CN201241194Y - Laser crystal growth apparatus by induction heating iridium copple crystal pulling method - Google Patents
Laser crystal growth apparatus by induction heating iridium copple crystal pulling method Download PDFInfo
- Publication number
- CN201241194Y CN201241194Y CNU2008200636021U CN200820063602U CN201241194Y CN 201241194 Y CN201241194 Y CN 201241194Y CN U2008200636021 U CNU2008200636021 U CN U2008200636021U CN 200820063602 U CN200820063602 U CN 200820063602U CN 201241194 Y CN201241194 Y CN 201241194Y
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- preservation cylinder
- ceramic
- iridium crucible
- heat preservation
- crystal
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Abstract
The utility model discloses a Crystal growing device in a pulling method for an induction heating iridium crucible pot, which belongs to the field of laser crystal crystallization technology. The crystal growing device comprises a ceramic tray and a shim plate at the bottom, wherein a ceramic heat preservation cylinder is arranged on the ceramic tray, an induction coil is arranged outside the ceramic heat preservation cylinder, a ZrO2 insulating brick is arranged in the ceramic heat preservation cylinder, an iridium crucible pot is arranged on the shim plate, the iridium crucible pot is positioned inside the ZrO2 insulating brick, fused mass is arranged in the iridium crucible pot, the upper end of the ZrO2 ceramic heat preservation cylinder and the ZrO2 insulating brick is provided with an upper heat preservation cylinder with an observation opening and a ceramic observation baffle plate, the ceramic observation baffle plate is positioned outside the observation opening of the heat preservation cylinder, a seed rod is arranged above the iridium crucible pot, the lower end of the seed rod is provided with seed crystal, the lower end of the seed crystal is positioned above the fused mass, and the seed rod and the seed crystal are both positioned inside the heat preservation cylinder. The utility model has the advantages of simple structure, stable temperature field, convenient installation, light volatilization of the iridium crucible pot, no pollution of the surface of the iridium crucible pot, long service life, and the like. Moreover, the utility model has low investment, low power and low production cost.
Description
Technical field
The utility model relates to the laser crystals crystallization processes and learns the field.
Background technology
Present induction heating iridium crucible crystal pulling method laser crystal growth device, the one, on the side heat-insulation system, nearly all adopt and around iridium crucible, use ZrO
2Sand, this structure iridium crucible volatilization is serious and the pollution of iridium crucible outside surface is also very serious, the work-ing life of having reduced iridium crucible; The 2nd, employing iridium ring on iridium crucible, the invisible crystalline growth cost that increased; The 3rd, debug very inconvenient
The utility model content
The purpose of this utility model is: a kind of induction heating iridium crucible crystal pulling method laser crystal growth device is provided, it has solved well, and the iridium crucible volatilization that exists in the present induction heating iridium crucible crystal pulling method laser crystal growth device is serious, surface contamination is serious, iridium crucible is short work-ing life, the cost height is debug disadvantages such as inconvenience.
The technical solution of the utility model is: a kind of induction heating iridium crucible crystal pulling method laser crystal growth device, the ceramic pallet and the backing plate that comprise the bottom, the pottery pallet is provided with ceramic heat-preservation cylinder, and the ceramic heat-preservation cylinder outside is provided with ruhmkorff coil, and ceramic heat-preservation cylinder inboard is provided with ZrO
2Insulating brick be provided with iridium crucible above the backing plate, and iridium crucible is positioned at ZrO
2Melt is equipped with in the inboard of insulating brick in the iridium crucible, ceramic heat-preservation cylinder and ZrO
2The insulating brick upper end is provided with last heat-preservation cylinder and the ceramic viewing hood that has porthole, and ceramic viewing hood is positioned at the outside of heat-preservation cylinder porthole, the iridium crucible top is provided with seed rod, seed crystal is equipped with in the seed rod lower end, the seed crystal lower end is positioned at the top of melt, and seed rod, seed crystal all are positioned at the inboard of heat-preservation cylinder.
The utility model in use, the melt in decline seed crystal and the iridium crucible contact, by upwards lifting, rotate seed crystal, the adjustment heating power just can constantly grow crystal.
The beneficial effects of the utility model are: advantages such as simple in structure, temperature is stablized, debug conveniently, the iridium crucible volatilization is light, surperficial not contaminated, the long service life of iridium crucible, and drop into relatively little, power is low, the growth cost is low.
Below in conjunction with the drawings and specific embodiments the utility model is further specified.
Description of drawings
Accompanying drawing is a structural representation of the present utility model;
Reference numeral: the 1st, seed rod, the 2nd, seed crystal, the 3rd, crystal, the 4th, melt, the 5th, last heat-preservation cylinder, the 6th, ceramic viewing hood, the 7th, iridium crucible, the 8th, ruhmkorff coil, the 9th, ZrO
2Insulating brick, the 10th, ceramic heat-preservation cylinder, the 11st, backing plate, the 12nd, ceramic pallet, 13 is porthole.
Embodiment
As shown in drawings, a kind of induction heating iridium crucible crystal pulling method laser crystal growth device, the Al bottom comprising
2O
3Pottery pallet 12 and ZrO
2 Backing plate 11, Al
2O
3Pottery heat-preservation cylinder 10 places Al
2O
3On the pottery pallet 12, Al
2O
3The outside of pottery heat-preservation cylinder 10 is a ruhmkorff coil 8, Al
2O
3The inboard of pottery heat-preservation cylinder 10 is provided with ZrO
2Insulating brick 9, the iridium crucible 7 that melt 4 is housed places ZrO
2Above the backing plate 11, and iridium crucible 7 is positioned at ZrO
2The inboard of insulating brick 9, Al
2O
3Pottery heat-preservation cylinder 10 and ZrO
2Insulating brick 9 upper ends are provided with the ZrO that has porthole 13
2Last heat-preservation cylinder 5 and Al
2O
3Pottery viewing hood 6, Al
2O
3Pottery viewing hood 6 is positioned at ZrO
2The outside of last heat-preservation cylinder 5 portholes 13, there is iridium seed rod 1 iridium crucible 7 tops, and seed crystal 2 is equipped with in iridium seed rod 1 lower end, during use,, adjust heating power by upwards lifting, rotate seed crystal 2, just can constantly grow crystal 3, seed rod 1, seed crystal 2, crystal 3 are positioned at ZrO
2The inboard of last heat-preservation cylinder 5.Pottery heat-preservation cylinder 10 is to adopt not Lay one-tenth made of stones of corundum.
