CN110335835A - Utilize the device and method of two-period form quartz nozzle cleaning silicon chip - Google Patents
Utilize the device and method of two-period form quartz nozzle cleaning silicon chip Download PDFInfo
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- CN110335835A CN110335835A CN201910490436.6A CN201910490436A CN110335835A CN 110335835 A CN110335835 A CN 110335835A CN 201910490436 A CN201910490436 A CN 201910490436A CN 110335835 A CN110335835 A CN 110335835A
- Authority
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- China
- Prior art keywords
- silicon wafer
- washer jet
- peripheral part
- center portion
- wafer
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 136
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 136
- 239000010703 silicon Substances 0.000 title claims abstract description 136
- 238000004140 cleaning Methods 0.000 title claims abstract description 36
- 239000010453 quartz Substances 0.000 title claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000002093 peripheral effect Effects 0.000 claims abstract description 45
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000012530 fluid Substances 0.000 claims abstract description 19
- 239000007921 spray Substances 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 8
- 241000602850 Cinclidae Species 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000003814 drug Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 7
- 239000012141 concentrate Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 74
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/14—Removing waste, e.g. labels, from cleaning liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention provides a kind of device and method using two-period form quartz nozzle cleaning silicon chip, central portion and peripheral part in silicon wafer face are cleaned using different water flows respectively, use 4 row's nozzles, the central portion region of 2 row's wafer center portion's washer jets concentration cleaning silicon chip, 2 row's silicon wafer peripheral part washer jets mainly concentrate the edge part of cleaning silicon chip, different location of certain time difference according to same flow velocity for every piece of silicon wafer are arranged, flush points are arranged.Two kinds of nozzles replace jet flow, guarantee that each nozzle can supply medical fluid according to same flow, prevent from causing water-flow equation in unbalanced or single piece of silicon wafer face of the clearance flow in slot between silicon wafer inhomogenous due to underfed, control the influence at this to minimum.It is combined using different water flows, clean the whole face of silicon wafer can sufficiently, reduce amounts of particles.
Description
Technical field
The present invention relates to semiconductors to clean field, and in particular to a kind of device using two-period form quartz nozzle cleaning silicon chip
And method.
Background technique
Semi-conductor silicon chip uses upper essential semiconductor material currently as automobile, mobile phone, PC (personal computer) etc.
Material also has higher requirement the silicon wafer of basic material, especially exists as the lighting of semiconductor devices and concentration degree develop
Clean aspect has higher standard and the request.
So it is imperative to promote clean process capability in silicon wafer manufacturing engineering.
But silicon wafer is in the fabrication process, needs, in processing, to need to use packet by grinding, the process such as grinding
Containing the lapping liquid that aluminium and silicon are considered to be worth doing, this results in small grinding to consider the surface for remaining in silicon wafer with polishing particles to be worth doing, difficult when cleaning
With removal, remain in the surface of silicon wafer.
As improved scheme, although have when clean using SC-1 (solution of NH4OH and H2O2), SC-2 (H2O2
With the solution of HCl), the medical fluids such as interfacial agent, but when carrying out single batch processing, since the control force of medical fluid is uneven
It is even, all silicon wafers reach homogenization cleaning or it is highly difficult.Therefore it can generate some local bad, have on silicon wafer
The problems such as liquor residue of strip or mottled foreign matter residual and corrosion patch.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of device using two-period form quartz nozzle cleaning silicon chip
And method, central portion and peripheral part in silicon wafer face are cleaned using different water flows respectively, use 4 row's nozzles, 2 row's silicon wafers
Central portion washer jet concentrates the central portion region of cleaning silicon chip, and 2 row's silicon wafer peripheral part washer jets mainly concentrate cleaning silicon chip
Edge part, different location of certain time difference according to same flow velocity for every piece of silicon wafer is set, flush points is set.Two kinds of nozzles
Alternately jet flow guarantees that each nozzle can supply medical fluid according to same flow, prevents from leading to silicon wafer in slot due to underfed
Between unbalanced or single piece of silicon wafer face of clearance flow in water-flow equation it is inhomogenous, control influence at this to minimum.Make
It is combined with different water flows, clean the whole face of silicon wafer can sufficiently, reduce amounts of particles.
