CN201163621Y - 一种可提高转移安全性的晶舟转换器 - Google Patents
一种可提高转移安全性的晶舟转换器 Download PDFInfo
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- CN201163621Y CN201163621Y CNU2008200552878U CN200820055287U CN201163621Y CN 201163621 Y CN201163621 Y CN 201163621Y CN U2008200552878 U CNU2008200552878 U CN U2008200552878U CN 200820055287 U CN200820055287 U CN 200820055287U CN 201163621 Y CN201163621 Y CN 201163621Y
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CNU2008200552878U CN201163621Y (zh) | 2008-01-31 | 2008-01-31 | 一种可提高转移安全性的晶舟转换器 |
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CNU2008200552878U CN201163621Y (zh) | 2008-01-31 | 2008-01-31 | 一种可提高转移安全性的晶舟转换器 |
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CN201163621Y true CN201163621Y (zh) | 2008-12-10 |
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CNU2008200552878U Expired - Lifetime CN201163621Y (zh) | 2008-01-31 | 2008-01-31 | 一种可提高转移安全性的晶舟转换器 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102543794A (zh) * | 2010-12-30 | 2012-07-04 | 南茂科技股份有限公司 | 晶舟转换器 |
CN106531659A (zh) * | 2015-10-22 | 2017-03-22 | 安徽超元半导体有限公司 | 一种自动晶圆转换器 |
-
2008
- 2008-01-31 CN CNU2008200552878U patent/CN201163621Y/zh not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102543794A (zh) * | 2010-12-30 | 2012-07-04 | 南茂科技股份有限公司 | 晶舟转换器 |
CN102543794B (zh) * | 2010-12-30 | 2014-02-12 | 南茂科技股份有限公司 | 晶舟转换器 |
CN106531659A (zh) * | 2015-10-22 | 2017-03-22 | 安徽超元半导体有限公司 | 一种自动晶圆转换器 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130226 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
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TR01 | Transfer of patent right |
Effective date of registration: 20130226 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20081210 |