CN201203014Y - High-light effect non-reflection non-double ghost LED tunnel lamp - Google Patents
High-light effect non-reflection non-double ghost LED tunnel lamp Download PDFInfo
- Publication number
- CN201203014Y CN201203014Y CNU2008200290663U CN200820029066U CN201203014Y CN 201203014 Y CN201203014 Y CN 201203014Y CN U2008200290663 U CNU2008200290663 U CN U2008200290663U CN 200820029066 U CN200820029066 U CN 200820029066U CN 201203014 Y CN201203014 Y CN 201203014Y
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- led
- light source
- tunnel lamp
- heat
- led light
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- Expired - Lifetime
Links
- 230000000694 effects Effects 0.000 title description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000741 silica gel Substances 0.000 claims abstract description 26
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 26
- 229960001866 silicon dioxide Drugs 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 22
- 206010003084 Areflexia Diseases 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 230000017525 heat dissipation Effects 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 3
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- 238000000034 method Methods 0.000 description 9
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- QKAJPFXKNNXMIZ-UHFFFAOYSA-N [Bi].[Ag].[Sn] Chemical compound [Bi].[Ag].[Sn] QKAJPFXKNNXMIZ-UHFFFAOYSA-N 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229920002521 macromolecule Polymers 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
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- 239000004411 aluminium Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model relates to an LED tunnel lamp with high light efficiency and without reflection and double image, comprising an LED light source and a control power supply which are arranged in an aluminum integral radiating tunnel lamp housing. The LED light source is provided with an aluminum-based material radiating baseplate on which a plurality of LED chips are welded, a layer of silica-gel fluorescence powder is respectively coated on each LED chip of the radiating baseplate, a hemisphere-shaped PC lens housing is covered outside a luminant, and silica-gel lens material is filled in a space surrounded by the PC lens housing, the luminant and the radiating baseplate so as to form a unit LED light source with no reflection and high luminous emissivity, and the LED tunnel lamp with high light efficiency and high power is further formed by the combination and expansion of each unit LED light source according to the principle of no reflection and no double image space. The utility model has the advantages of reasonable structure, low cost, no double image, good radiating performance, low electric power consumption, high light efficiency, little light attenuation, long service life, and the like.
Description
Technical field
The utility model content belongs to the technology of semiconductor illumination application field, relates to a kind of energy-efficient high light efficiency high-capacity LED Tunnel Lamp.
Background technology
In existing traffic tunnel illumination, underground lighting and special place illumination application product, the LED Tunnel Lamp is for the energy-conservation very important a kind of product of transport development.Because under the identical condition of luminosity, the power consumption of LED Tunnel Lamp only is 40%～50% of a common metal halide lamp, life-span then is tens times of metal halide lamp, again because the firm difficult fragmentation of LED Tunnel Lamp and do not contain harmful substance such as mercury, environment there is not any pollution, simultaneously also owing to do not contain infrared light and ultraviolet light in the spectrum of LED Tunnel Lamp, has high color developing, can reduce driver and conductor's collimation error, furthermore the LED Tunnel Lamp adopts the direct current constant current driven, any stroboscopic can not appear, can effectively avoid personnel's visual fatigue, therefore the LED Tunnel Lamp can effectively reduce the generation of tunnel accident in very big saves energy, so it has been known as current optimal tunnel green illumination light fixture in the world.
The light source of present LED Tunnel Lamp known in this field adopts substantially: 1., be assembled in the led light source that the Tunnel Lamp housing of packing on the large-area heat radiator forms by many LED lamp pearls; 2., planar package light source; promptly on a small size heat-radiating substrate, use intensive bonding many blue-light-emitting led chips of elargol; on led chip, coat silica gel matter fluorescent material; planar package is protected silica gel on fluorescent material again; form the small size light source, again light source is installed in the LED Tunnel Lamp light source of packing the Tunnel Lamp lamp housing on the large-area heat radiator into and forming.Though above-mentioned known led light source Tunnel Lamp has solved the power expanding problem of LED illumination substantially, low coverage irradiation has ghost image, light extraction efficiency is low, power density is low, combined power is little, heat radiation is insufficient, technology difficulty is big, the process-cycle is long, the high deficiency of cost but it still has, and causes that the high-power LED light source performance that encapsulates finished product is lower, cost is very high and power is less.The main cause that the problems referred to above occur can be summed up as:
One, many LED lamp pearls is assembled in the led light source that reinstalls the formation of Tunnel Lamp housing on the radiator, because the volume of single LED lamp pearl is corresponding bigger, area by the led light source of many LED lamp pearls assembling is also bigger, thereby more just formed the multiple light courcess effect at the distance light source, make object produce ghost image.
