CN201603713U

CN201603713U - Wet cleaner

Info

Publication number: CN201603713U
Application number: CN2009202134240U
Authority: CN
Inventors: 朱建野; 曾辉; 杜亮; 杨永刚
Original assignee: Semiconductor Manufacturing International Shanghai Corp
Current assignee: Semiconductor Manufacturing International Beijing Corp
Priority date: 2009-12-15
Filing date: 2009-12-15
Publication date: 2010-10-13
Anticipated expiration: 2019-12-15

Abstract

The utility model discloses a wet cleaner which comprises a chemical cleaning tank, a rinsing tank and a drainage tank positioned between the chemical cleaning tank and the rinsing tank. The middle part of the drainage tank is recessed; edges at the non-recessed part of the drainage tank are respectively jointed with the chemical cleaning tank and the rinsing tank; and a water retaining bar projecting out of the upper surface of the non-recessed part of the drainage tank is equal to the edge of the rinsing tank in length and is included on the edge of the drainage tank close to one side of the rinsing tank and used for preventing liquid drop on the upper surface of the drainage tank from falling into the rinsing tank. The wet cleaner can prevent liquid drop mixed with photoresist particles from flowing into the rinsing tank by adopting the novel scheme to bring along pollution.

Description

Wet clean equipment

Technical field

The utility model relates to semiconductor integrated circuit manufacturing technology field, particularly a kind of wet clean equipment.

Background technology

Crystal column surface is before standing PROCESS FOR TREATMENT, and its surface must be clean.In case crystal column surface is stain, must get rid of by cleaning.Described contamination may be from the pollutant in the environment, or in preceding technical process at the residual useless material of crystal column surface.

The crystal column surface cleaning method that dominates is that wet chemistry method cleans, or is called for short wet-cleaning.Wet chemistry method cleans the residue that need remove with chemical agent and crystal column surface exactly and reacts, thereby makes residue peel off the purpose that reaches cleaning from crystal column surface.After finishing, wet-cleaning also must remove residual chemical agent on the wafer.Therefore all following high-purity deionized water after each step wet clean process cleans.

Fig. 1 shows the partial schematic diagram of wet clean equipment, and the thick arrow of white represents to transmit in the cleaning direction of wafer.Holding the chemical agent 102 that is used for wafer is carried out wet-cleaning in the Chemical cleaning groove 101,106 of potchers are holding highly purified deionized water 107.Be rhone 105 between Chemical cleaning groove 101 and the potcher 106, the both sides height is hanged down in the middle of being in the cross section of rhone 105, prevents that the liquid in the rhone 105 from flowing into Chemical cleaning groove 101 or potcher 106.

The wafer 104 of one batch (generally being 25 wafer or 50 wafer) is fixed and is placed in the chuck 103, and chuck 103 at first immerses a period of time in the chemical agent 102 in the Chemical cleaning groove 101.During this period of time, can apply (frequency range 800 is to 1200kHz) million to chemical agent 102 with mega sonic wave (megasonics) generator (not shown in Figure 1), trickle bubble occurs and flow because million meetings cause in the liquid, more help to make wafer 104 surfaces removing residues.Then, chuck 103 (comprising the wafer 104 that is placed in the chuck 103) is taken out from Chemical cleaning groove 101, and chuck 103 (and placement wafer 104 wherein) is immersed in the deionized water 107 of potcher 106.Sometimes use the nitrogen bubble device to order about deionized water and flow, promote deionized water and mix with the residual chemical agent on wafer 104 surfaces.In this course, deionized water constantly is input in the potcher 106, and the unnecessary deionized water of constantly draining can make highly purified deionized water constantly replace the deionized water that has dissolved chemical agent like this, guarantees that wafer 104 surfaces are thoroughly cleaned up.

When removing the residual photoresist of crystal column surface with as shown in Figure 1 wet clean equipment, usually can find: after Chemical cleaning and rinsing, crystal column surface still can residual a considerable amount of photoresists.Be illustrated in figure 2 as the electron scanning image with the crystal column surface behind the wet-cleaning removal photoresist, wherein left side figure is the scan image of whole wafer, and great circle is the profile of wafer, and the point on it is residual photoresist.The image of right figure after for one of them point amplification.

