CN201185187Y - 大功率小封装三极管 - Google Patents

大功率小封装三极管 Download PDF

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CN201185187Y
CN201185187Y CNU2008200625506U CN200820062550U CN201185187Y CN 201185187 Y CN201185187 Y CN 201185187Y CN U2008200625506 U CNU2008200625506 U CN U2008200625506U CN 200820062550 U CN200820062550 U CN 200820062550U CN 201185187 Y CN201185187 Y CN 201185187Y
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陈耿鑫
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SICHUAN LIPTAI ELECTRONIC CO Ltd
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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Abstract

本实用新型公开了一种大功率小封装三极管，它包括引线框架、芯片、金属引线、引脚与塑封体，所述引线框架上部自生一块散热片，其下部自生一个集电极引脚，芯片通过焊接层固定在引线框架上，发射极引脚，基极引脚通过金属引线分别与芯片相连，所述封装体采用环氧树脂。本实用新型具有功率大、体积小、节约材料、成本低、使用寿命长、工作可靠的特点，广泛用作节能灯、充电器、电源、家用电器中的重要电器元件。

Description

大功率小封装三极管
技术领域
本新型涉及一种半导体电器元件，特别是涉及一种大功率小封装三极管。
背景技术
三极管是电器中的重要元件，应用十分广泛。但由于目前国内的节能灯、充电器、电源、家用电器中使用的大功率三极管发热量大，直接影响了电器的稳定和使用寿命，常用的方法是增大塑封体的体积，以增大散热面积，提高散热性能，保证三极管正常工作。但塑封体过大，不仅增大了三极管的体积，增加了成本，而且不适宜于要求功率大，体积小的场合，限制了大功率三极管的应用范围。
发明内容
本实用新型的发明目的是针对现有技术的不足，提供一种功率大，封装体积小，散热效率高，工作可靠，使用寿命长的大功率小封装三极管。
本实用新型的发明目的通过下述技术方案实现：
一种大功率小封装三极管，包括芯片、引线框架、金属引线、引脚与塑封体，所述引线框架上部自生一块散热片、其下部自生一个集电极引脚，芯片通过焊接层固定在引线框架上；发射极引脚、基极引脚通过金属引线分别与芯片相连，所述封装体采用环氧树脂。
所述芯片为双极性晶体管或肖特基二极管芯片；所述金属引线为铝硅线或金丝或铜丝。
由于本实用新型采用了上述结构，明显地提高了电器元件的导电性能，塑封体采用环氧树脂，提高了三极管的散热效率，所以在功率相同的情况下，减少了塑封体的体积30～60％，从而减小了三极管的体积，三极管的成本也随之降低30～50％，由于本实用新型结构紧凑，增加了应用范围，符合电子元器件微型化的趋势，广泛用作节能灯、充电器、电源、家用电器中的重要元器件。
附图说明
图1是大功率小封装三极管的结构示意图；
图2为图1的A-A剖视图；
图3是大功率小封装三极管的内部结构图；
图4是图3的左视图。
具体实施方式
下面结合附图对本实用新型作进一步描述。
由图1和图2所知，本实用新型包括散热片1、引线框架2、芯片3、引线5、塑封体6、发射极引脚7、集电极引脚8、基极引脚9、焊接层10。所述引线框架2的上部自生散热片1、下部自生集电极引脚8，即散热片1、引线框架2和集电极引脚8是一个整体。在引线框架2上用焊接层10固定一个芯片3，芯片3可采用双极性晶体管或肖特基二极管芯片。芯片3上有2个压焊区4，发射极引脚7和基极引脚9通过金属引线5分别与芯片3上的压焊区4相连，金属引线5可采用铝硅线或金丝或铜丝。用塑封体6将上述结构封装起来，就制成了大功率小封装三极管。其塑封体6采用环氧树脂，散热性能好。图3、图4表示了本实用新型的内部结构图。

Claims (3)

1、一种大功率小封装三极管，包括芯片、引线框架、金属引线、引脚与塑封体，其特征在于：所述引线框架(2)上部自生一块散热片(1)、其下部自生一个集电极引脚(8)，芯片(3)通过焊接层(10)固定在引线框架(2)上；发射极引脚(7)、基极引脚(9)通过金属引线(5)分别与芯片(3)相连，所述封装体(6)采用环氧树脂。
2、根据权利要求1所述的大功率小封装三极管，其特征在于：所述芯片(3)为双极性晶体管或肖特基二极管芯片。
3、根据权利要求1或2所述的大功率小封装三极管，其特征在于：所述金属引线(5)为铝硅线或金丝或铜丝。
CNU2008200625506U 2008-03-15 2008-03-15 大功率小封装三极管 Expired - Fee Related CN201185187Y (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102244066A (zh) * 2011-08-05 2011-11-16 株洲南车时代电气股份有限公司 一种功率半导体模块
CN104409430A (zh) * 2014-12-08 2015-03-11 杰群电子科技（东莞）有限公司 一种半导体器件及其封装方法
CN106601713A (zh) * 2016-12-21 2017-04-26 长电科技（宿迁）有限公司 一种基岛翻边可焊线的框架结构及其封装结构

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102244066A (zh) * 2011-08-05 2011-11-16 株洲南车时代电气股份有限公司 一种功率半导体模块
CN104409430A (zh) * 2014-12-08 2015-03-11 杰群电子科技（东莞）有限公司 一种半导体器件及其封装方法
CN106601713A (zh) * 2016-12-21 2017-04-26 长电科技（宿迁）有限公司 一种基岛翻边可焊线的框架结构及其封装结构

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