CN201713597U - Crystal growing heat preservation device - Google Patents
Crystal growing heat preservation device Download PDFInfo
- Publication number
- CN201713597U CN201713597U CN2010201987554U CN201020198755U CN201713597U CN 201713597 U CN201713597 U CN 201713597U CN 2010201987554 U CN2010201987554 U CN 2010201987554U CN 201020198755 U CN201020198755 U CN 201020198755U CN 201713597 U CN201713597 U CN 201713597U
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- zirconium
- tube
- attemperator
- crystal growth
- dish
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Abstract
The utility model discloses a crystal growing heat preservation device comprising a heat preservation part, a supporting part, a zirconium shielding layer and an observation hole, wherein the heat preservation device comprises a quartz tube adhered with a zirconium felt and a zirconium tube; a crucible can be placed in the zirconium tube; a zircon sand layer is arranged between the quartz tube and the zirconium tube; the supporting part supports the heat preservation device and comprises a support zirconium tube and a zirconium tray on the support zirconium tube; the zirconium shielding layer is positioned above the heat preservation device; and the observation hole is communicated with the heat preservation part. The device has better thermal insulation property and stable temperature field, and is suitable for large-size crystal growing.
Description
Technical field
The utility model relates to a kind of attemperator of crystal growth, refers in particular to a kind of attemperator of Nd:YAG crystal growth.
Background technology
The Nd:YAG crystal is the core parts of solid statelaser, the quality of Nd:YAG crystalline optical homogeneity decision solid statelaser quality.In order to obtain the good crystal of optical homogeneity, the one, increase the size of crucible, domestic general crucible size is
The size of maximum crucible is
The size of external maximum crucible is
The 2nd, reduce the crystallization rate,
Can only grow 2 inches crystal of crucible, its crystallization rate is 40%,
Can only grow 3 inches crystal of crucible, its crystallization rate is 26%,
The crystal of 4 inches of crucible growths, its crystallization rate is 18%, domestic crystallization rate is generally 26%～40%.But the growth of major diameter crystal blank is very harsh to the condition of each side, the one, and very strong to the dependency of equipment, require intermediate frequency power supply, the rotary pulling of single crystal growing furnace and the steady running of temperature controller energy have proposed very high requirement to control accuracy; The 2nd, must there be a cover to be fit to the attemperator of major diameter crystal growth; The 3rd, the production technique that adapts with it be arranged.This cover attemperator is determining growth major diameter crystalline temperature field, comprising the radial gradient and the axial gradient of space and solution; Determining growth major diameter crystalline success ratio and quality, if attemperator is off size suitable, the crystal of being grown is easy to cracking, is difficult to grow large-sized crystal.
The utility model content
At the defective that exists in the prior art, it is a kind of that the purpose of this utility model is to provide, and is fit to the large-size crystals growth, and crystal is not easy cracking, success ratio height, the measured crystal growth attemperator of matter.
For reaching above purpose, the technical scheme that the utility model is taked is: a kind of attemperator of crystal growth, the attemperator of described crystal growth comprises, one insulating sections, described attemperator comprises quartz tube and the zirconium tube that is attached with the zirconium felt, can place crucible in the described zirconium tube, and be provided with the zircon sand layer between described quartz tube and the zirconium tube; One supports partly, and described support section supports attemperator, and described support section comprises the zirconium pallet that supports on zirconium tube and the support zirconium tube; One zirconium screen layer, described zirconium screen layer are positioned at the attemperator top; One vision slit, described vision slit is connected with insulating sections.
On the basis of technique scheme, the thickness of described quartz tube is 10 millimeters, and diameter is 350 millimeters.
On the basis of technique scheme, be provided with the first zirconium dish in the described zirconium tube, the described first zirconium dish is positioned at the zirconium tube bottom.
On the basis of technique scheme, described zirconium tube has the second zirconium dish that supports the zirconium tube.