Need to prove: though the foregoing description has been described structure of the present utility model in detail; but the utility model is not limited to the foregoing description; the replacement structure that every those skilled in the art just can expect without creative work from the foregoing description all belongs to protection domain of the present utility model.
Claims (1)
1, a kind of induction heating iridium crucible crystal pulling method laser crystal growth device, it is characterized in that: the ceramic pallet (12) and the backing plate (11) that comprise the bottom, pottery pallet (12) is provided with ceramic heat-preservation cylinder (10), pottery heat-preservation cylinder (10) outside is provided with ruhmkorff coil (8), and ceramic heat-preservation cylinder (10) inboard is provided with ZrO
2Insulating brick (9) is provided with iridium crucible (7) above the backing plate (11), and iridium crucible (7) is positioned at ZrO
2Melt (4) is equipped with in the inboard of insulating brick (9) in the iridium crucible (7), ceramic heat-preservation cylinder (10) and ZrO
2Insulating brick (9) upper end is provided with last heat-preservation cylinder (5) and the ceramic viewing hood (6) that has porthole (13), and ceramic viewing hood (6) is positioned at the outside of heat-preservation cylinder porthole (13), iridium crucible (7) top is provided with seed rod (1), seed crystal (2) is equipped with in seed rod (1) lower end, seed crystal (2) lower end is positioned at the top of melt (4), and seed rod (1), seed crystal (2) all are positioned at the inboard of heat-preservation cylinder (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200636021U CN201241194Y (en) | 2008-05-30 | 2008-05-30 | Laser crystal growth apparatus by induction heating iridium copple crystal pulling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200636021U CN201241194Y (en) | 2008-05-30 | 2008-05-30 | Laser crystal growth apparatus by induction heating iridium copple crystal pulling method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201241194Y true CN201241194Y (en) | 2009-05-20 |
Family
ID=40714489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200636021U Expired - Lifetime CN201241194Y (en) | 2008-05-30 | 2008-05-30 | Laser crystal growth apparatus by induction heating iridium copple crystal pulling method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201241194Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103643291A (en) * | 2013-11-23 | 2014-03-19 | 中山兆龙光电科技有限公司 | Single crystal furnace heat shield and preparation method thereof |
| CN103966659A (en) * | 2013-01-25 | 2014-08-06 | 中国科学院上海硅酸盐研究所 | Potassium sodium niobate KNN single crystal preparation method |
| CN106087037A (en) * | 2016-08-30 | 2016-11-09 | 成都晶九科技有限公司 | Crystal pull growth furnace temperature field structure and pulling growth technique thereof |
| CN108893780A (en) * | 2018-07-19 | 2018-11-27 | 中山大学 | A kind of crystal growing apparatus and the double-doped LuAG crystal of a kind of Er, Yb and preparation method thereof |
| CN113607593A (en) * | 2021-07-30 | 2021-11-05 | 成都东骏激光股份有限公司 | Temperature measuring method for core area of temperature field in preparation process of high-temperature material |
| CN114277437A (en) * | 2020-09-28 | 2022-04-05 | 韩华思路信 | Ingot growing apparatus |
-
2008
- 2008-05-30 CN CNU2008200636021U patent/CN201241194Y/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103966659A (en) * | 2013-01-25 | 2014-08-06 | 中国科学院上海硅酸盐研究所 | Potassium sodium niobate KNN single crystal preparation method |
| CN103966659B (en) * | 2013-01-25 | 2016-08-03 | 中国科学院上海硅酸盐研究所 | The preparation method of potassium-sodium niobate KNN monocrystalline |
| CN103643291A (en) * | 2013-11-23 | 2014-03-19 | 中山兆龙光电科技有限公司 | Single crystal furnace heat shield and preparation method thereof |
| CN103643291B (en) * | 2013-11-23 | 2016-08-17 | 中山兆龙光电科技有限公司 | A kind of Single crystal furnace heat shield and preparation method thereof |
| CN106087037A (en) * | 2016-08-30 | 2016-11-09 | 成都晶九科技有限公司 | Crystal pull growth furnace temperature field structure and pulling growth technique thereof |
| CN108893780A (en) * | 2018-07-19 | 2018-11-27 | 中山大学 | A kind of crystal growing apparatus and the double-doped LuAG crystal of a kind of Er, Yb and preparation method thereof |
| CN114277437A (en) * | 2020-09-28 | 2022-04-05 | 韩华思路信 | Ingot growing apparatus |
| CN113607593A (en) * | 2021-07-30 | 2021-11-05 | 成都东骏激光股份有限公司 | Temperature measuring method for core area of temperature field in preparation process of high-temperature material |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 611630 Industrial Development Zone, Heshan Town, Pujiang County, Chengdu, Sichuan Patentee after: Chengdu Dongjun Laser Co., Ltd. Address before: 611630, No. 17, prosperous road, eco industrial park, Pujiang County, Sichuan, Chengdu Patentee before: Chengdu Dong-jun Laser Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20090520 |