CN103811633B - High-reliability light emitting diode support - Google Patents
High-reliability light emitting diode support Download PDFInfo
- Publication number
- CN103811633B CN103811633B CN201310750531.8A CN201310750531A CN103811633B CN 103811633 B CN103811633 B CN 103811633B CN 201310750531 A CN201310750531 A CN 201310750531A CN 103811633 B CN103811633 B CN 103811633B
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- Prior art keywords
- groove
- lead frame
- gap
- positive electrode
- electrode framework
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
The invention provides a high-reliability light emitting diode support which comprises a lead frame and a base arranged on the lead frame, wherein a reflecting cavity is defined by the lead frame and the base, the lead frame comprises a positive electrode frame and a negative electrode frame, a gap is formed between the positive electrode frame and the negative electrode frame, grooves communicated with the gap are recessed at the edges, near the gap, of the positive electrode frame and the negative electrode frame, an insulating component is arranged in the gap and the grooves, the bottom surface of each groove is provided with a rough part which extends in the length direction of the groove and is subjected to chemical corrosion treatment previously, pattern structures are arranged in at least partial regions of the bottom surfaces of the positive electrode frame and the negative electrode frame, and the base and the insulating component are made of a thermosetting resin. In the support, the grooves are provided and roughened so that the reliability of the support is improved, and due to the formation of the pattern structures, the heat dissipation efficiency of the support is improved and a three-dimensional heat dissipation way is established.
Description
Technical field
The present invention relates to luminescent device, and in particular to a kind of high reliability LED support.
Background technology
LED device due to luminous efficiency height, small volume, it is pollution-free the features such as, be just widely used in electricity
Depending on fields such as backlight, graphic display screen, decorative lightings.With the reduction of the raw material prices such as chip, encapsulation glue, support, core
The continuous improvement of piece luminous efficiency, light emitting diode has begun to enter the room lighting fields such as commercial lighting, lighting of home.
LED device generally includes support and luminescence chip, and support includes pedestal and lead frame, and both surround
Catoptric arrangement, with a reflecting and concave-cavity, i.e. located at the bottom of reflecting and concave-cavity, pedestal generally adopts insulating materials system to luminescence chip
Into lead frame includes positive and negative electrode.The hang-up that the LED device of this structure often is faced with is sealing
Problem.Because needing insulation gap between positive and negative electrode, and to improve the reflective function of lead frame, generally electroplated
Process, form bright coating, even if being filled therebetween using insulating materials, sealing effectiveness is not good between insulating materials and coating, outward
The junction between insulating materials and metal material such as moisture, oxygen, the impurity on boundary is penetrated into, and the source of seepage is often become at this
Head, use time one is grown, and light will be caused to send out the parts such as chip, gold thread and be affected, so as to cause LED device reliability
Property reduce.On the other hand, radiating is always a great problem that LED device is faced.And both there is higher reliability
It is again another hang-up that current LED device is faced with excellent heat dispersion performance.
The content of the invention
In view of this, there is provided the high reliability LED support of a kind of reliability height and good heat dissipation effect.
A kind of high reliability LED support, it includes lead frame and the pedestal on lead frame, described
Lead frame and pedestal limit a reflecting and concave-cavity, and the lead frame includes positive electrode framework and negative electrode framework, it is described just
There is gap, the positive electrode framework and negative electrode framework are recessed at the edge near gap between electrode framework and negative electrode framework
Be provided with the groove communicated with gap, be filled with insulating element in the gap and groove, the groove bottom of the groove have along
The bottom surface of the coarse part that flute length direction extends and processes through chemical attack, the positive electrode framework and negative electrode framework is at least
Subregion has patterning, and the pedestal and insulating element are made up of thermosetting resin.
Further, subregion of the bottom surface of the positive electrode framework and negative electrode framework relative to reflecting and concave-cavity bottom
Or Zone Full has patterning.
Further, the whole bottom surface of the positive electrode framework and negative electrode framework has patterning.
Further, the patterning is any one in multiple micro groove structures, miniature salient point array, pattern structure
Or two or more combinations.
Further, the area of the lead frame bottom surface is more than 1.5 times of upper surface area.
