CN102683316B - Optical semiconductor device and manufacture method thereof - Google Patents
Optical semiconductor device and manufacture method thereof Download PDFInfo
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- CN102683316B CN102683316B CN201210062315.XA CN201210062315A CN102683316B CN 102683316 B CN102683316 B CN 102683316B CN 201210062315 A CN201210062315 A CN 201210062315A CN 102683316 B CN102683316 B CN 102683316B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The present invention provides a kind of optical semiconductor device and manufacture method thereof. Can when need not at substantial cost and when labor force, prevent the protuberance of resin in wire portion (wire frame). As solution means, optical semiconductor device have optical semiconductor (1), for setting this optical semiconductor (1) wire frame (2,2), cover above-mentioned optical semiconductor (1) and the above-mentioned optical semiconductor of above-mentioned wire frame (2,2) arranges the sealing resin section (3) of end of side, the region that above-mentioned wire frame (2,2) is arranged in the opposition side that above-mentioned optical semiconductor arranges side compared with the bottom surface of above-mentioned sealing resin section (3) (3a) has overlap reversion region (4).
Description
Technical field
The present invention relates to optical semiconductor device and manufacture method thereof.
Background technology
In the manufacturing process of the optical semiconductor devices such as LED, semiconductor laser, light device, usually the compacting die-cut wire frame of steel plate is used, then optical semiconductor is set on wire frame, then carries out using the operation of a part for resin seal optical semiconductor and above-mentioned wire frame.
In this kind of manufacturing process, when the die-cut wire frame of use compacting steel plate, rising in film portion towards die-cut direction generation overlap, in the operation of a part using resin to come encapsulating optical semiconductor element and above-mentioned wire frame, being transmitted in the overlap resulting from die-cut portion by the surface tension of resin and swell in wire frame, in wire frame, the resin of protuberance produces to hinder the problem of the wettability with the solder for being installed on installation base plate sometimes.
Namely, from resin injection operation to the time of hardening of resin operation according to the operation of batch processing, the timing of resin injection and different, more long to the time of hardening of resin operation from resin injection operation, then resin more can transmit in the overlap resulting from die-cut portion due to its surface tension and swell at wire portion. If hardening in this state, then can damage the solder wetting of wire portion.
The technology preventing this kind of resin protuberance is proposed at patent documentation 1, patent documentation 2.
That is, in patent documentation 1, before sealing resin heat hardening, the sealing resin adjacent area on wire frame surface is implemented the coating of parting agent, prevents resin from swelling.
In addition, in patent documentation 2, press tool is utilized to carry out the overshooting shape overlap part produced when the Punching Technology of wire frame adding processing, to make it become smooth as object welding region, and matt plating is implemented on lead electrode surface, thus prevent the protuberance of resin.
[patent documentation 1] Japanese Laid-Open Patent Publication 63-086484 publication
[patent documentation 2] Japanese Unexamined Patent Publication 2001-230453 publication
But in patent documentation 1, it is difficult to implement uniform coating with being confirmed whether all-the-time stable, the part depending on operator's technical ability is more, thus there is the problem expending handling cost.
In addition, in patent documentation 2, except common die cutting die, in addition it is also necessary to there is the press tool of the high precision of complicated formation, there is the problem that initial cost raises.
Summary of the invention
It is an object of the invention to provide a kind of can when need not at substantial cost and when labor force, prevent optical semiconductor device and the manufacture method thereof of the protuberance of the resin in wire portion (wire frame).
In order to reach above-mentioned purpose, first aspect present invention provides a kind of optical semiconductor device, and it has: optical semiconductor, for setting the wire frame of this optical semiconductor, the above-mentioned optical semiconductor covering above-mentioned optical semiconductor and above-mentioned wire frame arranges the sealing resin section of the end of side, it is characterized in that, above-mentioned wire frame from above-mentioned sealing resin section in the part being exposed to above-mentioned sealing resin section, respectively any one face in relative face has overlap facing one direction, the face relative with an above-mentioned direction is smooth, above-mentioned wire frame has overlap reversion region in the region being positioned at the opposition side that above-mentioned optical semiconductor arranges side compared with the bottom surface of above-mentioned sealing resin section, above-mentioned overlap reversion region has overlap on the face relative with an above-mentioned direction, and the face in an above-mentioned direction is smooth.
