CN201946631U - LED (light emitting diode) lamp panel adopting sputtered circuit - Google Patents
LED (light emitting diode) lamp panel adopting sputtered circuit Download PDFInfo
- Publication number
- CN201946631U CN201946631U CN2011200098355U CN201120009835U CN201946631U CN 201946631 U CN201946631 U CN 201946631U CN 2011200098355 U CN2011200098355 U CN 2011200098355U CN 201120009835 U CN201120009835 U CN 201120009835U CN 201946631 U CN201946631 U CN 201946631U
- Authority
- CN
- China
- Prior art keywords
- led wafer
- led
- polyphenylene sulfide
- radiating substrate
- lead wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Abstract
The utility model discloses an LED (light emitting diode) lamp panel adopting a sputtered circuit. A copper lead wire placing groove is arranged on the surface of a heat radiating substrate made of polyphenylene sulfide; a sputtered copper lead wire layer is arranged in the copper lead wire placing groove; an LED wafer placing groove is arranged on the surface of the heat radiating substrate made of the polyphenylene sulfide; an LED wafer is fixed on the LED wafer placing groove through a wafer fixing silver adhesive; the LED wafer is connected with a sputtered copper lead wire through a metal lead wire; a silica gel packaging layer used for packaging the LED wafer is arranged at the outer part of the LED wafer; and a covering layer is arranged on the upper surface of the heat radiating substrate made of the polyphenylene sulfide and the sputtered copper lead wire layer. The LED lamp panel has reasonable structure; novel heat conducting material can be utilized to replace the traditional metal material (such as aluminum and the like) so as to reduce the weight of the product; and the sputtered copper/silver circuit of a sputtering machine for use in the production of CDs can be utilized to replace the traditional etching process; therefore, the yield is improved, the environment is protected, and the pollution is reduced.
Description
Technical field
The utility model relates to a kind of LED lamp plate.
Background technology
Existing LED lamp plate generally adopts etch process, and inefficiency, pollution are greatly; The traditional product heat dispersion is undesirable, and substrate adopts metal material, has defectives such as weight is big.
The utility model content
It is a kind of rational in infrastructure that the purpose of this utility model is to provide, the LED lamp plate of the employing sputter circuit that technology is easy, minimizing is polluted.
Technical solution of the present utility model is:
A kind of LED lamp plate that adopts the sputter circuit, it is characterized in that: comprise the polyphenylene sulfide heat-radiating substrate, on polyphenylene sulfide heat-radiating substrate surface the copper conductor standing groove is set, the sputter copper conductor layer is set in the copper conductor standing groove, on polyphenylene sulfide heat-radiating substrate surface LED wafer standing groove is set, the LED wafer is fixed in the LED wafer standing groove by solid brilliant elargol, the LED wafer is connected with the sputter copper conductor by plain conductor, silica gel encapsulated layer with the LED wafer package is set outside the LED wafer, cover layer is set at polyphenylene sulfide heat-radiating substrate and sputter copper conductor layer upper surface.
Polyphenylene sulfide heat-radiating substrate bottom is wavy, and the thickness of polyphenylene sulfide heat-radiating substrate is 1.2 ~ 1.8mm.
The degree of depth of copper conductor standing groove is 0.1mm, and the degree of depth of LED wafer standing groove is 0.2mm, and tectal thickness is 0.3mm.
Cover layer is a makrolon material.
The utility model product structure is reasonable, utilizes new Heat Conduction Material, can replace traditional metal materials (aluminium etc.) and reduce product weight.Utilize CD-RW discsCD-RW give birth to Productivity with sputter machine Splash Plating Copper/Silver circuit, can replace traditional etch process, promote production capacity, the protection environment reduces pollution.Utilize COB LED technology, directly with the LED wafer package on the LED lamp substrate, more help heat radiation, remove traditional LED wafer package operation from, and LED light-emitting particles paster operation, reduce processing technology, reduce production costs.
