CN201868419U - Lead frame for manufacture of semiconductor discrete devices - Google Patents
Lead frame for manufacture of semiconductor discrete devices Download PDFInfo
- Publication number
- CN201868419U CN201868419U CN2010206084775U CN201020608477U CN201868419U CN 201868419 U CN201868419 U CN 201868419U CN 2010206084775 U CN2010206084775 U CN 2010206084775U CN 201020608477 U CN201020608477 U CN 201020608477U CN 201868419 U CN201868419 U CN 201868419U
- Authority
- CN
- China
- Prior art keywords
- groove
- lead frame
- tin
- lead
- slide glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model discloses a lead frame for the manufacture of semiconductor discrete devices. The lead frame comprises a foil carrying part (1) and a plurality of pins (2), wherein grooves (4) are formed on the foil carrying part (1), and tin-lead foils (5) are embedded in the grooves (4). Due to the adoption of the lead frame, the integral tin dispensing process is eliminated, the tin-lead foils can fully spread and fill the grooves after being molten, the distribution of the tin-lead foils is uniform, the yield of finished products is improved and the production efficiency of the semiconductor discrete devices is improved.
Description
Technical field:
The utility model relates to the semiconductor element field, specifically is a kind of lead frame that is used to make semi-conductor discrete device.
Background technology:
Lead frame is the basic element of character of making semi-conductor discrete device, is TO-3P as the industry universal models, TO-220, TO-251, the lead frame of TO-126.As shown in Figure 1, the lead frame of prior art comprises slide glass portion 1 ' and a plurality of pin twos ', described lead frame is an integral body, the lead frame of part model also includes heat radiation fixed part 3 ' (as: TO-220).The base material of lead frame is copper alloy, aluminium alloy or ferroalloy.In the product use, need in slide glass portion, chip be installed, generally in slide glass portion, add the plumbous molten material of liquid tin, industry is called a process of tin, in order to slide glass portion and chip attach.But in said process, the plumbous molten material of tin spreads in slide glass portion and is difficult to fully and covers load the needed area of chip, especially when having oxidation on metal surface thing or organic contaminant in the slide glass portion, the plumbous molten material of just easier generation tin is sprawled not open (can cause rosin joint) and is sprawled the situation of inhomogeneous (can cause the chip attach out-of-flatness), have influence on the strong bonded of lead frame and chip chamber, and finally influence the production efficiency and the qualification rate of discrete device.
The utility model content:
The technical problems to be solved in the utility model is that a kind of lead frame that can make lead frame and more firm being used to of chips incorporate make semi-conductor discrete device is provided.
Technical solution of the present utility model is, the lead frame that is used to make semi-conductor discrete device of following structure is provided, and comprises slide glass portion and a plurality of pin, and described slide glass portion is provided with groove, is embedded in tin lead foil sheet at described groove.
Adopt after the above structure compared with prior art, the utlity model has following advantage: adopt the utility model structure, in use saved the whole technology of some tin, tin lead foil sheet in its slide glass portion is heated and can melts in the process that chip is installed, and be evenly distributed in the groove, again chip is placed the groove top this moment, slide glass portion carries out good binding with regard to energy and chip, whole groove can be sprawled and be full of to the plumbous molten material of tin, and be evenly distributed, promote the qualification rate of finished product, improved the production efficiency of semi-conductor discrete device simultaneously.
As improvement, described tin lead foil sheet is identical with the groove size, like this, when chip is installed, both has been enough to and can also can overflowed from groove securely in conjunction with chip after the fusing of tin lead foil sheet.
As improvement, the bottom surface of described groove is provided with netted groove, because tin lead foil sheet generally embeds in the groove by Sheet Metal Forming Technology, after the bottom surface increases netted groove, can make tin lead foil sheet partly be squeezed into netted groove, make the two more strong bonded, prevent that tin lead foil sheet from coming off; In addition in the process that chip is installed, after the heating of the tin lead foil sheet in the groove, the plumbous molten material of tin can be covered with groove fast, equably by netted groove, and after connecting chip, the molten material of tin after the sclerosis embeds netted groove, and it is more firm to make that slide glass portion is connected with chip.
As improvement, the grid of described netted groove is a parallelogram, and the easier processing of the grid of this shape also makes things convenient for the plumbous molten material rapid diffusion of tin and is covered with whole groove.
As improvement, the upper surface of the tin lead foil sheet in the described embedding groove is higher than the surface of slide glass portion, like this, because when punching press, the strength that tin lead foil sheet is embedded the used punching press of groove is unsuitable excessive, otherwise can damage the back side of slide glass portion, this moment, the upper surface of tin lead foil sheet was general all a little more than the surface of slide glass portion.
