CN201532947U - IC and LED lamp packages - Google Patents

IC and LED lamp packages Download PDF

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Publication number
CN201532947U
CN201532947U CN2009202170815U CN200920217081U CN201532947U CN 201532947 U CN201532947 U CN 201532947U CN 2009202170815 U CN2009202170815 U CN 2009202170815U CN 200920217081 U CN200920217081 U CN 200920217081U CN 201532947 U CN201532947 U CN 201532947U
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CN
China
Prior art keywords
silver
led lamp
utility
pin
purity
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Expired - Fee Related
Application number
CN2009202170815U
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Chinese (zh)
Inventor
何守仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DONGGUAN ZHENGQI ELECTRONICS CO LTD
Original Assignee
DONGGUAN ZHENGQI ELECTRONICS CO LTD
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Priority to CN2009202170815U priority Critical patent/CN201532947U/en
Application granted granted Critical
Publication of CN201532947U publication Critical patent/CN201532947U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/4805Shape
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624Aluminium (Al) as principal constituent
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00015Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
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    • H01L2924/012011N purity grades, i.e. 90%
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The utility model discloses an IC and an LED lamp packages with the advantage of cost reduction, wherein the IC package comprises a chip and a pin which are connected through a metal wire, the metal wire adopts silver wire, wherein, the purity of one silver wire ranges from 90 to 95 percent, while that of the other silver wire ranges from 95 to 99 percent. For an IC and an LED lamp packaged by silver wires with the purities, the mechanical property is similar to that of the gold wire, and the binding degree thereof is even higher than the gold wire for the bonding pad of aluminum plating, and the utility model further has the advantages of excellent electric conductivity, suitability for high frequency package and reduced cost.

Description

A kind of IC and the encapsulation of LED lamp
Technical field
The utility model relates to a kind of IC and the encapsulation of LED lamp.
Background technology
Existing IC and LED lamp, its chip all adopts gold thread to be connected with pin, and the gold thread cost is higher than 63 times on silver-colored line and the silver-colored line coefficient of heat conduction is higher than gold thread 34%, and silver-colored line resistance is lower than gold thread 36%, and the collinear footpath silver anti-electric current of line (passing through electric current) is higher than gold thread 15%.
The utility model content
The purpose of this utility model is to disclose a kind of IC and the encapsulation of LED lamp, reduces cost.
IC encapsulation described in the utility model comprises chip and pin, and chip is connected by metal wire with pin, and metal wire is silver-colored line.
Wherein, the purity of silver-colored line is 90-95%.
Wherein, the purity of silver-colored line is 95-99%.
LED lamp encapsulation described in the utility model comprises chip and pin, and chip is connected by metal wire with pin, and metal wire is silver-colored line.
Wherein, the purity of silver-colored line is 90-95%.
Wherein, the purity of silver-colored line is 95-99%.
IC by the encapsulation of certain purity silver line of the present utility model, mechanical performance and gold thread are suitable, and to the weld pad of aluminizing, its conjugation is higher than gold thread, and good conductivity is fit to the high frequency encapsulation, and cost reduces.
Description of drawings
Fig. 1 is the front view of the utility model IC and the encapsulation of LED lamp.
Mark the following drawings mark thereon in conjunction with the accompanying drawings:
The 1-chip, 2-silver line, 3-pin.
Embodiment
Below in conjunction with accompanying drawing, an embodiment of the present utility model is described in detail, but is to be understood that protection range of the present utility model is not subjected to the restriction of embodiment.
As shown in Figure 1, the utility model IC encapsulation comprises chip 1 and pin 3, and the both positive and negative polarity of chip 1 is connected with pin 3 by silver-colored line 2, forms the both positive and negative polarity of pin 3.
Wherein, the purity of silver-colored line is 90-95%.
Perhaps, the purity of silver-colored line is 95-99%.
IC comprises the various IC chips that pass through nation fixed (bonding) encapsulation commonly used.
As shown in Figure 1, LED lamp encapsulation of the present utility model comprises chip and pin, and chip is connected by metal wire with pin, and metal wire is silver-colored line.
Wherein, the purity of silver-colored line is 90-95%.
Wherein, the purity of silver-colored line is 95-99%.
By the IC and the LED lamp of the silver-colored line encapsulation of above-mentioned purity, mechanical performance and gold thread are suitable, and to the weld pad of aluminizing, its conjugation is higher than gold thread, and good conductivity is fit to the high frequency encapsulation, the cost reduction.
More than disclosed only be a specific embodiment of the present utility model, still, the utility model is not limited thereto, any those skilled in the art can think variation all should fall into protection range of the present utility model.

Claims (6)

1. an IC encapsulation comprises chip and pin, it is characterized in that described chip is connected by metal wire with pin, and described metal wire is silver-colored line.
2. IC encapsulation according to claim 1 is characterized in that the purity of described silver-colored line is 90-95%.
3. IC encapsulation according to claim 1 is characterized in that the purity of described silver-colored line is 95-99%.
4. a LED lamp encapsulation comprises chip and pin, it is characterized in that described chip is connected by metal wire with pin, and described metal wire is silver-colored line.
5. LED lamp encapsulation according to claim 4 is characterized in that the purity of described silver-colored line is 90-95%.
6. LED lamp encapsulation according to claim 4 is characterized in that the purity of described silver-colored line is 95-99%.
CN2009202170815U 2009-09-25 2009-09-25 IC and LED lamp packages Expired - Fee Related CN201532947U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009202170815U CN201532947U (en) 2009-09-25 2009-09-25 IC and LED lamp packages

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009202170815U CN201532947U (en) 2009-09-25 2009-09-25 IC and LED lamp packages

Publications (1)

Publication Number Publication Date
CN201532947U true CN201532947U (en) 2010-07-21

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Application Number Title Priority Date Filing Date
CN2009202170815U Expired - Fee Related CN201532947U (en) 2009-09-25 2009-09-25 IC and LED lamp packages

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2757585A3 (en) * 2011-11-21 2014-10-29 Heraeus Materials Technology GmbH & Co. KG Silver bond wire for semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2757585A3 (en) * 2011-11-21 2014-10-29 Heraeus Materials Technology GmbH & Co. KG Silver bond wire for semiconductor devices

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100721

Termination date: 20150925

EXPY Termination of patent right or utility model