last cover and following crucible, adopting binding agent all the time, for example adopt the mode of the mixture of smearing silicon sol and silicon nitride to prevent possible silicon liquid to leak, but after the following test of process is groped, find directly to stack and also can not cause leaking, but need control to go up the aspect ratio of cover and following crucible, specific as follows:
The silicon material that table 2(test is adopted is the mixing of multiple shape silicon material, and packing factor is about 60%)
The silicon material that table 3(test is adopted is the mixing of multiple shape silicon material, and packing factor is about 60%)
From table 2 and table 3 as can be seen, loading the silicon material at crucible is the mixing of multiple shape silicon material, packing factor is under about 60% the situation, adopt the mode that directly stacks between last cover and the following crucible, with low cost, be easy to implement, still need control to go up the aspect ratio of cover and following crucible, the aspect ratio scope is suitable at 0.1-0.5:1.Adopt binding agent between last cover and the following crucible, do not need to control the aspect ratio of cover and following crucible, but implementation cost is high and the enforcement trouble.Take all factors into consideration abovely, and according to present needs of production, the mode that employing directly stacks between last cover and the following crucible is a preferred version of the present utility model.
When adopting binding agent between cover and the following crucible on the utility model, be not limited to cover and the two-segment type structure that following crucible makes up, can also above last cover, be superimposed with cover again, adopt caking agent to link into an integrated entity between the last cover.
Since the shape of silicon material, the difference of volume, the packing factor of crucible is difference owing to the silicon material of different shapes, volume, and for example difform silicon material has silica flour, silicon chip, silico briquette, broken silicon material etc.Through the experiment measuring and calculating, their loading density is as follows:
The loading density of the various silicon material of table 4
In polycrystalline silicon ingot casting charging process, generally need the different silicon material of collocation, comprise pure material, the flaw-piece material is expected broken silicon wafers, silica flour etc. end to end.Therefore integrate, the packing factor of silicon material is generally 60% in the actual production.Therefore routinely, the height ratio between last cover and the following crucible is that 40%:60%=0.66:1 is the ratio that embodies the saving efficient of cover most, by general reasoning, can orientate the height ratio limit that goes up between cover and the following crucible as 0.66:1.
But because the thawing of silicon material and stay and need the regular hour, silicon feed liquid face melts along with the silicon material and descends gradually, and the liquid level of this process can not surpass the slit of last cover and following crucible.Liquid level when therefore upward the gap position of cover and following crucible melts fully except needs are higher than the silicon material also needs to leave certain safe altitude.Test shows that the height ratio between cover and the following crucible is the probability of 0.6:1 with regard to having occurred leaking, and exists certain potential safety hazard.After taking all factors into consideration the each side factor, " adopt the mode that directly stacks on the utility model between cover and the following crucible: the aspect ratio scope that goes up cover and following crucible is at 0.1-0.5:1." technical scheme is suitable.If it is last cover is highly too low, difficult to embody the saving efficient of the utility model combination crucible.
But crucible is loaded under the situation of silica flour or fragment fully, because the packing factor of silica flour or broken silicon wafers is few, silica flour is 36.9%, broken silicon wafers is 33.9%, therefore routinely, when whole filling silica flour, last cover and following crucible between height ratio be 63.1%:36.9%=1.71:1; When whole filling broken silicon wafers, the height ratio between last cover and the following crucible is 66.1%:33.9%=1.95:1; If adopt the height ratio that goes up between cover and the following crucible simultaneously greater than 1:1, last cover adopts the mode that directly stacks with following crucible, consider the height and the cost of manufacture of cover, so when all adorning silica flour, it is suitable that the height ratio limit that goes up between cover and the following crucible of the present utility model is finally orientated 1:1 as.
The implementation result that table 5 the utility model is applied to silicon crystal ingot casting and prior art compares
Common quartz crucible in the utility model is meant the quartz crucible of altitude range at 350-420mm, and high quartzy earthenware is the quartz crucible of altitude range at 480-550mm.Following crucible in the utility model is a common quartz crucible of the prior art.
Advantage of the present utility model: on the one hand, the combined type copple that the splendid attire silicon material that the utility model provides is used can replace the function of high quartz crucible, can load more silicon material, the combined type copple preparation cost that splendid attire silicon material of the present utility model is used is low, and high quartz crucible is because the restriction of existing technology of preparing, qualification rate is low, the preparation cost height; On the other hand, the combined type copple that the splendid attire silicon material that the utility model provides is used is at following crucible, be to have stacked last cover on the common crucible of the prior art, can realize loading more silicon material like this, after the fusing of silicon material, become silicon liquid, silicon liquid is reduced to down below the mouth of pot facial planes, improve the packing factor of time crucible, promptly improved the utilization ratio of time crucible, made the quantum of output of single stove unit time be improved, thereby obtain the silicon ingot that size is higher, weight is bigger, improved the utilization ratio of silicon material.The utility model can also utilize the middle defect ware of crucible production process to process cover, is combined into high crucible, thereby has saved the production cost of direct high crucible, has realized utilization of waste material.
Reference numeral
Accompanying drawing 1 is the structural representation of facing of the utility model embodiment 2.
Accompanying drawing 3 is the structural representations of facing of the utility model embodiment 3.
Accompanying drawing 5 is structural representations of facing of going up cover 1 of the present utility model.
Accompanying drawing 6 is plan structure synoptic diagram of going up cover 1 of the present utility model.
Accompanying drawing 7 is the structural representations of facing of crucible 2 down of the present utility model.
Accompanying drawing 8 is plan structure synoptic diagram of crucible 2 down of the present utility model.
Accompanying drawing 9 be prior art common crucible face structural representation.
Accompanying drawing 10 is plan structure synoptic diagram of the common crucible of prior art.
Accompanying drawing 11 is the view after the utility model is applied to the filling silicon material of silicon crystal ingot casting.
Accompanying drawing 12 is that the common crucible of prior art is applied to the view after the silicon crystal ingot casting is loaded the silicon material.
Accompanying drawing 13 is the view after the utility model is applied to the silicon material fusing of silicon crystal ingot casting.
Accompanying drawing 14 is the view after the common crucible of prior art is applied to the fusing of silicon crystal ingot casting silicon material.
Description of drawings: on cover 1, following crucible 2, upper side wall 3, lower wall 4, base plate 5, common crucible 6, silicon material 7, silicon liquid 8, caking agent 9.
Embodiment
The combined type copple that embodiment 1, a kind of splendid attire silicon material are used, wherein: comprise cover 1, following crucible 2, last cover 1 overlay down crucible 2 directly over, wherein last cover 1 is centered on by upper side wall 3 to be formed, following crucible 2 comprises lower wall 4 and base plate 5, lower wall 4 around be distributed in base plate around, upper side wall 3, lower wall 4 surround the cavity that can place material jointly with base plate 5.
The combined type copple that embodiment 2, a kind of splendid attire silicon material are used, wherein: comprise cover 1, following crucible 2, last cover 1 directly overlay down crucible 2 directly over, wherein last cover 1 is centered on by upper side wall 3 to be formed, following crucible 2 comprises lower wall 4 and base plate 5, lower wall 4 around be distributed in base plate around, upper side wall 3, lower wall 4 surround the cavity that can place material jointly with base plate 5.
The combined type copple that embodiment 3, a kind of splendid attire silicon material are used, wherein: on cover 1 and following crucible 2 between smear caking agent 9.All the other are with embodiment 1.
The combined type copple that embodiment 4, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.01:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 5, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.1:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 6, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.2:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 7, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.3:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 8, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.4:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 9, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.5:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 10, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.6:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 11, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.7:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 12, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.8:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 13, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.9:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 14, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 1:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 15, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 1.1:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 16, a kind of splendid attire silicon material are used, wherein: following crucible 2 is made by quartz material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 17, a kind of splendid attire silicon material are used, wherein: on cover 1 and make by quartz material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 18, a kind of splendid attire silicon material are used, wherein: on cover 1 and make by graphite material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 19, a kind of splendid attire silicon material are used, wherein: on cover 1 and make by silicon nitride material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 20, a kind of splendid attire silicon material are used, wherein: on cover 1 and make by carbofrax material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 21, a kind of splendid attire silicon material are used, wherein: on cover 1 and make by boron nitride material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 22, a kind of splendid attire silicon material are used, wherein: between the lower wall 4 and base plate 5 of following crucible 2, the connection between the lower wall 4 is the integral type seamless link.All the other are with embodiment 1.
The combined type copple that embodiment 23, a kind of splendid attire silicon material are used, wherein: on the connection of covering between 1 the upper side wall 3 be the integral type seamless link.All the other are with embodiment 1.
The combined type copple that embodiment 24, a kind of splendid attire silicon material are used, wherein: on cover and adopt the screw screw fixed form that cooperatively interacts to connect between 1 the upper side wall 3.All the other are with embodiment 1.
The combined type copple that embodiment 25, a kind of splendid attire silicon material are used, wherein: on cover and adopt the chase mortise fixed form that cooperatively interacts to connect between 1 the upper side wall 3.All the other are with embodiment 1.
The combined type copple that embodiment 26, a kind of splendid attire silicon material are used, wherein: caking agent 9 is a silicon sol and the mixing of silicon nitride.All the other are with embodiment 3.
Explain principle of work of the present utility model in conjunction with the embodiments: basic ideas of the present utility model are because the restriction of silicon material 7 geomeries of adorning, common crucible 6 packing factors are little, after the initial silicon material of being adorned melts in common crucible 6,8 declines of silicon liquid, common crucible 6 has nearly half space to be available on silicon liquid 8 surfaces, common crucible 6 packing factors are little, and common crucible 6 utilization ratios are low; And high quartz crucible is because the restriction of existing technology of preparing, and qualification rate is low, the preparation cost height.So the utility model is at existing crucible, be that crucible 2 tops down of the present utility model stack a upward cover 1 that is surrounded into certain volume by upper side wall 3, realize loading more silicon material 7, after 7 fusings of silicon material, silicon material 7 becomes silicon liquid 8, silicon liquid 8 is reduced to down below the crucible 2 oral area planes, being provided with of above cover 1 realized having loaded more silicon material.
Claims (7)
1. the combined type copple that splendid attire silicon material is used is characterized in that: comprise cover (1), following crucible
(2), last cover (1) overlay down crucible (2) directly over, wherein last cover (1) is centered on by upper side wall (3) and forms, following crucible (2) comprises lower wall (4) and base plate (5), lower wall (4) around be distributed in base plate around, upper side wall (3), lower wall (4) surround the cavity that can place material jointly with base plate (5).
2. the combined type copple that a kind of splendid attire silicon material as claimed in claim 1 is used is characterized in that: go up between cover (1) and the following crucible (2) and smear caking agent (9).
3. the combined type copple that a kind of splendid attire silicon material as claimed in claim 1 is used is characterized in that: the aspect ratio scope that goes up cover (1) and following crucible (2) is at 0.01:1-1:1.
4. the combined type copple of using as the described a kind of splendid attire silicon material of claim 1, it is characterized in that: between the lower wall (4) and base plate (5) of following crucible (2), the connection between the lower wall (4) is the integral type seamless link.
5. the combined type copple that a kind of splendid attire silicon material as claimed in claim 1 is used is characterized in that: the connection of going up between the upper side wall (3) that covers (1) is the integral type seamless link.
6. the combined type copple that a kind of splendid attire silicon material as claimed in claim 1 is used is characterized in that: go up and adopt the screw screw fixed form that cooperatively interacts to connect between the upper side wall (3) that covers (1).
