CN201638844U

CN201638844U - High-power LED packaging substrate

Info

Publication number: CN201638844U
Application number: CN2010201125228U
Authority: CN
Inventors: 林宸纬; 廖嘉佑
Original assignee: H&T ELECTRONICS CO Ltd
Current assignee: H&T ELECTRONICS CO Ltd
Priority date: 2010-02-05
Filing date: 2010-02-05
Publication date: 2010-11-17
Anticipated expiration: 2020-02-05

Abstract

The utility model provides a high-power LED packaging substrate which is provided with a heat-conducting substrate, the surface of the heat-conducting substrate is provided with a circuit layer, the surface of the heat-conducting substrate is also connected with a high-power LED chip which is electrically connected with the circuit layer, the surface of the heat-conducting substrate is filled with a packaging layer for cladding the LED chip and the electric connecting part of the LED chip and the circuit layer, so that the waste heat generated by the LED chip can be directly guided out by the heat-conducting substrate, the heat-conducting substrate is not influenced by the heat resistance of the packaging layer, and the waste heat is dispersed directly through the heat exchange with the outside.

Description

The High Power LED base plate for packaging

Technical field

The utility model relates to a kind of High Power LED base plate for packaging, and You Zhike has good thermal diffusivity after allowing LED wafer encapsulate, and promotes the base plate for packaging to LED wafer characteristic, life-span and reliability.

Background technology

The luminous efficiency of light-emitting diode approximately is 15% to 20% at present; just Shu Ru electric energy has 15% to 20% can convert luminous energy to and disengage; remaining 80% to 85% is to be transformed into heat energy; the heat energy that the high-power light-emitting diode of healing produces also the more; if therefore package structure for LED can't make heat energy discharge effectively; just can constantly be accumulated in element internal; contact temperature when making the light-emitting diode operation rises; cause luminous efficiency reduction and emission wavelength to shorten; life-span also can reduce thereupon; and the packaged type of general light-emitting diode roughly needs through solid brilliant; routing bonding and model; Gu crystalline substance is that LED wafer is fixed on lead frame or the substrate; the routing bonding is to utilize hot pressing; the hot pressing mode that ultrasonic waves wedging or ultrasonic waves are auxiliary; the two ends of the gold thread of the about 10 μ m of diameter or aluminum steel are connected respectively on wafer and lead frame or the substrate; model promptly is lead frame or the substrate of finishing solid crystalline substance and routing bonding; fill epoxy resin protection wafer; yet because contact temperature=packaging thermal resistance * consumed power+encapsulation internal temperature; and epoxy resin has the phenomenon of xanthochromia under long-time high temperature; cause penetrance to descend; whole light output variable is reduced; therefore promptly there is relevant dealer to change method with resistant to elevated temperatures optics silica gel substituted epoxy resin; but the price of optics silica gel is about 100 times of epoxy resin; make production cost significantly increase much; hence one can see that, does from the heat dissipation problem of package design solution light-emitting diode and be only basic road.

Therefore, have good thermal diffusivity after how making LED package, reaching the target of brighter more power saving, and promote characteristic, life-span and reliability, be the problem of being engaged in research and development that this relevant dealer desires most ardently light-emitting diode.

Summary of the invention

Main purpose of the present utility model is to provide a kind of High Power LED base plate for packaging, and LED wafer can be dispelled the heat fast, to promote LED wafer characteristic, life-span and reliability.

For reaching above-mentioned purpose, the set base plate for packaging of High Power LED base plate for packaging described in the utility model has heat-conducting substrate, the heat-conducting substrate surface is provided with circuit layer, and be connected with high-power LED wafer on the heat-conducting substrate surface, and LED wafer and circuit layer are and are electrically connected, and fill out the encapsulated layer that coating LED wafer and LED wafer and circuit layer are electrically connected the place on the heat-conducting substrate surface.

During enforcement, described LED wafer and described circuit layer are electrically connected by lead.

During enforcement, be provided with the weld layer that forms with scolder between described LED wafer and the described heat-radiating substrate.

During enforcement, described circuit layer surface coverage has insulating barrier, and described insulating barrier is provided with the open-work that described circuit layer is exposed.

During enforcement, be provided with heat-conducting layer between described heat-conducting substrate surface and the described LED wafer.

Compared with prior art, High Power LED base plate for packaging described in the utility model can allow LED wafer dispel the heat fast, to promote LED wafer characteristic, life-span and reliability.

Description of drawings

Fig. 1 is that the side-looking section of the utility model preferred embodiment is made schematic diagram ();

Fig. 2 is that the side-looking section of the utility model preferred embodiment is made schematic diagram (two);

Fig. 3 is that the side-looking section of the utility model preferred embodiment is made schematic diagram (three);

Fig. 4 is the utility model side-looking generalized section of a preferred embodiment again;

Fig. 5 is the side-looking generalized section of the another preferred embodiment of the utility model.

Description of reference numerals: 1-base plate for packaging; The 11-heat-conducting substrate; The 12-circuit layer; The 13-LED wafer; The 14-encapsulated layer; The 15-lead; The 16-weld layer; The 17-insulating barrier; The 171-open-work; The 18-heat-conducting layer.

Embodiment

See also Fig. 1 to shown in Figure 3, find out by knowing among the figure, base plate for packaging 1 of the present utility model during fabrication, get a heat-conducting substrate 11 earlier, described heat-conducting substrate 11 forms for the material manufacturing of tool high thermal conductivity coefficient, and the material of high thermal conductivity coefficient can be copper, aluminium etc., and circuit layer 12 is set on heat-conducting substrate 11 surfaces and the coating scolder forms weld layer 16, again LED wafer 13 is placed weld layer 16 surfaces, make LED wafer 13 be positioned heat-conducting substrate 11 surfaces by weld layer 16, continue with lead 15 and be electrically connected LED wafer 13 and circuit layer 12, and lead can be gold thread or the aluminum steel of the about 10 μ m of diameter, fill out encapsulated layer 14 on heat-conducting substrate 11 surfaces with materials such as encapsulating material such as elargol epoxy resins again, make encapsulated layer 14 coat LED wafer 13, lead 15 and lead 15 are electrically connected the place with circuit layer 12, promptly finish manufacturing of the present utility model.

On the mat, when the utility model in use, described circuit layer 12 can import external power source, make power supply conduct to LED wafer 13 by lead 15, allow LED wafer 13 come into operation, because LED wafer 13 is directly connected in heat-conducting substrate 11 for utilizing weld layer 16, therefore the used heat that when running, produced of LED wafer 13, can be directly conducted to heat-conducting substrate 11, and because encapsulated layer 14 has only the LED wafer of coating 13 surfaces, so heat-conducting substrate 11 bottom surfaces are not subjected to the thermal resistance influence that encapsulated layer 14 is produced, and the used heat that it absorbed can be left fast.

Moreover, see also shown in Figure 4ly, described circuit layer 12 surface coverage have insulating barrier 17, and insulating barrier 17 is provided with open-work 171, circuit layer 12 is exposed by open-work 171, allow the user when using the utility model, external power source can directly pass open-work 171 and be electrically connected with circuit layer 12.

See also shown in Figure 5 again, find out by knowing among the figure, because described heat-conducting substrate 11 can have different characteristics because of material is different, for example aluminium material has good thermal diffusivity, but thermal conductance is just relative relatively poor, therefore, a heat-conducting layer 18 can be set between heat-conducting substrate 11 and LED wafer 13, conduct to heat-conducting substrate 11 with the used heat that allows LED wafer 13 be produced fast by heat-conducting layer 18 and carry out heat exchange.

Therefore, the utility model can solve prior art problems and disappearance, and can make LED wafer 13 reach the target of brighter more power saving, and lifting is to the characteristic of LED wafer 13, life-span and reliability, its key technology is, because contact temperature=packaging thermal resistance * consumed power+encapsulation internal temperature, and the used heat that LED wafer 13 of the present utility model is produced when running, can be directly conducted to heat-conducting substrate 11, and because of heat-conducting substrate 11 bottom surfaces are not subjected to the thermal resistance influence that encapsulated layer 14 is produced, heat-conducting substrate 11 can directly be seen through to leave used heat with heat exchange with outside, so the temperature of encapsulated layer 14 internal temperatures can greatly reduce, and the thermal resistance that encapsulated layer 14 is produced also only can influence part heat-conducting substrate 11, therefore after packaging thermal resistance and encapsulation internal temperature decline to a great extent, contact temperature also can decline to a great extent naturally, allows LED wafer 13 reach brighter more power saving, and promotes its characteristic, life-span and reliability.

More than explanation is just illustrative for the utility model; and it is nonrestrictive; those of ordinary skills understand; under the situation of the spirit and scope that do not break away from claims and limited; can make many modifications, variation or equivalence, but all will fall in the protection range of the present utility model.

Claims

1. High Power LED base plate for packaging, described base plate for packaging has heat-conducting substrate, and described heat-conducting substrate surface is provided with circuit layer, it is characterized in that:

Described heat-conducting substrate surface is connected with high-power LED wafer, and described LED wafer and described circuit layer are and are electrically connected, and fill out the encapsulated layer that described LED wafer of coating and described LED wafer and described circuit layer are electrically connected the place on described heat-conducting substrate surface.

2. High Power LED base plate for packaging as claimed in claim 1 is characterized in that, described LED wafer and described circuit layer are electrically connected by lead.

3. High Power LED base plate for packaging as claimed in claim 1 is characterized in that, is provided with the weld layer that forms with scolder between described LED wafer and the described heat-radiating substrate.

4. High Power LED base plate for packaging as claimed in claim 1 is characterized in that, described circuit layer surface coverage has insulating barrier, and described insulating barrier is provided with the open-work that described circuit layer is exposed.

5. High Power LED base plate for packaging as claimed in claim 1 is characterized in that, is provided with heat-conducting layer between described heat-conducting substrate surface and the described LED wafer.