CN215713518U - Czochralski crystal growth furnace - Google Patents

Czochralski crystal growth furnace Download PDF

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Publication number
CN215713518U
CN215713518U CN202122184818.1U CN202122184818U CN215713518U CN 215713518 U CN215713518 U CN 215713518U CN 202122184818 U CN202122184818 U CN 202122184818U CN 215713518 U CN215713518 U CN 215713518U
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China
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furnace
lifting
crystal growth
guide sleeve
hearth
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CN202122184818.1U
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Chinese (zh)
Inventor
徐悟生
张磊
彭明林
朱逢锐
周方
刘雪松
韩世昌
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Qinhuangdao Microcrystalline Technology Co ltd
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Intrinic Crystal Technology Co ltd
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Abstract

The utility model discloses a crystal growth furnace adopting a Czochralski method, which comprises a lower furnace chamber and an upper furnace chamber which are arranged in an overlapped mode, wherein the bottom of the lower furnace chamber is arranged on a furnace chassis, the furnace chassis is arranged on a furnace body support, the top of the upper furnace chamber is provided with a furnace cover, an installation platform is also arranged above the furnace cover and is arranged on a portal frame, two guide posts are arranged between the installation platform and the furnace body support, a lifting power device and two lifting components are arranged on the installation platform, the two guide posts and the two lifting components are arranged in a pairwise matching mode, lifting sleeves are sleeved on the two guide posts and are connected with lifting rods corresponding to the lifting components, the two lifting sleeves are respectively connected with the furnace cover and the upper furnace chamber through a switching piece, and the lifting power device is connected with a lifting rod. The utility model can effectively utilize the internal space of the pulling furnace and is suitable for the growth of large and small crystals.

