CN203923451U - A kind of mold-hoisting installation of leading embrane method growth for sapphire crystal - Google Patents
A kind of mold-hoisting installation of leading embrane method growth for sapphire crystal Download PDFInfo
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- CN203923451U CN203923451U CN201420210490.3U CN201420210490U CN203923451U CN 203923451 U CN203923451 U CN 203923451U CN 201420210490 U CN201420210490 U CN 201420210490U CN 203923451 U CN203923451 U CN 203923451U
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- crucible
- crucible cover
- mould
- mold
- cover
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Abstract
The utility model relates to a kind of mold-hoisting installation of leading embrane method growth for sapphire crystal, comprise mould, lay the bearing of crucible, crucible cover and the support crucible earthenware bottom of mould, it is characterized in that: this device also comprises some suspension rods that drive crucible cover to move up and down, crucible cover is passed in this suspension rod bottom, and on the boom body of crucible cover lower end, is provided with support crucible cancelling nail; Between described mould and crucible cover, be connected threadably, between mould and crucible cover upper surface, place one layer of heat preservation carbon felt.The utility model has the advantage of: the random dismounting between mould, crucible cover and crucible three can be realized, and charging process can be simplified, simultaneously away from melt, not yielding because of edge on mould, also can extend die life, reduce long brilliant cost.
Description
Technical field
The utility model belongs to crystal manufacturing technology field, relates to a kind of mold-hoisting installation, particularly a kind of mold-hoisting installation of leading embrane method growth for sapphire crystal.
Background technology
Sapphire is a kind of aluminum oxide (α-Al
2o
3) monocrystalline, be commonly called as corundum, be by three Sauerstoffatoms and some aluminium atoms with the combination of covalent linkage form, belong to hexagonal system.Its fusing point is 2050 DEG C, and boiling point is 2980 DEG C, and maximum operating temperature can reach 1900 DEG C, is a kind of early artificial crystal material of Application and Development.The chemical property of sapphire crystal material is highly stable, generally water insoluble, acid and alkali, caustic corrosion; Sapphire crystal hardness and wear resistance can be high, for 9 grades of Mohs' hardness, is only second to the hardest diamond, can be used as the bearing materials of precision optical machinery; It has good mechanics and optical property, is a kind of desirable optical window material.In addition, sapphire crystal material is one of most popular Oxide substrate materials, has broad application prospects in fields such as microelectronics-photoelectron technology, communication, medical science.
The at present existing a variety of methods of the growth of sapphire crystal material, mainly contain: kyropoulos (Kyropolous method, be called for short Ky method), guided mode method (is Edge Defined Film-fed Growth techniques method, be called for short EFG method), heat-exchanging method (is Heat Exchange Method method, be called for short HEM method), crystal pulling method (Czochralski method is called for short Cz method), Bridgman method (Bridgman method, falling crucible method) etc.
Wherein lead embrane method and be applicable to tabular sapphire crystal growth, the method need be used different moulds, and in method in the past, mould is all direct and crucible cover is placed on crucible in the lump, grow in temperature-fall period at crystal, mould also can with crystallization together with melt in crucible, cause it all cannot separate with crucible with crucible cover, not only charging trouble, and mould also has moderate finite deformation, reduce work-ing life, in view of this, nowadays in the urgent need to designing a kind of new mold hoisting assembling structure, to address the above problem.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of mould in the past of avoiding cannot separate with crucible the mold-hoisting installation of leading embrane method growth for sapphire crystal that causes the problem reducing in die deformation and work-ing life.
For solving the problems of the technologies described above, the technical solution of the utility model is: a kind of mold-hoisting installation of leading embrane method growth for sapphire crystal, comprise mould, lay the bearing of crucible, crucible cover and the support crucible earthenware bottom of mould, its innovative point is: this device also comprises some suspension rods that drive crucible cover to move up and down, crucible cover is passed in this suspension rod bottom, and on the boom body of crucible cover lower end, is provided with support crucible cancelling nail; Between described mould and crucible cover, be connected threadably, between mould and crucible cover upper surface, place one layer of heat preservation carbon felt.
Further, on described crucible cover lower surface and crucible along between vertical range between 5-100mm.
Further, described suspension rod is evenly distributed on the edge of crucible cover in the form of a ring as the center of circle taking the center of crucible cover, and the distance of this suspension rod and crucible cover axis is between 20-200mm.
The utility model has the advantage of: adopt this device, can realize the random dismounting between mould, crucible cover and crucible three, and can simplify charging process, simultaneously because edge on mould is away from melt, not yielding, also can extend die life, reduce long brilliant cost.
Brief description of the drawings
Fig. 1 is a kind of schematic diagram of leading the mold-hoisting installation of embrane method growth for sapphire crystal of the utility model.
