CN1934913B - 等离子体发生装置 - Google Patents
等离子体发生装置 Download PDFInfo
- Publication number
- CN1934913B CN1934913B CN2005800094402A CN200580009440A CN1934913B CN 1934913 B CN1934913 B CN 1934913B CN 2005800094402 A CN2005800094402 A CN 2005800094402A CN 200580009440 A CN200580009440 A CN 200580009440A CN 1934913 B CN1934913 B CN 1934913B
- Authority
- CN
- China
- Prior art keywords
- plasma
- high frequency
- generation chamber
- plasma generation
- antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 32
- 229910000077 silane Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 150000004756 silanes Chemical class 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 4
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 239000012777 electrically insulating material Substances 0.000 abstract 1
- 230000000803 paradoxical effect Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 101100023111 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfc1 gene Proteins 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004091928 | 2004-03-26 | ||
| JP91928/2004 | 2004-03-26 | ||
| PCT/JP2005/005664 WO2005094140A1 (ja) | 2004-03-26 | 2005-03-22 | プラズマ発生装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1934913A CN1934913A (zh) | 2007-03-21 |
| CN1934913B true CN1934913B (zh) | 2010-12-29 |
Family
ID=35056591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800094402A Expired - Fee Related CN1934913B (zh) | 2004-03-26 | 2005-03-22 | 等离子体发生装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7849814B2 (ja) |
| EP (1) | EP1729551A4 (ja) |
| JP (1) | JP4671361B2 (ja) |
| KR (1) | KR100858102B1 (ja) |
| CN (1) | CN1934913B (ja) |
| TW (1) | TW200537992A (ja) |
| WO (1) | WO2005094140A1 (ja) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100587104C (zh) * | 2004-03-26 | 2010-02-03 | 日新电机株式会社 | 硅膜形成装置 |
| CN100468630C (zh) * | 2004-03-26 | 2009-03-11 | 日新电机株式会社 | 结晶性硅薄膜的形成方法及装置 |
| WO2005093798A1 (ja) | 2004-03-26 | 2005-10-06 | Nissin Electric Co., Ltd. | シリコンドット形成方法及びシリコンドット形成装置 |
| JP4434115B2 (ja) | 2005-09-26 | 2010-03-17 | 日新電機株式会社 | 結晶性シリコン薄膜の形成方法及び装置 |
| JP4529855B2 (ja) | 2005-09-26 | 2010-08-25 | 日新電機株式会社 | シリコン物体形成方法及び装置 |
| US20080113107A1 (en) * | 2006-11-09 | 2008-05-15 | Stowell Michael W | System and method for containment shielding during pecvd deposition processes |
| JP5400434B2 (ja) * | 2009-03-11 | 2014-01-29 | 株式会社イー・エム・ディー | プラズマ処理装置 |
| JP5754579B2 (ja) * | 2010-08-06 | 2015-07-29 | 国立大学法人名古屋大学 | イオン源 |
| US10271416B2 (en) * | 2011-10-28 | 2019-04-23 | Applied Materials, Inc. | High efficiency triple-coil inductively coupled plasma source with phase control |
| CN104409309B (zh) * | 2014-12-01 | 2016-09-21 | 逢甲大学 | 大面积等离子体处理装置与均匀等离子体生成方法 |
| JP6973718B2 (ja) * | 2018-03-19 | 2021-12-01 | 株式会社神戸製鋼所 | プラズマｃｖｄ装置、及びフィルムの製造方法 |
| JP7030204B2 (ja) * | 2018-09-20 | 2022-03-04 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、基板処理方法およびプログラム |
| CN111146067B (zh) * | 2019-12-24 | 2023-04-14 | 北京北方华创微电子装备有限公司 | 线圈组件及半导体设备 |
| JP7446190B2 (ja) * | 2020-09-23 | 2024-03-08 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ生成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1349004A (zh) * | 2000-09-27 | 2002-05-15 | 上海维安新材料研究中心有限公司 | 一种纳米硅薄膜的制备工艺和产品 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4990229A (en) | 1989-06-13 | 1991-02-05 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5430355A (en) * | 1993-07-30 | 1995-07-04 | Texas Instruments Incorporated | RF induction plasma source for plasma processing |
| JP2720420B2 (ja) | 1994-04-06 | 1998-03-04 | キヤノン販売株式会社 | 成膜／エッチング装置 |
