CN201975387U - 一种小本体高压半导体整流器 - Google Patents

一种小本体高压半导体整流器 Download PDF

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CN201975387U
CN201975387U CN2010205638779U CN201020563877U CN201975387U CN 201975387 U CN201975387 U CN 201975387U CN 2010205638779 U CN2010205638779 U CN 2010205638779U CN 201020563877 U CN201020563877 U CN 201020563877U CN 201975387 U CN201975387 U CN 201975387U
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high voltage
voltage semiconductor
lead
semiconductor rectifier
small
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殷俊
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Chongqing Pingwei Enterprise Co Ltd
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Chongqing Pingwei Enterprise Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

本实用新型公开了一种小本体高压半导体整流器，包括硅芯片、两铜引线、硅橡胶、环氧塑封体，硅芯片位于两铜引线钉头之间，通过焊料与铜引线焊接，硅橡胶将两铜引线钉头间的硅芯片以及焊料层包裹在其中，而整个高压半导体整流器除两铜引线端头外，其余部分均包裹在环氧树脂注塑成的塑封体内。本实用新型的有益效果是：在同类产品铜引线单层钉头结构的基础上，将其改变为三层钉头结构，这样就可使产品硅橡胶的包裹效果更好，阻碍硅橡胶在引线钉头下流到引线上，同时三层结构可使引线与环氧树脂的结合度增强。因此本实用新型具有提高硅橡胶及环氧树脂的包裹效果，从而提高产品稳定性、机械性能及气密性的特点。

Description

一种小本体高压半导体整流器
技术领域
本实用新型涉及一种半导体器件，特别涉及一种小本体高压半导体整流器。
背景技术
普通型高压半导体整流二极管，它是一种半导体整流器件，广泛应用于各种电源、充电器、汽车消费电子、以及电脑显示器等设施中。随着产品线路板小型化而使产品小型化的发展趋势，小本体的高压整流二极管需求量将会日益增大，但鉴于目前面临一个让电子业界均头痛的事情——就是针对该类小本体产品的品质稳定性较差，原因是：该产品经长时间放置后由于气密性不良而致水汽进入内部结构，使产品容易出现反向击穿电压不稳定的现象。因此提高此类产品气密性就成为一个当前需要马上解决的课题。
实用新型内容
为了提高小本体高压半导体整流器的稳定性、气密性等问题，本实用新型公开了一种小本体高压半导体整流器，包括硅芯片、两铜引线、硅橡胶、环氧塑封体。硅芯片位于两铜引线钉头之间，通过焊料与铜引线焊接，硅橡胶将两铜引线钉头间的硅芯片以及焊料层包裹在其中，而整个高压半导体整流器除两铜引线端头外，其余部分均包裹在环氧树脂注塑成的塑封体内。
其中，所述铜引线端面由一层结构变为三层结构。
本实用新型的有益效果是：在同类产品铜引线单层钉头结构的基础上，将其改变为三层钉头结构，这样就可使产品硅橡胶的包裹效果更好，阻碍硅橡胶在引线钉头下流到引线上，同时三层结构可使引线与环氧树脂的结合度增强。因此本实用新型具有提高硅橡胶及环氧树脂的包裹效果，从而提高产品稳定性、机械性能及气密性的特点。
附图说明
图1为本实用新型剖开环氧塑封体的结构示意图。
具体实施方式
为了使本实用新型更容易被理解，下面结合附图和具体实施方式对本实用新型做更详细说明。
参阅图1，一种小本体高压半导体整流器，包括硅芯片5、两铜引线4、环氧塑封体1，硅芯片5位于两铜引线钉头401之间，通过焊料与铜引线4焊接，硅橡胶3将两铜引线钉头401间的硅芯片5以及焊料层2包裹在其中，而整个小本体高压半导体整流器除铜引线4端部外，其余部分均包裹在环氧树脂注塑成的塑封体1内。铜引线4的端头为其与硅芯片5焊接的端面对应的另一端。
其中，所述两铜引线钉头401为三层结构。

Claims (2)

1.一种小本体高压半导体整流器，其特征在于：包括硅芯片、两铜引线、硅橡胶、环氧塑封体，硅芯片位于两铜引线钉头之间，通过焊料与铜引线焊接，硅橡胶将两铜引线钉头间的硅芯片以及焊料层包裹在其中，而整个高压半导体整流器除两铜引线端头外，其余部分均包裹在环氧树脂注塑成的塑封体内。
2.根据权利要求1所述一种小本体高压半导体整流器，其特征在于：所述铜引线钉头为三层结构。
CN2010205638779U 2010-10-18 2010-10-18 一种小本体高压半导体整流器 Expired - Lifetime CN201975387U (zh)

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