On the basis of technique scheme, be provided with the zircon sand layer between the described first zirconium dish and the second zirconium dish.
On the basis of technique scheme, be provided with the zircon sand layer between the described zirconium pallet and the second zirconium dish.
On the basis of technique scheme, described zirconium screen layer is divided into zirconium shielding upper strata and zirconium shielding lower floor.
On the basis of technique scheme, described vision slit divides vision slit upper strata and vision slit lower floor.
The beneficial effects of the utility model are: insulating sections comprises quartz tube and zirconium tube, and between quartz tube and the zirconium tube zircon sand layer is set, further strengthened heat insulation effect, and below crucible and zirconium tube, be provided with first and second zirconium dish respectively, strengthen the stability of heat-insulation system, made the temperature field more stable, can adapt to the growth of macrocrystal, reduce the probability of crystal cleavage, reduced the probability of crystal generation textural defect.
Description of drawings
Fig. 1 is the attemperator schematic cross-section of the utility model crystal growth.
Embodiment
Below in conjunction with accompanying drawing the utility model is described in further detail.
As shown in Figure 1, the attemperator of the utility model crystal growth comprises insulating sections, supports the support section of insulating sections, screen layer above insulating sections and observation crystalline vision slit.
Insulating sections comprises quartz tube 1 and the zirconium tube 2 that is attached with the zirconium felt, can place crucible in the described zirconium tube 2, and is provided with the zircon sand layer between described quartz tube and the zirconium tube 2; Quartz tube 1 thickness 10mm, diameter 350mm.Be attached with the zirconium felt on the quartz tube 1, the effect of zirconium felt has been that insulation effect plays protection quartz tube 1 simultaneously.Space in the zirconium tube 2 is for placing the space of crucible, (crucible is not shown).Zircon sand layer between described quartz tube 1 and the zirconium tube 2 is the first zircon sand layer 12, and it plays the effect that is incubated on side direction.Lower end in the zirconium tube 2 is provided with the first zirconium dish, 3, the first zirconium dishes 3 and is used for support crucible.The first zirconium dish, 3 belows also are provided with the second zirconium dish, 4, the second zirconium dishes 4 and are supported on the zirconium tube 2 times, play the effect of stabilised zirconia tube 2.Simultaneously, also be provided with the zircon sand layer between the first zirconium dish 3 and the second zirconium dish 4, it is the second zircon sand layer, 11, the second a zircon sand layer 11 except playing insulation effect, also works to adjust the crucible bottom first zirconium dish 3 height and planeness.Avoid crooked or sink to causing temperature to change because of crucible.
Support section comprises support zirconium tube 6 and zirconium pallet 5, supports zirconium tube 6 also plays insulation when supporting insulating sections effect.
The top of insulating sections is provided with the zirconium screen layer, effect is the thermal insulation layer that constitutes spatial gradient, axial gradient and radial gradient are arranged, this is determining the spatial temperature distribution, avoid crystal to ftracture in growth, the zirconium screen layer divides upper shielding layer 8 and following screen layer 7, owing to increased the height of zirconium screen layer, thereby reduced axial gradient, crystal rimose probability in growth is reduced.The effect of vision slit is to be convenient to the staff to grasp crystal growth situation in the crucible, so that the control crystal growth.Simultaneously, vision slit also comprises upper observation hole 10 and lower observation hole 9, has increased the height of vision slit, has also further reduced axial gradient, avoids crystal cleavage.
Claims (8)
1. the attemperator of a crystal growth is characterized in that: the attemperator of described crystal growth comprises,
One insulating sections, described attemperator comprise quartz tube and the zirconium tube that is attached with the zirconium felt, can place crucible in the described zirconium tube, and are provided with the zircon sand layer between described quartz tube and the zirconium tube;
One supports partly, and described support section supports attemperator, and described support section comprises the zirconium pallet that supports on zirconium tube and the support zirconium tube;
One zirconium screen layer, described zirconium screen layer are positioned at the attemperator top;
One vision slit, described vision slit is connected with insulating sections.