In addition, second aspect present invention is according to first aspect, it is characterized in that, above-mentioned optical semiconductor device also has cover portion, this cover portion surrounds above-mentioned sealing resin section, arranging the opposition side of side to above-mentioned optical semiconductor compared with the bottom surface of above-mentioned sealing resin section at least partially outstanding, the end that the above-mentioned optical semiconductor in above-mentioned overlap reversion region arranges side is arranged at above-mentioned sealing resin section side compared with the minimum bottom surface in above-mentioned cover portion.
In addition, third aspect present invention provides the manufacture method of a kind of optical semiconductor device, it is characterised in that, have: the 1st die-cut operation, in the way of at least remaining overlap reversion union lever, cut out wire frame from a direction from compacting steel plate stamping; 2nd die-cut operation, for having carried out the above-mentioned wire frame after the 1st die-cut operation, carries out die-cut from the direction contrary with above-mentioned 1st die-cut operation to above-mentioned overlap reversion union lever, arranges overlap reversion region on above-mentioned wire frame; The operation of optical semiconductor is set in an end of above-mentioned wire frame; And so that the mode that above-mentioned overlap reversion region is exposed uses the operation of an end of the above-mentioned optical semiconductor of resin seal and above-mentioned wire frame.
According to a first aspect of the present invention, invention described in second aspect, optical semiconductor device has: optical semiconductor; For setting the wire frame of this optical semiconductor; The above-mentioned optical semiconductor covering above-mentioned optical semiconductor and above-mentioned wire frame arranges the sealing resin section of the end of side, above-mentioned wire frame has overlap reversion region in the region being positioned at the opposition side that above-mentioned optical semiconductor arranges side compared with the bottom surface of above-mentioned sealing resin section, therefore, it is possible to when need not at substantial cost and when labor force, prevent the protuberance of the resin in wire portion (wire frame).
In addition, according to a third aspect of the present invention, the manufacture method of optical semiconductor device has: the 1st die-cut operation, in the way of at least remaining overlap reversion union lever, cuts out wire frame from a direction from compacting steel plate stamping; 2nd die-cut operation, for having carried out the above-mentioned wire frame after the 1st die-cut operation, carries out die-cut from the direction contrary with above-mentioned 1st die-cut operation to above-mentioned overlap reversion union lever, arranges overlap reversion region on above-mentioned wire frame; The operation of optical semiconductor is set in an end of above-mentioned wire frame;And so that the mode that above-mentioned overlap reversion region is exposed uses the operation of an end of the above-mentioned optical semiconductor of resin seal and above-mentioned wire frame, therefore, it is possible to when need not at substantial cost and when labor force, prevent the protuberance of the resin in wire portion (wire frame).
Accompanying drawing explanation
Fig. 1 represents the figure of a configuration example of the optical semiconductor device of the present invention.
Fig. 2 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 1.
Fig. 3 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 1.
Fig. 4 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 1.
Fig. 5 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 1.
Fig. 6 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 1.
Fig. 7 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 1.
Fig. 8 is the figure of other configuration examples of the optical semiconductor device representing the present invention.
Fig. 9 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 8.
Figure 10 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 8.
Figure 11 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 8.
Figure 12 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 8.
Figure 13 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 8.
Figure 14 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 8.
Figure 15 is the figure of manufacturing process's example of the optical semiconductor device representing Fig. 8.
Figure 16 is the figure representing the cover portion (resin-case) before insertion wire frame.
Label explanation
1 optical semiconductor; 2 wire frames; 3 sealing resin section; 4 overlap reversion regions; 6,7 overlap; 9 silk threads; 14 overlap reversion union levers; 15 posture maintenance union levers; 21 optical semiconductors; 22,32 wire frame; 23 sealing resin section; 24 overlap reversion regions; 26,27 overlap; 29 silk threads; 34 cover portions (resin-case); 44 overlap reversion union levers; 45 posture maintenance union levers; 10,40 optical semiconductor device.
Embodiment
Embodiments of the present invention are described below with reference to the accompanying drawings.