Two, at the planar package light-source structure, when injecting silica gel by fluorescent material, the light beam that led chip sent forms 180 ° of light sources, light is injected the space from silica gel again, because light is to inject optically thinner medium by optically denser medium, in the medium of two kinds of different refractivities, light can take place to off-normal direction refraction effect, when incidence angle during greater than critical angle light in silica gel, produce total reflection, wherein:
n
1=n
s=1.53 n
sBe the silica gel refractive index
n
2=n
A=1.0 n
ABe air refraction
Then get: refraction angle θ c=sin by the Si Nieer formula
-1(n
2/ n
1)=sin
-1° (1/1.53)=41.Because due to the silica gel exiting surface plane, light beam is injected the air from silica gel, only the part of angle of incidence of light degree θ＜θ c * 2=41 ° * 2=82 ° could reflect and exports in the air space in the light beam, all the other very most of light are in the inner formation of silica gel loss at total reflection, can not output to air space, so will make luminous flux loss about 40%; The total reflection energy of light in silica gel produces heat on the other hand, and the led chip temperature is raise, and can reduce luminous efficiency significantly when led chip is operated on the higher temperature, causes led chip to produce decay of luminescence.
Three, conventional encapsulating structure bonds together led chip and heat-radiating substrate by elargol; elargol is mixed by macromolecule epoxy glue and silver powder particles and forms; elargol to be heated with higher temperature (180～200 ℃) in certain hour (90～120 minutes) during preparation; make the macromolecule epoxy glue curing in the mixture and finish bonding effect, finish heat conduction and electric action by the silver powder particles in the mixture then.In the elargol solidification process, the macromolecule epoxy glue carries out moistening to silver powder particles, forms the epoxy glue integument around silver powder particles, and the thermal resistance and the conduction resistance of solidifying back elargol layer are all increased significantly; The resistance increase can make the voltage drop (VF) on the led chip increase, and causes the led chip heat power consumption to strengthen; And thermal resistance increases the heat cause on the led chip and can not be transmitted to fully fast and distribute on the heat-radiating substrate, makes temperature on the led chip far above the temperature of heat-radiating substrate.Led chip is operated in very on the high-temperature, will inevitably reduce significantly led chip luminous efficiency, reduce the performance of led light source and the power density that reduces high-power LED light source; Because the curing of elargol is carried out, also can produce damage therebetween again under high-temperature (180～200 ℃) and long-time (90～120 minutes), reduce the luminous efficiency of led chip led chip; In addition, very big with the encapsulation difficulty of the bonding high-power LED light source of elargol, the encapsulation cycle is very long, and cost is also very high, and this also feasible encapsulation to the superpower led light source is difficult to realize.
The utility model content
The purpose of this utility model is to overcome the deficiency that prior art exists, and then provides a kind of high light efficiency areflexia with reasonable in design, low, the no ghost image of cost of manufacture, perfect heat-dissipating, advantages such as power consumption is low, optical efficiency is high, light decay reduces, long service life not have ghost image LED Tunnel Lamp.
Be used to realize that the technical solution of foregoing invention purpose is such: the high light efficiency areflexia that is provided does not have ghost image LED Tunnel Lamp and comprises led light source and the control power supply composition that is located in the aluminum integral heat dissipation Tunnel Lamp housing, led light source wherein has a heat-radiating substrate of being made by the deposited copper nickel-plated aluminum base material flitch in surface, on heat-radiating substrate, be welded with a plurality of led chips of arranging and forming by determinant lamp battle array with the environment-friendly low-temperature solder(ing) paste, be coated with one deck silica gel matter fluorescent material above the led chip respectively at each and form the LED illuminator, on heat-radiating substrate, be covered with a hemispherical PC lens case outside each illuminator respectively by the moulding of areflexia condition, in the space that PC lens case and illuminator and heat-radiating substrate surround, be filled with the silica-gel lens material, form areflexia high light-emitting rate unit LEDs light source thus, so again by each unit LEDs light source according to areflexia, no ghost image spacing combination dilatation becomes whole areflexia is not had the high light efficiency high-capacity LED of ghost image integral heat dissipation Tunnel Lamp.Between led light source and aluminum Tunnel Lamp housing, coat high thermal conductive silicon fat, link with bolted then.
