CN107275308A - Semiconductor encapsulation device, semiconductor lead frame and its rib cutting method - Google Patents
Semiconductor encapsulation device, semiconductor lead frame and its rib cutting method Download PDFInfo
- Publication number
- CN107275308A CN107275308A CN201710519913.8A CN201710519913A CN107275308A CN 107275308 A CN107275308 A CN 107275308A CN 201710519913 A CN201710519913 A CN 201710519913A CN 107275308 A CN107275308 A CN 107275308A
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- pin
- semiconductor
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- raised
- lead frame
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 238000005520 cutting process Methods 0.000 title claims abstract description 59
- 238000005538 encapsulation Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 59
- 238000003466 welding Methods 0.000 claims abstract description 22
- 210000003205 muscle Anatomy 0.000 claims description 60
- 239000011521 glass Substances 0.000 claims description 43
- 238000007747 plating Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Present invention is disclosed a kind of semiconductor encapsulation device, semiconductor lead frame and its rib cutting method, the semiconductor encapsulation device includes：Package casing；Semiconductor devices, is coated in the package casing；Pin, for being electrically connected with the semiconductor devices, and it is exposed outside the package casing；The pin has by the two raised square-wave-shaped structures formed with a groove respectively close to the both sides of the package casing, length direction of the described raised and described groove along the pin is arranged alternately successively, when the pin is welded with PCB printed circuit boards, scolding tin will be converged in the groove.The semiconductor lead frame and its rib cutting method of the present invention is used to manufacture the semiconductor encapsulation device.Semiconductor encapsulation device, lead frame and its rib cutting method of the present invention can improve the welding performance and reliability of pin and PCB printed circuit boards.
Description
Technical field
The present invention relates to the encapsulation field of semiconductor, more particularly to a kind of semiconductor encapsulation device, semiconductor lead frame
And its rib cutting method.
Background technology
Semiconductor encapsulation device be by wafer according to product type and functional requirement processing obtain have individual chips
Device.At present, semiconductor encapsulation device, for example, triode packaging system, it is wide that the size of its pin is generally 1.35mm, 0.5mm
It is thick.When the semiconductor encapsulation device is arranged on PCB printed circuit boards, the area of the PCB printed circuit boards of occupancy is generally
1.35mm*0.5mm*3 (wherein 3 be number of pin), for inline package, PCB printed circuit boards will be semiconductor package
Each pin of assembling device opens a perforate, and pin is bigger, and bore size is also bigger, takes PCB printed circuit boards
Size is also bigger, causes the quantity of the semiconductor devices welded on PCB printed circuit boards to reduce.On the other hand, because PCB prints electricity
Perforate on the plate of road is slightly larger than pin, and when pin is soldered into PCB printed circuit boards, the scolding tin easily caused on pin passes through
Perforate flows downward, and causes that the welding performance of pin and PCB printed circuit boards is poor, the insecure problem of welding.
The content of the invention
In order to solve the pin and PCB printed circuit board welding performances of semiconductor encapsulation device present in prior art
Difference, the insecure problem of welding, the present invention provide a kind of semiconductor encapsulation device.
The present invention separately provides a kind of semiconductor lead frame, and above-mentioned semiconductor packages can be formed after the lead frame rib cutting
The mount structure of device.
The present invention separately provides a kind of semiconductor lead frame, and the lead frame is the lead frame after rib cutting, and this draws
Wire frame has the mount structure of above-mentioned semiconductor encapsulation device.
The present invention separately provides a kind of rib cutting method of semiconductor lead frame, and this method can form above-mentioned semiconductor packages
The mount structure of device.
The present invention provides a kind of semiconductor encapsulation device, including：
Package casing；
Semiconductor devices, is coated in the package casing；
Pin, for being electrically connected with the semiconductor devices, the pin is exposed outside the package casing；
The pin has by the two raised square-wave-shaped structures formed with a groove, institute respectively close to the both sides of the package casing
State length direction of the raised and described groove along the pin to be arranged alternately successively, the pin is carried out with PCB printed circuit boards
During welding, scolding tin will be converged in the groove.
Optionally, after pin insertion PCB printed circuit boards, it is raised that the PCB printed circuit boards are stuck in described two
Between so that one of raised positioned at the PCB printed circuit boards upper surface, another projection is located at the PCB and prints electricity
The lower surface of road plate.
Optionally, the width dimensions of the pin are 0.7mm-0.9mm, and the raised height is 0.075mm-0.1mm.
Optionally, the outer surface of the pin is coated with tin layers.
Optionally, the coverage of the tin layers is that the package casing is extended close to since the groove of the pin
Pin part.
The present invention separately provides a kind of semiconductor lead frame, including：
An at least radiating area；
An at least slide glass area, for mounting semiconductor, the slide glass area connects the radiating area；
An at least pin framework, the pin framework includes corner framework, multiple pins in the corner framework and
Connect the first of each pin and connect muscle, second company's muscle, described first connects muscle close to the slide glass area, and described second connects muscle positioned at described
First connects side of the muscle away from the slide glass area；
After first company muscle is cut off, the first projection is formed at the rib cutting of each pin both sides respectively, second company muscle is cut
Have no progeny, form second raised at the rib cutting of each pin both sides respectively, the described first raised and described second projection is along the pin
Length direction be arranged at intervals, and form a groove between first raised and described second projection, first raised, described the
Two raised and described groove formation square-wave-shaped structures.
Optionally, the described first pin width connected between muscle and second company muscle is 0.7mm ~ 0.9mm.
The present invention separately provides a kind of semiconductor lead frame, including：
Radiating area；
Slide glass area, for mounting semiconductor, the slide glass area connects the radiating area；
Pin, for the semiconductor devices being electrically connected in the slide glass area, both sides point of the pin close to the slide glass area
Ju You not be by the two raised square-wave-shaped structures formed with a groove, length direction of the described raised and described groove along the pin
It is arranged alternately successively, when the pin is welded with PCB printed circuit boards, scolding tin will be converged in the groove.
The present invention separately provides a kind of semiconductor lead frame rib cutting method, and the lead frame includes radiating area, slide glass area
With pin framework, the pin framework includes corner framework, multiple pins and each pipe of connection in the corner framework
The first of pin connects muscle, second company's muscle, and methods described includes：
First time rib cutting：Cut-out first connects muscle, after first company's muscle is cut, forms first respectively at the rib cutting of each pin both sides convex
Rise；
Plating：Electroplate to form a tin layers in the outer surface of pin framework；
Second of rib cutting：Cut-out second connects muscle, cuts after second company's muscle, it is convex to form second respectively at the rib cutting of each pin both sides
Rise, a groove is formed between the described first raised and described second projection, the coverage of the tin layers is from the pin
Groove starts to the pin part close to the slide glass area.
Optionally, before first time rib cutting, methods described also includes：
Plated film is carried out to the semiconductor lead frame, the outer surface of whole lead frame is formed an electrodeposited coating.
The technical scheme that embodiments of the invention are provided can include the following benefits：
The semiconductor encapsulation device of the present invention by forming by the two raised square waves formed with a groove respectively in the both sides of pin
Shape structure so that when pin is with PCB printed circuit plate welds, scolding tin is pinned in a groove, so that scolding tin by two projections
It can fully be contacted with pin, PCB printed circuit boards, and then strengthen the weld strength of pin and PCB printed circuit boards, riser
The welding performance and reliability of pin and pcb board.
The semiconductor lead frame of the present invention connects muscle by setting first to connect muscle and second so that connect muscle and second first
After even muscle is cut, first raised, the second raised and groove can be formed at the rib cutting of pin both sides, thereby, is partly led by this
The semiconductor encapsulation device that body lead frame is made passes through first raised and the second projection when with PCB printed circuit plate welds
Scolding tin is pinned in a groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthens pin
With the weld strength of PCB printed circuit boards, the welding performance and reliability of lifting pin and pcb board.
The semiconductor lead frame of the present invention thereby, is partly led by forming two raised and grooves in the both sides of pin by this
Scolding tin is pinned and existed when with PCB printed circuit plate weld by the semiconductor encapsulation device that body lead frame is made by two projections
In groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthen pin and PCB printed circuits
The welding performance and reliability of the weld strength of plate, lifting pin and pcb board.
The semiconductor lead frame rib cutting method of the present invention is walked by the method for first time rib cutting, plating and second of rib cutting
Suddenly, make to form first raised, the second raised and groove, thereby, the semiconductor leads after the rib cutting at the rib cutting of pin both sides
The semiconductor encapsulation device that framework is made is raised by scolding tin by the first projection and second when with PCB printed circuit plate welds
Pin in a groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthen pin and PCB prints
The welding performance and reliability of the weld strength of circuit board processed, lifting pin and pcb board.Also, second of rib cutting can make from
Groove starts to the pin part close to slide glass area to retain tin layers, so as to imitate the ground for avoiding pin exposed（For example, copper
Material）Directly welded with scolding tin, and then avoid causing the problem of welding performance is poor because of copper material and scolding tin poor compatibility.
It should be appreciated that the general description of the above and detailed description hereinafter are only exemplary, this can not be limited
Invention.
Brief description of the drawings
Accompanying drawing herein is merged in specification and constitutes the part of this specification, shows the implementation for meeting the present invention
Example, and in specification together for explaining principle of the invention.
Fig. 1 is the structural representation of semiconductor encapsulation device of the present invention.
Fig. 2 is the partial enlarged drawing in Tu1Zhong A areas.
Fig. 3 is the structural representation of semiconductor lead frame of the present invention.
Fig. 4 is semiconductor lead frame rib cutting method flow diagram of the invention.
Embodiment
In order to further illustrate the principle and structure of the present invention, the preferred embodiments of the present invention are carried out in conjunction with accompanying drawing detailed
Describe in detail bright.
As shown in figure 1, it is the structural representation of semiconductor encapsulation device of the present invention.It is outer that the packaging system 10 includes encapsulation
Shell 11, is coated on the semiconductor devices in package casing 11（It is not shown）With the exposed pin 12 outside package casing 11.
In Fig. 1, the semiconductor encapsulation device can be the packaging system of transistor, for example, triode packaging system, should
The packaging system of transistor has three pins, can be connected respectively the grid, source electrode and drain electrode of triode.But it is not limited
In this, the semiconductor encapsulation device can also be applied to the encapsulation of other semiconductor devices, for example, diode, integrated chip etc..Pipe
The quantity of pin can change according to the model of encapsulation semiconductor devices.
In the present embodiment, mainly illustrated by taking the semiconductor encapsulation device of three pins as an example.
As shown in figure 1, exposing three pins 12 outside package casing 11, the both sides of each pin 12 form square-wave-shaped respectively
Structure.With reference to shown in Fig. 2, it is the partial enlarged drawing in Tu1Zhong A areas.The both sides of each pin 12 respectively have two projections 121,
122 and form groove 123 between two projections 121,122, the length side of two projections 121,122 and groove 123 along pin 12
To being arranged alternately successively, square-wave-shaped structure is formed.
When pin 12 is inserted into PCB printed circuit boards（Printed Circuit Board）When, PCB printed circuit boards
Between two projections 121,122, one of projection 121 is located at PCB printed circuit boards upper surface, and another projection 122 is located at
The lower surface of PCB printed circuit boards, i.e. PCB printed circuit boards are located at the centre of groove 123.In subsequent welding process, weldering
Tin is flowed into groove 123 from the outer face of projection 121, and the scolding tin flowed into groove 123 is blocked in groove 123 by projection 122
In, prevent scolding tin to be lost in, scolding tin is fully contacted with circuit board, pin 12, and then strengthen pin 12 and PCB printed circuits
The welding performance and reliability of the weld strength of plate, lifting pin 12 and pcb board.
To reduce the area that pin 12 is occupied on PCB printed circuit boards, the width of pin 12 is cut down, subtracts its width L1
It is small to arrive 0.7mm-0.9mm.The raised height of the both sides of pin 12 is 0.075mm, therefore, and pin is in projection 121（Or projection 122）
The width L2 at place is two raised height and pin width sum, for example, for the mm of+0.075 mm of 0.075 mm+0.7=
0.85mm。
More excellent, to avoid the exposed ground of pin 12（For example, copper material）Directly welded with PCB printed circuit boards, in pipe
The outer surface of pin 12 coats one layer of tin layers that can be merged with scolding tin.
More preferably, during the rib cutting for the lead frame that tin layers formation is carried out when producing the semiconductor encapsulation device
（It is described in detail below）, i.e. the coverage of the tin layers is to extend close to package casing since the groove 123 of pin 12
11 pin part（L3 parts as shown in Figure 1）.The coverage of the tin layers can be prevented effectively from pin 12 and PCB and print electricity
The situation that copper material is directly welded with scolding tin during the plate weld of road, and then avoid and cause because of the poor compatibility between copper material and scolding tin
The problem of welding performance is poor.
The present invention separately provides a kind of semiconductor lead frame, as shown in figure 3, it is the knot of semiconductor lead frame of the present invention
Structure schematic diagram.The semiconductor lead frame 20 includes an at least radiating area 21, at least one for mounting semiconductor slide glass area
22 and at least one pin framework 23, the connection of slide glass area 22 radiating area 21, pin framework 23 is located at slide glass area 22 away from radiating area 21
Side.In figure 3, two radiating areas 21, Liang Ge slide glasses area 22 and a pin framework 23 are only shown（Liang Ge slide glasses area 22 is total to
With a pin framework 23, the number of pins needed for Liang Ge slide glasses area 22 is laid with pin framework 23）.But this is not limited to, should
Lead frame 20 may include multiple radiating areas 21, multiple slide glass areas 22 and multiple pin frameworks 23, herein not to radiating area 21, load
The quantity of section 22 and pin framework 23 is limited.In the present embodiment, mainly carried out by taking the lead frame of transistor as an example
Illustrate, for example, by taking the lead frame of triode as an example.The semiconductor lead frame with three pins is illustrated that in Fig. 3, can
To understand, the semiconductor lead frame that lead frame of the invention can also be applied to more than two pins or three pins, pin
Quantity can be changed according to the difference of semiconductor devices model.
As shown in figure 3, pin framework 23 includes corner framework 231, multiple pins 232 in corner framework 231 with
And the first of each pin 232 of connection connects muscle 233, second and connect muscle 234, first company's muscle 233 is close to slide glass area 22, the second company muscle
234, which are located at first, connects side of the muscle 233 away from slide glass area 22.
In addition, first to connect the pin width that muscle 233 and second connects between muscle 234 be 0.7mm ~ 0.9mm, except being provided with first
Even muscle 233 and second connects outside the pin part of muscle 234, and the width of pin 232 is also 0.7mm ~ 0.9mm.
After first, which connects muscle 233, is cut off, the first projection is formed at the rib cutting of the both sides of each pin 232 respectively, this first
Projection is the projection 121 shown in Fig. 2；After second, which connects muscle 234, is cut off, formed respectively at the rib cutting of each both sides of pin 232
Second is raised, the second raised projection 122 for shown in Fig. 2；First raised and the second raised length direction along pin 232
It is arranged at intervals, and a groove is formed between the first projection and the second projection, the groove can be the groove 123 shown in Fig. 2, first
Raised, the second projection and groove form square-wave-shaped structure as shown in Figure 2.That is, first company's muscle 233 and second connects muscle 234 and cut
Afterwards, the pin of lead frame 20 forms the mount structure of above-mentioned semiconductor encapsulation device 10.
Therefore, above-mentioned semiconductor encapsulation device 10 can be formed by the lead frame 20 in the present embodiment, i.e. in lead frame
After the completion of the rib cutting of frame 20, the chip of semiconductor devices, the ultra-fine plain conductor of recycling or electric conductivity are sticked in slide glass area 22
The bond pad of chip is connected to corresponding pin by resin, the encapsulation for being then made of resin slide glass area 22 and radiating area 21
Shell is packaged, and just can form above-mentioned semiconductor encapsulation device 10.
Further, the present invention separately provides a kind of semiconductor lead frame, and the lead frame is the lead frame after rib cutting, i.e.,
The lead frame is used for the encapsulation of individual chips, and it includes radiating area, the slide glass area for mounting semiconductor chip and extremely
Few two pins.Slide glass area is electrically connected with radiating area.Each pin has by two projections and one respectively close to the both sides in slide glass area
The square-wave-shaped structure of groove formation, those the raised and length directions of the groove along pin are arranged alternately successively so that the pin
When being welded with PCB printed circuit boards, scolding tin can be converged in the groove.
Semiconductor lead frame in the present embodiment can be used for forming above-mentioned semiconductor encapsulation device 10, specific to be formed
Process is as follows：
First stick the chip of semiconductor devices in slide glass area, recycle ultra-fine plain conductor or electroconductive resin by chip
Bond pad is connected with corresponding pin, is then packaged in slide glass area and radiating area with package casing, in this way, just can be formed
Above-mentioned semiconductor encapsulation device 10.
The present invention separately provides a kind of semiconductor lead frame rib cutting method, as shown in figure 4, it draws for the semiconductor of the present invention
Wire frame rib cutting method flow diagram.Semiconductor lead frame in the present embodiment is the lead frame 20 shown in above-mentioned Fig. 3, should
Lead frame includes radiating area, slide glass area and pin framework, and pin framework includes corner framework, multiple in the framework of corner
First company's muscle of pin and each pin of connection, second connect muscle.The method of the present invention is as follows：
Step S1, first time rib cutting：Cut-out first connects muscle, after first company's muscle is cut, is formed respectively at the rib cutting of each pin both sides
First is raised.
Before rib cutting step starts in first time, plated film is carried out to whole lead frame, makes the appearance of whole lead frame
Face forms the electrodeposited coating with protective effect.The electrodeposited coating can be alloy plated layer, titanium electrodeposited coating or other electrodeposition of metals.
After the completion of first time rib cutting, pin framework all exposes ground（For example, copper material）.
Step S2, plating：Electroplate to form a tin layers in the outer surface of pin framework；
After the completion of first time rib cutting, on the pin framework for expose ground plating formed a tin layers, in favor of follow-up pin with
The welding of PCB printed circuit boards.
After the completion of to be electroplated, the tin layers are toasted.
Step S3, second of rib cutting：Cut-out second connects muscle, cuts after second company's muscle, distinguishes at the rib cutting of each pin both sides
The second projection is formed, a groove is formed between the first projection and the second projection, the coverage of the tin layers is from the recessed of pin
Start at groove to the pin part close to slide glass area.
During second of rib cutting, the position that rib cutting starts connects at muscle for second, and rib cutting direction is to be connected from second at muscle to remote
From the cutting in the direction in slide glass area, therefore, the tin layers more than second company's muscle are not cut off, i.e. from the groove of pin
Place starts to the pin part close to slide glass area to remain with tin layers.On the other hand, also just because of since groove to close
The pin part in slide glass area remains with tin layers so that when pin and PCB printed circuit boards are welded, can be prevented effectively from pin
Exposed ground（For example, copper material）Directly welded with scolding tin, and then avoid causing weldability because of copper material and scolding tin poor compatibility
Can be poor the problem of.And the tin layers being retained on pin of the present invention can be merged effectively with scolding tin, and then improve welding performance.
What the semiconductor encapsulation device of the present invention was formed by being formed respectively in the both sides of pin by two projections and a groove
Square-wave-shaped structure so that when pin is with PCB printed circuit plate welds, scolding tin is pinned in a groove by two projections, so that
Scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthen the weld strength of pin and PCB printed circuit boards, be carried
The welding performance and reliability of riser pin and pcb board.
The semiconductor lead frame of the present invention connects muscle by setting first to connect muscle and second so that connect muscle and second first
After even muscle is cut, first raised, the second raised and groove can be formed at the rib cutting of pin both sides, thereby, is partly led by this
The semiconductor encapsulation device that body lead frame is made passes through first raised and the second projection when with PCB printed circuit plate welds
Scolding tin is pinned in a groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthens pin
With the weld strength of PCB printed circuit boards, the welding performance and reliability of lifting pin and pcb board.
The semiconductor lead frame of the present invention thereby, is partly led by forming two raised and grooves in the both sides of pin by this
Scolding tin is pinned and existed when with PCB printed circuit plate weld by the semiconductor encapsulation device that body lead frame is made by two projections
In groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthen pin and PCB printed circuits
The welding performance and reliability of the weld strength of plate, lifting pin and pcb board.
The semiconductor lead frame rib cutting method of the present invention is walked by the method for first time rib cutting, plating and second of rib cutting
Suddenly, make to form first raised, the second raised and groove, thereby, the semiconductor leads after the rib cutting at the rib cutting of pin both sides
The semiconductor encapsulation device that framework is made is raised by scolding tin by the first projection and second when with PCB printed circuit plate welds
Pin in a groove, so that scolding tin can be contacted fully with pin, PCB printed circuit boards, and then strengthen pin and PCB prints
The welding performance and reliability of the weld strength of circuit board processed, lifting pin and pcb board.Also, second of rib cutting can make from
Groove starts to the pin part close to slide glass area to retain tin layers, so as to imitate the ground for avoiding pin exposed（For example, copper
Material）Directly welded with scolding tin, and then avoid causing the problem of welding performance is poor because of copper material and scolding tin poor compatibility.
The preferable possible embodiments of the present invention are these are only, are not limited the scope of the invention, it is all with the present invention
Equivalent structure change made by specification and accompanying drawing content, is all contained in protection scope of the present invention.
Claims (10)
1. a kind of semiconductor encapsulation device, it is characterised in that including：
Package casing；
Semiconductor devices, is coated in the package casing；
Pin, for being electrically connected with the semiconductor devices, the pin is exposed outside the package casing；
The pin has by the two raised square-wave-shaped structures formed with a groove, institute respectively close to the both sides of the package casing
State length direction of the raised and described groove along the pin to be arranged alternately successively, the pin is carried out with PCB printed circuit boards
During welding, scolding tin will be converged in the groove.
2. semiconductor encapsulation device according to claim 1, it is characterised in that insert PCB printed circuits in the pin
After plate, the PCB printed circuit boards are stuck between two projection so that one of raised positioned at the PCB printed circuits
Plate upper surface, another projection is located at the lower surface of the PCB printed circuit boards.
3. semiconductor encapsulation device according to claim 1, it is characterised in that the width dimensions of the pin are 0.7mm-
0.9mm, the raised height is 0.075mm-0.1mm.
4. semiconductor encapsulation device according to claim 1, it is characterised in that the outer surface of the pin is coated with tin
Layer.
5. semiconductor encapsulation device according to claim 4, it is characterised in that the coverage of the tin layers is from described
The groove of pin starts to extend close to the pin part of the package casing.
6. a kind of semiconductor lead frame, it is characterised in that including：
An at least radiating area；
An at least slide glass area, for mounting semiconductor, the slide glass area connects the radiating area；
An at least pin framework, the pin framework includes corner framework, multiple pins in the corner framework and
Connect the first of each pin and connect muscle, second company's muscle, described first connects muscle close to the slide glass area, and described second connects muscle positioned at described
First connects side of the muscle away from the slide glass area；
After first company muscle is cut off, the first projection is formed at the rib cutting of each pin both sides respectively, second company muscle is cut
Have no progeny, form second raised at the rib cutting of each pin both sides respectively, the described first raised and described second projection is along the pin
Length direction be arranged at intervals, and form a groove between first raised and described second projection, first raised, described the
Two raised and described groove formation square-wave-shaped structures.
7. the framework of semiconductor devices according to claim 6, it is characterised in that described first, which connects muscle and described second, connects
Pin width between muscle is 0.7mm ~ 0.9mm.
8. a kind of semiconductor lead frame, it is characterised in that including：
Radiating area；
Slide glass area, for mounting semiconductor, the slide glass area connects the radiating area；
Pin, for the semiconductor devices being electrically connected in the slide glass area, both sides point of the pin close to the slide glass area
Ju You not be by the two raised square-wave-shaped structures formed with a groove, length direction of the described raised and described groove along the pin
It is arranged alternately successively, when the pin is welded with PCB printed circuit boards, scolding tin will be converged in the groove.
9. a kind of semiconductor lead frame rib cutting method, it is characterised in that the lead frame includes radiating area, slide glass area and pipe
Foot frame, the pin framework includes corner framework, the multiple pins and each pin of connection in the corner framework
First connects muscle, second company's muscle, and methods described includes：
First time rib cutting：Cut-out first connects muscle, after first company's muscle is cut, forms first respectively at the rib cutting of each pin both sides convex
Rise；
Plating：Electroplate to form a tin layers in the outer surface of pin framework；
Second of rib cutting：Cut-out second connects muscle, cuts after second company's muscle, it is convex to form second respectively at the rib cutting of each pin both sides
Rise, a groove is formed between the described first raised and described second projection, the coverage of the tin layers is from the pin
Groove starts to the pin part close to the slide glass area.
10. semiconductor lead frame rib cutting method according to claim 9, it is characterised in that before first time rib cutting,
Methods described also includes：
Plated film is carried out to the semiconductor lead frame, the outer surface of whole lead frame is formed an electrodeposited coating.
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