CN201466017U - 超小型微电子电路的平面型载体空腔气密性封装结构 - Google Patents
超小型微电子电路的平面型载体空腔气密性封装结构 Download PDFInfo
- Publication number
- CN201466017U CN201466017U CN 200920074300 CN200920074300U CN201466017U CN 201466017 U CN201466017 U CN 201466017U CN 200920074300 CN200920074300 CN 200920074300 CN 200920074300 U CN200920074300 U CN 200920074300U CN 201466017 U CN201466017 U CN 201466017U
- Authority
- CN
- China
- Prior art keywords
- microelectronic circuit
- carrier
- flat carrier
- lid
- planar carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004377 microelectronic Methods 0.000 title claims abstract description 35
- 239000000565 sealant Substances 0.000 claims abstract description 20
- 238000003466 welding Methods 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000012530 fluid Substances 0.000 claims description 18
- 238000004806 packaging method and process Methods 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 abstract description 17
- 238000005516 engineering process Methods 0.000 description 9
- 239000004033 plastic Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000012536 packaging technology Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Landscapes
- Micromachines (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200920074300 CN201466017U (zh) | 2009-07-21 | 2009-07-21 | 超小型微电子电路的平面型载体空腔气密性封装结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200920074300 CN201466017U (zh) | 2009-07-21 | 2009-07-21 | 超小型微电子电路的平面型载体空腔气密性封装结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN201466017U true CN201466017U (zh) | 2010-05-12 |
Family
ID=42393365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200920074300 Expired - Lifetime CN201466017U (zh) | 2009-07-21 | 2009-07-21 | 超小型微电子电路的平面型载体空腔气密性封装结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN201466017U (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103928432A (zh) * | 2013-01-14 | 2014-07-16 | 内蒙航天动力机械测试所 | 一种表贴半导体元件气密封装结构 |
CN107782767A (zh) * | 2016-08-26 | 2018-03-09 | 深迪半导体(上海)有限公司 | 一种气体传感器加热盘及加工方法 |
-
2009
- 2009-07-21 CN CN 200920074300 patent/CN201466017U/zh not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103928432A (zh) * | 2013-01-14 | 2014-07-16 | 内蒙航天动力机械测试所 | 一种表贴半导体元件气密封装结构 |
CN103928432B (zh) * | 2013-01-14 | 2016-09-28 | 内蒙航天动力机械测试所 | 一种表贴半导体元件气密封装结构 |
CN107782767A (zh) * | 2016-08-26 | 2018-03-09 | 深迪半导体(上海)有限公司 | 一种气体传感器加热盘及加工方法 |
CN107782767B (zh) * | 2016-08-26 | 2022-01-07 | 深迪半导体(绍兴)有限公司 | 一种气体传感器加热盘及加工方法 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: 201203 Shanghai City Chenhui Road, Zhangjiang hi tech Park No. 88 Building No. 1 room 307 Patentee after: Senodia Semiconductor (Shanghai) Co., Ltd. Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Cailun Road No. 2 building 302 room 1690 Patentee before: Senodia Semiconductor (Shanghai) Co., Ltd. |
|
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Danyang deep well Microelectronics Technology Co., Ltd. Assignor: Senodia Semiconductor (Shanghai) Co., Ltd. Contract record no.: 2012320000413 Denomination of utility model: Planar carrier cavity hermetic encapsulating structure of ultraminiature microelectronic circuit Granted publication date: 20100512 License type: Common License Record date: 20120406 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Planar carrier cavity hermetic encapsulating structure of ultraminiature microelectronic circuit Effective date of registration: 20140108 Granted publication date: 20100512 Pledgee: Bank of Beijing, Limited by Share Ltd, Shanghai branch Pledgor: Senodia Semiconductor (Shanghai) Co., Ltd. Registration number: 2014310000001 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20140808 Granted publication date: 20100512 Pledgee: Bank of Beijing, Limited by Share Ltd, Shanghai branch Pledgor: Senodia Semiconductor (Shanghai) Co., Ltd. Registration number: 2014310000001 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
DD01 | Delivery of document by public notice | ||
DD01 | Delivery of document by public notice |
Addressee: Senodia Semiconductor (Shanghai) Co., Ltd. Document name: Notification of Passing Examination on Formalities |
|
CX01 | Expiry of patent term |
Granted publication date: 20100512 |
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CX01 | Expiry of patent term |