Fig. 1 (a), (b) are the figure of a configuration example of the optical semiconductor device representing the present invention. And Fig. 1 (a) is front view, Fig. 1 (b) is side-view. With reference to Fig. 1 (a), (b), this optical semiconductor device 10 have optical semiconductor 1, any one party be provided with above-mentioned optical semiconductor 1 couple of conductor frame 2,2, the above-mentioned optical semiconductor that covers above-mentioned optical semiconductor 1 and above-mentioned couple of conductor frame 2,2 sealing resin section 3 of end of side is set.
And couple of conductor frame 2,2 has overlap reversion region 4 in the region (region namely not sealed by resin) being positioned at the opposition side that above-mentioned optical semiconductor arranges side compared with the bottom surface 3a of sealing resin section 3. Wire frame 2,2 has overlap in any one party in relative face respectively, and another side becomes tabular surface, and reverses in region 4 at overlap, and the face with overlap is the face different from other regions with tabular surface. And in Fig. 1 (b), symbol 3b is the protuberance portion of sealing resin section 3, and symbol 6,7 is overlap, and symbol 9 is silk thread.
Fig. 2 (a), (b), Fig. 3 (a), (b), Fig. 4 (a), (b), Fig. 5 (a), (b), Fig. 6 (a), (b), Fig. 7 (a), (b) are the figure of manufacturing process's example of the optical semiconductor device representing Fig. 1 (a), (b). And, Fig. 2 (a), Fig. 3 (a), Fig. 4 (a), Fig. 5 (a), Fig. 6 (a), Fig. 7 (a) are front views, and Fig. 2 (b), Fig. 3 (b), Fig. 4 (b), Fig. 5 (b), Fig. 6 (b), Fig. 7 (b) are side-views.
When the optical semiconductor device of construction drawing 1 (a), (b), first, as shown in Fig. 2 (a), (b), in the way of remaining posture maintenance union lever 15 and overlap reversion union lever 14, wire frame 2 (the 1st die-cut operation) is punched out from compacting steel plate towards a direction (such as pressing the direction of paper). As shown in Fig. 2 (b), by the 1st die-cut operation, the residual posture maintenance part of union lever 15 and overlap reversion union lever 14, produces the overlap 6 of D1 facing one direction in wire frame 2.
Then, as shown in Fig. 3 (a), (b), for the wire frame 2 of the state that have passed through the Fig. 2 (a) after the 1st die-cut operation, (b), from the direction contrary with above-mentioned 1st die-cut operation (such as paper to prescription before root to), above-mentioned overlap reversion union lever 14 is carried out die-cut, wire frame 2 arranges overlap reversion region 4 (the 2nd die-cut operation). Namely, by the 2nd die-cut operation, as shown in Fig. 3 (b), produce the overlap 7 towards the direction D2 contrary with an above-mentioned direction D1 the overlap reversion union lever 14 of wire frame 2 having been carried out die-cut part, and to create the region towards the overlap 7 of the direction D2 contrary with direction D1 be exactly overlap reversion region 4.
Hereafter, as shown in Fig. 4 (a), (b), an end of the wire frame 2 optical semiconductor 1 being arranged in couple of conductor frame 2,2. Then by silk thread 9, another wire frame 2 in couple of conductor frame 2,2 is welded with optical semiconductor 1.
Then, as shown in Fig. 5 (a), (b), in the way of making overlap reversion region 4 expose, an end in optical semiconductor 1 and wire frame 2,2 is immersed in the mould 11 of the resin (such as epoxy resin) 3 being filled with melting. In addition, the part being arranged in the overlap 6 of optical semiconductor 1 side from overlap reversion region 4 is immersed in the resin of melting, and a part is exposed. Now, the resin (such as epoxy resin) 3 of melting transmits in the part exposed from the part soaked of overlap 6 and swells the protuberance part of resin 3 (the symbol 3b be exactly) in wire frame 2,2, the protuberance of resin 3 arrives overlap reversion region 4, face existing for overlap 6 becomes tabular surface, thus stops protuberance. Therefore directly resin is hardened, just can form resin and only swell to arriving the state before overlap reversion region 4 from bottom surface 3a. Resin also can slightly swell on the face relative with overlap 6 of wire frame 2,2, but belongs to tabular surface due to it, thus cannot arrive overlap reversion region 4 and stop. Thus, as shown in Fig. 6 (a), (b), it is possible to can not reverse than overlap by resin 3 and use resin 3 to be sealed an end of optical semiconductor 1 and wire frame 2,2 in the way of region 4 is first swelled.
Then, as shown in Fig. 7 (a), (b), posture maintenance union lever 15 is carried out die-cut such that it is able to produce the optical semiconductor device of Fig. 1 (a), (b). In Fig. 1 (a), (b), wire frame 2,2 remains the die-cut vestige of the union lever at overlap reversion union lever 14 and these 2 positions of posture maintenance union lever 15 respectively. In the front view of Fig. 1 (a), wide region, other regions of width ratio of wire frame 2,2 is exactly the die-cut vestige of union lever. Due to overlap reversion with union lever 14 than posture maintenance union lever 15 closer to sealing resin section 3 side, therefore overlap reversion region 4 be present in the die-cut vestige of union lever of sealing resin section 3 side.
As above, in the optical semiconductor device of Fig. 1 (a), (b), can when need not at substantial cost and when labor force, prevent the protuberance of the resin in wire portion (wire frame), thus just can prevent the situation producing the welding moistening badness of wire portion (wire frame) in the welding operation for being installed on installation base plate.
In addition, Fig. 8 (a), (b), (c) are the figure of other configuration examples of the optical semiconductor device representing the present invention. And Fig. 8 (a) is front view, Fig. 8 (b) is side-view, and Fig. 8 (c) is vertical view. See Fig. 8 (a), (b), (c), this optical semiconductor device 40 has 9 optical semiconductors 21, the wire frame (9 wire frames) 22 of the optical semiconductor 21 that is respectively arranged with 9 forms couple of conductor frame respectively with 9 wire frames 22 and 1 the wire frame 32 being undertaken by silk thread 29 and 9 optical semiconductors 21 welding, the above-mentioned optical semiconductor that covers 9 optical semiconductors 21 and above-mentioned couple of conductor frame 22,32 arrange the sealing resin section 23 of end of side.
And this optical semiconductor device 40 also has cover portion (resin-case) 34, this cover portion (resin-case) 34 surrounds sealing resin section 23, and it is outstanding to arrange the opposition side of side to optical semiconductor compared with the bottom surface 23a of sealing resin section 23 at least partially. Wherein, cover portion 34 is provided with the exit window for making the light from each optical semiconductor 21 penetrate respectively as opening 35. In addition, in the example of Fig. 8 (a), (b), (c), cover portion 34 has overshooting shape part 36 in both side ends.
In this optical semiconductor device 40,9 wire frames 22 have overlap reversion region 24 with 1 wire frame 32 in the region (region namely not sealed by resin) being positioned at the opposition side that above-mentioned optical semiconductor arranges side compared with the bottom surface 23a of sealing resin section 23. Wire frame 22,32 has overlap in any one party in relative face respectively, and another face is tabular surface, reverses in region 24 at overlap, and the face with overlap is the face different from other regions with tabular surface. Wherein, overlap reversion region 24 is arranged at above-mentioned sealing resin section 23 side compared with the minimum bottom surface in cover portion 34 (being the bottom surface 36a of the overshooting shape part 36 of the both side ends in cover portion 34 in the example of Fig. 8 (a), (b), (c)). And in Fig. 8 (a), (b), symbol 23b is the protuberance portion of sealing resin section 23, and symbol 26,27 is overlap.
Fig. 9 (a), (b), Figure 10 (a), (b), Figure 11 (a), (b), Figure 12 (a), (b), Figure 13 (a), (b), Figure 14 (a), (b), Figure 15 (a), (b) are the figure of manufacturing process's example of the optical semiconductor device representing Fig. 8 (a), (b), (c). And, Fig. 9 (a), Figure 10 (a), Figure 11 (a), Figure 12 (a), Figure 13 (a) are vertical views, Figure 14 (a), Figure 15 (a) are front views, Fig. 9 (b), Figure 10 (b), Figure 11 (b), Figure 12 (b), Figure 13 (b) are the line A-A side-view of Fig. 9 (a), Figure 10 (a), Figure 11 (a), Figure 12 (a), Figure 13 (a) respectively, and Figure 14 (b), Figure 15 (b) are the side-view of Figure 14 (a), Figure 15 (a) respectively.
When the optical semiconductor device of construction drawing 8 (a), (b), first, as shown in Fig. 9 (a), (b), in the way of remaining posture maintenance union lever 45 and overlap reversion union lever 44, wire frame 22,32 (the 1st die-cut operation) is punched out from compacting steel plate towards a direction (such as pressing the direction of paper). As shown in Fig. 9 (b), by the 1st die-cut operation, the residual posture maintenance part of union lever 45 and overlap reversion union lever 44, produces the overlap 26 of D1 facing one direction in wire frame 22,32.
Then, as shown in Figure 10 (a), (b), for the wire frame 22,32 that have passed through Fig. 9 (a) of the 1st die-cut operation, the state of (b), from the direction contrary with above-mentioned 1st die-cut operation (such as by the direction of paper towards front), above-mentioned overlap reversion union lever 44 is carried out die-cut, wire frame 22,32 arranges overlap reversion region 24 (the 2nd die-cut operation).Namely, by the 2nd die-cut operation, as shown in Figure 10 (b), produce the overlap 27 towards the direction D2 contrary with an above-mentioned direction D1 the overlap reversion union lever 44 of wire frame 22,32 having been carried out die-cut part, and to create the region towards the overlap 27 of the direction D2 contrary with direction D1 be exactly overlap reversion region 24.
Hereafter, as shown in Figure 11 (a), (b), the end of the wire frame 22 (9 wire frames 22) 9 optical semiconductors 21 being arranged in couple of conductor frame 22,32. Then by silk thread 29, another wire frame 32 (1 wire frame 32) in couple of conductor frame 22,32 is welded with optical semiconductor 21.
Then, as shown in Figure 12 (a), (b), posture maintenance union lever 45 is carried out die-cut.
Next, as shown in Figure 13 (a), (b), at bending position place by wire frame 22,32 to the direction bending of arrow M. Close to the position arranging position of optical semiconductor 21 compared with the overlap reversion region 24 that bending position is with wire frame 22 is respective.
Then, as shown in Figure 14 (a), (b), wire frame 22,32 inserted cover portion (resin-case) 34 at Figure 13 (a), (b) with the face (mounting surface of optical semiconductor 21 and wire 29) shown in symbol R. Further, Figure 16 (a), (b) show the cover portion (resin-case) 34 before insertion wire frame 22,32. Wherein, Figure 16 (a) is front view, and Figure 16 (b) is vertical view. Cover portion (resin-case) 34 shown in Figure 16 (a) be resin by injection before state, in this cover portion (resin-case) 34, it is provided with on the surface (being provided with the face of opening 35) of cover portion (resin-case) 34 when resin injection with to prevent the heat-resistant film 37 of resin leakage. That is, when resin injection described later, resin also can enter in the opening 35 in cover portion (resin-case) 34, if therefore not arranging heat-resistant film 37, can produce resin leakage, and by arranging heat-resistant film 37, can prevent resin leakage. And heat-resistant film 37 will be stripped after the resin has hardened.
As above, when by Figure 13 (a) of wire frame 22,32, (b) using the face shown in symbol R as initial be inserted in cover portion (resin-case) 34 after, as shown in Figure 15 (a), (b), the resin (such as epoxy resin) 23 after melting is injected in cover portion (resin-case) 34 until height H place the position (i.e. the bottom surface of resin 23) of height H of resin 23 (the symbol 23a be). That is, resin by injection (such as epoxy resin) 23 in the way of making the overlap reversion region 24 of wire frame 22,32 expose. In addition, the part being arranged in the overlap 26 of optical semiconductor 21 side compared with region 24 of reversing with overlap is immersed in the resin of melting, and a part is exposed.
Now, the resin (such as epoxy resin) 23 of melting can transmit in the part that the part soaked from overlap 26 is exposed and swell in wire frame 22,32 (symbol 23b is the part that resin 23 swells), and the protuberance of resin 23 will stop when arriving overlap reversion region 24. Resin also can swell slightly in the opposition side of the overlap 26 of wire frame 22,23, however due to be tabular surface thus can not arrive overlap reversion region 24 just stop protuberance. Resin 23 is used to be sealed an end of optical semiconductor 21 and wire frame 22,32 consequently, it is possible to can not reverse than overlap by resin 23 in the way of region 24 is first swelled. So just can produce the optical semiconductor device of Fig. 8 (a), (b), (c).
As above, at Fig. 8 (a), (b), in the optical semiconductor device 40 of (c), can when need not at substantial cost and when labor force, prevent the protuberance of resin in wire portion (wire frame), in addition, at Fig. 8 (a), (b), in the optical semiconductor device 40 of (c), the minimum bottom surface of end and cover portion 34 that the optical semiconductor in overlap reversion region 24 arranges side is (at Fig. 8 (a), (b), c the example of () is the bottom surface 36a of overshooting shape part 36 of the both side ends in cover portion 34) compare and it is arranged at sealing resin section 23 side.When being installed on installation base plate by the optical semiconductor device of the present invention, the minimum bottom surface in cover portion 34 contacts with installation base plate. Be arranged at for optical semiconductor device being fixed on the solder of installation base plate the face residing for resin-case 34 of installation base plate opposition side face in the outstanding position of the wire frame 22,32 of insertion. Thus overlap reversion region 24 is arranged at resin 23 side compared with the minimum bottom surface in cover portion 34, thus overlap reversion region 24 can reliably prevent resin from arriving weld. The position stopped due to resin protuberance is the end that semiconductor element arranges the overlap reversion region 24 of side, as long as therefore this end is positioned at resin 23 side compared with the minimum bottom surface in cover portion 34. The end in overlap reversion region 24 refers to the boundary member in overlap reversion region 24 and other regions in wire frame 22,32. In addition, even if only utilizing an end to fail to prevent resin from swelling, in overlap reverses region 24, the resin of protuberance also can unroll and transmit in overlap 27 to the relative face of wire frame 22,32, even if resin arrives another end, owing to this place is tabular surface, thus also can prevent resin from swelling herein. That is, if another end in overlap reversion region 24 is also positioned at resin 23 side compared with the minimum bottom surface in cover portion 34, then protuberance can dual be prevented. Thus preferably overlap reversion region 24 entirety is positioned at resin 23 side compared with the minimum bottom surface in cover portion 34.
And in the example of Fig. 8 (a), (b), (c), in cover portion 34, also opening 35 it is provided with, it is also possible to opening 35 is not set at the position not being provided with optical semiconductor 21 at the position not being provided with optical semiconductor 21.
In addition, in the example of Fig. 8 (a), (b), (c), the both side ends in cover portion 34 is provided with overshooting shape part 36, and overshooting shape part 36 is not limited to the both side ends in cover portion 34, moreover it is possible to be arranged at any part. Or the complete cycle that can also make cover portion 34 becomes the height (now the periphery in cover portion 34 be all overshooting shape part) identical with overshooting shape part 36.
The present invention can be used for employing in the device of the wire frame of the device etc. of the LED of lamp type, semiconductor laser, light device, resin housing.
Claims (3)
1. an optical semiconductor device, it has: optical semiconductor, for setting the wire frame of this optical semiconductor, the above-mentioned optical semiconductor covering above-mentioned optical semiconductor and above-mentioned wire frame arranges the sealing resin section of the end of side, it is characterized in that, above-mentioned wire frame from above-mentioned sealing resin section in the part exposed from above-mentioned sealing resin section, respectively any one face in relative face has overlap facing one direction, the face relative with an above-mentioned direction is smooth, above-mentioned wire frame has overlap reversion region in the region being positioned at the opposition side that above-mentioned optical semiconductor arranges side compared with the bottom surface of above-mentioned sealing resin section, above-mentioned overlap reversion region has overlap on the face relative with an above-mentioned direction, and the face in an above-mentioned direction is smooth.
