CN201440425U - Improved structure of light emitting diode bracket - Google Patents
Improved structure of light emitting diode bracket Download PDFInfo
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- CN201440425U CN201440425U CN2009201505614U CN200920150561U CN201440425U CN 201440425 U CN201440425 U CN 201440425U CN 2009201505614 U CN2009201505614 U CN 2009201505614U CN 200920150561 U CN200920150561 U CN 200920150561U CN 201440425 U CN201440425 U CN 201440425U
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- support
- extension
- emitting diode
- light
- top ends
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Abstract
The utility model relates to an improved structure of a light emitting diode bracket. The edge of an extension part of the bracket is provided with a discontinuous obstruct section, and siphon phenomena generated on the edge of the extension part by encapsulation colloid can be controlled to only occur in the discontinuous obstruct section, therefore, the technical efficacy that the occurrence of the siphon phenomena is controlled to prevent oversize change of the size of the encapsulation colloid is achieved.
Description
Technical field
A kind of light-emitting diode support structure refers in particular to a kind of edge in support the light-emitting diode support structure of the obstruct section of discontinuous with the control siphonage is set.
Background technology
In recent years, because light-emitting diode (Light Emitting Diode, LED) have that power consumption is low, component life is long, need not warm up advantages such as lamp time and reaction speed be fast, add that its volume is little, vibration resistance, be fit to volume production, therefore light-emitting diode generally is used on the indicator light and display unit of information, communication and consumption electronic products, as mobile phone and personal digital assistant (Personal Digital Assistant, PDA) screen backlight source, various outdoor display, traffic lights and car light etc.
Below a kind of light-emitting diode support structure will be described, and please refer to shown in " Fig. 1 " that " Fig. 1 " illustrates the schematic perspective view into existing light-emitting diode support structure; Existing light-emitting diode support structure includes: first support 51 and second support, 52, the first supports 51 include first top ends 511 and first extension, 512, the second supports 52 include second top ends 521 and second extension 522.
Therefore, please refer to shown in " Fig. 2 ", " Fig. 2 " illustrates the schematic perspective view into existing light-emitting diode support structure improvement; The trickle burr that produced for second extension, 522 edges of first extension 512 of eliminating first support 51 and second support 52, when making light-emitting diode support structure, then need to increase flattening course, the trickle burr that second extension, 522 edges of first extension 512 of place first support 51 and second support 52 are produced when using the elimination punching press.
Flattening course is at second extension, 522 edges of first extension 512 of first support 51 and second support 52 and forms chamfering 54; promptly can eliminate the trickle burr that second extension, 522 edges of first extension 512 of first support 51 and second support 52 are produced by the formed chamfering 54 of flattening course; when again first support 51 and second support 52 being encapsulated by packing colloid; because need be with first top ends 511 and first extension, 512 parts of first support 51; and second top ends 521 of second support 52 and second extension, 522 parts; be inserted in the liquid packing colloid in the mode of falling to insert; after packing colloid solidifies; can be with first top ends 511 and first extension, 512 parts of first support 51; and second top ends 521 of second support 52 and first extension, 512 parts are packaged in packing colloid, and light-emitting diode chip for backlight unit 53 is formed protection.
Yet; because second extension, the 522 process chamferings 54 that flattening course produced of first extension 512 of first support 51 and second support 52; when first support 51 and second support 52 are carried out encapsulation process; liquid packing colloid then can be owing to chamfering 54 siphonage that produces; promptly can make the size of packing colloid after solidifying to change, more likely can't form protection light-emitting diode chip for backlight unit 53.
In sum; prior art has existed light-emitting diode support structure behind the process flattening course always since the midium or long term as can be known; the siphonage that produces and cause the packing colloid size to change and can't form the problem of protection to light-emitting diode chip for backlight unit; therefore be necessary to propose improved technological means, solve this problem.
The utility model content
Because prior art exists light-emitting diode support structure behind the process flattening course; the siphonage that produces and cause the packing colloid size to change and can't form the problem of protection to light-emitting diode chip for backlight unit; the utility model discloses a kind of LED support structure-improved then, wherein:
The LED support structure-improved that the utility model disclosed, it comprises: first support and second support, first support include first top ends and first extension, and second support includes second top ends and second extension.
Wherein, first extension extends downwards from first top ends, and first top ends is provided with the depressed part of indent, and depressed part is used for affixed light-emitting diode chip for backlight unit, and the edge of first extension is concaved with at least one obstruct section; Second extension extends downwards from second top ends, and second top ends and light-emitting diode chip for backlight unit form and electrically connect, and the edge of second extension is concaved with at least one obstruct section.