In order thoroughly to wash the photoresist of crystal column surface, the normal mode that adopts is in the prior art: adopt n Chemical cleaning groove (n is more than or equal to 2), be called T1, T2......Tn, all hold the chemical agent that is used to remove photoresist in each Chemical cleaning groove, wafer is immersed among the T1 earlier cleans, and then immerse among the T2 and clean ... immerse Tn at last, and then wafer immersed use rinsed with deionized water in the potcher.Cause following problem but do like this:

1, need plural Chemical cleaning groove, and the chemical agent amount that consumes also increases the equipment cost increase than a Chemical cleaning groove;

2, the step of wet clean process increases, and required time increases, and has reduced production efficiency.

The utility model content

In view of this, the purpose of this utility model is, proposes a kind of wet clean equipment, can reduce the cost of wet-cleaning, and shortens the required time of technology.

A kind of wet clean equipment that the utility model embodiment proposes, comprise Chemical cleaning groove, potcher and the rhone between Chemical cleaning groove and potcher, the rhone concavity, the edge of rhone lands engages Chemical cleaning groove and potcher respectively; Described rhone also comprises the water bar of outstanding rhone lands upper surface near on the edge of potcher one side, and the length of described water bar equals the length at potcher edge, is used for preventing that the drop of rhone upper surface from falling into potcher.

The right angled triangle of the cross section of described water bar for being made of hypotenuse, the straight horizontal arm of angle and the vertical straight arm of angle, described hypotenuse is than the central authorities of the more close rhone of the vertical straight arm of angle.

Described water bar peak is 0.5 centimetre to 0.8 centimetre with respect to the difference in height of the upper surface of rhone lands.

Preferably, described water bar is to be fixed on rhone near on the edge of potcher one side by mode bonding or that screw is fixing.

Perhaps, the nonpitting part of described water bar and rhone commaterial global formation.

As can be seen from the above technical solutions, the wet clean equipment that the utility model embodiment proposes is to adopt water bar to prevent that the drop that is mixed with the photoresist particle from flowing into potcher and bringing pollution, has following advantage with respect to wet clean equipment of the prior art:

1, cost greatly reduces.In the prior art for fear of the residual photoresist particle of crystal column surface, wafer need be immersed successively in two or more Chemical cleaning grooves, and present embodiment only needs a Chemical cleaning groove can reach identical purpose, no matter still be used to the consumption of the chemical agent that cleans, all save to some extent than prior art from Chemical cleaning groove equipment.

2, improved process efficiency.Owing to only need primary chemical cleaning, saved the time, thereby improved the efficient of technology.

3 if adopt the water bar of separate type, only needs simply transform and can implement existing wet clean equipment, but also exist durability not high, if combine to such an extent that the situation of seepage closely might not occur with rhone; The water bar of integral type is then more durable in use, and leakage problems can not occur.

Description of drawings

Fig. 1 is the structural representation of wet clean equipment of the prior art;

Fig. 2 is the electron scanning image that wet-cleaning is removed crystal column surface behind the photoresist in the prior art;

Fig. 3 is the structural representation of the wet clean equipment of the utility model embodiment;

Fig. 4 is two kinds of possible cross sectional representation of the water bar in the wet clean equipment of the utility model embodiment proposition.

The specific embodiment

For making the purpose of this utility model, technical scheme and advantage clearer, the utility model is described in further detail below in conjunction with accompanying drawing.

Utility model people removes in the photoresist process wet-cleaning, and the reason of the residual photoresist of crystal column surface has been carried out following analysis:

Electron scanning image by observing crystal column surface shown in Figure 2 as can be known, though the residual particulate that photoresist is arranged of crystal column surface, but shape from the photoresist particulate, should not that the photoresist attached to crystal column surface passes through the residual part of Chemical cleaning after the etching, but adhere to up again after cleaning.Therefore, utility model people thinks, in order thoroughly to remove the photoresist particle of crystal column surface, need not to increase the quantity of Chemical cleaning groove, as long as and prevent that the photoresist particle that washes is attached to crystal column surface again.

