CN1937216A - 封装体、封装方法、各异向性导电膜、及其使用的导电粒子 - Google Patents

封装体、封装方法、各异向性导电膜、及其使用的导电粒子 Download PDF

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CN1937216A
CN1937216A CNA2006100035453A CN200610003545A CN1937216A CN 1937216 A CN1937216 A CN 1937216A CN A2006100035453 A CNA2006100035453 A CN A2006100035453A CN 200610003545 A CN200610003545 A CN 200610003545A CN 1937216 A CN1937216 A CN 1937216A
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conducting
conductivity core
insulating properties
anisotropic
conducting particles
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苏昭源
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Publication of CN1937216A publication Critical patent/CN1937216A/zh
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Abstract

本发明揭示一种封装体、封装方法、各异向性导电膜、及其所使用的导电粒子。上述封装体包含：一基底具有一外部接点于其上；一晶片具有一导电凸块，上述导电凸块置于上述基底的上述外部接点上；以及一各异向性导电膜置于上述基底与上述晶片之间，上述各异向性导电膜具有一粘结剂与其内的多个导电粒子，上述导电粒子分别具有被一绝缘性外壳所围绕的一导电性芯材，其中至少一个导电粒子置于上述导电凸块与上述外部接点之间，且其绝缘性外壳发生破裂，而暴露出其内的导电性芯材，而电性连接上述导电凸块与上述外部接点。