Compared with the prior art, the utlity model has following major advantage.
One, no ghost image
The utility model adopts luminescence chip to carry out the encapsulation of multicore led light source, because the led chip volume is very little, the high-power LED light source area that is packaged into is less, and therefore the ghost image that produces in the nearer place of distance light source is very little.
Two, areflexia, high light-emitting rate
The utility model has adopted areflexia unit LEDs light source power dilatation encapsulation technology, the beam angle of unit LEDs light source is increased substantially, in the inner unglazed reflection of unit LEDs light source, the interference of light is very little between the adjacent cells led light source, the light loss consumption is very little, makes the more common planar package light source technology of light output efficiency increase light extraction efficiency more than 40%.
Three, high-cooling property, high power density, high-performance, superpower, need not the baking
1, the utility model is compared with present known packaged type, uses the environment-friendly low-temperature solder(ing) paste, has substituted the elargol adhesives.It is molecular structure that solder(ing) paste melts bonding, it is the silver powder particles structure that elargol solidifies bonding, theory analysis and actual test shows, the solder(ing) paste welding is solidified bonding raising radiating effect more than 20～50 times than elargol, heat on the led chip can be transmitted on the heat-radiating substrate fully fast distribute, form the thermograde very little (less than 1 ℃) between the led chip and heat-radiating aluminum plate behind the high-power LED light source; Link with bolted again after between the heat-radiating aluminum plate of led light source and aluminum integral heat dissipation lamp housing, coating the high thermal conductivity silicone grease, thermograde between led light source and integral heat dissipation lamp housing also very little (less than 1 ℃) finally makes the temperature (less than 2 ℃) of heat-dissipation lamp housing temperature near led chip.By heat-dissipation lamp housing the heat on the led chip is distributed, make led chip be operated in lower temperature.
2, the solder(ing) paste welding will reduce significantly than the bonding conductive resistance of elargol curing, causes LED work pressure drop (VF) reduction, heat power consumption to reduce, and then the temperature on the led chip is further reduced.The high-capacity LED chip operation can increase substantially the luminous efficiency of led chip at a lower temperature, has improved the power density of high-power LED light source, has reduced LED light decay, raising led chip security reliability and service life significantly.The use of SMT welding machine in addition also makes the encapsulation difficulty of high-power LED light source reduce, and the encapsulation cycle shortens, and uses SMT welding machine curing rate fast, need not toast.
3, solder(ing) paste welding is solidified bonding mechanical strength than elargol and will be increased substantially, and adopts the thick specification sial line of low cost to conduct electricity connection, and it is above that lead tensile strength is increased by 500; Adopt the nickel-plated aluminum substrate, make heat-conducting substrate have very high non-oxidizability.
4, the overall process that led chip is welded on the nickel-plated aluminum substrate is that tin bismuth silver environment-friendly low-temperature solder(ing) paste carries out multiple temperature sections, finishes in the short time (all the temperature section needs 2～3 minutes altogether) in the SMT machine, only has 20 seconds in 150 ℃ of temperature sections of maximum temperature.Avoid the high-temperature of elargol, long-time solidification process that led chip is produced damage, can not reduce the luminous efficiency of led chip.
5, adopt and to have room temperature vulcanized (RTV), high transmission rate, high index of refraction and high wall built-up performance silicon gel and carry out fluorescent material modulation and the encapsulation of surperficial bloomed lens, use cold curing.Avoid the long-time high-temperature baking process of traditional silica gel that led chip is produced damage, can not reduce the luminous efficiency of led chip.