Description

Czochralski crystal growth furnace
Technical Field
The utility model relates to the field of crystal growth equipment, in particular to a crystal growth furnace adopting a pulling method.
Background
The Czochralski method is a common artificial crystal preparation method, and can be used for pulling and growing high-quality single crystal materials from a melt. The method is already applied to growing important artificial crystal materials such as sapphire single crystal, yttrium aluminum garnet single crystal, silicon germanium single crystal, calcium fluoride single crystal and the like. Compared with other crystal growth technologies, the crystal grown by the Czochralski method has low dislocation density, high optical uniformity and low internal stress, so that the Czochralski method growth technology is suitable for the growth of the fluoride optical crystal.
In order to ensure the uniformity of a temperature field in a furnace, a three-phase alternating current heating mode is required to be adopted for growing the fluoride optical crystal, the conventional pulling furnace for pulling crystal growth is of an integral structure and adopts a side-opening door mode, a hearth cannot move, and the conventional pulling furnace cannot be installed when a heat-insulating cylinder of a heater or the height of the heater is higher, so that the conventional pulling furnace can only be used for growing the fluoride optical crystal with a smaller size (less than 2 inches).
Disclosure of Invention
The utility model aims to provide a crystal growing furnace adopting a pulling method, which can effectively utilize the internal space of the pulling furnace and is suitable for the growth of large and small crystals.
In order to solve the technical problem, the utility model provides a crystal growth furnace adopting a pulling method, which comprises a lower furnace chamber and an upper furnace chamber which are arranged in an overlapped mode, wherein the bottom of the lower furnace chamber is arranged on a furnace chassis, the furnace chassis is arranged on a furnace body support, the top of the upper furnace chamber is provided with a furnace cover, a mounting platform is also arranged above the furnace cover, the mounting platform is arranged on a portal frame, two guide posts are arranged between the mounting platform and the furnace body support, a pulling power device and two lifting components are arranged on the mounting platform, the two guide posts and the two lifting components are arranged in a pairwise matching mode, lifting sleeves are sleeved on the two guide posts and connected with lifting rods corresponding to the lifting components, the two lifting sleeves are respectively connected with the furnace cover and the upper furnace chamber through a switching piece, and the pulling power device is connected with a pulling rod.
Further, the lower furnace chamber, the upper furnace chamber, the furnace base plate and the furnace cover are matched to form a furnace chamber, a temperature field and a crucible are arranged in the furnace chamber, the crucible is arranged in the temperature field and arranged on a lifting platform, and the lifting platform is connected with an external power assembly through a central shaft at the bottom.
Further, the temperature field includes a heat preservation section of thick bamboo and the heater of setting between a heat preservation section of thick bamboo and crucible, a heat preservation section of thick bamboo is 2 layer structures from last to down at least.
Furthermore, water clamping layers are arranged in the lower hearth, the upper hearth, the furnace base plate and the furnace cover.
Furthermore, the lower hearth and the upper hearth as well as the upper hearth and the furnace cover are fixed through a quick locking device.
Furthermore, a vacuum hole is formed in the furnace chassis, the furnace chassis is connected with a stainless steel pipe through the vacuum hole, and the stainless steel pipe is connected with a vacuum pump.
Furthermore, the guide post is sleeved with a reinforcing positioning sleeve, and the reinforcing positioning sleeve is fixedly connected with the lower hearth through a fixed connecting block.
Further, the lifting sleeve comprises a first guide sleeve, the bottom of the first guide sleeve is connected with the adaptor, a second guide sleeve is sleeved on the first guide sleeve, a limiting plate is arranged at the top of the second guide sleeve, and the second guide sleeve is connected with the lifting rod.
The utility model has the beneficial effects that:
1. the lower hearth and the upper hearth are matched to form a two-section hearth, and the upper hearth is replaced by different sizes, so that the height required by growth can be met, the growth size is greatly improved, and the growth requirements of crystals with different sizes are met;
2. because the two-section type hearth can meet the growth of the existing large-size crystal, when the size of the grown crystal needs to be changed, part of accessories can be directly replaced, the whole furnace body does not need to be changed, and the equipment cost can be greatly reduced.
3. Go up furnace and realize the automatic rising effect through the guide post and the cooperation of lifting unit, go up and down stably, conveniently to the internal temperature field dismouting of furnace and crystal take, improved practical convenience greatly.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic cross-sectional structure of the present invention;
FIG. 3 is a schematic view of the structure of the upper hearth and the furnace cover for avoiding the hearth;
FIG. 4 is a schematic view of the construction of the lifting sleeve portion of the present invention;
fig. 5 is a schematic cross-sectional structure of fig. 4.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Referring to fig. 1 and 2, an embodiment of the crystal growth furnace by the pulling method of the utility model comprises a lower furnace chamber 1 and an upper furnace chamber 2 which are arranged in an overlapping way, the bottom of the lower furnace chamber is arranged on a furnace chassis 3 which is arranged on a furnace body bracket, the top of the upper furnace chamber is provided with a furnace cover 4, a mounting platform 5 is also arranged above the furnace cover and arranged on a portal frame 6, two guide posts 7 are arranged between the mounting platform and the furnace body bracket, a pulling power device 8 and two lifting components 9 are arranged on the mounting platform, the two guide posts and the two lifting components are arranged in a pairwise matching way, lifting sleeves 10 are sleeved on the two guide posts and connected with lifting rods 11 of the corresponding lifting components, the two lifting sleeves are respectively connected with the furnace cover and the upper furnace chamber through a switching piece 12, the lifting components drive the lifting rods to lift and realize synchronous lifting movement of the furnace cover or the upper furnace chamber, the lifting power device is connected with the lifting rod 13, drives the lifting rod to lift and rotate, and can also weigh, and is connected with the seed rod used for crystal growth.
