CN107275308A - Semiconductor encapsulation device, semiconductor lead frame and its rib cutting method - Google Patents

Semiconductor encapsulation device, semiconductor lead frame and its rib cutting method Download PDF

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Publication number
CN107275308A
CN107275308A CN201710519913.8A CN201710519913A CN107275308A CN 107275308 A CN107275308 A CN 107275308A CN 201710519913 A CN201710519913 A CN 201710519913A CN 107275308 A CN107275308 A CN 107275308A
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CN
China
Prior art keywords
pin
semiconductor
muscle
raised
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710519913.8A
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Chinese (zh)
Inventor
徐亚亚
余蓥军
杨晓东
都俊兴
周杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHENZHEN SAIYIFA MICROELECTRONICS CO Ltd
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SHENZHEN SAIYIFA MICROELECTRONICS CO Ltd
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Publication date
Application filed by SHENZHEN SAIYIFA MICROELECTRONICS CO Ltd filed Critical SHENZHEN SAIYIFA MICROELECTRONICS CO Ltd
Priority to CN201710519913.8A priority Critical patent/CN107275308A/en
Publication of CN107275308A publication Critical patent/CN107275308A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4821Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

Present invention is disclosed a kind of semiconductor encapsulation device, semiconductor lead frame and its rib cutting method, the semiconductor encapsulation device includes:Package casing;Semiconductor devices, is coated in the package casing;Pin, for being electrically connected with the semiconductor devices, and it is exposed outside the package casing;The pin has by the two raised square-wave-shaped structures formed with a groove respectively close to the both sides of the package casing, length direction of the described raised and described groove along the pin is arranged alternately successively, when the pin is welded with PCB printed circuit boards, scolding tin will be converged in the groove.The semiconductor lead frame and its rib cutting method of the present invention is used to manufacture the semiconductor encapsulation device.Semiconductor encapsulation device, lead frame and its rib cutting method of the present invention can improve the welding performance and reliability of pin and PCB printed circuit boards.

Description

Semiconductor encapsulation device, semiconductor lead frame and its rib cutting method
Technical field
The present invention relates to the encapsulation field of semiconductor, more particularly to a kind of semiconductor encapsulation device, semiconductor lead frame And its rib cutting method.
Background technology
Semiconductor encapsulation device be by wafer according to product type and functional requirement processing obtain have individual chips Device.At present, semiconductor encapsulation device, for example, triode packaging system, it is wide that the size of its pin is generally 1.35mm, 0.5mm It is thick.When the semiconductor encapsulation device is arranged on PCB printed circuit boards, the area of the PCB printed circuit boards of occupancy is generally 1.35mm*0.5mm*3 (wherein 3 be number of pin), for inline package, PCB printed circuit boards will be semiconductor package Each pin of assembling device opens a perforate, and pin is bigger, and bore size is also bigger, takes PCB printed circuit boards Size is also bigger, causes the quantity of the semiconductor devices welded on PCB printed circuit boards to reduce.On the other hand, because PCB prints electricity Perforate on the plate of road is slightly larger than pin, and when pin is soldered into PCB printed circuit boards, the scolding tin easily caused on pin passes through Perforate flows downward, and causes that the welding performance of pin and PCB printed circuit boards is poor, the insecure problem of welding.
The content of the invention
In order to solve the pin and PCB printed circuit board welding performances of semiconductor encapsulation device present in prior art Difference, the insecure problem of welding, the present invention provide a kind of semiconductor encapsulation device.
The present invention separately provides a kind of semiconductor lead frame, and above-mentioned semiconductor packages can be formed after the lead frame rib cutting The mount structure of device.
The present invention separately provides a kind of semiconductor lead frame, and the lead frame is the lead frame after rib cutting, and this draws Wire frame has the mount structure of above-mentioned semiconductor encapsulation device.
The present invention separately provides a kind of rib cutting method of semiconductor lead frame, and this method can form above-mentioned semiconductor packages The mount structure of device.