And be to form disjunct chamfering by edge at first extension and second extension at the obstruct section that first extension and second extension are arranged with, the section length that intercepts section can be random length or fixed numeric values, and intercept the edge that section can be evenly distributed in first extension and second extension, or intercept the edge that section can be allocated in first extension and second extension arbitrarily.
The section of depressed part is that one of them is arranged at the top ends of first support with semicircular in shape or V-type shape, and when the section of depressed part presents the V-type shape, the angle of offering of depressed part opening is an an angle of 90 degrees, light that light-emitting diode chip for backlight unit the produced reflecting surface by depressed part can be reflected by this, make its light source that presents approximate directional light, use the luminosity that improves light-emitting diode chip for backlight unit.
And the LED support structure-improved more can comprise packing colloid, is used to be coated on first top ends and second top ends, and partly is coated on first extension and second extension, uses that light-emitting diode chip for backlight unit is formed protection.
The structure that the utility model disclosed as above; and the difference between the prior art be the utility model at the second extension edge of first extension of first support and second support flattening course by discontinuous; form the obstruct section of at least one depression with the second extension edge at first extension of first support and second support; promptly form disjunct chamfering at first extension of first support and the second extension edge of second support; liquid packing colloid only can produce siphonage in intercepting section; can effectively control siphonage by this takes place; and can not allow the size of packing colloid after solidifying produce too big variation, promptly can effectively protect light-emitting diode chip for backlight unit.
By above-mentioned technological means, the utility model can be reached the control siphonage and take place to prevent that the packing colloid size from producing the technology effect of too big variation.
Description of drawings
Fig. 1 illustrates the schematic perspective view into existing light-emitting diode support structure;
Fig. 2 illustrates the schematic perspective view into existing light-emitting diode support structure improvement;
Fig. 3 illustrates the schematic perspective view into the utility model LED support structure-improved;
Fig. 4 A illustrates by the utility model LED support structure-improved punching press and is formed at the generalized section that first support and the second support burr are untreated;
Fig. 4 B illustrate into the utility model LED support structure-improved through between first support and the second support generalized section behind the segmentation flattening course;
Fig. 5 A illustrates and is existing light-emitting diode support structure first support and first extension of second support and the schematic perspective view of second extension;
Fig. 5 B illustrates and is first extension of the utility model LED support structure-improved first support and second support and the schematic perspective view of second extension;
Fig. 6 A illustrates the generalized section into the depressed part semicircular in shape of the utility model LED support structure-improved;
Fig. 6 B illustrates the generalized section into the depressed part V-type shape of the utility model LED support structure-improved;
Fig. 7 illustrate into encapsulation first support of the utility model LED support structure-improved and second support in the packing colloid schematic perspective view.
Embodiment
Below will cooperate graphic and embodiment to describe the execution mode of the utility model in detail, by this to the utility model how the application technology means implementation procedure that solves technical problem and reach the technology effect can fully understand and implement according to this.
Below the LED support structure-improved that the utility model discloses will be described, and please refer to shown in " Fig. 3 " that " Fig. 3 " illustrates the schematic perspective view into the utility model LED support structure-improved.
Structure improved first support 10 of the LED support that the utility model disclosed and second support 20, with conduction and thermal conductivity good metal material and by punching press (stamping) mode, to form first support 10 and second support 20 of the equidistant arrangement of plural groups, among the figure only with single group first support 10 and second support 20 as illustrating, do not illustrate first support 10 and second support 20 into the equidistant arrangement of plural groups, at this only for illustrating, do not limit to application category of the present utility model with this, and first support 10 includes first top ends 11 and first extension, 12, the second supports 20 include second top ends 21 and second extension 22.
Wherein, first extension 12 extends downwards from first top ends 11, and first top ends 11 is provided with the depressed part 13 of indent, and depressed part 13 is to be used for affixed light-emitting diode chip for backlight unit 14, and the edge of first extension 12 is concaved with at least one obstruct section 41; Second extension 22 extends downwards from second top ends 21, and second top ends 21 forms with light-emitting diode chip for backlight unit 14 and electrically connects, and the edge of second extension 22 is concaved with at least one obstruct section 41.
Then, please refer to shown in " Fig. 4 A ", " Fig. 4 A " illustrates by the utility model LED support structure-improved punching press and is formed at the generalized section that first support and the second support burr are untreated.