As improvement, also be provided with the ring-type groove that is positioned at the groove outside in the described slide glass portion, like this, outside the groove that embeds tin lead foil sheet, be provided with the ring-type groove, can in punching press ring-type groove, produce extruding to groove and tin lead foil sheet, make groove and tin lead foil sheet indent, tin lead foil sheet is embedded in the groove firmly.
As improvement, described groove is square, and the ring-type groove also is square, because chip generally is square, after the plumbous molten material of tin is covered with square groove, can make slide glass portion and chips incorporate more full.
Description of drawings:
Fig. 1 is the structural representation of lead frame that is used to make semi-conductor discrete device of prior art.
Fig. 2 is the structural representation (being unkitted tin lead foil sheet) that is used to make the power lead framework of semi-conductor discrete device of the present utility model.
Fig. 3 is an A-A profile among Fig. 2.
Fig. 4 is the structural representation (after loading onto tin lead foil sheet) that is used to make the power lead framework of semi-conductor discrete device of the present utility model.
Fig. 5 is an A-A profile among Fig. 4.
Fig. 6 is the process chart of the manufacture method of the lead frame that is used to make semi-conductor discrete device of the present utility model.
Fig. 7 is the enlarged drawing of B among Fig. 6.
Fig. 8 is the location diagram of drift, tin lead material thin slice and the lead frame body of punching press tin lead foil sheet.
Shown in the figure: 1 ', slide glass portion, 2 ', pin, 3 ', the heat radiation fixed part, 1, slide glass portion, 2, pin, 3, heat radiation fixed part, 4, groove, 5, tin lead foil sheet, 6, netted groove, 7, ring-type groove, 8, drift, 9, tin lead material thin slice, 10, the lead frame body.
Embodiment:
The utility model is described in further detail below in conjunction with the drawings and specific embodiments:
As Fig. 2, shown in Figure 3, the lead frame that is used to make semi-conductor discrete device of the present utility model comprises slide glass portion 1, a plurality of pin two and heat radiation fixed part 3.Above-mentioned for based on the prior art of TO-220 model, some models are the fixed parts 3 that do not dispel the heat in addition.
Described slide glass portion 1 is provided with groove 4, and described groove 4 is embedded in and the identical tin lead foil sheets 5 of groove 4 sizes, and described depth of groove is 0.05mm, the thickness 0.1mm of tin lead foil sheet 5.
The bottom surface of described groove 4 is provided with netted groove 6, and the cross section of described netted groove 6 is a V-type, has not only strengthened the adhesion of tin lead foil sheet 5 and groove 4, when chip is installed, after tin lead foil sheet 5 melted by heat, more can enter the netted groove 6 of V-type smoothly, also be convenient to diffuse to whole groove.
Also be provided with the ring-type groove 7 that is positioned at groove 4 outsides in the described slide glass portion 1, described ring-type groove 7 surrounds whole groove 4.
Described groove 4 is a square groove, and ring-type groove 7 also is square.
The grid of described netted groove 6 is a square, and square is a kind of of parallelogram.
The manufacture method that is used to make the lead frame of semi-conductor discrete device of the present utility model, described lead frame comprises slide glass portion and a plurality of pin, described manufacture method may further comprise the steps:
(a) adopt Sheet Metal Forming Technology, in slide glass portion, stamp out a groove 4, in the course of processing, the general row of putting in order that adopts processes, be that a plurality of lead frame bodies are side-by-side, during punching press lead frame fixed, adopt then with lead frame one to one drift slide glass portion is carried out punching press; Described groove is a square groove;
(b) with tin lead material sheet covers on groove 4, directly over groove 4,, tin lead foil sheet identical with groove size 5 and tin lead material thin slice be separated and embed in the groove 4 punching press of tin lead material thin slice; Described tin lead material thin slice is the raw material of tin lead foil sheet, because the whole discharging of a plurality of lead frame bodies is put, certain interval is arranged each other, can be above the groove of whole row lead frame frame body with strip tin lead material sheet covers, then tin lead material thin slice is carried out punching press, tin lead foil sheet identical with groove size 5 and tin lead material thin slice are separated and embed in the groove 4; In order to make full use of tin lead material thin slice, after a punching press is finished, the lead frame that processes can be taken out, put into a unprocessed row lead frame frame then, afterwards, regulate the position of tin lead material thin slice, make the part that is not stamped cover the groove top, like this, fully effectively utilized tin lead material thin slice; The edge of the lower surface of the drift 8 that punching press tin lead foil sheet 5 is used is provided with lower convex ring, and in the process of punching press, effectively the periphery of punching press tin lead foil sheet sink its periphery and firmly embeds in the groove.