Description

封装体、封装方法、各异向性导电膜、及其使用的导电粒子
技术领域
本发明有关于半导体元件，特别关于覆晶封装技术。
背景技术
将裸晶粘着于一导线基底例如覆晶封装或将晶片直接封装于电路板(chip on board；COB)、或是将裸晶粘着于玻璃基板(chipon glass；COG)的技术，为先进的封装技术，可达成电子产品的轻量化、微型化、低成本、与低耗能。
各异向性导电膜(anisotropic conductive film；ACF)的使用，由于其具有：可应用于低接点间距的产品、可低温制程的能力、不需使用助焊剂、可简化制程并使制程具有弹性而降低成本、高产量、可达成无铅制程等优点，而有逐渐取代底胶填充(underfill)的趋势。各异向性导电膜为具有粘性的薄膜，在绝缘性的粘结剂膜内具有导电性粒子，厚度通常为15～35μm。以下叙述已知使用各异向性导电膜的封装制程。
请参考图1A，一基底22具有一连接垫21于其上。在约100℃的温度下，将各异向性导电膜10层积于基底22上。各异向性导电膜10包含多个直径3～5μm的镍粒子19于一粘结剂20中。晶片1具有多个凸块3与一保护层2于一表面上，其中凸块3电性连接至晶片1的内部线路，而保护层2将凸块3彼此电性隔绝。晶片的凸块3的排列是对应于基底22的连接垫21，然后将凸块3与相对应的连接垫21对齐后，对晶片1施加压力P及/或热能而在约100℃的温度之下，将晶片1粘着于基底22上。
请参考图1B，对晶片1所施加的压力P及/或热能，会经由凸块3而使粘结剂20流动，而将镍粒子19置于每个凸块3与对应的连接垫21之间，而使两两之间产生电性连接。在某些情况下，粘结剂20的流动会促使镍粒子19集结于各凸块3之间及/或各连接垫21之间，而造成各凸块3之间及/或各连接垫21之间的短路问题，而对制程良率造成不良影响。而上述短路问题的发生率会随着凸块3间距的缩小而急遽增加。
另外，在上述制程中，各异向性导电膜10会被加热至约100℃，而使镍粒子19容易发生氧化的问题。当各凸块3与对应的连接垫21之间的镍粒子19发生氧化时，会导致凸块3与对应的连接垫21之间的高阻抗或开路(open)的问题，对制程良率与产品可靠度造成不良影响。
美国专利US 6,232,563揭示在上述凸块3的侧壁上形成绝缘膜而避免凸块3之间发生短路的技术，但无法避免如图1B的区域A所示发生于连接垫21的短路问题与镍粒子19的氧化问题。
发明内容
有鉴于此，本发明的一目的是提供一种封装体、封装方法、各异向性导电膜、及其所使用的导电粒子，可避免上述短路与氧化问题的发生，而提升制程良率与产品可靠度。
为达成本发明的上述目的，本发明提供一种导电粒子，适用于一各异向性(anisotropic)导电膜中，包含：一导电性芯材(core)；一绝缘性外壳围绕上述导电性芯材，其中上述绝缘性外壳受到一既定应力作用时发生破裂，而暴露出上述导电性芯材。
本发明的导电粒子中，该导电性芯材的直径与该绝缘性外壳的厚度的比值为1％～10％。
本发明的导电粒子中，该导电粒子的直径为5～20μm。
本发明的导电粒子中，该导电性芯材为无铅材质。
本发明的导电粒子中，该导电性芯材包含金属。
本发明的导电粒子中，该导电性芯材包含镍。
本发明的导电粒子中，该绝缘性外壳包含二氧化硅或聚合物。
本发明又提供一种各异向性(anisotropic)导电膜，包含：一粘结剂；以及多个导电粒子于上述粘结剂中，上述导电粒子分别具有一导电性芯材与围绕上述导电性芯材的一绝缘性外壳，其中上述绝缘性外壳受到一既定应力作用时发生破裂，而暴露出上述导电性芯材。
本发明的各异向性导电膜中，该粘结剂为热塑性或热固性。
本发明又提供一种封装体，包含：一基底具有一外部接点于其上；一晶片具有一导电凸块，上述导电凸块置于上述基底的上述外部接点上；以及一各异向性导电膜置于上述基底与上述晶片之间，上述各异向性导电膜具有一粘结剂与多个导电粒子于上述粘结剂中，上述导电粒子分别具有一导电性芯材与围绕上述导电性芯材的一绝缘性外壳，其中上述导电粒子中至少一个导电粒子置于上述导电凸块与上述外部接点之间，且其绝缘性外壳发生破裂，而暴露出其内的导电性芯材，而电性连接上述导电凸块与上述外部接点。
本发明又提供一种封装方法，包含：提供一基底具有一外部接点于其上；将一各异向性导电膜粘着于上述基底，覆于上述外部接点上，上述各异向性导电膜具有一粘结剂与多个导电粒子于上述粘结剂中，上述导电粒子分别具有一导电性芯材与围绕上述导电性芯材的一绝缘性外壳；以及对具有一导电凸块的一晶片施加压力，将上述晶片粘着于上述各异向性导电膜，而使上述导电粒子中至少一个导电粒子置于上述导电凸块与上述外部接点之间，并使其绝缘性外壳发生破裂，而暴露出其内的导电性芯材，而电性连接上述导电凸块与上述外部接点。
根据本发明的封装体、封装方法、各异向性导电膜、及其所使用的导电粒子，可提升制程良率与产品可靠度。
附图说明
图1A与图1B为一系列的剖面图，显示一传统的封装方法。
图2A～图2C为一系列的剖面图，显示本发明较佳实施例的封装体、封装方法、各异向性导电膜、及其所使用的导电粒子。
图3为一剖面图，显示本发明较佳实施例的封装体的再制(rework)。
具体实施方式
为了让本发明的上述和其他目的、特征、和优点能更明显易懂，下文特别举出多个较佳实施例，并配合附图，作详细说明如下：
图2A显示本发明较佳实施例的各异向性导电膜110，其层叠于或粘着于一基底122上，基底122具有一连接垫121于其上。而图2B显示各异向性导电膜110所使用的导电粒子119。
请参考图2B，导电粒子119包含一导电性芯材119a与围绕导电性芯材119a的绝缘性外壳119b。绝缘性外壳119b会受到一既定应力的作用而破裂，上述应力来自后续的晶片粘着的步骤。当各异向性导电膜110应用于覆晶封装体或类似结构时，导电粒子119的直径较好为5～20μm。在某些实施例中，导电性芯材119a为无铅材质。在某些实施例中，导电性芯材119a包含金属，例如为镍、软焊料、银、金、或铜。在某些实施例中，绝缘性外壳119b包含二氧化硅或聚合物，例如为聚酰亚胺(polyimide)。
请参考图2A，各异向性导电膜110包含一粘结剂120与分布于其内的多个导电粒子119，导电粒子119包含导电性芯材119a与围绕导电性芯材119a的绝缘性外壳119b。在某些实施例中，粘结剂120为热塑性；而在其他实施例中，粘结剂120为热固性。
在图2A中，基底122可以是有机基底、陶瓷基底、金属基底、或是其他具有用于覆晶封装或COB的线路的基底。另外，基底122也可以为液晶显示器的基板。在某些实施例中，各异向性导电膜110在约100℃的温度之下，粘着或层积于基底122，此时每个导电粒子119中的绝缘性外壳119b保护其内的导电性芯材119a不被氧化，而避免已知技术所发生的高阻抗或开路(open)的问题。
在图2C中，提供一晶片101，具有多个凸块103于其上。凸块103电性连接至晶片101的内部线路。另外，保护层102置于晶片1上，将凸块103彼此电性隔绝。晶片101的凸块103的排列对应于基底22的连接垫121，然后将凸块103与相对应的连接垫121对齐后，对晶片101施加压力P及/或热能，将晶片101粘着于基底122上。在某些实施例中，晶片101的粘着温度为约100℃。在某些实施例中，上述压力P值为500～5000g/mm2。对晶片101所施加的压力P及/或热能，会经由凸块103而使粘结剂120流动，而将导电粒子119置于每个凸块103与对应的连接垫121之间。在此同时，由压力P所引发的应力会经由凸块103，使位于凸块103与连接垫121之间的导电粒子119的绝缘性外壳119b破裂，而暴露出其内的导电性芯材119a而使凸块103与对应的连接垫121电性连接。同时关于其他未被置于凸块103与连接垫121之间的导电粒子119，其绝缘性外壳119b仍围绕其内的导电性芯材119a。在某些实施例中，导电性芯材119a的直径与绝缘性外壳119b的厚度的比值为1％～10％。
如图2C所示，在某些情况下，粘结剂120的流动会促使某些导电粒子119集结于各凸块103之间及/或各连接垫121之间。由于绝缘性外壳119b的存在，而使得被上述导电粒子119所连接的凸块103之间及/或各连接垫121之间，不会发生电性连接，因此可解决已知技术中的桥接问题，而提升制程良率与产品可靠度。
在某些实施例中，粘结剂120的黏度会因紫外线UV的照射而减低，而适用于封装体的再制(rework)，其中粘结剂120较好为对紫外线敏感的材质。如图3所示，当本发明的封装体需要再制时，以既定的强度的紫外线UV，照射本发明的封装体一既定的时间后，就可以将晶片101、各异向性导电膜110、与基底122彼此分离，然后再重复图2A与图2C所示的步骤完成再制。
虽然本发明已以较佳实施例揭露如上，然其并非用以限定本发明的范围，任何熟悉本项技术的人员，在不脱离本发明的精神和范围内，可在此基础上做进一步的改进和变化，因此本发明的保护范围当以本申请的权利要求书所界定的范围为准。
附图中符号的简单说明如下：
1：晶片
2：保护层
3：凸块
10：各异向性导电膜
19：镍粒子
20：粘结剂
21：连接垫
22：基底
101：晶片
102：保护层
103：凸块
110：各异向性导电膜
119：导电粒子
119a：导电性芯材
119b：绝缘性外壳
120：粘结剂
121：连接垫
122：基底
A：区域
P：压力
UV：紫外线