The enforcement of above technical scheme makes led light source have high-cooling property, high power density and high reliability, has improved the service life of led light source Tunnel Lamp greatly; Reduced the optical attenuation of led light source.(Po 〉=1000W) batch process of led light source Tunnel Lamp is laid a good foundation and technical guarantee is provided for high-performance, superpower.
Four, low cost
1, the encapsulation technology that the power expanding of led light source adopts in the utility model is compared with common packaged type, under same light flux condition, can reduce led chip consumption 30%, reduces silica gel consumption 40%.
2, the utility model adopts the nickel-plated aluminum substrate to substitute expensive gold-plated aluminium base, and (nickel-plated aluminum substrate cost is 0.06 yuan/cm2 in the market, gold-plated aluminium base cost be 0.50 yuan/cm2), (tin bismuth silver environment-friendly low-temperature solder(ing) paste cost is 0.50 yuan/g in the market to adopt tin bismuth silver environment-friendly low-temperature solder(ing) paste to substitute expensive elargol adhesives, elargol adhesives cost be 35.00 yuan/g), adopt the sial line of low-cost big specification, substituted that expensive (the Si-Al wire cost of 50 μ m diameters is 0.04 yuan/m in the market than small dimension gold thread lead, 0.8 the spun gold cost of μ m diameter be 0.8 yuan/m), these all greatly reduce product cost.
3, the utility model is the overall process that led chip is welded on the nickel-plated aluminum substrate that tin bismuth silver environment-friendly low-temperature solder(ing) paste carries out multiple temperature sections (150 ℃ of maximum temperatures in the SMT machine, 20 seconds), the short time (2～3 minutes) finishes, and the elargol adhesives is made up of silver powder particles and polymeric adhesion material, the led chip solidification process is to give elargol adhesives long-time (90～120 minutes), high temperature (180～200 ℃) heating, the polymeric adhesion material cured is finished, thereby saved electric power and human cost significantly, improved the finished product rate.In addition, the utility model also adopts room temperature vulcanized (RTV), high transmission rate, high index of refraction, high wall built-up performance silicon gel, carry out fluorescent material modulation and the encapsulation of surperficial bloomed lens, use cold curing, (150～180 ℃ of the long-time hot setting processes of traditional silica gel have been substituted, 90～120 minutes), equally also saved electric power and human cost significantly, improved the finished product rate.
4, printed solder paste and welding are convenient to plane contact in led chip radiating surface and heat-radiating substrate nickel plating printed circuit surface, have reduced tin bismuth silver environment-friendly low-temperature solder(ing) paste waste, have improved productivity ratio and have saved human cost.
5, the utility model adopts high transmission rate, high-strength PC as areflexia silica-gel lens shell molds, can increase substantially the filling casting efficient of silica gel, and silica gel is not leaked in solidification process.
6, the utility model adopts control technologys such as equivalent load expanding type technology, parallel branch electric current and temperature automatic equalization technology, series arm monomer LED open-circuit-protection technology.Can make the power output of led light source not be subjected to the restriction of single LEDs chip power and quantity, solved electric current and the temperature equalization problem of super-high-power LED light source when direct connection in series-parallel, can the imbalance because of electric current or temperature not make the vicious circle of local chip generation high temperature damage the phenomenon of led light source when the multicore sheet work; Solved the tandem working of many led chips, the inoperable problem of other series connection chips when a certain chip of series arm damages, each paths of LEDs core has improved the reliability that works long hours of high-power LED light source greatly when making the plurality of LEDs chip carry out connection in series-parallel power expanding super high power.
7; the utility model adopts wide-voltage range auto polarity change-over circuit; the EMC filter circuit; APFC; half-bridge resonance formula no-voltage power circuit; esd protection design etc.; make led light source have extremely wide working voltage scope and very high power factor; can not produce harmonic pollution and environment is produced electromagnetic interference supply line; and the alternating current-direct current self adaptation (exchanges: 60～310v; direct current: 60～450v); can adapt to global any region uses; so also make high-power LED light source have very high antistatic effect, greatly improved high-power LED light source in the open; high pressure; high minefield (Tunnel Lamp; the railway lamp) security of using under the particular surroundings such as.