The present invention provides a kind of semiconductor encapsulation device, including:
Package casing;
Semiconductor devices, is coated in the package casing;
Pin, for being electrically connected with the semiconductor devices, the pin is exposed outside the package casing;
The pin has by the two raised square-wave-shaped structures formed with a groove, institute respectively close to the both sides of the package casing State length direction of the raised and described groove along the pin to be arranged alternately successively, the pin is carried out with PCB printed circuit boards During welding, scolding tin will be converged in the groove.
Optionally, after pin insertion PCB printed circuit boards, it is raised that the PCB printed circuit boards are stuck in described two Between so that one of raised positioned at the PCB printed circuit boards upper surface, another projection is located at the PCB and prints electricity The lower surface of road plate.
Optionally, the width dimensions of the pin are 0.7mm-0.9mm, and the raised height is 0.075mm-0.1mm.
Optionally, the outer surface of the pin is coated with tin layers.
Optionally, the coverage of the tin layers is that the package casing is extended close to since the groove of the pin Pin part.
The present invention separately provides a kind of semiconductor lead frame, including:
An at least radiating area;
An at least slide glass area, for mounting semiconductor, the slide glass area connects the radiating area;
An at least pin framework, the pin framework includes corner framework, multiple pins in the corner framework and Connect the first of each pin and connect muscle, second company's muscle, described first connects muscle close to the slide glass area, and described second connects muscle positioned at described First connects side of the muscle away from the slide glass area;
After first company muscle is cut off, the first projection is formed at the rib cutting of each pin both sides respectively, second company muscle is cut Have no progeny, form second raised at the rib cutting of each pin both sides respectively, the described first raised and described second projection is along the pin Length direction be arranged at intervals, and form a groove between first raised and described second projection, first raised, described the Two raised and described groove formation square-wave-shaped structures.
Optionally, the described first pin width connected between muscle and second company muscle is 0.7mm ~ 0.9mm.
The present invention separately provides a kind of semiconductor lead frame, including:
Radiating area;
Slide glass area, for mounting semiconductor, the slide glass area connects the radiating area;
Pin, for the semiconductor devices being electrically connected in the slide glass area, both sides point of the pin close to the slide glass area Ju You not be by the two raised square-wave-shaped structures formed with a groove, length direction of the described raised and described groove along the pin It is arranged alternately successively, when the pin is welded with PCB printed circuit boards, scolding tin will be converged in the groove.
The present invention separately provides a kind of semiconductor lead frame rib cutting method, and the lead frame includes radiating area, slide glass area With pin framework, the pin framework includes corner framework, multiple pins and each pipe of connection in the corner framework The first of pin connects muscle, second company's muscle, and methods described includes:
First time rib cutting:Cut-out first connects muscle, after first company's muscle is cut, forms first respectively at the rib cutting of each pin both sides convex Rise;
Plating:Electroplate to form a tin layers in the outer surface of pin framework;
Second of rib cutting:Cut-out second connects muscle, cuts after second company's muscle, it is convex to form second respectively at the rib cutting of each pin both sides Rise, a groove is formed between the described first raised and described second projection, the coverage of the tin layers is from the pin Groove starts to the pin part close to the slide glass area.
Optionally, before first time rib cutting, methods described also includes:
Plated film is carried out to the semiconductor lead frame, the outer surface of whole lead frame is formed an electrodeposited coating.
The technical scheme that embodiments of the invention are provided can include the following benefits:
The semiconductor encapsulation device of the present invention by forming by the two raised square waves formed with a groove respectively in the both sides of pin Shape structure so that when pin is with PCB printed circuit plate welds, scolding tin is pinned in a groove, so that scolding tin by two projections It can fully be contacted with pin, PCB printed circuit boards, and then strengthen the weld strength of pin and PCB printed circuit boards, riser The welding performance and reliability of pin and pcb board.
The semiconductor lead frame of the present invention connects muscle by setting first to connect muscle and second so that connect muscle and second first After even muscle is cut, first raised, the second raised and groove can be formed at the rib cutting of pin both sides, thereby, is partly led by this The semiconductor encapsulation device that body lead frame is made passes through first raised and the second projection when with PCB printed circuit plate welds Scolding tin is pinned in a groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthens pin With the weld strength of PCB printed circuit boards, the welding performance and reliability of lifting pin and pcb board.
The semiconductor lead frame of the present invention thereby, is partly led by forming two raised and grooves in the both sides of pin by this Scolding tin is pinned and existed when with PCB printed circuit plate weld by the semiconductor encapsulation device that body lead frame is made by two projections In groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthen pin and PCB printed circuits The welding performance and reliability of the weld strength of plate, lifting pin and pcb board.
The semiconductor lead frame rib cutting method of the present invention is walked by the method for first time rib cutting, plating and second of rib cutting Suddenly, make to form first raised, the second raised and groove, thereby, the semiconductor leads after the rib cutting at the rib cutting of pin both sides The semiconductor encapsulation device that framework is made is raised by scolding tin by the first projection and second when with PCB printed circuit plate welds Pin in a groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthen pin and PCB prints The welding performance and reliability of the weld strength of circuit board processed, lifting pin and pcb board.Also, second of rib cutting can make from Groove starts to the pin part close to slide glass area to retain tin layers, so as to imitate the ground for avoiding pin exposed(For example, copper Material)Directly welded with scolding tin, and then avoid causing the problem of welding performance is poor because of copper material and scolding tin poor compatibility.
It should be appreciated that the general description of the above and detailed description hereinafter are only exemplary, this can not be limited Invention.
Brief description of the drawings
Accompanying drawing herein is merged in specification and constitutes the part of this specification, shows the implementation for meeting the present invention Example, and in specification together for explaining principle of the invention.
Fig. 1 is the structural representation of semiconductor encapsulation device of the present invention.
Fig. 2 is the partial enlarged drawing in Tu1Zhong A areas.
Fig. 3 is the structural representation of semiconductor lead frame of the present invention.
Fig. 4 is semiconductor lead frame rib cutting method flow diagram of the invention.
Embodiment
In order to further illustrate the principle and structure of the present invention, the preferred embodiments of the present invention are carried out in conjunction with accompanying drawing detailed Describe in detail bright.
As shown in figure 1, it is the structural representation of semiconductor encapsulation device of the present invention.It is outer that the packaging system 10 includes encapsulation Shell 11, is coated on the semiconductor devices in package casing 11(It is not shown)With the exposed pin 12 outside package casing 11.
In Fig. 1, the semiconductor encapsulation device can be the packaging system of transistor, for example, triode packaging system, should The packaging system of transistor has three pins, can be connected respectively the grid, source electrode and drain electrode of triode.But it is not limited In this, the semiconductor encapsulation device can also be applied to the encapsulation of other semiconductor devices, for example, diode, integrated chip etc..Pipe The quantity of pin can change according to the model of encapsulation semiconductor devices.
In the present embodiment, mainly illustrated by taking the semiconductor encapsulation device of three pins as an example.
As shown in figure 1, exposing three pins 12 outside package casing 11, the both sides of each pin 12 form square-wave-shaped respectively Structure.With reference to shown in Fig. 2, it is the partial enlarged drawing in Tu1Zhong A areas.The both sides of each pin 12 respectively have two projections 121, 122 and form groove 123 between two projections 121,122, the length side of two projections 121,122 and groove 123 along pin 12 To being arranged alternately successively, square-wave-shaped structure is formed.
When pin 12 is inserted into PCB printed circuit boards(Printed Circuit Board)When, PCB printed circuit boards Between two projections 121,122, one of projection 121 is located at PCB printed circuit boards upper surface, and another projection 122 is located at The lower surface of PCB printed circuit boards, i.e. PCB printed circuit boards are located at the centre of groove 123.In subsequent welding process, weldering Tin is flowed into groove 123 from the outer face of projection 121, and the scolding tin flowed into groove 123 is blocked in groove 123 by projection 122 In, prevent scolding tin to be lost in, scolding tin is fully contacted with circuit board, pin 12, and then strengthen pin 12 and PCB printed circuits The welding performance and reliability of the weld strength of plate, lifting pin 12 and pcb board.
To reduce the area that pin 12 is occupied on PCB printed circuit boards, the width of pin 12 is cut down, subtracts its width L1 It is small to arrive 0.7mm-0.9mm.The raised height of the both sides of pin 12 is 0.075mm, therefore, and pin is in projection 121(Or projection 122) The width L2 at place is two raised height and pin width sum, for example, for the mm of+0.075 mm of 0.075 mm+0.7= 0.85mm。
More excellent, to avoid the exposed ground of pin 12(For example, copper material)Directly welded with PCB printed circuit boards, in pipe The outer surface of pin 12 coats one layer of tin layers that can be merged with scolding tin.
More preferably, during the rib cutting for the lead frame that tin layers formation is carried out when producing the semiconductor encapsulation device (It is described in detail below), i.e. the coverage of the tin layers is to extend close to package casing since the groove 123 of pin 12 11 pin part(L3 parts as shown in Figure 1).The coverage of the tin layers can be prevented effectively from pin 12 and PCB and print electricity The situation that copper material is directly welded with scolding tin during the plate weld of road, and then avoid and cause because of the poor compatibility between copper material and scolding tin The problem of welding performance is poor.
The present invention separately provides a kind of semiconductor lead frame, as shown in figure 3, it is the knot of semiconductor lead frame of the present invention Structure schematic diagram.The semiconductor lead frame 20 includes an at least radiating area 21, at least one for mounting semiconductor slide glass area 22 and at least one pin framework 23, the connection of slide glass area 22 radiating area 21, pin framework 23 is located at slide glass area 22 away from radiating area 21 Side.In figure 3, two radiating areas 21, Liang Ge slide glasses area 22 and a pin framework 23 are only shown(Liang Ge slide glasses area 22 is total to With a pin framework 23, the number of pins needed for Liang Ge slide glasses area 22 is laid with pin framework 23).But this is not limited to, should Lead frame 20 may include multiple radiating areas 21, multiple slide glass areas 22 and multiple pin frameworks 23, herein not to radiating area 21, load The quantity of section 22 and pin framework 23 is limited.In the present embodiment, mainly carried out by taking the lead frame of transistor as an example Illustrate, for example, by taking the lead frame of triode as an example.The semiconductor lead frame with three pins is illustrated that in Fig. 3, can To understand, the semiconductor lead frame that lead frame of the invention can also be applied to more than two pins or three pins, pin Quantity can be changed according to the difference of semiconductor devices model.
As shown in figure 3, pin framework 23 includes corner framework 231, multiple pins 232 in corner framework 231 with And the first of each pin 232 of connection connects muscle 233, second and connect muscle 234, first company's muscle 233 is close to slide glass area 22, the second company muscle 234, which are located at first, connects side of the muscle 233 away from slide glass area 22.
In addition, first to connect the pin width that muscle 233 and second connects between muscle 234 be 0.7mm ~ 0.9mm, except being provided with first Even muscle 233 and second connects outside the pin part of muscle 234, and the width of pin 232 is also 0.7mm ~ 0.9mm.
After first, which connects muscle 233, is cut off, the first projection is formed at the rib cutting of the both sides of each pin 232 respectively, this first Projection is the projection 121 shown in Fig. 2;After second, which connects muscle 234, is cut off, formed respectively at the rib cutting of each both sides of pin 232 Second is raised, the second raised projection 122 for shown in Fig. 2;First raised and the second raised length direction along pin 232 It is arranged at intervals, and a groove is formed between the first projection and the second projection, the groove can be the groove 123 shown in Fig. 2, first Raised, the second projection and groove form square-wave-shaped structure as shown in Figure 2.That is, first company's muscle 233 and second connects muscle 234 and cut Afterwards, the pin of lead frame 20 forms the mount structure of above-mentioned semiconductor encapsulation device 10.
Therefore, above-mentioned semiconductor encapsulation device 10 can be formed by the lead frame 20 in the present embodiment, i.e. in lead frame After the completion of the rib cutting of frame 20, the chip of semiconductor devices, the ultra-fine plain conductor of recycling or electric conductivity are sticked in slide glass area 22 The bond pad of chip is connected to corresponding pin by resin, the encapsulation for being then made of resin slide glass area 22 and radiating area 21 Shell is packaged, and just can form above-mentioned semiconductor encapsulation device 10.