7. the combined type copple that a kind of splendid attire silicon material as claimed in claim 1 is used is characterized in that: go up and adopt the chase mortise fixed form that cooperatively interacts to connect between the upper side wall (3) that covers (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200319023U CN202017070U (en) | 2011-01-30 | 2011-01-30 | Combined crucible for containing silicon material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200319023U CN202017070U (en) | 2011-01-30 | 2011-01-30 | Combined crucible for containing silicon material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202017070U true CN202017070U (en) | 2011-10-26 |
Family
ID=44810744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200319023U Expired - Fee Related CN202017070U (en) | 2011-01-30 | 2011-01-30 | Combined crucible for containing silicon material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202017070U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060922A (en) * | 2013-01-18 | 2013-04-24 | 奕雪春 | Volume-adjustable combined type crucible |
| CN103601357A (en) * | 2013-11-28 | 2014-02-26 | 泗阳瑞泰光伏材料有限公司 | Process method for purifying polycrystalline silicon powder by utilizing ingot casting furnace |
| CN104142059A (en) * | 2013-05-10 | 2014-11-12 | 大连融德特种材料有限公司 | Crucible for preparing aluminum-base intermediate alloy through aluminothermic reduction method |
| CN108374197A (en) * | 2018-02-26 | 2018-08-07 | 西安理工大学 | A kind of graphite crucible increasing growing silicon carbice crystals length |
-
2011
- 2011-01-30 CN CN2011200319023U patent/CN202017070U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060922A (en) * | 2013-01-18 | 2013-04-24 | 奕雪春 | Volume-adjustable combined type crucible |
| CN104142059A (en) * | 2013-05-10 | 2014-11-12 | 大连融德特种材料有限公司 | Crucible for preparing aluminum-base intermediate alloy through aluminothermic reduction method |
| CN104142059B (en) * | 2013-05-10 | 2016-04-13 | 大连融德特种材料有限公司 | A kind of crucible preparing contained aluminium-base intermediate alloy for aluminothermic process |
| CN103601357A (en) * | 2013-11-28 | 2014-02-26 | 泗阳瑞泰光伏材料有限公司 | Process method for purifying polycrystalline silicon powder by utilizing ingot casting furnace |
| CN108374197A (en) * | 2018-02-26 | 2018-08-07 | 西安理工大学 | A kind of graphite crucible increasing growing silicon carbice crystals length |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102071457A (en) | Combined crucible for accommodating silicon materials | |
| CN202017070U (en) | Combined crucible for containing silicon material | |
| CN102758242B (en) | Charging method in monocrystalline silicon ingot casting, and monocrystalline silicon ingot casting method | |
| CN101906657A (en) | System for manufacturing single crystal ingot | |
| CN212223147U (en) | Novel high-purity coating crucible for polycrystalline silicon ingot casting | |
| CN103351000A (en) | Deposition of high-purity silicon via high-surface area gas-solid or gas-liquid interfaces and recovery via liqued phase | |
| CN101805922A (en) | Heat shielding and ingot furnace with same | |
| CN102605418A (en) | Solar cell substrate, manufacturing method of solar cell and crucible used for same | |
| CN104342750A (en) | Quartz crucible and preparation method thereof | |
| CN105818485A (en) | Quartz crucible coating used for polycrystalline silicon ingot and preparation method thereof | |
| CN202164381U (en) | Reusable crucible for ingoting | |
| CN202265623U (en) | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon | |
| TWI798177B (en) | Crucible for growing silicon ingots and method for preparing a crucible for growing silicon ingots | |
| CN111511965A (en) | Hybrid crucible assembly for pulling crystal growth | |
| CN201553616U (en) | Silicon nitride crucible for polycrystalline silicon solar cell casting | |
| CN202072797U (en) | Quartz crucible heightening device for polycrystalline silicon ingot casting | |
| CN101602505B (en) | Crucible support for preventing silicone fluid leakage flow in field of polysilicon production | |
| CN215413190U (en) | Dumping furnace brown corundum receiving bag | |
| CN1956921B (en) | Cooled lump from molten silicon and process for producing the same | |
| CN207217717U (en) | A kind of novel battery bag heat abstractor | |
| JPS5826019A (en) | Casting method for polycrystalline silicon ingot | |
| CN201695108U (en) | Heat shield and ingot casting furnace with same | |
| CN202755097U (en) | Quartz ceramic crucible for polycrystalline silicon | |
| CN101871124A (en) | System for manufacturing polycrystalline ingot with improved charging capability | |
| CN103255471A (en) | Crystalline silicon and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111026 Termination date: 20190130 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |