CN201780996U - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
- Publication number
- CN201780996U CN201780996U CN2010202725309U CN201020272530U CN201780996U CN 201780996 U CN201780996 U CN 201780996U CN 2010202725309 U CN2010202725309 U CN 2010202725309U CN 201020272530 U CN201020272530 U CN 201020272530U CN 201780996 U CN201780996 U CN 201780996U
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- Prior art keywords
- support
- lead
- led chip
- led
- electrically connected
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Led Device Packages (AREA)
Abstract
The utility model discloses an LED packaging structure, which comprises an LED chip, a first lead, die bonding glue, a support and a second lead. The support is provided with a first end and a second end, a surface electrode of the LED chip is electrically connected with the first end of the support through the first lead, and a bottom electrode of the LED chip is electrically connected with the second end of the support through the die bonding glue and the second lead. The LED packaging structure has the advantages that the bottom electrode of the LED chip is connected with the second end of the support through the second lead, so that the LED chip can be operated normally even if the die bonding glue is separated from the support when the LED chip is in reflow high-temperature assembly, and open circuit is avoided.
Description
Technical field
The utility model relates to LED and makes the field, relates in particular to the encapsulating structure of a kind of LED.
Background technology
In the encapsulating structure of existing LED, the electrode of its led chip has a surface electrode and a bottom electrode, and surface electrode is electrically connected to support one end by lead, and bottom electrode is by on bonding second end that is electrically connected to support of crystal-bonding adhesive.
Bottom electrode only exists following defective: LED by the bonding electrically conducting manner of crystal-bonding adhesive and causes crystal-bonding adhesive and support to peel off easily through the assembling of reflow high temperature the time, and formation is opened circuit.
The utility model content
The technical problem that the utility model mainly solves provides a kind of encapsulating structure of new LED, and it is peeled off with support even crystal-bonding adhesive takes place through the assembling of reflow high temperature the time, and other is electrically connected and is unlikely to formation and opens circuit also can to realize bottom electrode and support.
For solving the problems of the technologies described above, the technical scheme that the utility model adopts is: the encapsulating structure that a kind of LED is provided, comprise led chip, first lead, crystal-bonding adhesive and support, described support has first end and second end, the surface electrode of led chip is electrically connected with first end of support by first lead, the bottom electrode of led chip is electrically connected with second end of support by crystal-bonding adhesive, also comprise second lead, the bottom electrode of described led chip is electrically connected with second end of support by second lead.
The beneficial effects of the utility model are: the LED encapsulating structure that is different from prior art, surface electrode is electrically connected to support first end by first lead, and bottom electrode is electrically connected on the support by crystal-bonding adhesive is bonding, when assembling, cause crystal-bonding adhesive and support to peel off and form the technical problem that opens circuit easily through reflow high temperature, the utility model connects the bottom electrode of LED and second end of support by second lead is set, can make LED the time through the assembling of reflow high temperature, even crystal-bonding adhesive and support take place to be peeled off, LED also can operate as normal, is unlikely to form to open circuit.
Description of drawings
Fig. 1 is the structural representation that the utility model does not have crystal-bonding adhesive embodiment;
Fig. 2 is the structural representation that the utility model has crystal-bonding adhesive embodiment;
Fig. 3 is the led chip electrode structure schematic diagram of the utility model first embodiment;
Fig. 4 is the led chip electrode structure schematic diagram of the utility model second embodiment.
Wherein, 1:LED chip, 2: the first leads, 3: crystal-bonding adhesive, 4: support, 5: the second leads, 6: packing colloid, 11: positive pole, 12: negative pole.
Embodiment
By describing technology contents of the present utility model, structural feature in detail, realized purpose and effect, give explanation below in conjunction with execution mode and conjunction with figs. are detailed.
See also Fig. 1 and Fig. 2, the encapsulating structure of the utility model LED, comprise led chip 1, first lead 2, crystal-bonding adhesive 3 and support 4, described support 4 has first end and second end, the surface electrode of led chip 1 is electrically connected with first end of support 4 by first lead 2, the bottom electrode of led chip 1 is electrically connected with second end of support 4 by crystal-bonding adhesive 3, also comprises second lead 5, and the bottom electrode of led chip is electrically connected with second end of support 4 by second lead 5.
Cooperate Fig. 3, the surface electrode of led chip is a positive pole 11 in first embodiment, and bottom-side electrodes is a negative pole 12.
Cooperate Fig. 4, the surface electrode of led chip is a negative pole 12 in a second embodiment, and bottom-side electrodes is anodal 11.
Be different from the LED encapsulating structure of prior art, surface electrode is electrically connected to support 4 first ends by first lead 2, and bottom electrode is by on bonding second end that is electrically connected to support 4 of crystal-bonding adhesive 3, through the assembling of reflow high temperature the time, cause crystal-bonding adhesive 3 and support 4 to peel off and form the technical problem that opens circuit easily, the utility model connects the bottom electrode of led chip 1 and second end of support 4 by second lead 5 is set, can make LED the time through the assembling of reflow high temperature, even crystal-bonding adhesive 3 takes place to be peeled off with support 4, LED also can operate as normal, is unlikely to form to open circuit.
Because the existence of second lead 5 makes heat resistanceheat resistant performance and the anti-dropping capability of packaged LED all increase.
In order to make win lead 2 and second lead 5 have excellent conducting performance, its material can adopt copper material, silver-colored material or gold copper-base alloy.If less demanding to electric conductivity, first lead 2 and second lead 5 adopt aluminium also can.
Cooperate Fig. 2, for ccontaining packing colloid 6, have groove on support 4, this groove can be trapezoidal, semicircle or other groove shapes.Can packing colloid 6 in groove makes led chip 1, first lead 2, crystal-bonding adhesive 3 and second lead 5 be positioned in described packing colloid 6.
The above only is embodiment of the present utility model; be not so limit claim of the present utility model; every equivalent structure or equivalent flow process conversion that utilizes the utility model specification and accompanying drawing content to be done; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present utility model.
Claims (4)
1. the encapsulating structure of a LED, comprise led chip, first lead, crystal-bonding adhesive and support, described support has first end and second end, the surface electrode of led chip is electrically connected with first end of support by first lead, the bottom electrode of led chip is electrically connected with second end of support by crystal-bonding adhesive, it is characterized in that: also comprise second lead, the bottom electrode of described led chip is electrically connected with second end of support by second lead.
2. the encapsulating structure of LED according to claim 1, it is characterized in that: described lead is copper cash, silver-colored line or gold thread.
3. the encapsulating structure of LED according to claim 2 is characterized in that: have inverted trapezoidal groove on the described support.
4. the encapsulating structure of LED according to claim 3, it is characterized in that: have packing colloid in the described inverted trapezoidal groove, described led chip, first lead, crystal-bonding adhesive and second lead are positioned at described packing colloid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202725309U CN201780996U (en) | 2010-07-27 | 2010-07-27 | LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202725309U CN201780996U (en) | 2010-07-27 | 2010-07-27 | LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201780996U true CN201780996U (en) | 2011-03-30 |
Family
ID=43794201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202725309U Expired - Fee Related CN201780996U (en) | 2010-07-27 | 2010-07-27 | LED packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201780996U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226168A (en) * | 2015-11-02 | 2016-01-06 | 浙江古越龙山电子科技发展有限公司 | The LED of the dead lamp of a kind of not easily moisture absorption and processing method thereof |
| CN111276591A (en) * | 2020-02-18 | 2020-06-12 | 旭宇光电（深圳）股份有限公司 | LED packaging structure and LED die bonding method |
-
2010
- 2010-07-27 CN CN2010202725309U patent/CN201780996U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226168A (en) * | 2015-11-02 | 2016-01-06 | 浙江古越龙山电子科技发展有限公司 | The LED of the dead lamp of a kind of not easily moisture absorption and processing method thereof |
| CN111276591A (en) * | 2020-02-18 | 2020-06-12 | 旭宇光电（深圳）股份有限公司 | LED packaging structure and LED die bonding method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110330 Termination date: 20180727 |