Step (a) can increase one procedure afterwards, stamps out netted groove 6 in the bottom surface of groove, and the grid of described netted groove 6 is a parallelogram.
Step (b) can increase one procedure afterwards, and in slide glass portion, the outside that embeds the groove of tin lead foil sheet stamps out the ring-type groove; When punching press ring-type groove, groove and tin lead foil sheet are produced extruding, make groove and tin lead foil sheet indent, tin lead foil sheet is embedded in the groove firmly.
Below only be described, but can not be interpreted as it is restriction claim with regard to the utility model preferred embodiment.The utility model not only is confined to above embodiment, and its concrete structure and step allow variation, and in a word, all various variations of being done in the protection range of the utility model independent claims are all in protection range of the present utility model.
Claims (7)
1. a lead frame that is used to make semi-conductor discrete device comprises slide glass portion (1) and a plurality of pin (2), and it is characterized in that: described slide glass portion (1) is provided with groove (4), is embedded in tin lead foil sheet (5) at described groove (4).
2. the lead frame that is used to make semi-conductor discrete device according to claim 1 is characterized in that: described tin lead foil sheet (5) is identical with groove (4) size.
3. the lead frame that is used to make semi-conductor discrete device according to claim 1 is characterized in that: the bottom surface of described groove (4) is provided with netted groove (6).
4. the lead frame that is used to make semi-conductor discrete device according to claim 3 is characterized in that: the grid of described netted groove (6) is a parallelogram.
5. the lead frame that is used to make semi-conductor discrete device according to claim 1 is characterized in that: the upper surface of the tin lead foil sheet (5) in the described embedding groove and the surface of slide glass portion (1) are positioned on the same horizontal plane.
6. the lead frame that is used to make semi-conductor discrete device according to claim 1 is characterized in that: also be provided with the ring-type groove (7) that is positioned at groove (4) outside in the described slide glass portion (1).
7. the lead frame that is used to make semi-conductor discrete device according to claim 6 is characterized in that: described groove (4) is for square, and described ring-type groove (7) also is square.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206084775U CN201868419U (en) | 2010-11-08 | 2010-11-08 | Lead frame for manufacture of semiconductor discrete devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206084775U CN201868419U (en) | 2010-11-08 | 2010-11-08 | Lead frame for manufacture of semiconductor discrete devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201868419U true CN201868419U (en) | 2011-06-15 |
Family
ID=44139566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206084775U Expired - Lifetime CN201868419U (en) | 2010-11-08 | 2010-11-08 | Lead frame for manufacture of semiconductor discrete devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201868419U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064151A (en) * | 2010-11-08 | 2011-05-18 | 宁波康强电子股份有限公司 | Lead frame for manufacturing discrete semiconductor and manufacturing method thereof |
| CN103617980A (en) * | 2013-11-08 | 2014-03-05 | 张轩 | Plastic package lead frame with sawtooth indentations |
| CN103617984A (en) * | 2013-11-08 | 2014-03-05 | 张轩 | Plastic package lead frame |
| CN110379791A (en) * | 2019-07-10 | 2019-10-25 | 苏州浪潮智能科技有限公司 | A kind of electronic component and its pin |
-
2010
- 2010-11-08 CN CN2010206084775U patent/CN201868419U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064151A (en) * | 2010-11-08 | 2011-05-18 | 宁波康强电子股份有限公司 | Lead frame for manufacturing discrete semiconductor and manufacturing method thereof |
| CN102064151B (en) * | 2010-11-08 | 2014-01-22 | 宁波康强电子股份有限公司 | Lead frame for manufacturing discrete semiconductor and manufacturing method thereof |
| CN103617980A (en) * | 2013-11-08 | 2014-03-05 | 张轩 | Plastic package lead frame with sawtooth indentations |
| CN103617984A (en) * | 2013-11-08 | 2014-03-05 | 张轩 | Plastic package lead frame |
| CN110379791A (en) * | 2019-07-10 | 2019-10-25 | 苏州浪潮智能科技有限公司 | A kind of electronic component and its pin |
| CN110379791B (en) * | 2019-07-10 | 2021-08-10 | 苏州浪潮智能科技有限公司 | Electronic part and pin thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110615 |
|
| CX01 | Expiry of patent term |