The utility model designer has been directed to places such as various application places such as freeway tunnel, major trunk roads tunnel, block, auxilliary tunnel, road, block, the illumination of underground parking, sub-district and has developed multiple high light efficiency areflexia and do not have ghost image LED Tunnel Lamp on the basis of technique scheme.
Description of drawings
Fig. 1 is the areflexia encapsulating structure schematic diagram of led light source in this LED Tunnel Lamp.
Fig. 2 no ghost image user mode schematic diagram of the present utility model.
Fig. 3 is the encapsulating structure schematic diagram of unit LEDs chip.
The specific embodiment
Below with reference to drawings and Examples content of the present utility model is described further, but actual fabrication structure of the present utility model is not limited in following embodiment.
Referring to accompanying drawing, apply the heat-radiating substrate 5 that copper nickel-plated aluminum base material flitch is made based on one by the surface, on heat-radiating substrate 5, arrange and weld a plurality of BLED chips 4 by the environment-friendly low-temperature solder(ing) paste by determinant lamp battle array; Coat silica gel matter fluorescent material 3 above the led chip 4 at each, form the LED illuminator; The high strength industrial plastics PC that use has high transmission rate is made into the hemispherical PC lens case 1 of slim uniform thickness; Adopt and be filled into PC lens case 1, form the silica gel packaged lens with the high transparent silica gel lens material 2 of the identical light transmittance of PC; Silica gel packaged lens centering is packaged in the fluorescent material top forms areflexia high light-emitting rate unit LEDs light source, become high-power LED light source by each unit LEDs combination of light sources dilatation, led light source and control power supply are contained in promptly to be made high light efficiency areflexia behind the aluminum integral heat dissipation Tunnel Lamp housing and not to have ghost image LED Tunnel Lamp.
The utility model adopts luminescence chip to carry out the encapsulation of multicore high-power LED light source, because the high-power LED light source area that is packaged into is less, therefore the ghost image that produces in the nearer place of distance light source is very little, as shown in Figure 2.Number in the figure 6 is an object, and 7 is project objects.
Claims (1)
1, a kind of high light efficiency areflexia does not have ghost image LED Tunnel Lamp, comprise the led light source and the control power supply that are located in the aluminum integral heat dissipation Tunnel Lamp housing, it is characterized in that said led light source has a heat-radiating substrate (5) of being made by the deposited copper nickel-plated aluminum base material flitch in surface, upward be welded with a plurality of led chips (4) of arranging and forming at heat-radiating substrate (5) by determinant lamp battle array with the environment-friendly low-temperature solder(ing) paste, on each led chip (4), be coated with one deck silica gel matter fluorescent material (3) respectively and form the LED illuminator, on heat-radiating substrate, be covered with a hemispherical PC lens case (1) outside each illuminator respectively, in the space that PC lens case (1) and illuminator and heat-radiating substrate (5) surround, be filled with silica-gel lens material (2) by the moulding of areflexia condition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200290663U CN201203014Y (en) | 2008-05-09 | 2008-05-09 | High-light effect non-reflection non-double ghost LED tunnel lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200290663U CN201203014Y (en) | 2008-05-09 | 2008-05-09 | High-light effect non-reflection non-double ghost LED tunnel lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201203014Y true CN201203014Y (en) | 2009-03-04 |
Family
ID=40425326
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200290663U Expired - Lifetime CN201203014Y (en) | 2008-05-09 | 2008-05-09 | High-light effect non-reflection non-double ghost LED tunnel lamp |
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| Country | Link |
|---|---|
| CN (1) | CN201203014Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101852384B (en) * | 2009-03-31 | 2013-08-28 | 光宝科技股份有限公司 | Method for forming lens structure of light-emitting diode and related framework thereof |
| WO2014166113A1 (en) * | 2013-04-12 | 2014-10-16 | 深圳市银盾科技开发有限公司 | Highly heat-conductive led welding method |
-
2008
- 2008-05-09 CN CNU2008200290663U patent/CN201203014Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101852384B (en) * | 2009-03-31 | 2013-08-28 | 光宝科技股份有限公司 | Method for forming lens structure of light-emitting diode and related framework thereof |
| WO2014166113A1 (en) * | 2013-04-12 | 2014-10-16 | 深圳市银盾科技开发有限公司 | Highly heat-conductive led welding method |
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