Because first support 10 (please refer to shown in " Fig. 3 ") and second support 20 (please refer to shown in " Fig. 3 ") are formed by impact style, after punching press forms first support 10 and second support 20, can produce trickle burr 42 at the edge of first extension 12 (please refer to shown in " Fig. 3 ") and second extension 22 (please refer to shown in " Fig. 3 ") (shown in " Fig. 4 A ", for strengthening hint effect, show at the trickle burr 42 of the edge of first extension 12 and second extension 22 generation in remarkable mode among the figure), the burr that first extension 12 and second extension, 22 edges are produced, except the outward appearance of first support 10 and second support 20 can seem not attractive in appearance, the more important thing is the size that can have influence on first support 10 and second support 20.
Therefore, please also refer to shown in " Fig. 2 " and " Fig. 5 A ", " Fig. 5 A " illustrates and is existing light-emitting diode support structure first support and first extension of second support and the schematic perspective view of second extension.
For the above-mentioned problem that produces, then the burr that need be produced at second extension, 522 edges of first extension 512 of first support 51 and second support 52 carry out flattening course, flattening course is at second extension, 522 edges of first extension 512 of first support 51 and second support 52 and forms chamfering 54, burr that produced with second extension, 522 edges of first extension 512 of eliminating first support 51 and second support 52 by this, and the outward appearance that makes first support 51 and second support 52 become attractive in appearance outside, the more important thing is the size of keeping first support 51 and second support 52.
But, carry out flattening course at first extension 512 of first support 51 and second extension, 522 edges of second support 52, and when first support 51 and second support 52 are encapsulated by packing colloid (not illustrating among the figure), procedural mode is for being liquid with the packing colloid fusion and inserting in the mould herein, again with first top ends 511 of first support 51 and first extension, 512 parts of first support 51, and second extension, 522 parts of second top ends 521 of second support 52 and second support 52, be inserted in the liquid packing colloid in the mode of falling to insert.
At this moment; because first extension 512 of first support 51 and second extension, 522 edges of second support 20 have passed through flattening course; the chamfering 54 that first extension 512 that the liquid packing colloid of this moment promptly can be by first support 51 and second extension, 522 flattening courses of second support 20 are produced produces siphonage; promptly can make the size of packing colloid after solidifying to change, more likely can't form protection light-emitting diode chip for backlight unit 53.
Therefore, please be simultaneously with reference to " Fig. 4 B " and cooperate shown in " Fig. 5 B ", " Fig. 4 B " illustrate into the utility model LED support structure-improved through between first support and the second support generalized section behind the segmentation flattening course; " Fig. 5 B " illustrates and is first extension of the utility model LED support structure-improved first support and second support and the schematic perspective view of second extension.
Because above-mentioned problem, therefore, the utility model is in second extension 22 (please refer to shown in " Fig. 3 ") of first extension 12 (please refer to shown in " Fig. 3 ") of first support 10 and second support 20 when the edge carries out flattening course, first extension 12 of first support 10 and first extension, 12 edges of second support 20 are not carried out whole flattening course, but the flattening course by discontinuous, form the obstruct section 41 of at least one depression with second extension, 22 edges, be at first extension 12 of first support 10 and second extension, 22 edges of second support 20 and form disjunct chamfering 43 at first extension 12 of first support 10 and second support 20.
By at first extension 12 of first support 10 and the formed obstruct section 41 in second extension, 22 edges of second support 20; when the mode that first support 10 and second support 20 are fallen to insert is inserted in liquid packing colloid (not illustrating among the figure); liquid packing colloid only can produce siphonage in intercepting section 41; promptly can effectively control siphonage takes place; and can not allow the size of packing colloid after solidifying produce too big variation, can effectively protect light-emitting diode chip for backlight unit 14 (please refer to shown in " Fig. 3 ").
Please be simultaneously with reference to shown in " Fig. 5 A " and " Fig. 5 B "; promptly can significantly find out; existing flattening course is the leveling of second extension 522 (please refer to shown in " Fig. 2 ") edge of first extension 512 (please refer to shown in " Fig. 2 ") of first support 51 and second support 52 being carried out integral body; and the utility model is that first extension 12 (please refer to shown in " Fig. 3 ") of first support 10 and second extension 22 (please refer to shown in " Fig. 3 ") edge of second support 20 are carried out the leveling of a segmentation; the siphonage that liquid packing colloid produced can be controlled in by this in the obstruct section 41 (please refer to shown in " Fig. 3 "), can effectively protect light-emitting diode chip for backlight unit 14 (please refer to shown in " Fig. 3 ").