Further, the groove extends through the second side relative with first side by the first side of lead frame,
The groove is caved inward near the edge in gap by lead frame bottom surface and is formed, the bottom surface of the lead frame and described first
Side intersection indent has the first side groove communicated with groove, the bottom surface of the lead frame and the second side intersection
Indent has the second side groove communicated with groove.
Further, the groove extends through the second side relative with first side by the first side of lead frame,
The groove is caved inward near the edge in gap by lead frame upper surface and is formed, the upper surface of the lead frame with it is described
First side intersection indent has the first side groove communicated with groove, the upper surface of the lead frame and the second side
Intersection indent has the second side groove communicated with groove.
Further, first side groove extends along whole first side direction, and second side groove is along whole
Individual second side direction extends, and the groove bottom of first side groove and the second side groove has along the extension of flute length direction and Jing
Cross the coarse part of chemical attack process.
Further, insulating barrier, the pedestal, insulation division are separately filled with first side groove and the second side groove
Part and insulating barrier are the integrated formed structure by made by thermosetting epoxy resin.
Further, the lead frame upper surface includes being exposed to die bond face and and pedestal of the reflecting and concave-cavity for die bond
With reference to faying face, the faying face at least formed slightly around the annular section of reflecting and concave-cavity bottom through chemical attack process
Rough part.
In above-mentioned high reliability LED support, first, the positive electrode framework and negative electrode framework are between
The edge of gap is arranged with the groove communicated with gap, increases the difficulty that outside moisture, oxygen, impurity enter internal stent.And,
The groove bottom of groove has the coarse part processed through chemical attack at least along flute length direction, has both increased insulating element and frame
The adhesion of frame, can be significantly increased sealing property, the reliability and service life of lifting bracket again.Secondly, in positive electrode frame
At least part of region in bottom surface of frame and negative electrode framework has patterning, greatly increases the surface area of bottom surface, such as passes through heat conduction
When glue is combined with radiating element, with reference to even closer, thermal resistance can be greatly reduced, improve radiating efficiency.Further, pedestal is heat
Hardening resin pedestal, thermosetting resin has more preferable heat-sinking capability than traditional material such as thermoplastic resin.Due to hot hard
The property changed resin thermal conductivity is good, and it is filled in groove and gap and improves conjugation by roughening, i.e., in reflection as pedestal
Cavity（Namely chip）Surrounding forms a good heat radiating body, and framework bottom face has patterning, and in bottom surface radiating effect is strengthened
Rate, thus, the sinking path of whole pedestal and lead frame one three-dimensional of composition, compared to existing support, above-mentioned support
Radiating efficiency will be multiplied so that support of the present invention both have high reliability, while also have very high heat dispersion.
Description of the drawings
Fig. 1 is the schematic diagram of the stereochemical structure of the high reliability LED support of the embodiment of the present invention one.
Fig. 2 is the cross-sectional view of the high reliability LED support of the embodiment of the present invention one.
Fig. 3 is the overlooking the structure diagram of the high reliability LED support of the embodiment of the present invention one.
Fig. 4 is the bottom surface structure schematic diagram of the high reliability LED support of the embodiment of the present invention one.
Fig. 5 is the lead frame bottom surface view stereo structural representation in the LED support of Fig. 1.
Fig. 6 is the lead frame overlooking the structure diagram in the LED support of Fig. 1.
Fig. 7 is the lead frame bottom surface view stereo structure of the high reliability LED support of the embodiment of the present invention two
Schematic diagram.
Specific embodiment
Below with reference to the drawings and the specific embodiments, the present invention is described in detail.
Fig. 1 to Fig. 6 is referred to, the high reliability LED support 100 of the embodiment of the present invention one is shown, it includes drawing
Wire frame 2 and the pedestal on lead frame 21, lead frame 2 and pedestal 1 limit a reflecting and concave-cavity 4, and lead frame 2 is wrapped
Positive electrode framework 21 and negative electrode framework 22 are included, there is gap 24, positive electrode between positive electrode framework 21 and negative electrode framework 22
Framework 21 and negative electrode framework 22 are arranged with the groove 25 communicated with gap 24, gap 24 and groove at the edge near gap 24
Insulating element 26 is filled with 25, the groove bottom of groove 25 has along the extension of flute length direction and through the thick of chemical attack process
Rough part, at least part of region in the bottom surface of positive electrode framework 21 and negative electrode framework 22 has patterning 213,223, pedestal 1
It is made up of thermosetting resin with insulating element 26.