In order to accomplish this point, at first must make the source of these photoresist particles clear.Utility model people thinks through after the wet-cleaning process analyzed: because the residual quantity of photoresist is more much bigger than the amount of common pollutant, so will soon be full of the particulate of the residue that photoresist and etching produce in the chemical agent in the Chemical cleaning groove.When the process of chuck being taken out and puts into potcher from the Chemical cleaning groove, can pass through rhone, and through the rhone time, the chemical agent that adheres on chuck and the wafer can drip inevitably and spatter on rhone.And contain a large amount of photoresist particles in these chemical agents.As shown in Figure 1, suppose that these chemical agent drops 108 that contain a large amount of photoresist particles are on the rhone 105 and close potcher 106 1 sides, then probably drip and sneak in the deionized water 107, part in the photoresist particle that wherein mixes might just become observed photoresist particle among Fig. 2 at last attached on the wafer.

As seen from the above analysis, the important source of the residual photoresist particle of crystal column surface is the pollution of rhone.At this problem, the utility model embodiment proposes a kind of wet clean equipment, and this wet clean equipment comprises Chemical cleaning groove 301 and potcher 306, and is positioned at described rhone 305 between the two.Rhone 305 concavities, the edge of rhone 305 lands engages Chemical cleaning groove 301 and potcher 306 respectively; The water bar 309 that also comprises outstanding rhone 305 lands upper surfaces at the edge of rhone 305 close potcher 306 1 sides is used to prevent that the drop that drops on rhone 305 upper surfaces from flowing into potcher 306.

The length of described water bar 309 equals the length at rhone 305 edges, and the cross section of water bar 309 is right angled triangle preferably, and a right-angle side lies in a horizontal plane on the rhone 305, and hypotenuse is than the central authorities of the more close rhone 305 of vertical right-angle side.When placing in the manner described, the peak of water bar 309 is preferably 0.5 centimetre to 0.8 centimetre with respect to the difference in height of the upper surface of rhone 305 lands.

The cross section of water bar 309 also can be certain shape that is similar to right angled triangle, for example has right-angle side and hypotenuse, but the angle is circular-arc.Also can be that hypotenuse or vertical right-angle side change curve into.Fig. 4 shows two kinds of examples of water bar cross section.

Water bar 309 can be to be the assemblies that separate with rhone 305, utilizes specific fixed form (for example, bonding, screw fixing etc.) water bar 309 to be fixed on the edge of close potcher 306 1 sides of rhone 305.Perhaps, water bar 309 can be rhone 305 (or rhone lands) inalienable part with rhone 305, is to use the commaterial global formation.

The wet clean equipment that the utility model embodiment proposes has following advantage with respect to wet clean equipment of the prior art:

The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection domain of the present utility model.

Claims

1. a wet clean equipment comprises Chemical cleaning groove, potcher and the rhone between Chemical cleaning groove and potcher, the rhone concavity, and the edge of rhone lands engages Chemical cleaning groove and potcher respectively; It is characterized in that, described rhone is near on the edge of potcher one side, also comprise the water bar of outstanding rhone lands upper surface, the length of described water bar equals the length at potcher edge, is used for preventing that the drop of rhone upper surface from falling into potcher.

2. wet clean equipment according to claim 1 is characterized in that, the right angled triangle of the cross section of described water bar for constituting by hypotenuse, the straight horizontal arm of angle and the vertical straight arm of angle, and described hypotenuse is than the central authorities of the more close rhone of the vertical straight arm of angle.

3. wet clean equipment according to claim 1 is characterized in that, described water bar peak is 0.5 centimetre to 0.8 centimetre with respect to the difference in height of the upper surface of rhone lands.

4. wet clean equipment according to claim 1 is characterized in that, described water bar is to be fixed on rhone near on the edge of potcher one side by mode bonding or that screw is fixing.

5. wet clean equipment according to claim 1 is characterized in that, the nonpitting part of described water bar and rhone commaterial global formation.