CN100547749C - Manufacture method with photoelectric chip encapsulating structure of control chip - Google Patents
Manufacture method with photoelectric chip encapsulating structure of control chip Download PDFInfo
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- CN100547749C CN100547749C CNB2005100708938A CN200510070893A CN100547749C CN 100547749 C CN100547749 C CN 100547749C CN B2005100708938 A CNB2005100708938 A CN B2005100708938A CN 200510070893 A CN200510070893 A CN 200510070893A CN 100547749 C CN100547749 C CN 100547749C
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- photoelectric
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 58
- 230000003287 optical effect Effects 0.000 claims abstract description 7
- 238000010276 construction Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 238000004381 surface treatment Methods 0.000 claims description 5
- 239000012780 transparent material Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 239000011889 copper foil Substances 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 9
- 238000009434 installation Methods 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
A kind of manufacture method with photoelectric chip encapsulating structure of control chip has the advantage that is easy to install and not disturbed by ambient light during printing opacity, can be used for advertisement plate or backlight, and can improve the rate of finished products and the quality of encapsulation.When using light-emitting diode or optical sensor Chip Packaging, be easy to the luminous demand that realizes that electronic chip is required, and more known photoelectric chip structure is more good, the setting of control chip does not influence luminous intensity.This method mainly is to utilize single or plural photoelectric chip to cooperate external base material and control chip, control chip is arranged on the bottom of photoelectric chip and joins with base material, thereby improve property easy for installation, and prevent that with outer frame device or grating extraneous light from disturbing.
Description
Technical field
The present invention relates to a kind of manufacture method, relate in particular to a kind of photoelectric chip encapsulating structure that control chip is arranged on the bottom of photoelectric chip, joins with base material with photoelectric chip encapsulating structure of control chip.
Background technology
In semiconductor packages industry, semiconductor packaging process is very important.Light-emitting diode (LED) and optical sensor packaging industrial also are accompanied by light, thin, short, the little and H.D requirement of electronic product and more show important, and the situation that has half share with conventional semiconductor package is arranged.The encapsulation technology of LED or semiconductor packages industry is constantly weeded out the old and bring forth the new especially, as photoelectric chip encapsulating structure BGA pin position, especially the pin position with control chip that meet surface installation technique (SMT) specification requirement need in its encapsulating structure more also to represent better base material; In like manner, its encapsulation back finished product brightness also is the important techniques requirement.
As use well-known greatly, after the Electronic Packaging technology is meant and completes from semiconductor integrated circuit and light-emitting diode, be contained among the on line structure with other electronic building brick mutual group, become an electronic product, to realize all process steps of a particular design function.The main function of Electronic Packaging has four, is respectively that electric energy transmits (Power Distribution), signal transmits (Signal Distribution), heat radiation (Heat Dissipation) and protection and supports (Protection and Support).As IC integrated circuit (IC) chip encapsulation commonly used and LED encapsulation.
As shown in Figure 1, it is the known photoelectric chip encapsulating structure with control chip, base material 30a adhesion photoelectric chip 20a and control chip 10a, and connect the base material internal circuit, again with the situation (can have several photoelectric chips 40a) of outside filling encapsulating structure 40a encapsulation and encapsulating, but the known photoelectric chip encapsulating structure with control chip 10a is when being installed in the flow process of base material 30a, has inconvenient mounting structure, prepare (material handling) nor be beneficial to material, be that photoelectric chip 40a and control chip 10a need be installed on respectively on the base material, operation is miscellaneous, and shared area is bigger, even influences luminous efficiency.When practical application, the horizontal area shared to packaging body also has negative effect.Therefore be necessary to develop a kind of encapsulating structure and method that is beneficial to fitting operation and can dwindles the horizontal area size, to satisfy requirement of actual application.
For now on the market major part need the light-emitting diode of base material, simplifying installation procedure and minification also be the important requirement of encapsulation process, and luminosity not disturbed by ambient light also be important functional requirement.
Main purpose of the present invention is to provide a kind of can the realization to have preferable luminous intensity and reduced size, and can make the installation process maintenance have the manufacture method of the photoelectric chip encapsulating structure of control chip easily, can be used for having luminous element (as light-emitting diode) or optical sensor with base material mutual encapsulation demand, realize low-cost high-quality packaging effect.
For realizing above-mentioned goal of the invention, the present invention adopts following technical scheme:
A kind of manufacture method with photoelectric chip encapsulating structure of control chip is characterized in that comprising the steps:
Two basic parts such as prepare control chip, photoelectric chip are formed preliminary precast construction, and this preliminary precast construction has the structure that photoelectric chip and control chip are connected;
Should be preliminary precast construction form the base material syndeton, this base material syndeton has the structure that preliminary precast construction is connected with base material with the headroom face of control chip; And
Be set to the outside filling encapsulating structure that transparent material constitutes,, and be located on this base material and this photoelectric chip, cover this photoelectric chip and control chip so that can appear or penetrate light source;
Wherein this base material has internal circuit.
The present invention can make the photoelectric chip encapsulating structure that is used for backlight, light fixture and advertisement billboard or electromagnetic wave field shape detector.It has the following advantages:
(1) new operation is provided with easily, and required newly adding is equipped with price and the neither height of specification requirement;
(2) control chip 10 be hidden in not can stray light electrical chip 20 luminous route place, volume is little, and is easy for installation;
(3) conventional package equipment is still available;
(4) luminous brightness is strong, can cooperate the conventional package operation.
Description of drawings
Below, the present invention is further illustrated with embodiment in conjunction with the accompanying drawings.
Fig. 1 is the schematic diagram of the known photoelectric chip encapsulating structure with control chip;
Fig. 2 is the described performing step schematic diagram with photoelectric chip encapsulating structure of control chip of the first embodiment of the present invention;
Fig. 3 is the described schematic diagram with photoelectric chip encapsulating structure of control chip of the first embodiment of the present invention;
Fig. 4 is the described schematic diagram with photoelectric chip packed part structure of control chip of the second embodiment of the present invention;
Fig. 5 is the described schematic diagram with photoelectric chip encapsulating structure of control chip of the third embodiment of the present invention;
Fig. 6 is the flow chart of the method for the invention.
Embodiment
Fig. 2 and Fig. 3 are the first embodiment of the present invention, and wherein base material 30 can be stepped construction, have front (being generally the face at photoelectric chip 20 places) and reverse side, have internal circuit and are distributed in wherein.Photoelectric chip 20 is arranged on these base material 30 fronts, joins with this control chip 10; This photoelectric chip 20 can be light-emitting diode or optical sensor, and its quantity can be a plurality of.As Fig. 2, shown in Figure 3, earlier photoelectric chip 20 and control chip 10 are joined and be arranged on again on this base material front, control chip 10 is arranged on the bottom of this photoelectric chip 20 and is connected with base material 30, and above-mentioned control chip 10 also is connected with this internal circuit simultaneously; Outside filling encapsulating structure 40 is constituted by transparent material, can appear or penetrate light source, be located at this base material with should (a plurality of) photoelectric chip on, and (a plurality of) photoelectric chip 20 is somebody's turn to do in covering; It can have the external circuits interface, is arranged on a side of this base material or a plurality of predetermined side and is connected with this internal circuit.This external circuits interface can connect near the side that internal circuit and base material 30 be positioned at base material to be installed in the middle of the specific electronic devices.Outside filling encapsulating structure 40 can appear light source, can be strong macromolecular material of light transmission such as resin.
Fig. 6 is the concrete steps of manufacture method of the present invention:
S101: two basic parts such as prepare control chip 10, photoelectric chip 20 are formed preliminary precast construction (promptly as shown in Figure 2), and wherein preliminary precast construction is the structure that photoelectric chip 20 and control chip 10 are connected; S103: this preliminary precast construction is formed base material 30 syndetons (i.e. structure before the not encapsulating as shown in Figure 3), wherein the base material 30 syndetons structure that to be preliminary precast construction be connected with base material 30 with the headroom face of control chip 10; And S105: outside filling encapsulating structure 40 is set at last,, can appears or penetrate light source, be located on this base material 30 and this photoelectric chip 20, and cover this photoelectric chip 20 and control chip 10 by transparent material is constituted; Wherein base material 30 has internal circuit.
Below, with reference to figure 4 and Fig. 5, change describing the thin portion that other embodiments of the invention disclosed in detail.Wherein, this base material 30 can be the superimposed structure of multilayer material.This photoelectric chip 10 can be light-emitting diode or optical sensor.Outside filling encapsulating structure 40 can be polymer composite and constitutes, and can have phosphor powder and be distributed in wherein; This phosphor powder can be the mixing of gold-tinted phosphor powder or green glow phosphor powder or aforementioned two kinds of phosphor powders.This base material 30 can be the copper foil circuit panel material and constitutes.Outside filling encapsulating structure 40 can have reflection box 50 and be located at the edge, so that up assemble luminous.Outside filling encapsulating structure 40 also can have surface treatment; Its surface treatment can be grating or filter coating are set, so that filter or arrangement light.This photoelectric chip 20 can be a plurality of, and this plural number photoelectric chip 20 can be arranged as rectangular or totem pole, as trade mark or advertising thing shape.In addition, can to blend together light be white light to this plural number photoelectric chip 20; The present invention also can further have external circuits interface 35, is arranged on a side of this base material 30 or a plurality of predetermined side or the reverse side of base material 30 and is connected with this internal circuit.More can further comprise a step, promptly before this outside filling encapsulating structure is set, this control chip 10 or this photoelectric chip 20 are connected with the internal circuit of this base material 30 by metal wire 60 (as shown in Figure 4); Wherein this control chip 10 or this photoelectric chip 20 can adopt the eutectic structure of metal to metal to be connected with the internal circuit of this base material 30.