Description of drawings
The utility model is described in further detail below in conjunction with drawings and Examples.
Fig. 1 is the structural representation of an embodiment of the utility model.
Fig. 2 is a polyphenylene sulfide heat-radiating substrate front view.
Fig. 3 is the cover layer front view.
Fig. 4, Fig. 5 are the different intermediateness figure of process of product development.
Embodiment
A kind of LED lamp plate of sputter circuit that adopts comprises polyphenylene sulfide heat-radiating substrate 1, on polyphenylene sulfide heat-radiating substrate surface copper conductor standing groove 2 is set, sputter copper conductor layer 3 is set in the copper conductor standing groove, on polyphenylene sulfide heat-radiating substrate surface LED wafer standing groove 4 is set, LED wafer 5 is fixed in the LED wafer standing groove 4 by solid brilliant elargol 6, the LED wafer is connected with the sputter copper conductor by plain conductor 7, silica gel encapsulated layer 8 with the LED wafer package is set outside the LED wafer, cover layer 9 is set at polyphenylene sulfide heat-radiating substrate and sputter copper conductor layer upper surface.
Polyphenylene sulfide heat-radiating substrate bottom is wavy, and the thickness of polyphenylene sulfide heat-radiating substrate is 1.2 ~ 1.8mm.The degree of depth of copper conductor standing groove is 0.1mm, and the degree of depth of LED wafer standing groove is 0.2mm, and tectal thickness is 0.3mm.Cover layer is a makrolon material.
Claims (3)
1. LED lamp plate that adopts the sputter circuit, it is characterized in that: comprise the polyphenylene sulfide heat-radiating substrate, on polyphenylene sulfide heat-radiating substrate surface the copper conductor standing groove is set, the sputter copper conductor layer is set in the copper conductor standing groove, on polyphenylene sulfide heat-radiating substrate surface LED wafer standing groove is set, the LED wafer is fixed in the LED wafer standing groove by solid brilliant elargol, the LED wafer is connected with the sputter copper conductor by plain conductor, silica gel encapsulated layer with the LED wafer package is set outside the LED wafer, cover layer is set at polyphenylene sulfide heat-radiating substrate and sputter copper conductor layer upper surface.
2. the LED lamp plate of employing sputter circuit according to claim 1 is characterized in that: polyphenylene sulfide heat-radiating substrate bottom is wavy, and the thickness of polyphenylene sulfide heat-radiating substrate is 1.2 ~ 1.8mm.
3. the LED lamp plate of employing sputter circuit according to claim 1 and 2 is characterized in that: the degree of depth of copper conductor standing groove is 0.1mm, and the degree of depth of LED wafer standing groove is 0.2mm, and tectal thickness is 0.3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200098355U CN201946631U (en) | 2011-01-13 | 2011-01-13 | LED (light emitting diode) lamp panel adopting sputtered circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200098355U CN201946631U (en) | 2011-01-13 | 2011-01-13 | LED (light emitting diode) lamp panel adopting sputtered circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201946631U true CN201946631U (en) | 2011-08-24 |
Family
ID=44473967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200098355U Expired - Fee Related CN201946631U (en) | 2011-01-13 | 2011-01-13 | LED (light emitting diode) lamp panel adopting sputtered circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201946631U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157664A (en) * | 2011-01-13 | 2011-08-17 | 江苏永兴多媒体有限公司 | LED (light-emitting diode) lamp panel adopting sputtering circuit and production method thereof |
-
2011
- 2011-01-13 CN CN2011200098355U patent/CN201946631U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157664A (en) * | 2011-01-13 | 2011-08-17 | 江苏永兴多媒体有限公司 | LED (light-emitting diode) lamp panel adopting sputtering circuit and production method thereof |
| CN102157664B (en) * | 2011-01-13 | 2013-03-20 | 江苏永兴多媒体有限公司 | LED (light-emitting diode) lamp panel adopting sputtering circuit and production method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110824 Termination date: 20140113 |