CN102071457A - Combined crucible for accommodating silicon materials - Google Patents

Combined crucible for accommodating silicon materials Download PDF

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Publication number
CN102071457A
CN102071457A CN2011100322800A CN201110032280A CN102071457A CN 102071457 A CN102071457 A CN 102071457A CN 2011100322800 A CN2011100322800 A CN 2011100322800A CN 201110032280 A CN201110032280 A CN 201110032280A CN 102071457 A CN102071457 A CN 102071457A
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crucible
silicon material
silicon
splendid attire
combined type
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胡动力
张涛
钟德京
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LDK Solar Co Ltd
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LDK Solar Co Ltd
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Abstract

The invention relates to an ingot casting device for a silicon crystal in the field of solar photovoltaic, in particular to a combined crucible for accommodating silicon materials, and well solves the technical problem of low utilization rate of the conventional quartz crucible. The crucible is characterized by comprising an upper cover 1 and a lower crucible 2, wherein the upper cover 1 is stacked over the lower crucible 2 and is enclosed by an upper side wall 3; the lower crucible 2 comprises a lower side wall 4 and a bottom plate 5; the lower side wall 4 encloses the periphery of the bottom plate; and the upper side wall 3, the lower side wall 4 and the bottom plate 5 jointly form a cavity capable of accommodating materials. Therefore, more silicon materials can be filled, silicon liquid falls below an opening plane of the lower crucible after the silicon materials are melted into the silicon liquid, and the filling factor of the lower crucible is improved, namely the utilization rate of the lower crucible is improved, so that the yield of a single furnace per unit time is improved, silicon ingots with higher size and heavier weight are obtained, and the utilization rate of the silicon materials is improved.

Description

The combined type copple that a kind of splendid attire silicon material is used
Technical field
The present invention relates to a kind of silicon crystal ingot casting device in photovoltaic field, the combined type copple that particularly a kind of splendid attire silicon material is used.
Background technology
In the technology of silicon crystal ingot casting, quartz crucible is used to splendid attire silicon material, and the silicon material is finished fusing, solidified long brilliant whole process in quartz crucible.The silicon material amount of being adorned in the crucible is owing to the shape of silicon material, and reasons such as volume do not reach entity silicon and are full of the due weight of whole crucible.But the ratio of actual institute's loading amount and maximum capacity is called as packing factor.Along with silicon material shape, the difference of volume, this packing factor is reaching 30% to 70% in the production of polysilicon at present, about being 60% under most of situation.With (the GT Solar Technologies of the more U.S. GT Solar Inc. of present use, Inc.) the directed ingot furnace of DSS series polysilicon is an example, when its crucible inside dimension of using is 69cm * 69cm * 42cm, the silicon stockpile is got up to adorn, generally can adorn about 270 kilograms.The ingot casting size 69cm * 69cm * 25cm that grows, packing factor is about 60%.
Because the waste that the higher crystal silicon ingot of size produces when cutting into silico briquette with silicon chip is relative less, its service efficiency is higher.It is very significant making great efforts to obtain size silicon ingot higher, that weight is bigger.Improve the energy consumption that charge amount can reduce the unit silicon chip, crucible consumption, the availability of raising silicon ingot.
In order to reduce silicon crystal ingot casting cost, each crucible need be adorned more silicon material, casts higher silicon ingot, and adopting highly higher crucible is comparatively ideal scheme.But because the restriction of crucible technology of preparing, it is low to make highly higher crucible qualification rate, causes preparing the cost height of high crucible.So it is low to seek a kind of preparation cost, the high crucible that can load more silicon material is very significant for reducing high crucible preparation cost.
At present the polysilicon directional freezing foundry furnace of GT company can obtain polysilicon silicon ingot weight 250-300Kg when using 69cm * 69cm * 42cm crucible, and its physical dimension is at long 69cm * wide 69cm * high 24-27cm.Crucible can utilize insufficient space 60%, and the crucible utilization ratio is low.
Chinese patent application 201010117269.X is disclosed to be the silicon leakage prevention device that a kind of graphite material is made.This device is outside quartz crucible, and plumbago crucible supports quartz crucible to utilize the graphite backplate to be made into up and down.The purpose of its invention is to prevent that silicon liquid leakage current from solving the problem that the large size graphite material is difficult to disposable machine-shaping simultaneously, and the mode of two joints obtains and " crucible that the silicon crystal of large-sized quartz material is used " supporting graphite backplate then adopt up and down.Its use occasion is to support quartz crucible, rather than direct splendid attire silicon material.It adopts up and down, and the purpose of the mode of joint is: it is convenient to get ingot.Since its down crucible adopt black lead wash to spread upon graphite cake slit and bolt place, behind the high temperature ingot casting, the following crucible formula crucible that is sintered into one.Silicon ingot is in quartz crucible at this moment, if crucible is very high down, then ingot is difficult to take out.201010117269.X adopted the scheme that the graphite backplate is divided into two-section, will go up crucible when getting ingot earlier and take out, with crucible device ingot is poured out again, the scheme of two-section helps the taking-up of ingot up and down.Unexposed 201010117269.X " adopting two joint modes up and down, the crucible of the direct splendid attire silicon material that quartz material is made " technology contents.
201010117269.X disclosed is that mode of connection between each graphite cake of crucible of a kind of graphite material is the carbon fiber screw, and each graphite cake junction of plumbago crucible applies black lead wash down, is fired into all-in-one-piece crucible down at last.
Summary of the invention
The present invention proposes the high crucible of a kind of built-up type cheaply, solved the high technical problem of high quartz crucible preparation cost.
Another technical problem that the present invention solves is to have solved the low technical problem of existing quartz crucible utilization ratio well.
Technical scheme of the present invention is:
The combined type copple that a kind of splendid attire silicon material is used, wherein: comprise cover, following crucible, last cover overlay down crucible directly over, wherein go up and cover by upper side wall around forming, following crucible comprises lower wall and base plate, lower wall around be distributed in base plate around, upper side wall, lower wall and base plate surround the cavity that can place material jointly.
The combined type copple that a kind of splendid attire silicon material is used, wherein: go up between cover and the following crucible and smear caking agent.
The combined type copple that a kind of splendid attire silicon material is used, wherein: the aspect ratio scope that goes up cover and following crucible is at 0.01:1-1:1.
The combined type copple that a kind of splendid attire silicon material is used, wherein: the aspect ratio scope that goes up cover and following crucible is at 0.1:1-1:1.
The combined type copple that a kind of splendid attire silicon material is used, wherein: following crucible is made by quartz material.
The combined type copple that a kind of splendid attire silicon material is used, wherein: go up cover and make by quartz material, can be with obtaining after the cutting of crucible substandard products.
The combined type copple that a kind of splendid attire silicon material is used, wherein: go up cover and make, can reuse by graphite, silicon nitride, silicon carbide or boron nitride material.
The combined type copple that a kind of splendid attire silicon material is used, wherein: between the lower wall and base plate of following crucible, the connection between the lower wall is the integral type seamless link.
The combined type copple that a kind of splendid attire silicon material is used, wherein: the connection of going up between the upper side wall that covers is the integral type seamless link.
The combined type copple that a kind of splendid attire silicon material is used, wherein: go up and adopt the screw screw fixed form that cooperatively interacts to connect between the upper side wall that covers.
The combined type copple that a kind of splendid attire silicon material is used, wherein: go up and adopt the chase mortise fixed form that cooperatively interacts to connect between the upper side wall that covers.
The combined type copple that a kind of splendid attire silicon material is used, wherein: caking agent can mixing for silicon sol and silicon nitride.
201010117269.X disclosed is that mode of connection between each graphite cake of crucible of a kind of graphite material is the carbon fiber screw, and each graphite cake junction of plumbago crucible applies black lead wash down, is fired into all-in-one-piece crucible down at last.
The key distinction of the two is as follows:
Table 1
Figure 2011100322800100002DEST_PATH_IMAGE002
Adopt the mode that directly stacks between last cover and the following crucible, this thinks that silicon liquid flows out to have easily and conflicts with traditional from the slit between last cover and the following crucible, the present invention is at the initial stage of research, for the sake of security, adhere between last cover and following crucible, adopting binding agent all the time, for example adopt the mode of the mixture of smearing silicon sol and silicon nitride to prevent possible silicon liquid to leak, but after the following test of process is groped, find directly to stack and also can not cause leaking, but need control to go up the aspect ratio of cover and following crucible, specific as follows:
The silicon material that table 2(test is adopted is the mixing of multiple shape silicon material, and packing factor is about 60%)
Figure 2011100322800100002DEST_PATH_IMAGE003
The silicon material that table 3(test is adopted is the mixing of multiple shape silicon material, and packing factor is about 60%)
From table 2 and table 3 as can be seen, loading the silicon material at crucible is the mixing of multiple shape silicon material, packing factor is under about 60% the situation, adopt the mode that directly stacks between last cover and the following crucible, with low cost, be easy to implement, still need control to go up the aspect ratio of cover and following crucible, the aspect ratio scope is suitable at 0.1-0.5:1.Adopt binding agent between last cover and the following crucible, do not need to control the aspect ratio of cover and following crucible, but implementation cost is high and the enforcement trouble.Take all factors into consideration abovely, and according to present needs of production, the mode that employing directly stacks between last cover and the following crucible is a preferred version of the present invention.