Specifically, subregion of the bottom surface of positive electrode framework 21 and negative electrode framework 22 relative to the bottom of reflecting and concave-cavity 4
Or Zone Full has patterning 213,223.Further, as shown in Figures 4 and 5, positive electrode framework 21 and negative electrode framework
22 whole bottom surface all has patterning 213,223.Specifically, patterning 213,223 is multiple micro groove structures, miniature convex
Any one in lattice array, pattern structure or two or more combinations.In structure shown in Figure 4 and 5, patterning 213,
223 is multiple micro groove structures.Preferably, the base area of lead frame 2 is more than 1.5 times of upper surface area.Lead frame
The area of bottom surface is more than 1.5 times of upper surface area, further to improve the area of dissipation of bottom surface.Specifically can be by arranging figure
Distribution, size of case structure etc. are reaching the lifting of base area.The depth or height of patterning can be that lead frame 2 is whole
The 1/3 of body thickness.Therefore, the design of the bottom surface of lead frame 2 is to increase its area contacted with thermal component, pattern
It can be the structure of any concave or convex or concavo-convex combination, however it is not limited to the specific example of the present embodiment.
As shown in figure 5, groove 25 extends through second relative with first side 201 by the first side 201 of lead frame 2
Side 202, groove 25 is caved inward by the bottom surface of lead frame 2 near the edge in gap 24 or is leaned on by the upper surface of lead frame 2
The edge in nearly gap 24 caves inward to be formed, bottom surface or upper surface and the intersection indent of first side 201 of lead frame 2 have with
The first side groove 203 that groove 25 is communicated, the bottom surface or upper surface of lead frame 2 and the intersection indent of second side 202 have with
The second side groove 204 that groove 25 is communicated.In figure so that groove 25 is formed at the bottom surface of lead frame 2 as an example, two side grooves
203rd, 204 bottom surfaces for being formed at lead frame 2 and first, second side 201,202 intersections.When groove 25 is formed at drawing
During 2 upper surface of wire frame, it is inverted equivalent to groove, structure is substantially similar, can understand from figure, will not be described here.
Further, as shown in figure 5, the first side groove 203 extends along the direction of whole first side 201, the second side groove
204 extend along the direction of whole second side 202.The groove bottom of groove 25 has along the extension of flute length direction and rotten through chemistry
The groove bottom of the coarse part that erosion is processed, the first side groove 203 and the second side groove 204 has along the extension of flute length direction and Jing
Cross the coarse part of chemical attack process, i.e. as long as the side groove 203 and 204 of groove 25 and first, second sets in flute length direction
There is the coarse part processed through chemical attack, such as strip coarse part can stop that outside moisture, oxygen, impurity are entered
Internal stent.It is all coarse part that diagram is the bottom surface of the side groove 203 and 204 of whole groove 25 and first, second, can with raising
By property.
Further, insulating barrier, pedestal 1, insulation division are separately filled with the first side groove 203 and the second side groove 204
Part 26 and insulating barrier are the integrated formed structure by made by thermosetting epoxy resin, and can be with lead frame 2 be mould
Molded structure, the structure is easy to shaping, the stabilized structure of support 100 can be made again, moreover it is possible to improve heat dispersion.As shown in Fig. 2 base
Seat 1 includes being covered in the top base 11 of the faying face of lead frame 2 and is coated on the bottom base 12 of the side of lead frame 2.Bottom base
12 are connected with insulating element 26 and insulating barrier.
As shown in fig. 6, the upper surface of lead frame 2 includes being exposed to die bond face 211 and and base of the reflecting and concave-cavity 4 for die bond
The faying face 221 that seat 1 is combined, faying face 221 is at least in the annular section 27 around the bottom of reflecting and concave-cavity 4 at chemical attack
Reason forms coarse part.It is of course also possible to be all to be processed into rough surface in whole faying face 221, so as to the external world is significantly greatly increased
Moisture, oxygen, impurity enter the difficulty of internal stent, strengthen the associativity of pedestal 1 and lead frame 2, improve the reliability of support
Property and heat dispersion.The surface portion of the combination of pedestal 1 and lead frame 2 has the projection matched with groove 27 or puts down
Face, further to improve outside moisture, oxygen, impurity into the difficulty of internal stent.