The technical scheme is that using the device of two-period form quartz nozzle cleaning silicon chip, including multiple dippers, institute
The bracket base placed side by side for there are several to be capable of fixing silicon wafer in dipper is stated, is provided with 2 row's silicon below the bracket base
Piece central portion washer jet and 2 row's silicon wafer peripheral part washer jets.
Further, 2 row wafer center portion washer jet, 1 ranking is in the lower left of bracket base, and 1 ranking is in branch
The lower right of frame pedestal, and corresponding one group of nozzle between each adjacent two bracket base: the nozzle of lower left one and lower right one
A nozzle, against the gap between two neighboring silicon wafer, the water flow that jet expansion sprays rushes at adjacent two jet expansions
Two silicon wafer centers.
Further, the 2 row silicon wafer peripheral part washer jet is located at the outer of 2 row's wafer center portion washer jets
Side, and the corresponding one group of nozzle in each bracket base bottom: one nozzle of one nozzle of left bottom and bottom right side, two nozzles
The water flow that outlet sprays rushes at circumference and right side circumference on the left of silicon wafer respectively.
Further, equal at the inlet of 2 row wafer center portion's washer jet and 2 row's silicon wafer peripheral part washer jets
It is provided with switch valve.
The present invention also provides two sections of the utilizations realized according to the device using two-period form quartz nozzle cleaning silicon chip
The method of formula quartz nozzle cleaning silicon chip, the specific steps are as follows:
Step 1: being put into silicon wafer in dipper；
Step 2: closing silicon wafer peripheral part washer jet opens wafer center portion washer jet, the cleaning spray of wafer center portion
Mouth, which is concentrated to the central part of silicon wafer, sprays medical fluid, upper up-flow will be formed in the upper direction of dipper at this time, in silicon wafer face
Foreign matter be driven peel off with water flow rise to surface then overflow wash away, dipper top outflow medical fluid and foreign matter
In the external slot that the edge of dipper flows to outer layer, then sequence enters pipeline, circulating pump, filter and heater, then
Liquid is returned again to formation circulation in wafer center portion washer jet；
Step 3: closing wafer center portion washer jet opens silicon wafer peripheral part washer jet, the cleaning spray of silicon wafer peripheral part
Mouth, which is concentrated to the peripheral portion of silicon wafer two sides, sprays medical fluid, will form upper up-flow, silicon wafer in the upper direction of dipper at this time
The foreign matter at edge be driven peels off with water flow rise to surface then overflow wash away, dipper top outflow medical fluid and
Foreign matter is in the external slot that the edge of dipper flows to outer layer, and then sequence enters pipeline, circulating pump, filter and heater,
Then liquid is returned again to formation circulation in silicon wafer peripheral part washer jet；
Step 4: alternately step 2 and step 3 is multiple；
Step 5: simultaneously closing off silicon wafer peripheral part washer jet and wafer center portion washer jet, silicon wafer is taken out.
Further, in step 2 and step 3 silicon wafer peripheral part washer jet and wafer center portion washer jet flow velocity
It is identical.
Further, in step 2 and step 3 silicon wafer peripheral part washer jet and wafer center portion washer jet flow velocity
For 5mm/sec~20mm/sec.
Further, the washing time of each circulation of silicon wafer peripheral part washer jet is 6sec~25sec, step in step 2
The washing time of each circulation of wafer center portion washer jet is 6sec~25sec in rapid three.
The beneficial effects of the present invention are:
1, on silicon wafer scrubber, the liquid medicine jet nozzle aperture in the dippers such as SC-1 is increased at 4 by 2 before, most main
It wants to be characterized in being cleaned using different water flows respectively in the central portion and peripheral part in silicon wafer face.
2, the liquid stream in slot is made to reach equal come coutroi velocity by the varying aperture of nozzle in water when cleaning in the prior art
Homogenized effect；This patent is the shape for not changing aperture and nozzle, but uses 4 row's nozzles, the cleaning spray of 2 row's wafer center portions
Mouth concentrates the central portion region of cleaning silicon chip, and 2 row's silicon wafer peripheral part washer jets mainly concentrate the edge part of cleaning silicon chip, is arranged
Flush points are arranged in different location of certain time difference according to same flow velocity for every piece of silicon wafer.Two kinds of nozzles replace jet flow, guarantee
Each nozzle can supply medical fluid according to same flow, prevent from causing in slot between the silicon wafer of 25 (50) piece due to underfed
Water-flow equation is inhomogenous in unbalanced or single piece of silicon wafer face of clearance flow, controls the influence at this to minimum.
3, it is combined using different water flows, clean the whole face of silicon wafer can sufficiently, reduce amounts of particles.
4, when silicon wafer cleans in dipper, since the bracket base of bottom and silicon wafer contact position have been easy particle residue,
The particle of contact position silicon chip edge is effectively reduced by the setting of two blast tubes.
Detailed description of the invention
Fig. 1 is the signal using the wafer center portion washer jet water spray of the device of two-period form quartz nozzle cleaning silicon chip
Figure；
Fig. 2 is the signal using the silicon wafer peripheral part washer jet water spray of the device of two-period form quartz nozzle cleaning silicon chip
Figure.
In figure: 1 is dipper, and 2 be wafer center portion washer jet, and 3 be bracket base, and 4 be silicon wafer, and 5 be wafer center
Liquid flow direction when portion's washer jet is sprayed water, 6 be silicon wafer peripheral part washer jet, and 7 spray water for silicon wafer peripheral part washer jet
When liquid flow direction.
Specific embodiment
Following further describes the present invention with reference to the drawings.
It is placed side by side in dipper 1 to have using the device of two-period form quartz nozzle cleaning silicon chip, including multiple dippers 1
Several are capable of fixing the bracket base 3 of silicon wafer 4, and 2 row's wafer center portion washer jets 2 and 2 rows are provided with below bracket base 3
Silicon wafer peripheral part washer jet 6.
The ranking of 2 row's wafer center portion washer jets 2,1 is in the lower left of bracket base 3, and 1 ranking is in the right side of bracket base 3
Lower section, and corresponding one group of nozzle between each adjacent two bracket base 3: the nozzle of lower left one and the nozzle of lower right one, two
Against the gap between two neighboring silicon wafer, the water flow that jet expansion sprays rushes in two neighboring silicon wafer a jet expansion
Heart position.
2 row's silicon wafer peripheral part washer jets 6 are located at the outside of 2 row's wafer center portion washer jets 2, and each bracket
3 bottom of pedestal corresponds to one group of nozzle: one nozzle of one nozzle of left bottom and bottom right side, the water that two jet expansions spray
Stream rushes at circumference and right side circumference on the left of silicon wafer respectively.
Switch is provided at the inlet of 2 row's wafer center portion washer jets 2 and 2 row's silicon wafer peripheral part washer jets 6
Valve.
Utilize the method for two-period form quartz nozzle cleaning silicon chip, the specific steps are as follows:
Step 1: being put into silicon wafer in dipper.
Step 2: closing silicon wafer peripheral part washer jet opens wafer center portion washer jet, as shown in Figure 1, in silicon wafer
Centre portion washer jet, which is concentrated to the central part of silicon wafer, sprays medical fluid.
Will form upper up-flow in the upper direction of dipper at this time, the foreign matter in silicon wafer face be driven peel off with
Water flow rise to surface then overflow wash away, the medical fluid and foreign matter of dipper top outflow at the edge of dipper flow to outer layer
External slot in, then sequence enter pipeline, circulating pump, filter and heater, then liquid is returned again to wafer center portion
Circulation is formed in washer jet；As nozzle flow velocity 20mm/sec, the wafer center portion washer jet washing time of each circulation
For 6sec；As nozzle flow velocity 5mm/sec, the wafer center portion washer jet washing time of each circulation is 25sec.Periphery and
Central part water spray, alternately.
Step 3: closing wafer center portion washer jet opens silicon wafer peripheral part washer jet, as shown in Fig. 2, outside silicon wafer
Circumference washer jet, which is concentrated to the peripheral portion of silicon wafer two sides, sprays medical fluid.
Will form upper up-flow in the upper direction of dipper at this time, the foreign matter of silicon chip edge be driven peel off with
Water flow rise to surface then overflow wash away, the medical fluid and foreign matter of dipper top outflow at the edge of dipper flow to outer layer
External slot in, then sequence enter pipeline, circulating pump, filter and heater, then liquid is returned again to silicon wafer peripheral part
Circulation is formed in washer jet；As nozzle flow velocity 20mm/sec, the silicon wafer peripheral part washer jet washing time of each circulation
For 6sec；As nozzle flow velocity 5mm/sec, the silicon wafer peripheral part washer jet washing time of each circulation is 25sec.Periphery and
Central part water spray, alternately.
Step 4: alternately step 2 and step 3 is multiple；
Step 5: simultaneously closing off silicon wafer peripheral part washer jet and wafer center portion washer jet, silicon wafer is taken out.
The device and method of two-period form quartz nozzle cleaning silicon chip, central portion and peripheral part in silicon wafer face are utilized using this
It is cleaned respectively using different water flows, using 4 row's nozzles, 2 row's wafer center portion's washer jets are concentrated in cleaning silicon chip
Centre portion region, 2 row's silicon wafer peripheral part washer jets mainly concentrate the edge part of cleaning silicon chip, certain time difference are arranged according to same
Flush points are arranged for the different location of every piece of silicon wafer in flow velocity.Two kinds of nozzles replace jet flow, guarantee that each nozzle can be according to same
One flow supplies medical fluid, prevents from leading to unbalanced or single piece of silicon wafer face of the clearance flow in slot between silicon wafer due to underfed
Interior water-flow equation is inhomogenous, controls the influence at this to minimum.It is combined using different water flows, the whole face of silicon wafer is made all may be used
Sufficiently to be cleaned, amounts of particles is reduced.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (8)
1. utilizing the device of two-period form quartz nozzle cleaning silicon chip, it is characterised in that: including multiple dippers (1), the medical fluid
The bracket base (3) placed side by side for having several to be capable of fixing silicon wafer (4) in slot (1), bracket base (3) lower section are provided with
2 row's wafer center portion washer jets (2) and 2 row's silicon wafer peripheral part washer jets (6).
2. the device according to claim 1 using two-period form quartz nozzle cleaning silicon chip, it is characterised in that: 2 row
Wafer center portion washer jet (2), 1 ranking are ranked in the lower left of bracket base (3), 1 in the lower right of bracket base (3),
And corresponding one group of nozzle between each adjacent two bracket base (3): the nozzle of lower left one and the nozzle of lower right one, two sprays
Against the gap between two neighboring silicon wafer, the water flow that jet expansion sprays rushes at two neighboring silicon wafer centre bit for mouth outlet
It sets.
3. the device according to claim 2 using two-period form quartz nozzle cleaning silicon chip, it is characterised in that: 2 row
Silicon wafer peripheral part washer jet (6) is located at the outside of 2 row's wafer center portion washer jets (2), and each bracket base (3)
Bottom corresponds to one group of nozzle: one nozzle of one nozzle of left bottom and bottom right side, the water flow point that two jet expansions spray
Circumference and right side circumference on the left of silicon wafer are not rushed at.
4. the device according to claim 1 using two-period form quartz nozzle cleaning silicon chip, it is characterised in that: 2 row
Switch valve is provided at the inlet of wafer center portion washer jet (2) and 2 row's silicon wafer peripheral part washer jets (6).