2. optical semiconductor device according to claim 1, it is characterized in that, above-mentioned optical semiconductor device also has cover portion, this cover portion surrounds above-mentioned sealing resin section, arranging the opposition side of side to above-mentioned optical semiconductor compared with the bottom surface of above-mentioned sealing resin section at least partially outstanding, the end that the above-mentioned optical semiconductor in above-mentioned overlap reversion region arranges side is arranged at above-mentioned sealing resin section side compared with the minimum bottom surface in above-mentioned cover portion.
3. the manufacture method of an optical semiconductor device, it is characterised in that, have:
1st die-cut operation, in the way of at least remaining overlap reversion union lever, cuts out wire frame from a direction from compacting steel plate stamping;
2nd die-cut operation, for having carried out the above-mentioned wire frame after the 1st die-cut operation, carries out die-cut from the direction contrary with above-mentioned 1st die-cut operation to above-mentioned overlap reversion union lever, arranges overlap reversion region on above-mentioned wire frame;
The operation of optical semiconductor is set in an end of above-mentioned wire frame; And
So that the mode that above-mentioned overlap reversion region is exposed uses the operation of an end of the above-mentioned optical semiconductor of resin seal and above-mentioned wire frame.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011052149A JP5611867B2 (en) | 2011-03-09 | 2011-03-09 | Optical semiconductor device and manufacturing method thereof |
| JP2011-052149 | 2011-03-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102683316A CN102683316A (en) | 2012-09-19 |
| CN102683316B true CN102683316B (en) | 2016-06-08 |
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| JP (1) | JP5611867B2 (en) |
| KR (1) | KR101917235B1 (en) |
| CN (1) | CN102683316B (en) |
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| CN107275308A (en) * | 2017-06-30 | 2017-10-20 | 深圳赛意法微电子有限公司 | Semiconductor encapsulation device, semiconductor lead frame and its rib cutting method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386484A (en) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | Manufacture of optical semiconductor device |
| CN1607681A (en) * | 2003-10-15 | 2005-04-20 | 陈聪欣 | Method for controlling crawling glue phenomenon in preparation process of light emitting diode sealing glue |
| JP3685057B2 (en) * | 1999-12-08 | 2005-08-17 | 日亜化学工業株式会社 | LED lamp and manufacturing method thereof |
| CN201112404Y (en) * | 2007-07-03 | 2008-09-10 | 鹤山丽得电子实业有限公司 | White light LED package structure |
| CN201440425U (en) * | 2009-05-07 | 2010-04-21 | 一诠精密工业股份有限公司 | Improved structure of light emitting diode bracket |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0412697Y2 (en) * | 1985-06-18 | 1992-03-26 | ||
| JPS63226051A (en) * | 1987-03-16 | 1988-09-20 | Hitachi Ltd | Lead frame |
| JP4390989B2 (en) * | 1999-08-20 | 2009-12-24 | ローム株式会社 | Electronic component and manufacturing method thereof |
| JP2003045532A (en) * | 2001-08-03 | 2003-02-14 | Japan Aviation Electronics Industry Ltd | Contact |
| JP5633392B2 (en) * | 2011-01-26 | 2014-12-03 | 日亜化学工業株式会社 | Semiconductor device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386484A (en) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | Manufacture of optical semiconductor device |
| JP3685057B2 (en) * | 1999-12-08 | 2005-08-17 | 日亜化学工業株式会社 | LED lamp and manufacturing method thereof |
| CN1607681A (en) * | 2003-10-15 | 2005-04-20 | 陈聪欣 | Method for controlling crawling glue phenomenon in preparation process of light emitting diode sealing glue |
| CN201112404Y (en) * | 2007-07-03 | 2008-09-10 | 鹤山丽得电子实业有限公司 | White light LED package structure |
| CN201440425U (en) * | 2009-05-07 | 2010-04-21 | 一诠精密工业股份有限公司 | Improved structure of light emitting diode bracket |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101917235B1 (en) | 2018-11-13 |
| JP2012190941A (en) | 2012-10-04 |
| JP5611867B2 (en) | 2014-10-22 |
| CN102683316A (en) | 2012-09-19 |
| KR20120103470A (en) | 2012-09-19 |
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