The present invention changes traditional 20 encapsulating structures of the photoelectric chip with control chip 10 into control chip 10 is hidden in not luminous route that can stray light electrical chip 20 position, can make things convenient for the assembling of electronic component; A side or a plurality of predetermined side of external circuits interface in a rectangle base material 30 is set; Increase as shown in Figure 5 reflection box 50 or surface treatment such as grating or filter coating, so that optical filtering or arrangement light, make be improved property easy for installation and strengthen luminous intensity of this encapsulating structure, and it is low that cost is set, little to traditional light-emitting diode chip for backlight unit packing producing line influence.
The present invention with control chip 10 be hidden in not can stray light electrical chip 20 luminous route, its production equipment is not high price or the equipment that is difficult for obtaining, therefore realizes that ratio of the present invention is easier to.And the matrix structure of manufacturing of the present invention is taken into account luminous intensity and easy for installation.Simultaneously, the present invention is little to the process sequence influence of conventional package operation, can incorporate fully in the middle of the old packaging process, and old encapsulation board does not need significantly to revise.
Claims (16)
1. the manufacture method with photoelectric chip encapsulating structure of control chip is characterized in that comprising the steps:
Preparation comprises that two basic parts of control chip, photoelectric chip form preliminary precast construction, and this preliminary precast construction has the structure that photoelectric chip and control chip are connected;
Should be preliminary precast construction form the base material syndeton, this base material syndeton has the structure that preliminary precast construction is connected with base material with the headroom face of control chip; And
Be set to the outside filling encapsulating structure that transparent material constitutes,, and be located on this base material and this photoelectric chip, cover this photoelectric chip and control chip so that can appear or penetrate light source;
Wherein this base material has internal circuit.
2. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 1 is characterized in that:
This base material is the structure that multilayer material coincides.
3. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 1 is characterized in that:
This photoelectric chip is light-emitting diode or optical sensor.
4. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 1 is characterized in that:
This outside filling encapsulating structure is constituted by polymer composite.
5. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 1 is characterized in that:
This outside filling encapsulating structure has the fluorescent material that is distributed in wherein.
6. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 5 is characterized in that:
This fluorescent material is the mixing of gold-tinted fluorescent material or green light fluorescent powder or aforementioned two kinds of fluorescent material.
7. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 1 is characterized in that:
This base material is constituted by the copper foil circuit panel material.
8. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 1 is characterized in that:
This outside filling encapsulating structure has the reflection box of being located at the edge.
9. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 1 is characterized in that:
This outside filling encapsulating structure has surface treatments.
10. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 9 is characterized in that:
The surface treatment of this outside filling encapsulating structure is for being provided with grating or filter coating.
11. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 1 is characterized in that:
This photoelectric chip is a plurality of.
12. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 11 is characterized in that:
This plural number photoelectric chip and be rectangular or totem pole.
13. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 11 is characterized in that:
It is white light that this plural number photoelectric chip blendes together light.
14. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 11 is characterized in that:
This base material has the external circuits interface, is arranged on a side of this base material or a plurality of predetermined side or the reverse side of base material and is connected with this internal circuit.
15. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 1 is characterized in that further comprising a step:
Before this outside filling encapsulating structure is set, this control chip or this photoelectric chip are connected with the internal circuit of this base material by metal wire.
16. the manufacture method with photoelectric chip encapsulating structure of control chip as claimed in claim 1 or 2 is characterized in that:
This control chip or this photoelectric chip adopt the eutectic structure of metal to metal to be connected with the internal circuit of this base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100708938A CN100547749C (en) | 2005-05-20 | 2005-05-20 | Manufacture method with photoelectric chip encapsulating structure of control chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100708938A CN100547749C (en) | 2005-05-20 | 2005-05-20 | Manufacture method with photoelectric chip encapsulating structure of control chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1866484A CN1866484A (en) | 2006-11-22 |
| CN100547749C true CN100547749C (en) | 2009-10-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100708938A Expired - Fee Related CN100547749C (en) | 2005-05-20 | 2005-05-20 | Manufacture method with photoelectric chip encapsulating structure of control chip |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005509B (en) * | 2009-04-17 | 2013-06-05 | 深圳市中庆微科技开发有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| CN106898602B (en) * | 2017-04-28 | 2023-08-04 | 福建祥云光电科技有限公司 | LED module BGA package fixing structure |
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| CN1866484A (en) | 2006-11-22 |
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Granted publication date: 20091007 Termination date: 20120520 |