When adopting binding agent between cover and the following crucible in the present invention, be not limited to cover and the two-segment type structure that following crucible makes up, can also above last cover, be superimposed with cover again, adopt caking agent to link into an integrated entity between the last cover.
Since the shape of silicon material, the difference of volume, the packing factor of crucible is difference owing to the silicon material of different shapes, volume, and for example difform silicon material has silica flour, silicon chip, silico briquette, broken silicon material etc.Through the experiment measuring and calculating, their loading density is as follows:
The loading density of the various silicon material of table 4
In polycrystalline silicon ingot casting charging process, generally need the different silicon material of collocation, comprise pure material, the flaw-piece material is expected broken silicon wafers, silica flour etc. end to end.Therefore integrate, the packing factor of silicon material is generally 60% in the actual production.Therefore routinely, the height ratio between last cover and the following crucible is that 40%:60%=0.66:1 is the ratio that embodies the saving efficient of cover most, by general reasoning, can orientate the height ratio limit that goes up between cover and the following crucible as 0.66:1.
But because the thawing of silicon material and stay and need the regular hour, silicon feed liquid face melts along with the silicon material and descends gradually, and the liquid level of this process can not surpass the slit of last cover and following crucible.Liquid level when therefore upward the gap position of cover and following crucible melts fully except needs are higher than the silicon material also needs to leave certain safe altitude.Test shows that the height ratio between cover and the following crucible is the probability of 0.6:1 with regard to having occurred leaking, and exists certain potential safety hazard.After taking all factors into consideration the each side factor, " adopt the mode that directly stacks in the present invention between cover and the following crucible: the aspect ratio scope that goes up cover and following crucible is at 0.1-0.5:1." technical scheme is suitable.If it is last cover is highly too low, difficult to embody the saving efficient that the present invention makes up crucible.
But crucible is loaded under the situation of silica flour or fragment fully, because the packing factor of silica flour or broken silicon wafers is few, silica flour is 36.9%, broken silicon wafers is 33.9%, therefore routinely, when whole filling silica flour, last cover and following crucible between height ratio be 63.1%:36.9%=1.71:1; When whole filling broken silicon wafers, the height ratio between last cover and the following crucible is 66.1%:33.9%=1.95:1; If adopt the height ratio that goes up between cover and the following crucible simultaneously greater than 1:1, last cover adopts the mode that directly stacks with following crucible, consider the height and the cost of manufacture of cover, so when all adorning silica flour, it is suitable that the height ratio limit that goes up between cover and the following crucible of the present invention is finally orientated 1:1 as.
The implementation result that table 5 the present invention is applied to silicon crystal ingot casting and prior art compares
Figure 2011100322800100002DEST_PATH_IMAGE006
Common quartz crucible among the present invention is meant the quartz crucible of altitude range at 350-420mm, Gao Shi
The English earthenware is the quartz crucible of altitude range at 480-550mm.Following crucible among the present invention is a common quartz crucible of the prior art.
Advantage of the present invention: on the one hand, the combined type copple that splendid attire silicon material provided by the invention is used can replace the function of high quartz crucible, can load more silicon material, the combined type copple preparation cost that splendid attire silicon material of the present invention is used is low, and high quartz crucible is because the restriction of existing technology of preparing, qualification rate is low, the preparation cost height; On the other hand, the combined type copple that splendid attire silicon material provided by the invention is used is at following crucible, be to have stacked last cover on the common crucible of the prior art, can realize loading more silicon material like this, after the fusing of silicon material, become silicon liquid, silicon liquid is reduced to down below the mouth of pot facial planes, improve the packing factor of time crucible, promptly improved the utilization ratio of time crucible, made the quantum of output of single stove unit time be improved, thereby obtain the silicon ingot that size is higher, weight is bigger, improved the utilization ratio of silicon material.The present invention can also utilize the middle defect ware of crucible production process to process cover, is combined into high crucible, thereby has saved the production cost of direct high crucible, has realized utilization of waste material.
Reference numeral
Accompanying drawing 1 is the structural representation of facing of the embodiment of the invention 2.
Accompanying drawing 2 is plan structure synoptic diagram of the embodiment of the invention 2.
Accompanying drawing 3 is the structural representations of facing of the embodiment of the invention 3.
Accompanying drawing 4 is plan structure synoptic diagram of the embodiment of the invention 3.
Accompanying drawing 5 is structural representations of facing of going up cover 1 of the present invention.