Please referring again to shown in " Fig. 3 ", what deserves to be mentioned is, the obstruct section 41 that forms at the edge of first support 10 and second support 20, the section length that intercepts section 41 can be random length or fixed numeric values, this is can control the section that siphonage takes place, and can extrapolate the difference of the size of packing colloid 30 after solidifying.
In addition, distribution between obstruct section 41 and the obstruct section 41 can be evenly distributed in the edge of first support 10 and second support 20, or intercept the edge that section 41 can be allocated in first support 10 and second support 20 arbitrarily, this also is to control the section that siphonage takes place, and can extrapolate the difference of the size of packing colloid 30 after solidifying.
And conduction and the thermal conductivity good metal material of making first support 10 and second support 20 can be copper, iron or other conductivity and good metallic plate or the alloy sheets of thermal conductivity.That is to say that the material of first support 10 and second support 20 can be copper, iron or other conductions and thermal conductivity and the good metal or alloy of thermal conductivity.
And first top ends 11 at first support 10 is provided with the depressed part 13 that caves inward, forming around the depressed part 13 can be for the reflecting surface 15 of light reflection, bottom at first top ends, the 11 set depressed parts 13 of first support 10 is to be used for affixed light-emitting diode chip for backlight unit 14, and the reflecting surface 15 of depressed part 13 is to be used for the light that light-emitting diode chip for backlight unit 14 is produced is reflected, reflecting surface 15 reflection rays by depressed part 13 can be concentrated the light of light-emitting diode chip for backlight unit 14, can increase the luminosity of light-emitting diode chip for backlight unit 14 by this.
Then, first top ends, the 11 set depressed parts that cave inward 13 of first support 10, please refer to shown in " Fig. 6 A " and " Fig. 6 B ", " Fig. 6 A " illustrates the generalized section into the depressed part semicircular in shape of the utility model LED support structure-improved; " Fig. 6 B " illustrates the generalized section into the depressed part V-type shape of the utility model LED support structure-improved.
The section of the set depressed part that caves inward 13 of first top ends 11 (shown in " Fig. 3 ") of first support 10 (shown in " Fig. 3 ") can present semicircular shape (shown in " Fig. 6 A ") or V-type shape (shown in " Fig. 6 B ") one of them, form the reflecting surface 15 of depressed part 13 by this, so that the reflection of light-emitting diode chip for backlight unit 14 (shown in " Fig. 3 ") light that produced to be provided, and when the section of depressed part 13 presents the V-type shape, the angle [alpha] that opening is offered of depressed part 13 is an an angle of 90 degrees, in the time of can presenting semicircular shape with the section of depressed part 13 by this, the light that light-emitting diode chip for backlight unit 14 is produced reflects by the reflecting surface 15 of depressed part 13, make its light source that presents approximate directional light, use the luminosity that improves light-emitting diode chip for backlight unit.
Please refer again to shown in " Fig. 3 ", second top ends 21 of second support 20 is to form electric connection with the light-emitting diode chip for backlight unit 14 that is fixed on first support 10, in general, second support 20 is formed electric connection with the electric connection that is fixed in light-emitting diode chip for backlight unit 14 on first support 10 by routing joining technique (wire bonding), shown in " Fig. 3 ", only for illustrating, do not limit to application category of the present utility model at this with this.
Promptly can provide light-emitting diode chip for backlight unit 14 needed electrical polarity respectively by first support 10 and second support 20, and first support 10 and second support 20 can also be provided as to form with other electronic installations (not illustrating in graphic) and electrically connect and be fixed on other electronic installations.
In addition, please refer to shown in " Fig. 7 ", " Fig. 7 " illustrate into encapsulation first support of the utility model LED support structure-improved and second support in the packing colloid schematic perspective view.
The LED support structure-improved more can comprise packing colloid 30; dotted portion is packing colloid 30 among the figure; packing colloid 30 is first extension, 12 parts with first top ends 11 of first support 10 and first support 10; and second extension, 22 parts of second top ends 21 of second support 20 and second support 20 coat; be coated on first top ends 11 of first support 10 and first extension, 12 parts of first support 10 by packing colloid 30; and second extension, 22 parts of second top ends 21 of second support 20 and second support 20; promptly can form protection to the light-emitting diode chip for backlight unit 14 that is fixed in the depressed part 13, its encapsulated result please refer to shown in " Fig. 7 ".
In addition, can be mixed with phosphor powder 31 in the packing colloid 30, therefore when irradiate light that light-emitting diode chip for backlight unit 14 sent makes its visible light that inspires another kind of color to phosphor powder, the light that light-emitting diode chip for backlight unit 14 is sent can mix with the light that phosphor powder is ejected and produce the mixed light effect, uses the light that produces different colours.
In sum; as can be known the difference between the utility model and the prior art at the second extension edge of first extension of first support and second support by the flattening course of discontinuous; form the obstruct section of at least one depression with the second extension edge at first extension of first support and second support; promptly form disjunct chamfering at first extension of first support and the second extension edge of second support; liquid packing colloid only can produce siphonage in intercepting section; can effectively control siphonage by this takes place; and can not allow the size of packing colloid after solidifying produce too big variation, promptly can effectively protect light-emitting diode chip for backlight unit.
Can solve the existing light-emitting diode support structure of prior art behind the process flattening course by this technological means; the siphonage that produces and cause the packing colloid size to change and can't form the problem of protection to light-emitting diode chip for backlight unit, and then reach the control siphonage and take place to prevent that the packing colloid size from producing the technology effect of too big variation.
Though the execution mode that the utility model disclosed as above, holding within thought is described is not the scope of patent protection that is used for directly limiting the utility model.Have in the technical field under any the utility model and know the knowledgeable usually, under the prerequisite of the spirit and scope that do not break away from the utility model and disclosed, can do a little change reaching on the details of implementing in form.The scope of patent protection of the utility model, still must with appended claim the person of being defined be as the criterion.
Claims (7)
1. a LED support structure-improved is characterized in that, comprises:
One first support, include one first top ends and one first extension, this first extension extends downwards from this first top ends, this first top ends is provided with one of indent depressed part, this depressed part is to be used for an affixed light-emitting diode chip for backlight unit, and the edge of this first extension is concaved with at least one obstruct section; And
One second support, include one second top ends and one second extension, this second extension extends downwards from this second top ends, and this second top ends and this light-emitting diode form and electrically connect, and the edge of this second extension is concaved with at least one obstruct section.
2. LED support structure-improved as claimed in claim 1 is characterized in that, the section of this depressed part is to present semicircular in shape or V-type shape.
3. LED support structure-improved as claimed in claim 2 is characterized in that, when the section of this depressed part presented the V-type shape, the angle of offering was an an angle of 90 degrees.
4. LED support structure-improved as claimed in claim 1 is characterized in that, those intercept section is to form chamfering with the edge in this first extension and this second extension.
5. LED support structure-improved as claimed in claim 1 is characterized in that, those section length that intercept section are fixed numbers.
6. LED support structure-improved as claimed in claim 1 is characterized in that, those intercept section is the edge that is evenly distributed in this first extension and this second extension.
7. LED support structure-improved as claimed in claim 1, it is characterized in that, this LED support structure-improved more comprises a packing colloid, is used to be coated on this first top ends and this second top ends, and part is coated on this first extension and this second extension.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201505614U CN201440425U (en) | 2009-05-07 | 2009-05-07 | Improved structure of light emitting diode bracket |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201505614U CN201440425U (en) | 2009-05-07 | 2009-05-07 | Improved structure of light emitting diode bracket |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201440425U true CN201440425U (en) | 2010-04-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201505614U Expired - Fee Related CN201440425U (en) | 2009-05-07 | 2009-05-07 | Improved structure of light emitting diode bracket |
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|---|---|
| CN (1) | CN201440425U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683316A (en) * | 2011-03-09 | 2012-09-19 | 斯坦雷电气株式会社 | Semiconductor device and manufacture method thereof |
-
2009
- 2009-05-07 CN CN2009201505614U patent/CN201440425U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683316A (en) * | 2011-03-09 | 2012-09-19 | 斯坦雷电气株式会社 | Semiconductor device and manufacture method thereof |
| CN102683316B (en) * | 2011-03-09 | 2016-06-08 | 斯坦雷电气株式会社 | Optical semiconductor device and manufacture method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: I-CHIUN PRECISION ELECTRIC INDUSTRY (CHINA) CO., L Free format text: FORMER OWNER: I-CHIUN PRECISION INDUSTRY CO., LTD. Effective date: 20120111 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TAIWAN, CHINA TO: 215343 SUZHOU, JIANGSU PROVINCE |
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| TR01 | Transfer of patent right |
Effective date of registration: 20120111 Address after: 215343 Jiangsu province Kunshan City Qiandeng Town Shipu Songnan Road No. 2 Patentee after: I-Chiun Precision Electric Industry (China) Co., Ltd., Address before: Taiwan County, Taipei, China Patentee before: I-Chiun Precision Industry Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100421 Termination date: 20170507 |
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| CF01 | Termination of patent right due to non-payment of annual fee |