CN201367495Y - Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace - Google Patents
Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace Download PDFInfo
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- CN201367495Y CN201367495Y CNU200920088846XU CN200920088846U CN201367495Y CN 201367495 Y CN201367495 Y CN 201367495Y CN U200920088846X U CNU200920088846X U CN U200920088846XU CN 200920088846 U CN200920088846 U CN 200920088846U CN 201367495 Y CN201367495 Y CN 201367495Y
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- single crystal
- gallium arsenide
- growing furnace
- graphite
- battery lead
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Abstract
The utility model discloses a medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace and relates to a gallium arsenide single crystal growing device, which comprises a seed crystal rod and graphite heaters, wherein the barrel-shaped graphite heaters in sleeve joint are arranged at the periphery of the seed crystal rod, a plate electrode is arranged at the joint between two adjacent graphite heaters, and the plate electrodes are connected with electrode rods. Each graphite heater is provided with two plate electrodes and two electrode rods. The number of the graphite heaters is at least two. The medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace has simple structure and can produce high-quality gallium arsenide single crystal with a high yield.
Description
Technical field:
The utility model relates to the arsenide gallium monocrystal growing apparatus, particularly a kind of middle cold wall semi-insulating GaAs monocrystal growing furnace of pressing.
Background technology:
Arsenide gallium monocrystal is to produce with the hot wall stove of executive level Bridgman method, vertical bridgman method or VGF technology at present, because hot wall arsenide gallium monocrystal growth technique must carry out in airtight silica tube, so in the high temperature GaAs melt, just unavoidably mix sila matter, influence non-resistivity of mixing the semi-insulating GaAs monocrystalline, parameters such as carrier concentration, thus made a difficult problem in the semi-insulating GaAs non-the mixing of growth for the hot wall stove; Hydraulic seal vertical pulling method monocrystalline growing process adopts the non-semi-insulating GaAs monocrystalline of mixing of cold hearth growth, can avoid mixing of sila matter, but the monocrystalline dislocation desity that grows is excessive, has limited hydraulic seal vertical pulling equipment to a great extent in the gallium arsenide Application for Field.
Summary of the invention:
Task of the present utility model is a kind of cold wall semi-insulating GaAs of middle pressure monocrystal growing furnace of avoiding the production arsenide gallium monocrystal that impurity mixes of design.
Task of the present utility model is finished like this, the cold wall semi-insulating GaAs monocrystal growing furnace of middle pressure, it comprises seed rod, graphite heater, it is characterized in that: a plurality of belled tubbiness graphite heaters are installed around seed rod, the junction of two adjacent graphite heaters is equipped with battery lead plate, and battery lead plate is connected with battery lead rod.Each graphite heater is furnished with two battery lead plates and two battery lead rods.Described a plurality of graphite heater is at least 2.
The utility model is simple in structure, produces high-quality arsenide gallium monocrystal yield rate height.
Description of drawings:
Accompanying drawing is a structural representation of the present utility model.
Embodiment:
Describe embodiment in conjunction with the accompanying drawings in detail, task of the present utility model is finished like this, it comprises seed rod 1, graphite heater 3, a plurality of belled tubbiness graphite heaters are installed around seed rod, the junction of two adjacent graphite heaters is equipped with battery lead plate 4, and battery lead plate is connected with battery lead rod 2.Each graphite heater is furnished with two battery lead plates and two battery lead rods.Described a plurality of graphite heater is at least two.After battery lead rod energising, by battery lead plate conducting graphite heater, graphite heater is heated up, to be positioned at seed rod on crucible heat.Of the present utility model simple in structure, can produce high-quality arsenide gallium monocrystal.
Claims (3)
1, the cold wall semi-insulating GaAs of middle pressure monocrystal growing furnace, it comprises seed rod, graphite heater, it is characterized in that: around seed rod a plurality of belled tubbiness graphite heaters are installed, the junction of two adjacent graphite heaters is equipped with battery lead plate, and battery lead plate is connected with battery lead rod.
2, the middle cold wall semi-insulating GaAs monocrystal growing furnace of pressing as claimed in claim 1, it is characterized in that: each graphite heater is furnished with two battery lead plates and two battery lead rods.
3, the middle cold wall semi-insulating GaAs monocrystal growing furnace of pressing as claimed in claim 1, it is characterized in that: described a plurality of graphite heaters are at least 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200920088846XU CN201367495Y (en) | 2009-03-09 | 2009-03-09 | Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200920088846XU CN201367495Y (en) | 2009-03-09 | 2009-03-09 | Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201367495Y true CN201367495Y (en) | 2009-12-23 |
Family
ID=41486388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200920088846XU Expired - Lifetime CN201367495Y (en) | 2009-03-09 | 2009-03-09 | Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201367495Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103526279A (en) * | 2013-10-25 | 2014-01-22 | 北京华进创威电子有限公司 | Sleeve type graphite heater used for GaAs (gallium arsenide) crystal growth |
| CN110565168A (en) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | Furnace body temperature-adjustable cold wall single crystal furnace and gallium arsenide crystal growth method |
-
2009
- 2009-03-09 CN CNU200920088846XU patent/CN201367495Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103526279A (en) * | 2013-10-25 | 2014-01-22 | 北京华进创威电子有限公司 | Sleeve type graphite heater used for GaAs (gallium arsenide) crystal growth |
| CN110565168A (en) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | Furnace body temperature-adjustable cold wall single crystal furnace and gallium arsenide crystal growth method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Beijing Huajin Chuangwei Electronics Co., Ltd. Assignor: Xiangxiang Shenzhou Crystal Technology Development Co., Ltd. Contract record no.: 2012990000378 Denomination of utility model: Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace Granted publication date: 20091223 License type: Exclusive License Record date: 20120601 |
|
| PP01 | Preservation of patent right |
Effective date of registration: 20180814 Granted publication date: 20091223 |
|
| PP01 | Preservation of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20091223 |
|
| CX01 | Expiry of patent term | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20190309 Granted publication date: 20091223 |
|
| PD01 | Discharge of preservation of patent |