Fig. 7 is referred to, the lead frame 2 of the high reliability LED support of the embodiment of the present invention two is shown, implemented
The support of example two is essentially identical with the supporting structure of embodiment one, and identical label represents identical element in Fig. 7 and Fig. 1-6,
Two embodiment differences are the bottom surface structure of lead frame 2.In the present embodiment two, the bottom surface pattern knot of lead frame 2
Structure 213,223 is multiple miniature bump array structures.Salient point it is highly preferred for the 1/3 of the integral thickness of framework 2.Miniature salient point battle array
The density of row bumps is more intensive better.
The high reliability LED support of the embodiment of the present invention three is essentially identical with the supporting structure of embodiment one, and two
Individual embodiment difference is the bottom surface structure of lead frame 2.In the present embodiment three, the bottom surface patterning of lead frame 2
For decorative pattern.Decorative pattern can be internal or female screw or positive line, it is illustrated that for bellows-shaped, can also be triangle, the cross of depression or projection
Deng texture.
In above-mentioned high reliability LED support 100, first, positive electrode framework 21 and negative electrode framework 22 are close
The edge in gap 24 is arranged with the groove 25 communicated with gap 24, increases outside moisture, oxygen, impurity and enters inside support 100
Difficulty.And, the groove bottom of groove 25 has the coarse part processed through chemical attack at least along flute length direction, both increases
Plus the adhesion of insulating element 26 and framework 2, can be significantly increased sealing property again, the reliability of lifting bracket 100 and use
Life-span.Secondly, there is patterning 213,223 at least part of region in the bottom surface of positive electrode framework 21 and negative electrode framework 22,
The surface area of bottom surface is greatly increased, when such as being combined with radiating element by heat-conducting glue, with reference to even closer, heat can be greatly reduced
Resistance, improves radiating efficiency.Further, pedestal 1 is thermosetting resin pedestal, and thermosetting resin is than traditional material such as thermoplastic
Property resin has more preferable heat-sinking capability.Due to thermosetting resin thermal conductivity it is good, its as pedestal, be filled in groove 25 and
Gap 24 and by roughening improve conjugation, i.e., in reflecting and concave-cavity 4（Namely chip）Surrounding one good heat radiating body of formation, and frame
The bottom surface of frame 2 has patterning 213,223, and in bottom surface radiating efficiency is strengthened, and thus, whole pedestal 1 and lead frame 2 constitute one
The sinking path of individual three-dimensional, compared to existing support, the radiating efficiency of above-mentioned support 100 will be multiplied, rather than letter
Single Overlay, while reliability is improved, the lifting that the radiating efficiency of support will have a matter.
It should be noted that above-mentioned embodiment is the invention is not limited in, and creative spirit of the invention, this area
Technical staff can also make other changes, and these changes done according to the creative spirit of the present invention should all be included in this
It is bright it is claimed within the scope of.
Claims (7)
1. a kind of high reliability LED support, it includes lead frame and the pedestal on lead frame, described to draw
Wire frame and pedestal limit a reflecting and concave-cavity, and the lead frame includes positive electrode framework and negative electrode framework, and its feature exists
In, there is gap between the positive electrode framework and negative electrode framework, the positive electrode framework and negative electrode framework are between
The edge of gap is arranged with the groove communicated with gap, and the groove is extended through and first side phase by the first side of lead frame
To second side, insulating element is filled with the gap and groove, the groove bottom of the groove has along flute length direction
At least part of region in bottom surface of the coarse part for extending and processing through chemical attack, the positive electrode framework and negative electrode framework
With patterning；
Wherein, the groove is to be caved inward to be formed near the edge in gap by lead frame bottom surface, the bottom of the lead frame
Face has the first side groove communicated with groove, the bottom surface of the lead frame and described with first side intersection indent
Two side faces intersection indent has the second side groove communicated with groove；Or
The groove is to be caved inward to be formed near the edge in gap by lead frame upper surface, the upper surface of the lead frame
There are the first side groove communicated with groove, the upper surface of the lead frame and described with first side intersection indent
Two side faces intersection indent has the second side groove communicated with groove；
Insulating barrier is separately filled with first side groove and the second side groove, the pedestal, insulating element and insulating barrier are
The integrated formed structure by made by thermosetting epoxy resin.
2. high reliability LED support as claimed in claim 1, it is characterised in that the positive electrode framework and negative electricity
The bottom surface of pole framework relative to reflecting and concave-cavity bottom subregion or Zone Full there is patterning.
3. high reliability LED support as claimed in claim 1, it is characterised in that the positive electrode framework and negative electricity
The whole bottom surface of pole framework has patterning.
4. high reliability LED support as claimed in claim 1, it is characterised in that the patterning is multiple micro-
Any one in slot structure, miniature salient point array, pattern structure or two or more combinations.
5. high reliability LED support as claimed in claim 4, it is characterised in that the face of the lead frame bottom surface
Product is more than 1.5 times of upper surface area.
6. high reliability LED support as claimed in claim 1, it is characterised in that first side groove is along whole
Individual first side direction extends, and second side groove extends along whole second side direction, first side groove and the
The groove bottom of two side grooves has along flute length direction the coarse part for extending and processing through chemical attack.
7. high reliability LED support as claimed in claim 1, it is characterised in that the lead frame upper table bread
Include and be exposed to the die bond face that reflecting and concave-cavity is used for die bond and the faying face combined with pedestal, the faying face is at least around reflection
The annular section of cavity bottom forms coarse part through chemical attack process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310750531.8A CN103811633B (en) | 2013-12-31 | 2013-12-31 | High-reliability light emitting diode support |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310750531.8A CN103811633B (en) | 2013-12-31 | 2013-12-31 | High-reliability light emitting diode support |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103811633A CN103811633A (en) | 2014-05-21 |
| CN103811633B true CN103811633B (en) | 2017-05-10 |
Family
ID=50708107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310750531.8A Active CN103811633B (en) | 2013-12-31 | 2013-12-31 | High-reliability light emitting diode support |
Country Status (1)
| Country | Link |
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| CN (1) | CN103811633B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538538A (en) * | 2014-12-24 | 2015-04-22 | 广州市鸿利光电股份有限公司 | Flip chip support and LED packaging process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1396667A (en) * | 2001-07-16 | 2003-02-12 | 诠兴开发科技股份有限公司 | Package of LED |
| CN102194978A (en) * | 2010-02-17 | 2011-09-21 | Lg伊诺特有限公司 | Light emitting device and light unit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090039261A (en) * | 2007-10-18 | 2009-04-22 | 삼성전기주식회사 | Light emitting diode package |
-
2013
- 2013-12-31 CN CN201310750531.8A patent/CN103811633B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1396667A (en) * | 2001-07-16 | 2003-02-12 | 诠兴开发科技股份有限公司 | Package of LED |
| CN102194978A (en) * | 2010-02-17 | 2011-09-21 | Lg伊诺特有限公司 | Light emitting device and light unit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103811633A (en) | 2014-05-21 |
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Address after: Baoan District Shiyan street Shenzhen city Guangdong province 518100 White Pine Road in Yuntai science and Technology Industrial Park, building 8, floor 9, 6 Applicant after: SHENZHEN SMART SEMICONDUCTOR Ltd. Address before: Baoan District Shiyan street Shenzhen city Guangdong province 518100 White Pine Road in Yuntai science and Technology Industrial Park, building 8, floor 9, 6 Applicant before: SHENZHEN SMALITE OPTOELECTRONICS Co.,Ltd. |
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Effective date of registration: 20170419 Address after: 330000 Jiangxi Airport Economic Zone, small and medium enterprises in the first floor of Industrial Park Office Applicant after: JIANGXI HONGLI PHOTOELECTRIC Co.,Ltd. Address before: Baoan District Shiyan street Shenzhen city Guangdong province 518100 White Pine Road in Yuntai science and Technology Industrial Park, building 8, floor 9, 6 Applicant before: SHENZHEN SMART SEMICONDUCTOR Ltd. |
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