5. two sections of the utilization that the device according to claim 1 to 4 using two-period form quartz nozzle cleaning silicon chip is realized
The method of formula quartz nozzle cleaning silicon chip, it is characterised in that: specific step is as follows:
Step 1: being put into silicon wafer in dipper；
Step 2: closing silicon wafer peripheral part washer jet opens wafer center portion washer jet, wafer center portion washer jet collection
It is middle to spray medical fluid to the central part of silicon wafer, upper up-flow will be formed in the upper direction of dipper at this time, it is different in silicon wafer face
Object, which is driven, to be peeled off as water flow rises to surface and then overflow washes away, and the medical fluid and foreign matter of dipper top outflow are in medicine
The edge of liquid bath flows in the external slot of outer layer, and then sequence enters pipeline, circulating pump, filter and heater, then liquid
It returns again to formation circulation in wafer center portion washer jet；
Step 3: closing wafer center portion washer jet opens silicon wafer peripheral part washer jet, silicon wafer peripheral part washer jet collection
It is middle to spray medical fluid to the peripheral portion of silicon wafer two sides, upper up-flow, silicon chip edge will be formed in the upper direction of dipper at this time
Foreign matter be driven peel off with water flow rise to surface then overflow wash away, dipper top outflow medical fluid and foreign matter
In the external slot that the edge of dipper flows to outer layer, then sequence enters pipeline, circulating pump, filter and heater, then
Liquid is returned again to formation circulation in silicon wafer peripheral part washer jet；
Step 4: alternately step 2 and step 3 is multiple；
Step 5: simultaneously closing off silicon wafer peripheral part washer jet and wafer center portion washer jet, silicon wafer is taken out.
6. the method according to claim 5 using two-period form quartz nozzle cleaning silicon chip, it is characterised in that: step 2 and
Silicon wafer peripheral part washer jet is identical with the flow velocity of wafer center portion washer jet in step 3.
7. the method according to claim 5 using two-period form quartz nozzle cleaning silicon chip, it is characterised in that: step 2 and
The flow velocity of silicon wafer peripheral part washer jet and wafer center portion washer jet is 5mm/sec~20mm/sec in step 3.
8. the method according to claim 5 using two-period form quartz nozzle cleaning silicon chip, it is characterised in that: in step 2
The washing time of each circulation of silicon wafer peripheral part washer jet is 6sec~25sec, wafer center portion washer jet in step 3
The washing time of each circulation is 6sec~25sec.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910490436.6A CN110335835B (en) | 2019-06-06 | 2019-06-06 | Device and method for cleaning silicon wafer by using two-section type quartz nozzle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910490436.6A CN110335835B (en) | 2019-06-06 | 2019-06-06 | Device and method for cleaning silicon wafer by using two-section type quartz nozzle |
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| Publication Number | Publication Date |
|---|---|
| CN110335835A true CN110335835A (en) | 2019-10-15 |
| CN110335835B CN110335835B (en) | 2021-07-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112371612A (en) * | 2020-10-13 | 2021-02-19 | 江苏亚电科技有限公司 | Basket-free wafer cleaning method |
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| US20160329219A1 (en) * | 2015-05-06 | 2016-11-10 | Eun-Seok Lee | Substrate cleaning apparatus |
| CN107799443A (en) * | 2016-09-02 | 2018-03-13 | 株式会社荏原制作所 | Base plate cleaning device and substrate-cleaning method |
| CN108789132A (en) * | 2012-10-02 | 2018-11-13 | 株式会社荏原制作所 | Substrate-cleaning method |
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2019
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| TW201126583A (en) * | 2010-01-28 | 2011-08-01 | United Microelectronics Corp | Method of wafer cleaning and apparatus of wafer cleaning |
| CN108789132A (en) * | 2012-10-02 | 2018-11-13 | 株式会社荏原制作所 | Substrate-cleaning method |
| US20150241786A1 (en) * | 2014-02-25 | 2015-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Tool And Method Of Developing |
| US20160093517A1 (en) * | 2014-09-25 | 2016-03-31 | Tokyo Electron Limited | Substrate liquid processing method, substrate liquid processing apparatus, and recording medium |
| US20160329219A1 (en) * | 2015-05-06 | 2016-11-10 | Eun-Seok Lee | Substrate cleaning apparatus |
| CN205488060U (en) * | 2016-03-04 | 2016-08-17 | 和舰科技(苏州)有限公司 | Wafer cleaning device |
| CN107799443A (en) * | 2016-09-02 | 2018-03-13 | 株式会社荏原制作所 | Base plate cleaning device and substrate-cleaning method |
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| CN112371612A (en) * | 2020-10-13 | 2021-02-19 | 江苏亚电科技有限公司 | Basket-free wafer cleaning method |
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| CN110335835B (en) | 2021-07-16 |
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