2. the attemperator of crystal growth according to claim 1, it is characterized in that: the thickness of described quartz tube is 10 millimeters, diameter is 350 millimeters.
3. the attemperator of crystal growth according to claim 1, it is characterized in that: be provided with the first zirconium dish in the described zirconium tube, the described first zirconium dish is positioned at the zirconium tube bottom.
4. as the attemperator of crystal growth as described in the claim 3, it is characterized in that: described zirconium tube has the second zirconium dish that supports the zirconium tube.
5. as the attemperator of crystal growth as described in the claim 4, it is characterized in that: be provided with the zircon sand layer between the described first zirconium dish and the second zirconium dish.
6. as the attemperator of crystal growth as described in the claim 5, it is characterized in that: be provided with the zircon sand layer between the described zirconium pallet and the second zirconium dish.
7. the attemperator of crystal growth according to claim 1, it is characterized in that: described zirconium screen layer is divided into zirconium shielding upper strata and zirconium shielding lower floor.
8. the attemperator of crystal growth according to claim 1, it is characterized in that: described vision slit divides vision slit upper strata and vision slit lower floor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201987554U CN201713597U (en) | 2010-05-20 | 2010-05-20 | Crystal growing heat preservation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201987554U CN201713597U (en) | 2010-05-20 | 2010-05-20 | Crystal growing heat preservation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201713597U true CN201713597U (en) | 2011-01-19 |
Family
ID=43459597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201987554U Expired - Lifetime CN201713597U (en) | 2010-05-20 | 2010-05-20 | Crystal growing heat preservation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201713597U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102304753A (en) * | 2011-08-31 | 2012-01-04 | 中山大学 | Crystal growth preparation system |
| CN103806102A (en) * | 2014-02-14 | 2014-05-21 | 闽能光电集团有限公司 | Thermal field structure for growth of sapphire crystal |
| CN105723019A (en) * | 2013-06-21 | 2016-06-29 | 南达科他州评议委员会 | Method of growing germanium crystals |
-
2010
- 2010-05-20 CN CN2010201987554U patent/CN201713597U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102304753A (en) * | 2011-08-31 | 2012-01-04 | 中山大学 | Crystal growth preparation system |
| CN105723019A (en) * | 2013-06-21 | 2016-06-29 | 南达科他州评议委员会 | Method of growing germanium crystals |
| US10125431B2 (en) | 2013-06-21 | 2018-11-13 | South Dakota Board Of Regents | Method of growing germanium crystals |
| CN103806102A (en) * | 2014-02-14 | 2014-05-21 | 闽能光电集团有限公司 | Thermal field structure for growth of sapphire crystal |
| CN103806102B (en) * | 2014-02-14 | 2017-01-11 | 闽能光电集团有限公司 | Thermal field structure for growth of sapphire crystal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GANZHOU QIANDONG LASER TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HUANGSHI JINGLI TECHNOLOGY CO., LTD. Effective date: 20120518 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 435006 HUANGSHI, HUBEI PROVINCE TO: 341000 GANZHOU, JIANGXI PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120518 Address after: 289 No. 341000 Jiangxi city of Ganzhou province Zhanggong District of Shuidong Qiandong Avenue (No. 5 workshop) Patentee after: Ganzhou Qiandong Laser Technology Co., Ltd. Address before: 435006 No. 96, Tieshan Avenue, Tieshan District, Hubei, Huangshi Patentee before: Huangshi Jingli Science and Technology Co., Ltd. |
|
| DD01 | Delivery of document by public notice |
Addressee: Yuan Yi Document name: Notification of Passing Examination on Formalities |
|
| CX01 | Expiry of patent term |
Granted publication date: 20110119 |
|
| CX01 | Expiry of patent term |