| JP2641390B2 (ja) * | 1994-05-12 | 1997-08-13 | 日本電気株式会社 | プラズマ処理装置 |
| US5580385A (en) * | 1994-06-30 | 1996-12-03 | Texas Instruments, Incorporated | Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber |
| US5919382A (en) | 1994-10-31 | 1999-07-06 | Applied Materials, Inc. | Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor |
| JP3805808B2 (ja) | 1995-03-20 | 2006-08-09 | 株式会社東芝 | 高周波放電処理装置 |
| JP3501910B2 (ja) * | 1996-04-23 | 2004-03-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JPH11135438A (ja) * | 1997-10-28 | 1999-05-21 | Nippon Asm Kk | 半導体プラズマ処理装置 |
| US6080287A (en) * | 1998-05-06 | 2000-06-27 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
| US6474258B2 (en) * | 1999-03-26 | 2002-11-05 | Tokyo Electron Limited | Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
| JP2000345351A (ja) * | 1999-05-31 | 2000-12-12 | Anelva Corp | プラズマｃｖｄ装置 |
| JP3836636B2 (ja) | 1999-07-27 | 2006-10-25 | 独立行政法人科学技術振興機構 | プラズマ発生装置 |
| JP3374796B2 (ja) * | 1999-08-06 | 2003-02-10 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| ES2336303T3 (es) | 2000-05-17 | 2010-04-12 | Ihi Corporation | Aparato y procedimiento de cvd por plasma. |
| JP3586198B2 (ja) | 2001-01-19 | 2004-11-10 | 株式会社東芝 | プラズマ生成装置及びプラズマ処理方法 |
| JP4770029B2 (ja) | 2001-01-22 | 2011-09-07 | 株式会社Ｉｈｉ | プラズマｃｖｄ装置及び太陽電池の製造方法 |
| TWI241868B (en) * | 2002-02-06 | 2005-10-11 | Matsushita Electric Ind Co Ltd | Plasma processing method and apparatus |
| US6783629B2 (en) * | 2002-03-11 | 2004-08-31 | Yuri Glukhoy | Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment |
| JP3751909B2 (ja) * | 2002-07-01 | 2006-03-08 | 独立行政法人科学技術振興機構 | プラズマ装置及びプラズマ処理基体 |
| TWI391035B (zh) * | 2002-12-16 | 2013-03-21 | Japan Science & Tech Agency | Plasma generation device, plasma control method and substrate manufacturing method (1) |
| KR100523851B1 (ko) * | 2003-05-07 | 2005-10-27 | 학교법인 성균관대학 | 대면적처리용 내장형 선형안테나를 구비하는 유도결합플라즈마 처리장치 |
| CN100587104C (zh) | 2004-03-26 | 2010-02-03 | 日新电机株式会社 | 硅膜形成装置 |
| WO2005093798A1 (ja) | 2004-03-26 | 2005-10-06 | Nissin Electric Co., Ltd. | シリコンドット形成方法及びシリコンドット形成装置 |
| CN100468630C (zh) | 2004-03-26 | 2009-03-11 | 日新电机株式会社 | 结晶性硅薄膜的形成方法及装置 |
-
2005
- 2005-03-22 WO PCT/JP2005/005664 patent/WO2005094140A1/ja not_active Application Discontinuation
- 2005-03-22 CN CN2005800094402A patent/CN1934913B/zh not_active Expired - Fee Related
- 2005-03-22 JP JP2006519455A patent/JP4671361B2/ja not_active Expired - Fee Related
- 2005-03-22 EP EP05721591A patent/EP1729551A4/en not_active Withdrawn
- 2005-03-22 KR KR1020067019601A patent/KR100858102B1/ko not_active IP Right Cessation
- 2005-03-24 TW TW094109152A patent/TW200537992A/zh unknown
-
2006
- 2006-09-12 US US11/519,133 patent/US7849814B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1349004A (zh) * | 2000-09-27 | 2002-05-15 | 上海维安新材料研究中心有限公司 | 一种纳米硅薄膜的制备工艺和产品 |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2000-345351A 2000.12.12 |
| JP特开2004-39719A 2004.02.05 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005094140A1 (ja) | 2005-10-06 |
| CN1934913A (zh) | 2007-03-21 |
| EP1729551A1 (en) | 2006-12-06 |
| TW200537992A (en) | 2005-11-16 |
| KR20060120283A (ko) | 2006-11-24 |
| US7849814B2 (en) | 2010-12-14 |
| JPWO2005094140A1 (ja) | 2007-08-16 |
| JP4671361B2 (ja) | 2011-04-13 |
| US20070266947A1 (en) | 2007-11-22 |
| KR100858102B1 (ko) | 2008-09-10 |
| EP1729551A4 (en) | 2009-08-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101229 Termination date: 20160322 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |