CN201367495Y - Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace - Google Patents
Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace Download PDFInfo
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- CN201367495Y CN201367495Y CNU200920088846XU CN200920088846U CN201367495Y CN 201367495 Y CN201367495 Y CN 201367495Y CN U200920088846X U CNU200920088846X U CN U200920088846XU CN 200920088846 U CN200920088846 U CN 200920088846U CN 201367495 Y CN201367495 Y CN 201367495Y
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- single crystal
- gallium arsenide
- growing furnace
- graphite
- battery lead
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CNU200920088846XU CN201367495Y (en) | 2009-03-09 | 2009-03-09 | Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace |
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CNU200920088846XU CN201367495Y (en) | 2009-03-09 | 2009-03-09 | Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace |
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CN201367495Y true CN201367495Y (en) | 2009-12-23 |
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CNU200920088846XU Expired - Lifetime CN201367495Y (en) | 2009-03-09 | 2009-03-09 | Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103526279A (en) * | 2013-10-25 | 2014-01-22 | 北京华进创威电子有限公司 | Sleeve type graphite heater used for GaAs (gallium arsenide) crystal growth |
CN110565168A (en) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | Furnace body temperature-adjustable cold wall single crystal furnace and gallium arsenide crystal growth method |
-
2009
- 2009-03-09 CN CNU200920088846XU patent/CN201367495Y/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103526279A (en) * | 2013-10-25 | 2014-01-22 | 北京华进创威电子有限公司 | Sleeve type graphite heater used for GaAs (gallium arsenide) crystal growth |
CN110565168A (en) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | Furnace body temperature-adjustable cold wall single crystal furnace and gallium arsenide crystal growth method |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Beijing Huajin Chuangwei Electronics Co., Ltd. Assignor: Xiangxiang Shenzhou Crystal Technology Development Co., Ltd. Contract record no.: 2012990000378 Denomination of utility model: Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace Granted publication date: 20091223 License type: Exclusive License Record date: 20120601 |
|
PP01 | Preservation of patent right |
Effective date of registration: 20180814 Granted publication date: 20091223 |
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PP01 | Preservation of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20091223 |
|
CX01 | Expiry of patent term | ||
PD01 | Discharge of preservation of patent |
Date of cancellation: 20190309 Granted publication date: 20091223 |
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PD01 | Discharge of preservation of patent |