Embodiment
As shown in Figure 1, a kind of mold-hoisting installation of leading embrane method growth for sapphire crystal of the utility model comprises mould 1, lay crucible 2, the crucible cover 3 of mould and support the bearing 4 of crucible earthenware bottom, this device also comprises some suspension rods 6 that drive crucible cover 3 to move up and down, suspension rod 6 is evenly distributed on the edge of crucible cover 3 in the form of a ring as the center of circle taking the center of crucible cover 3, crucible cover 3 is passed in suspension rod 6 bottoms, and on the suspension rod 6 of crucible cover 3 lower ends, is provided with the pin 5 of support crucible lid 3; Between described mould 1 and crucible cover 3, be connected threadably, between mould 1 and crucible cover 3 upper surfaces, place one layer of heat preservation carbon felt.
In the present embodiment, the vertical range on crucible cover 3 lower surfaces and crucible 2 between edge is between 5-100mm, and the distance of suspension rod 5 and crucible cover 3 axis is between 20-200mm, and in this device, the material of each parts can be one or more in tungsten, molybdenum, iridium.
Use principle, crystal raw material heat fused, mould 1 is placed in crucible, crystal after fusing is sewed on the top that is raised to mould 1 by the capillary of mould 1, fuse together with seed crystal, under avidity and capillary effect, in the expansion of the top of mould 1, the expansion of crystal is limited by mould top, and crystal growth is vertical carrying out by the liquid film that flatly consumes melt and form in die tip.After crystal has been grown, the suspension rod 6 of slinging, unclamps that be threaded can mold removal 1, cancels pin 5 and can pull down crucible cover 3.
Claims (3)
1. lead the mold-hoisting installation of embrane method growth for sapphire crystal for one kind, comprise mould, lay the bearing of crucible, crucible cover and the support crucible earthenware bottom of mould, it is characterized in that: this device also comprises some suspension rods that drive crucible cover to move up and down, crucible cover is passed in this suspension rod bottom, and on the boom body of crucible cover lower end, is provided with support crucible cancelling nail; Between described mould and crucible cover, be connected threadably, between mould and crucible cover upper surface, place one layer of heat preservation carbon felt.
2. a kind of mold-hoisting installation of leading embrane method growth for sapphire crystal according to claim 1, is characterized in that: the vertical range on described crucible cover lower surface and crucible between edge is between 5-100mm.
3. a kind of mold-hoisting installation of leading embrane method growth for sapphire crystal according to claim 1, it is characterized in that: described suspension rod is evenly distributed on the edge of crucible cover in the form of a ring as the center of circle taking the center of crucible cover, the distance of this suspension rod and crucible cover axis is between 20-200mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420210490.3U CN203923451U (en) | 2014-04-28 | 2014-04-28 | A kind of mold-hoisting installation of leading embrane method growth for sapphire crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420210490.3U CN203923451U (en) | 2014-04-28 | 2014-04-28 | A kind of mold-hoisting installation of leading embrane method growth for sapphire crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203923451U true CN203923451U (en) | 2014-11-05 |
Family
ID=51819306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420210490.3U Expired - Fee Related CN203923451U (en) | 2014-04-28 | 2014-04-28 | A kind of mold-hoisting installation of leading embrane method growth for sapphire crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203923451U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104862775A (en) * | 2015-06-09 | 2015-08-26 | 江苏中电振华晶体技术有限公司 | Growth device for sapphire crystal hemisphere cover and growth method for sapphire crystal hemisphere cover |
| CN109797427A (en) * | 2019-03-27 | 2019-05-24 | 石河子市鑫磊光电科技有限公司 | A kind of KY method Sapphire Crystal Growth suspension type crucible cover and KY method Sapphire Crystal Growth device for adjusting height immediately |
| WO2022052081A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Universal mold for producing sapphire crystals by using edge-defined film-fed crystal growth method |
| CN116926669A (en) * | 2022-03-31 | 2023-10-24 | 连城凯克斯科技有限公司 | Sapphire armor plate preparation mold, preparation device and manufacturing process |
-
2014
- 2014-04-28 CN CN201420210490.3U patent/CN203923451U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104862775A (en) * | 2015-06-09 | 2015-08-26 | 江苏中电振华晶体技术有限公司 | Growth device for sapphire crystal hemisphere cover and growth method for sapphire crystal hemisphere cover |
| CN109797427A (en) * | 2019-03-27 | 2019-05-24 | 石河子市鑫磊光电科技有限公司 | A kind of KY method Sapphire Crystal Growth suspension type crucible cover and KY method Sapphire Crystal Growth device for adjusting height immediately |
| WO2022052081A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Universal mold for producing sapphire crystals by using edge-defined film-fed crystal growth method |
| CN116926669A (en) * | 2022-03-31 | 2023-10-24 | 连城凯克斯科技有限公司 | Sapphire armor plate preparation mold, preparation device and manufacturing process |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141105 Termination date: 20180428 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |