JP5754579B2 - イオン源 - Google Patents
イオン源 Download PDFInfo
- Publication number
- JP5754579B2 JP5754579B2 JP2010177459A JP2010177459A JP5754579B2 JP 5754579 B2 JP5754579 B2 JP 5754579B2 JP 2010177459 A JP2010177459 A JP 2010177459A JP 2010177459 A JP2010177459 A JP 2010177459A JP 5754579 B2 JP5754579 B2 JP 5754579B2
- Authority
- JP
- Japan
- Prior art keywords
- container
- dielectric
- conductor
- opening
- dielectric container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000002500 ions Chemical class 0.000 claims description 66
- 239000004020 conductor Substances 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims description 15
- 238000009616 inductively coupled plasma Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 description 12
- 238000009826 distribution Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- -1 F 8 Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- YUCFVHQCAFKDQG-UHFFFAOYSA-N fluoromethane Chemical compound F[CH] YUCFVHQCAFKDQG-UHFFFAOYSA-N 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
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- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Description
11:誘電体容器
12:金属チャンバー
13:引き出し電極
14:真空容器
15:高周波電源
16:誘電体
17:供給管
18:排気管
100:導体
101:誘電体
Claims (1)
- 真空容器と、
前記真空容器内に配置され、上部に開口した第1開口部と下部に開口した第2開口部とを有し、前記第1開口部が前記真空容器の内壁に接続され、円筒状の金属容器とこの円筒状の金属容器の内壁に被覆された誘電体とから成り、内部において誘導結合プラズマを生成する誘電体容器と、
前記真空容器内でかつ前記誘電体容器の外部の前記第2開口部の側に設けられた被処理体を配置するステージに対面し、前記誘電体容器の前記第2開口部に配置され、前記ステージに向けてイオンを加速する引き出し電極と、
前記誘電体容器内に配置され、前記誘電体容器の内壁面に沿って周回せずに湾曲された線状の導体と前記導体を被膜する誘電体とからなり、前記導体の両端が前記第1開口部を介して前記真空容器の内壁に接続された低インダクタンス内部アンテナと、
前記真空容器の外部において、前記低インダクタンス内部アンテナの前記導体の前記両端に接続する高周波電源と、
所望のイオンを発生させるための金属に対する腐食性の高いガスを、前記誘電体容器の前記第1開口部から該誘電体容器の内部に供給する供給管と、
前記真空容器内部を排気する排気管と、
を有し、
前記低インダクタンス内部アンテナの導体の長さを前記誘電体容器の内周の1/2以下であって前記誘電体容器内において生成される前記誘導結合プラズマのデバイ長以上とする、
ことを特徴とするイオン源。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010177459A JP5754579B2 (ja) | 2010-08-06 | 2010-08-06 | イオン源 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010177459A JP5754579B2 (ja) | 2010-08-06 | 2010-08-06 | イオン源 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012038568A JP2012038568A (ja) | 2012-02-23 |
JP5754579B2 true JP5754579B2 (ja) | 2015-07-29 |
Family
ID=45850360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010177459A Active JP5754579B2 (ja) | 2010-08-06 | 2010-08-06 | イオン源 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5754579B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7488555B2 (ja) * | 2019-07-18 | 2024-05-22 | 株式会社Iipt | イオンガン及びイオンビームスパッタリング装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0917367A (ja) * | 1995-06-27 | 1997-01-17 | Nissin Electric Co Ltd | イオン源装置 |
KR100858102B1 (ko) * | 2004-03-26 | 2008-09-10 | 닛신덴키 가부시키 가이샤 | 플라즈마발생장치 |
JP4998972B2 (ja) * | 2005-08-16 | 2012-08-15 | 株式会社アルバック | イオン注入装置およびイオン注入方法 |
JP2007149638A (ja) * | 2005-10-27 | 2007-06-14 | Nissin Electric Co Ltd | プラズマ生成方法及び装置並びにプラズマ処理装置 |
-
2010
- 2010-08-06 JP JP2010177459A patent/JP5754579B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012038568A (ja) | 2012-02-23 |
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