Claims (11)

1.一种导电粒子，适用于一各异向性导电膜中，包含：
一导电性芯材；
一绝缘性外壳围绕该导电性芯材，其中该绝缘性外壳受到一既定应力作用时发生破裂，而暴露出该导电性芯材。
2.根据权利要求1所述的导电粒子，其中该导电性芯材的直径与该绝缘性外壳的厚度的比值为1％～10％。
3.根据权利要求1所述的导电粒子，其中该导电粒子的直径为5～20μm。
4.根据权利要求1所述的导电粒子，其中该导电性芯材为无铅材质。
5.根据权利要求1所述的导电粒子，其中该导电性芯材包含金属。
6.根据权利要求1所述的导电粒子，其中该导电性芯材包含镍。
7.根据权利要求1所述的导电粒子，其中该绝缘性外壳包含二氧化硅或聚合物。
8.一种各异向性导电膜，包含：
一粘结剂；以及
多个导电粒子于该粘结剂中，这些导电粒子分别具有一导电性芯材与围绕该导电性芯材的一绝缘性外壳，其中该绝缘性外壳受到一既定应力作用时发生破裂，而暴露出该导电性芯材。
9.根据权利要求8所述的各异向性导电膜，其中该粘结剂为热塑性或热固性。
10.一种封装体，包含：
一基底具有一外部接点于其上；
一晶片具有一导电凸块，该导电凸块置于该基底的该外部接点上；以及
一各异向性导电膜置于该基底与该晶片之间，该各异向性导电膜具有一粘结剂与多个导电粒子于该粘结剂中，这些导电粒子分别具有一导电性芯材与围绕该导电性芯材的一绝缘性外壳，其中这些导电粒子中至少一个导电粒子置于该导电凸块与该外部接点之间，且其绝缘性外壳发生破裂，而暴露出其内的导电性芯材，而电性连接该导电凸块与该外部接点。
11.一种封装方法，包含：
提供一基底具有一外部接点于其上；将一各异向性导电膜粘着于该基底，覆于这些外部接点上，该各异向性导电膜具有一粘结剂与多个导电粒子于该粘结剂中，这些导电粒子分别具有一导电性芯材与围绕该导电性芯材的一绝缘性外壳；以及对具有一导电凸块的一晶片施加压力，将该晶片粘着于该各异向性导电膜，而使这些导电粒子中至少一个导电粒子置于该导电凸块与该外部接点之间，并使其绝缘性外壳发生破裂，而暴露出其内的导电性芯材，而电性连接该导电凸块与该外部接点。
CNA2006100035453A 2005-09-19 2006-02-13 封装体、封装方法、各异向性导电膜、及其使用的导电粒子 Pending CN1937216A (zh)

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