Accompanying drawing 6 is plan structure synoptic diagram of going up cover 1 of the present invention.
Accompanying drawing 7 is the structural representations of facing of crucible 2 down of the present invention.
Accompanying drawing 8 is plan structure synoptic diagram of crucible 2 down of the present invention.
Accompanying drawing 9 be prior art common crucible face structural representation.
Accompanying drawing 10 is plan structure synoptic diagram of the common crucible of prior art.
Accompanying drawing 11 is the view after the present invention is applied to the filling silicon material of silicon crystal ingot casting.
Accompanying drawing 12 is that the common crucible of prior art is applied to the view after the silicon crystal ingot casting is loaded the silicon material.
Accompanying drawing 13 is the view after the present invention is applied to the silicon material fusing of silicon crystal ingot casting.
Accompanying drawing 14 is the view after the common crucible of prior art is applied to the fusing of silicon crystal ingot casting silicon material.
Description of drawings: on cover 1, following crucible 2, upper side wall 3, lower wall 4, base plate 5, common crucible 6, silicon material 7, silicon liquid 8, caking agent 9.
Embodiment
The combined type copple that embodiment 1, a kind of splendid attire silicon material are used, wherein: comprise cover 1, following crucible 2, last cover 1 overlay down crucible 2 directly over, wherein last cover 1 is centered on by upper side wall 3 to be formed, following crucible 2 comprises lower wall 4 and base plate 5, lower wall 4 around be distributed in base plate around, upper side wall 3, lower wall 4 surround the cavity that can place material jointly with base plate 5.
The combined type copple that embodiment 2, a kind of splendid attire silicon material are used, wherein: comprise cover 1, following crucible 2, last cover 1 directly overlay down crucible 2 directly over, wherein last cover 1 is centered on by upper side wall 3 to be formed, following crucible 2 comprises lower wall 4 and base plate 5, lower wall 4 around be distributed in base plate around, upper side wall 3, lower wall 4 surround the cavity that can place material jointly with base plate 5.
The combined type copple that embodiment 3, a kind of splendid attire silicon material are used, wherein: on cover 1 and following crucible 2 between smear caking agent 9.All the other are with embodiment 1.
The combined type copple that embodiment 4, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.01:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 5, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.1:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 6, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.2:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 7, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.3:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 8, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.4:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 9, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.5:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 10, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.6:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 11, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.7:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 12, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.8:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 13, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 0.9:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 14, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 1:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 15, a kind of splendid attire silicon material are used, wherein: on cover 1 with the aspect ratio of following crucible 2 be 1.1:1.All the other are with embodiment 1 or embodiment 2.
The combined type copple that embodiment 16, a kind of splendid attire silicon material are used, wherein: following crucible 2 is made by quartz material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 17, a kind of splendid attire silicon material are used, wherein: on cover 1 and make by quartz material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 18, a kind of splendid attire silicon material are used, wherein: on cover 1 and make by graphite material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 19, a kind of splendid attire silicon material are used, wherein: on cover 1 and make by silicon nitride material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 20, a kind of splendid attire silicon material are used, wherein: on cover 1 and make by carbofrax material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 21, a kind of splendid attire silicon material are used, wherein: on cover 1 and make by boron nitride material.All the other are with any one embodiment among the embodiment 1-embodiment 15.
The combined type copple that embodiment 22, a kind of splendid attire silicon material are used, wherein: between the lower wall 4 and base plate 5 of following crucible 2, the connection between the lower wall 4 is the integral type seamless link.All the other are with embodiment 1.
The combined type copple that embodiment 23, a kind of splendid attire silicon material are used, wherein: on the connection of covering between 1 the upper side wall 3 be the integral type seamless link.All the other are with embodiment 1.
The combined type copple that embodiment 24, a kind of splendid attire silicon material are used, wherein: on cover and adopt the screw screw fixed form that cooperatively interacts to connect between 1 the upper side wall 3.All the other are with embodiment 1.
The combined type copple that embodiment 25, a kind of splendid attire silicon material are used, wherein: on cover and adopt the chase mortise fixed form that cooperatively interacts to connect between 1 the upper side wall 3.All the other are with embodiment 1.
The combined type copple that embodiment 26, a kind of splendid attire silicon material are used, wherein: caking agent 9 is a silicon sol and the mixing of silicon nitride.All the other are with embodiment 3.
Explain principle of work of the present invention in conjunction with the embodiments: basic ideas of the present invention are because the restriction of silicon material 7 geomeries of adorning, common crucible 6 packing factors are little, after the initial silicon material of being adorned melts in common crucible 6,8 declines of silicon liquid, common crucible 6 has nearly half space to be available on silicon liquid 8 surfaces, common crucible 6 packing factors are little, and common crucible 6 utilization ratios are low; And high quartz crucible is because the restriction of existing technology of preparing, and qualification rate is low, the preparation cost height.So the present invention is at existing crucible, be that crucible 2 tops down of the present invention stack a upward cover 1 that is surrounded into certain volume by upper side wall 3, realize loading more silicon material 7, after 7 fusings of silicon material, silicon material 7 becomes silicon liquid 8, silicon liquid 8 is reduced to down below the crucible 2 oral area planes, being provided with of above cover 1 realized having loaded more silicon material.

Claims (11)

1. the combined type copple that splendid attire silicon material is used is characterized in that: comprise cover (1), following crucible
(2), last cover (1) overlay down crucible (2) directly over, wherein last cover (1) is centered on by upper side wall (3) and forms, following crucible (2) comprises lower wall (4) and base plate (5), lower wall (4) around be distributed in base plate around, upper side wall (3), lower wall (4) surround the cavity that can place material jointly with base plate (5).
2. the combined type copple that a kind of splendid attire silicon material as claimed in claim 1 is used is characterized in that: go up between cover (1) and the following crucible (2) and smear caking agent (9).
3. the combined type copple that a kind of splendid attire silicon material as claimed in claim 1 is used is characterized in that: the aspect ratio scope that goes up cover (1) and following crucible (2) is at 0.01:1-1:1.
4. the combined type copple of using as claim 1 or 2 or 3 described a kind of splendid attire silicon material, it is characterized in that: following crucible (2) is made by quartz material.
5. the combined type copple of using as claim 1 or 2 or 3 described a kind of splendid attire silicon material is characterized in that: go up cover (1) and made by quartz material.
6. the combined type copple of using as claim 1 or 2 or 3 described a kind of splendid attire silicon material is characterized in that: go up cover (1) and made by graphite, silicon nitride, silicon carbide or boron nitride material.
7. the combined type copple of using as the described a kind of splendid attire silicon material of claim 1, it is characterized in that: between the lower wall (4) and base plate (5) of following crucible (2), the connection between the lower wall (4) is the integral type seamless link.
8. the combined type copple that a kind of splendid attire silicon material as claimed in claim 1 is used is characterized in that: the connection of going up between the upper side wall (3) that covers (1) is the integral type seamless link.
9. the combined type copple that a kind of splendid attire silicon material as claimed in claim 1 is used is characterized in that: go up and adopt the screw screw fixed form that cooperatively interacts to connect between the upper side wall (3) that covers (1).
10. the combined type copple that a kind of splendid attire silicon material as claimed in claim 1 is used is characterized in that: go up and adopt the chase mortise fixed form that cooperatively interacts to connect between the upper side wall (3) that covers (1).
11. the combined type copple that a kind of splendid attire silicon material as claimed in claim 2 is used is characterized in that: caking agent (9) can mixing for silicon sol and silicon nitride.
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CN103060923A (en) * 2013-01-18 2013-04-24 奕雪春 Structure for regulating volume of quartz crucible by using tungsten or molybdenum cylinder
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CN103717790A (en) * 2011-07-26 2014-04-09 株式会社尼康 Crucible for manufacturing compound crystal, apparatus for manufacturing compound crystal, and method for manufacturing compound crystal using crucible
CN103060922A (en) * 2013-01-18 2013-04-24 奕雪春 Volume-adjustable combined type crucible
CN103060923A (en) * 2013-01-18 2013-04-24 奕雪春 Structure for regulating volume of quartz crucible by using tungsten or molybdenum cylinder
CN103060923B (en) * 2013-01-18 2015-09-30 宁波北纬光通信科技有限公司 A kind of tungsten cylinder is to the volume regulation structure of quartz crucible
CN103160936A (en) * 2013-02-26 2013-06-19 昱成光能股份有限公司 Manufacturing method of crucible protecting frame
CN103114268A (en) * 2013-03-15 2013-05-22 福州赛瑞特新材料技术开发有限公司 Bonded type boron nitride-graphite combined evaporation boat and preparation method thereof
CN103114268B (en) * 2013-03-15 2015-08-12 福州赛瑞特新材料技术开发有限公司 A kind of adhered Boron nitride-graphite composite evaporation boat and preparation method thereof
CN104109903A (en) * 2014-07-28 2014-10-22 常熟华融太阳能新型材料有限公司 Recyclable quartz ceramic crucible for polycrystalline silicon ingot and preparation method of quartz ceramic crucible

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Application publication date: 20110525