The furnace comprises a lower furnace chamber, an upper furnace chamber, a furnace base plate and a furnace cover, wherein the lower furnace chamber, the upper furnace chamber, the furnace base plate and the furnace cover are matched to form a furnace chamber, a temperature field 14 and a crucible 15 are arranged in the furnace chamber, the crucible is arranged in the temperature field, the crucible is arranged on a lifting platform, and the lifting platform is connected with an external power assembly through a central shaft 16 at the bottom. The external power assembly can drive the central shaft to lift and rotate, namely the crucible can rotate and lift, so that the liquid level in the crucible keeps the same height and is matched with crystal growth. The temperature field includes a heat preservation section of thick bamboo and the heater 18 of setting between a heat preservation section of thick bamboo 17 and crucible, and the heater adopts three-phase interchange heating structure, guarantees heating efficiency, and a heat preservation section of thick bamboo is from last to being 2 layer structures down at least, and convenient combination is the structure of different height dimensions and uses, and when the combination was used, the heat preservation section of thick bamboo of bottom can not be changed, practices thrift use cost.
The method comprises the steps of firstly charging the furnace before using, firstly lifting a lifting rod to the highest position, firstly taking off a seed rod if the seed rod is arranged, then sequentially lifting an upper cover and an upper hearth, then mounting a heater and a crucible, then charging raw materials into the crucible, then mounting a heat-insulating cylinder and an upper heat-insulating cover, lowering the upper hearth to the upper hearth and the lower hearth to be tightly adhered and sealed after the temperature field is mounted, penetrating the seed rod through the center of a furnace cover to be connected with the lifting rod, lowering the furnace cover to be sealed with the upper hearth after the concentricity is adjusted, enabling the furnace body to be in a sealed state, then starting a vacuum pump, pumping to the vacuum degree of 10-3Pa to start heating until the raw materials are melted, and starting crystal growth.
Because the upper hearth and the lower hearth are overlapped to form the whole height, the upper hearth and the lower hearth can be randomly configured according to the height of the heater, the requirements of convenient disassembly and assembly of the heater and the heat-insulating cylinder and convenient crystal taking are met, the growth of crystals with the size of 4 inches or more and the installation of a temperature field can be ensured, and the growth requirement of crystals with small sizes can also be met; when the small-size crystal grows, only the temperature field with the corresponding size needs to be replaced, and the application range is wide; all parts of the growth furnace are independently processed and assembled, and can be directly replaced when the parts are damaged or the structure needs to be changed, so that the service life of the growth furnace is prolonged, and the use cost is reduced, therefore, the growth furnace with the structure is more suitable for growing optical crystals or other kinds of artificial crystal materials.
And water clamping layers are arranged in the lower furnace chamber, the upper furnace chamber, the furnace base plate and the furnace cover and are used for isolating and cooling, and the furnace body is prevented from being damaged at high temperature. The lower furnace and the upper furnace as well as the upper furnace and the furnace cover are fixed through the quick locking devices, so that the operation is convenient and fast, and the disassembly and the assembly are convenient. The furnace chassis is provided with a vacuum hole, the furnace chassis is connected with a stainless steel pipe 19 through the vacuum hole, the stainless steel pipe is connected with a vacuum pump 20, and the vacuum pump vacuumizes the furnace chamber through the stainless steel pipe.
The cover is equipped with enhancement position sleeve 21 on above-mentioned guide post bottom, guarantees the firm effect of guide post, and the enhancement position sleeve passes through fixed connection piece 22 and lower furnace fixed connection to can guarantee that the guide post axial is unanimous and parallel with furnace axial down, stability when guaranteeing the counterpoint of going up the furnace installation.
Refer to fig. 3 and show, after last furnace rises, in order to guarantee the convenience that inside temperature field set up or not the fender, the ascending distance of going up furnace needs very big, has increased the length of carrying pole like this, also does not benefit to the preparation, consequently will go up the lift cover and design to rotatable structure, will go up the furnace and rise the back and rotate to one side to the mounting platform below space that will go up the furnace and occupy vacates, has great space at the equipment of temperature field or dismantlement in-process afterwards.
Specifically, referring to fig. 4 and 5, the lifting sleeve includes a first guide sleeve 23, the bottom of the first guide sleeve is connected to the adaptor, a second guide sleeve 24 is sleeved on the first guide sleeve, a limiting plate 25 is disposed at the top of the second guide sleeve, and the second guide sleeve is connected to the lifting rod. The limiting plate limits the second guide sleeve to move axially on the surface of the first guide sleeve, the first guide sleeve and the second guide sleeve move synchronously in the axial direction, and the first guide sleeve and the second guide sleeve are uniform in circular surface, so that the first guide sleeve and the second guide sleeve are not limited in the circumferential direction and can rotate relatively; after the lifter is connected with the second guide sleeve, the second guide sleeve can not rotate, and can only be lifted upwards by the lifter to move, namely, the first guide sleeve is driven to lift, the first guide sleeve is not limited in the circumferential direction, and the upper hearth can be driven to rotate after being lifted, and is transferred to the outer side, so that the assembly and disassembly in the hearth are not influenced.
The above embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the utility model is all within the protection scope of the utility model. The protection scope of the utility model is subject to the claims.

Claims (8)

1. The utility model provides a carry and draw method crystal growth stove, its characterized in that, including overlapping lower furnace and the last furnace that sets up, furnace bottom sets up on the furnace chassis down, the furnace chassis sets up on the furnace body support, it is provided with the bell to go up the furnace top, the bell top still is provided with mounting platform, mounting platform sets up on the portal frame, be provided with two guide posts between mounting platform and the furnace body support, be provided with on the mounting platform and carry power device and two lifting unit, two liang of cooperation settings of two guide posts and two lifting unit, all the cover is equipped with the lift cover on two guide posts, the lift cover is connected with the lifter that corresponds lifting unit, and two lift covers are connected with bell and last furnace respectively through the adaptor, carry and carry power device and be connected with the pull rod.
2. The Czochralski crystal growth furnace of claim 1, wherein the lower hearth, the upper hearth, the furnace floor and the furnace cover cooperate to form a furnace chamber, wherein a thermal field and a crucible are disposed within the furnace chamber, wherein the crucible is disposed within the thermal field, wherein the crucible is disposed on a lift platform, and wherein the lift platform is connected to an external power assembly via a bottom central axis.
3. A crystal growth furnace as claimed in claim 2, wherein the thermal field comprises a heat-retaining cylinder having at least a 2-layer structure from top to bottom and a heater disposed between the heat-retaining cylinder and the crucible.
4. The Czochralski crystal growth furnace of claim 1, wherein a water-holding layer is disposed within each of the lower hearth, the upper hearth, the furnace floor and the furnace lid.
5. A crystal growth furnace according to claim 1, wherein the lower hearth and the upper hearth and the furnace lid are fixed by a quick locking device.
6. The crystal growth furnace of claim 1, wherein the furnace bottom plate is provided with vacuum holes, and the furnace bottom plate is connected with a stainless steel tube through the vacuum holes, and the stainless steel tube is connected with a vacuum pump.
7. The Czochralski crystal growth furnace of claim 1, wherein the guide post is sleeved with a reinforcing positioning sleeve, and the reinforcing positioning sleeve is fixedly connected with the lower hearth through a fixed connecting block.
8. The czochralski crystal growth furnace of claim 1, wherein the lifting sleeve comprises a first guide sleeve, the bottom of the first guide sleeve is connected with the adapter, a second guide sleeve is sleeved on the first guide sleeve, a limiting plate is arranged at the top of the second guide sleeve, and the second guide sleeve is connected with the lifting rod.
CN202122184818.1U 2021-09-10 2021-09-10 Czochralski crystal growth furnace Active CN215713518U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202122184818.1U CN215713518U (en) 2021-09-10 2021-09-10 Czochralski crystal growth furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202122184818.1U CN215713518U (en) 2021-09-10 2021-09-10 Czochralski crystal growth furnace

Publications (1)

Publication Number Publication Date
CN215713518U true CN215713518U (en) 2022-02-01

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CN202122184818.1U Active CN215713518U (en) 2021-09-10 2021-09-10 Czochralski crystal growth furnace

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116676673A (en) * 2023-08-03 2023-09-01 北京奇峰蓝达光学科技发展有限公司 Crystal growth device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116676673A (en) * 2023-08-03 2023-09-01 北京奇峰蓝达光学科技发展有限公司 Crystal growth device
CN116676673B (en) * 2023-08-03 2023-11-21 北京奇峰蓝达光学科技发展有限公司 Crystal growth device

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Effective date of registration: 20230328

Address after: 066000 Green Chemical Industry Park, Lulong Economic Development Zone, Qinhuangdao City, Hebei Province, South of Yongwang Street, East of Kaiwu Road

Patentee after: Qinhuangdao microcrystalline Technology Co.,Ltd.

Address before: 066000 No.1 Xihu Road, Qinhuangdao Economic and Technological Development Zone, Qinhuangdao City, Hebei Province

Patentee before: INTRINIC CRYSTAL TECHNOLOGY CO.,LTD.

TR01 Transfer of patent right