Further, the present invention separately provides a kind of semiconductor lead frame, and the lead frame is the lead frame after rib cutting, i.e., The lead frame is used for the encapsulation of individual chips, and it includes radiating area, the slide glass area for mounting semiconductor chip and extremely Few two pins.Slide glass area is electrically connected with radiating area.Each pin has by two projections and one respectively close to the both sides in slide glass area The square-wave-shaped structure of groove formation, those the raised and length directions of the groove along pin are arranged alternately successively so that the pin When being welded with PCB printed circuit boards, scolding tin can be converged in the groove.
Semiconductor lead frame in the present embodiment can be used for forming above-mentioned semiconductor encapsulation device 10, specific to be formed Process is as follows:
First stick the chip of semiconductor devices in slide glass area, recycle ultra-fine plain conductor or electroconductive resin by chip Bond pad is connected with corresponding pin, is then packaged in slide glass area and radiating area with package casing, in this way, just can be formed Above-mentioned semiconductor encapsulation device 10.
The present invention separately provides a kind of semiconductor lead frame rib cutting method, as shown in figure 4, it draws for the semiconductor of the present invention Wire frame rib cutting method flow diagram.Semiconductor lead frame in the present embodiment is the lead frame 20 shown in above-mentioned Fig. 3, should Lead frame includes radiating area, slide glass area and pin framework, and pin framework includes corner framework, multiple in the framework of corner First company's muscle of pin and each pin of connection, second connect muscle.The method of the present invention is as follows:
Step S1, first time rib cutting:Cut-out first connects muscle, after first company's muscle is cut, is formed respectively at the rib cutting of each pin both sides First is raised.
Before rib cutting step starts in first time, plated film is carried out to whole lead frame, makes the appearance of whole lead frame Face forms the electrodeposited coating with protective effect.The electrodeposited coating can be alloy plated layer, titanium electrodeposited coating or other electrodeposition of metals.
After the completion of first time rib cutting, pin framework all exposes ground(For example, copper material).
Step S2, plating:Electroplate to form a tin layers in the outer surface of pin framework;
After the completion of first time rib cutting, on the pin framework for expose ground plating formed a tin layers, in favor of follow-up pin with The welding of PCB printed circuit boards.
After the completion of to be electroplated, the tin layers are toasted.
Step S3, second of rib cutting:Cut-out second connects muscle, cuts after second company's muscle, distinguishes at the rib cutting of each pin both sides The second projection is formed, a groove is formed between the first projection and the second projection, the coverage of the tin layers is from the recessed of pin Start at groove to the pin part close to slide glass area.
During second of rib cutting, the position that rib cutting starts connects at muscle for second, and rib cutting direction is to be connected from second at muscle to remote From the cutting in the direction in slide glass area, therefore, the tin layers more than second company's muscle are not cut off, i.e. from the groove of pin Place starts to the pin part close to slide glass area to remain with tin layers.On the other hand, also just because of since groove to close The pin part in slide glass area remains with tin layers so that when pin and PCB printed circuit boards are welded, can be prevented effectively from pin Exposed ground(For example, copper material)Directly welded with scolding tin, and then avoid causing weldability because of copper material and scolding tin poor compatibility Can be poor the problem of.And the tin layers being retained on pin of the present invention can be merged effectively with scolding tin, and then improve welding performance.
What the semiconductor encapsulation device of the present invention was formed by being formed respectively in the both sides of pin by two projections and a groove Square-wave-shaped structure so that when pin is with PCB printed circuit plate welds, scolding tin is pinned in a groove by two projections, so that Scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthen the weld strength of pin and PCB printed circuit boards, be carried The welding performance and reliability of riser pin and pcb board.
The semiconductor lead frame of the present invention connects muscle by setting first to connect muscle and second so that connect muscle and second first After even muscle is cut, first raised, the second raised and groove can be formed at the rib cutting of pin both sides, thereby, is partly led by this The semiconductor encapsulation device that body lead frame is made passes through first raised and the second projection when with PCB printed circuit plate welds Scolding tin is pinned in a groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthens pin With the weld strength of PCB printed circuit boards, the welding performance and reliability of lifting pin and pcb board.
The semiconductor lead frame of the present invention thereby, is partly led by forming two raised and grooves in the both sides of pin by this Scolding tin is pinned and existed when with PCB printed circuit plate weld by the semiconductor encapsulation device that body lead frame is made by two projections In groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthen pin and PCB printed circuits The welding performance and reliability of the weld strength of plate, lifting pin and pcb board.
The semiconductor lead frame rib cutting method of the present invention is walked by the method for first time rib cutting, plating and second of rib cutting Suddenly, make to form first raised, the second raised and groove, thereby, the semiconductor leads after the rib cutting at the rib cutting of pin both sides The semiconductor encapsulation device that framework is made is raised by scolding tin by the first projection and second when with PCB printed circuit plate welds Pin in a groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthen pin and PCB prints The welding performance and reliability of the weld strength of circuit board processed, lifting pin and pcb board.Also, second of rib cutting can make from Groove starts to the pin part close to slide glass area to retain tin layers, so as to imitate the ground for avoiding pin exposed(For example, copper Material)Directly welded with scolding tin, and then avoid causing the problem of welding performance is poor because of copper material and scolding tin poor compatibility.
The preferable possible embodiments of the present invention are these are only, are not limited the scope of the invention, it is all with the present invention Equivalent structure change made by specification and accompanying drawing content, is all contained in protection scope of the present invention.

Claims (10)

1. a kind of semiconductor encapsulation device, it is characterised in that including:
Package casing;
Semiconductor devices, is coated in the package casing;
Pin, for being electrically connected with the semiconductor devices, the pin is exposed outside the package casing;
The pin has by the two raised square-wave-shaped structures formed with a groove, institute respectively close to the both sides of the package casing State length direction of the raised and described groove along the pin to be arranged alternately successively, the pin is carried out with PCB printed circuit boards During welding, scolding tin will be converged in the groove.
2. semiconductor encapsulation device according to claim 1, it is characterised in that insert PCB printed circuits in the pin After plate, the PCB printed circuit boards are stuck between two projection so that one of raised positioned at the PCB printed circuits Plate upper surface, another projection is located at the lower surface of the PCB printed circuit boards.
3. semiconductor encapsulation device according to claim 1, it is characterised in that the width dimensions of the pin are 0.7mm- 0.9mm, the raised height is 0.075mm-0.1mm.
4. semiconductor encapsulation device according to claim 1, it is characterised in that the outer surface of the pin is coated with tin Layer.
5. semiconductor encapsulation device according to claim 4, it is characterised in that the coverage of the tin layers is from described The groove of pin starts to extend close to the pin part of the package casing.
6. a kind of semiconductor lead frame, it is characterised in that including:
An at least radiating area;
An at least slide glass area, for mounting semiconductor, the slide glass area connects the radiating area;
An at least pin framework, the pin framework includes corner framework, multiple pins in the corner framework and Connect the first of each pin and connect muscle, second company's muscle, described first connects muscle close to the slide glass area, and described second connects muscle positioned at described First connects side of the muscle away from the slide glass area;
After first company muscle is cut off, the first projection is formed at the rib cutting of each pin both sides respectively, second company muscle is cut Have no progeny, form second raised at the rib cutting of each pin both sides respectively, the described first raised and described second projection is along the pin Length direction be arranged at intervals, and form a groove between first raised and described second projection, first raised, described the Two raised and described groove formation square-wave-shaped structures.
7. the framework of semiconductor devices according to claim 6, it is characterised in that described first, which connects muscle and described second, connects Pin width between muscle is 0.7mm ~ 0.9mm.
8. a kind of semiconductor lead frame, it is characterised in that including:
Radiating area;
Slide glass area, for mounting semiconductor, the slide glass area connects the radiating area;
Pin, for the semiconductor devices being electrically connected in the slide glass area, both sides point of the pin close to the slide glass area Ju You not be by the two raised square-wave-shaped structures formed with a groove, length direction of the described raised and described groove along the pin It is arranged alternately successively, when the pin is welded with PCB printed circuit boards, scolding tin will be converged in the groove.
9. a kind of semiconductor lead frame rib cutting method, it is characterised in that the lead frame includes radiating area, slide glass area and pipe Foot frame, the pin framework includes corner framework, the multiple pins and each pin of connection in the corner framework First connects muscle, second company's muscle, and methods described includes:
First time rib cutting:Cut-out first connects muscle, after first company's muscle is cut, forms first respectively at the rib cutting of each pin both sides convex Rise;
Plating:Electroplate to form a tin layers in the outer surface of pin framework;
Second of rib cutting:Cut-out second connects muscle, cuts after second company's muscle, it is convex to form second respectively at the rib cutting of each pin both sides Rise, a groove is formed between the described first raised and described second projection, the coverage of the tin layers is from the pin Groove starts to the pin part close to the slide glass area.
10. semiconductor lead frame rib cutting method according to claim 9, it is characterised in that before first time rib cutting, Methods described also includes:
Plated film is carried out to the semiconductor lead frame, the outer surface of whole lead frame is formed an electrodeposited coating.
CN201710519913.8A 2017-06-30 2017-06-30 Semiconductor encapsulation device, semiconductor lead frame and its rib cutting method Pending CN107275308A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109047582A (en) * 2018-07-23 2018-12-21 江苏宝浦莱半导体有限公司 A kind of Trim Molding machine and its application method for packaging semiconductor
CN109904081A (en) * 2019-01-18 2019-06-18 深圳赛意法微电子有限公司 The packaging method of semiconductor product based on IDF lead frame

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297452A (en) * 1994-04-27 1995-11-10 Rohm Co Ltd Structure and method for temporarily fixing parts mounted on substrate to substrate
JPH0864737A (en) * 1994-08-23 1996-03-08 Nec Corp Resin-sealed semiconductor device and lead frame
JPH1126670A (en) * 1997-06-30 1999-01-29 Hitachi Ltd Semiconductor device and manufacturing method therefor and lead frame employed therefor
JP2000261040A (en) * 1999-01-05 2000-09-22 Nichia Chem Ind Ltd Light emitting diode and manufacture or the same, and display device using the same
JP2011249433A (en) * 2010-05-25 2011-12-08 Nichia Chem Ind Ltd Light-emitting device and method for manufacturing the same
CN102683316A (en) * 2011-03-09 2012-09-19 斯坦雷电气株式会社 Semiconductor device and manufacture method thereof
CN202495446U (en) * 2012-03-01 2012-10-17 赵振华 Thyristor of novel structure
CN206877985U (en) * 2017-06-30 2018-01-12 深圳赛意法微电子有限公司 Semiconductor encapsulation device and semiconductor lead frame

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297452A (en) * 1994-04-27 1995-11-10 Rohm Co Ltd Structure and method for temporarily fixing parts mounted on substrate to substrate
JPH0864737A (en) * 1994-08-23 1996-03-08 Nec Corp Resin-sealed semiconductor device and lead frame
JPH1126670A (en) * 1997-06-30 1999-01-29 Hitachi Ltd Semiconductor device and manufacturing method therefor and lead frame employed therefor
JP2000261040A (en) * 1999-01-05 2000-09-22 Nichia Chem Ind Ltd Light emitting diode and manufacture or the same, and display device using the same
JP2011249433A (en) * 2010-05-25 2011-12-08 Nichia Chem Ind Ltd Light-emitting device and method for manufacturing the same
CN102683316A (en) * 2011-03-09 2012-09-19 斯坦雷电气株式会社 Semiconductor device and manufacture method thereof
CN202495446U (en) * 2012-03-01 2012-10-17 赵振华 Thyristor of novel structure
CN206877985U (en) * 2017-06-30 2018-01-12 深圳赛意法微电子有限公司 Semiconductor encapsulation device and semiconductor lead frame

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109047582A (en) * 2018-07-23 2018-12-21 江苏宝浦莱半导体有限公司 A kind of Trim Molding machine and its application method for packaging semiconductor
CN109904081A (en) * 2019-01-18 2019-06-18 深圳赛意法微电子有限公司 The packaging method of semiconductor product based on IDF lead frame
CN109904081B (en) * 2019-01-18 2020-11-20 深圳赛意法微电子有限公司 Packaging method of semiconductor product based on IDF lead frame

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