CN100447954C - Method for manufacturing metal balls of sphere grid array in semiconductor module - Google Patents
Method for manufacturing metal balls of sphere grid array in semiconductor module Download PDFInfo
- Publication number
- CN100447954C CN100447954C CNB2005101186028A CN200510118602A CN100447954C CN 100447954 C CN100447954 C CN 100447954C CN B2005101186028 A CNB2005101186028 A CN B2005101186028A CN 200510118602 A CN200510118602 A CN 200510118602A CN 100447954 C CN100447954 C CN 100447954C
- Authority
- CN
- China
- Prior art keywords
- semiconductor subassembly
- tin cream
- grid array
- tool
- metal balls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
The method includes following steps: providing a semiconductor subassembly with multiple electrodes; providing a fixture placed on the semiconductor subassembly; there are through holes on the fixture corresponding to the said multiple electrodes; using crazing mode to coat tin cream on the fixture, and make tin cream fall into through holes; using drawknife fixture to scrape off tin cream come out; semiconductor subassembly passes through back soldering furnace so as to let tin cream melt; after cooling, metal balls of ball grid array are formed on the semiconductor subassembly.
Description
Technical field
The present invention is a kind of ball grid array method for manufacturing metal balls of semiconductor subassembly, is meant especially a kind ofly in the wire mark mode tin cream to be coated on the semiconductor subassembly, makes the height of Metal Ball can control system effectively, improving the quality of making, and make more convenient.
Background technology
The packaged type of existing semiconductor subassembly, normally cloth is planted Metal Ball on semiconductor subassembly, and as the interface that is connected with external module or circuit board, existing method for manufacturing metal balls is that the tin cream point is located on the semiconductor subassembly, through cooling off after the fusion of reflow stove, promptly form Metal Ball again.
But the manufacture method of this kind Metal Ball is to be coated with up one by one when being coated with tin cream, and is more time-consuming on the processing procedure, and the tin cream amount often has uneven existing picture, so that the size of Metal Ball often differs, and has influence on the quality of product.
In view of this, the inventor be this in the spirit of keeping on improving, innovate breakthrough, be devoted to the encapsulation research and development of semiconductor subassembly, and develop the semi-conductive ball bar method for manufacturing metal balls of the present invention, make it make more convenient and improve its yield.
Summary of the invention
Main purpose of the present invention is to provide a kind of ball bar method for manufacturing metal balls of semiconductor subassembly, and it has makes effect easily, to reach the purpose that reduces production costs.
Another object of the present invention is to provide a kind of ball bar method for manufacturing metal balls of semiconductor subassembly, and it has the comparatively stable effect of quality bills of materials, improves the purpose of producing yield to reach.
The invention provides the semiconductor assembly, it is provided with a plurality of electrodes; Provide a tool on this semiconductor subassembly, this tool is positioned at these a plurality of electrode positions and is formed with open-work; In the wire mark mode tin cream is coated on this tool, tin cream is fallen in this open-work, and strike off the tin cream that exposes from the tool surface with scraper; Take out tool; Semiconductor subassembly through the reflow stove, is made the tin cream fusion, promptly on this semiconductor subassembly, form the ball grid array Metal Ball after the cooling.
Above-mentioned and other purpose, advantage and characteristic of the present invention are more understood in depth by the detailed description of following preferred embodiment and with reference to graphic.
Description of drawings
Fig. 1 is first schematic diagram of the ball grid array method for manufacturing metal balls of semiconductor subassembly of the present invention;
Fig. 2 is second schematic diagram of the ball grid array method for manufacturing metal balls of semiconductor subassembly of the present invention;
Fig. 3 is the 3rd schematic diagram of the ball grid array method for manufacturing metal balls of semiconductor subassembly of the present invention;
Fig. 4 is the 4th schematic diagram of the ball grid array method for manufacturing metal balls of semiconductor subassembly of the present invention;
Fig. 5 is the 5th schematic diagram of the ball grid array method for manufacturing metal balls of semiconductor subassembly of the present invention.
[primary clustering symbol description]
Figure number of the present invention
Semiconductor subassembly 10 electrodes 12
Tool 14 open-works 16
Tin cream 18 Metal Ball 20
Embodiment
See also Fig. 1 to Fig. 5, be the schematic diagram of the ball bar method for manufacturing metal balls of semiconductor subassembly of the present invention, it comprises the following steps:
Step 1, provide semiconductor assembly 10, it is provided with the electrode 12 of a plurality of arrays;
Step 2, provide a steel plate tool 14 on semiconductor subassembly 10, tool 14 is positioned at a plurality of electrodes 12 positions and is formed with open-work 16;
Step 3, tin cream 18 is coated on the tool 14, tin cream is fallen in the open-work 16 of tool 14, and strike off the tin cream 18 that exposes from tool 14 surfaces with scraper in the wire mark mode; And
Step 4, tool 14 is taken off.
Step 5, with semiconductor subassembly 10 through the reflow stoves, make the tin cream fusion, promptly on semiconductor subassembly 10, form ball grid array Metal Ball 20 after the cooling.
In this way, can efficiently once fill tin cream 18 in all holes 16, more convenient and quick on making, can effectively reduce production costs.Moreover.Can effectively control the amount of tin cream 18, make Metal Ball 20 form identical size.
The specific embodiment that is proposed in the detailed description of preferred embodiment is only in order to be easy to illustrate technology contents of the present invention, be not with narrow sense of the present invention be limited to embodiment, all many variations that situation is done enforcement according to spirit of the present invention and following claim all belongs to scope of the present invention.
Claims (3)
1. the ball grid array method for manufacturing metal balls of a semiconductor subassembly is characterized in that, comprises the following steps:
The semiconductor assembly is provided, and it is provided with a plurality of electrodes;
Provide a tool on this semiconductor subassembly, this tool is positioned at these a plurality of electrode positions and is formed with open-work;
In the wire mark mode tin cream is coated on this tool, tin cream is fallen in this open-work, and strike off the tin cream that exposes from the tool surface with scraper;
Take out tool;
Semiconductor subassembly through the reflow stove, is made the tin cream fusion, promptly on this semiconductor subassembly, form the ball grid array Metal Ball after the cooling.
2. the ball grid array method for manufacturing metal balls of semiconductor subassembly as claimed in claim 1 is characterized in that, a plurality of electrodes of described this semiconductor subassembly form array.
3. the ball grid array method for manufacturing metal balls of semiconductor subassembly as claimed in claim 1 is characterized in that, described tool is a steel plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101186028A CN100447954C (en) | 2005-10-31 | 2005-10-31 | Method for manufacturing metal balls of sphere grid array in semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101186028A CN100447954C (en) | 2005-10-31 | 2005-10-31 | Method for manufacturing metal balls of sphere grid array in semiconductor module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1959935A CN1959935A (en) | 2007-05-09 |
| CN100447954C true CN100447954C (en) | 2008-12-31 |
Family
ID=38071540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101186028A Expired - Fee Related CN100447954C (en) | 2005-10-31 | 2005-10-31 | Method for manufacturing metal balls of sphere grid array in semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100447954C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI649817B (en) * | 2018-02-09 | 2019-02-01 | 竑騰科技股份有限公司 | Scraper box |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855041B (en) * | 2012-12-06 | 2017-12-22 | 北京普源精电科技有限公司 | A kind of chip ball-planting device and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1215921A (en) * | 1997-10-28 | 1999-05-05 | 日本电气株式会社 | Mold-BGA-type semiconductor device and method for making the same |
| US6544815B2 (en) * | 2000-06-21 | 2003-04-08 | Harlan R. Isaak | Panel stacking of BGA devices to form three-dimensional modules |
| US6774742B1 (en) * | 2002-05-23 | 2004-08-10 | Applied Microcircuits Corporation | System and method for interfacing a coaxial connector to a coplanar waveguide substrate |
-
2005
- 2005-10-31 CN CNB2005101186028A patent/CN100447954C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1215921A (en) * | 1997-10-28 | 1999-05-05 | 日本电气株式会社 | Mold-BGA-type semiconductor device and method for making the same |
| US6544815B2 (en) * | 2000-06-21 | 2003-04-08 | Harlan R. Isaak | Panel stacking of BGA devices to form three-dimensional modules |
| US6774742B1 (en) * | 2002-05-23 | 2004-08-10 | Applied Microcircuits Corporation | System and method for interfacing a coaxial connector to a coplanar waveguide substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI649817B (en) * | 2018-02-09 | 2019-02-01 | 竑騰科技股份有限公司 | Scraper box |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1959935A (en) | 2007-05-09 |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081231 Termination date: 20151031 |
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| EXPY | Termination of patent right or utility model |